NXP 2N7002BKV Schematic [ru]
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
Rev. 2 — 22 September 2010 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small
SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
V
GS
I
D
R
DSon
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
drain-source voltage T
gate-source voltage T
drain current T
drain-source on-state
resistance
=25°C--60V
amb
=25°C--±20 V
amb
=25°C;
amb
=10V
V
GS
Tj=25°C;
=10V;
V
GS
I
= 500 mA
D
[1]
--340mA
-11.6Ω
NXP Semiconductors
5
2. Pinning information
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1S1source1
2 G1 gate 1
3D2drain2
4S2source2
5 G2 gate 2
6D1drain1
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
456
6
5
123
1
2
3. Ordering information
Table 3. Ordering information
Type number Package
2N7002BKV - plastic surface-mounted package; 6 leads SOT666
4. Marking
Table 4. Marking codes
Type number Marking code
2N7002BKV ZG
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
DS
V
GS
I
D
I
DM
drain-source voltage T
gate-source voltage T
drain current VGS=10V
peak drain current T
3
017aaa05
Name Description Version
=25°C-60V
amb
=25°C-±20 V
amb
[1]
T
=25°C-340mA
amb
=100°C-240mA
T
amb
=25°C;
amb
single pulse; t
≤ 10 μs
p
-1.2A
4
2N7002BKV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 22 September 2010 2 of 16
NXP Semiconductors
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
tot
total power dissipation T
=25°C
amb
=25°C - 1140 mW
T
sp
[2]
-350mW
[1]
-410mW
Source-drain diode
I
S
source current T
amb
=25°C
[1]
-340mA
ESD maximum rating
V
ESD
electrostatic discharge
human body model
[3]
- 2000 V
voltage
Per device
P
tot
T
j
T
amb
T
stg
total power dissipation T
junction temperature 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C
amb
=25°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Measured between all pins.
[2]
-525mW
120
P
der
(%)
80
40
0
−75 17512525 75−25
P
tot
der
----------------------- -
P
tot 25°C()
P
100 %×= I
017aaa001
T
(°C)
amb
Fig 1. Normalized total power dissipation as a
function of ambient temperature
120
I
der
(%)
80
40
0
−75 17512525 75−25
der
I
D
------------------- -
I
D25° C()
100 %×=
017aaa002
T
(°C)
amb
Fig 2. Normalized continuous drain current as a
function of ambient temperature
2N7002BKV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 22 September 2010 3 of 16
NXP Semiconductors
017aaa059
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
10
I
D
(A)
1
−1
10
−2
10
−3
10
−1
10
I
= single pulse
DM
= 100 μs
(1) t
p
=1ms
(2) t
p
=10ms
(3) t
p
(4) DC; T
(5) t
(6) DC; T
sp
= 100 ms
p
amb
=25°C
=25°C; drain mounting pad 1 cm
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
Limit R
DSon
2
= VDS/I
D
101
VDS (V)
(1)
(2)
(3)
(4)
(5)
(6)
2
10
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
in free air
in free air
[1]
- 315 360 K/W
[2]
- 265 305 K/W
--110K/W
[1]
- - 240 K/W
2
.
2N7002BKV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 22 September 2010 4 of 16
NXP Semiconductors
017aaa060
3
10
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
th(j-a)
10
2
10
1
−3
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.05
0.1
0.02
0
0.01
0.2
−2
−1
10
10110
2
10
tp (s)
3
10
Z
(K/W)
FR4 PCB, standard footprint
Fig 4. Transi en t the rmal impe da nce from junction to ambient as a function of pulse duration; typical values
017aaa061
Z
th(j-a)
(K/W)
3
10
2
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.1
0.2
0.05
0
10
1
−3
10
FR4 PCB, mounting pad for drain 1 cm
0.02
0.01
−2
−1
10
2
10110
2
10
tp (s)
3
10
Fig 5. Transi en t the rmal impe da nce from junction to ambient as a function of pulse duration; typical values
2N7002BKV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 22 September 2010 5 of 16
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