NXP 2N7002BKT Schematic [ru]
2N7002BKT
60 V, 290 mA N-channel Trench MOSFET
Rev. 1 — 15 June 2010 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
V
GS
I
D
R
DSon
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
drain-source voltage T
gate-source voltage T
drain current T
drain-source on-state
resistance
=25°C--60V
amb
=25°C--±20 V
amb
=25°C;
amb
VGS=10V
Tj=25°C;
=10V;
V
GS
= 500 mA
I
D
[1]
--290mA
-11.6Ω
NXP Semiconductors
0
2. Pinning information
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2S source
3 D drain
3. Ordering information
Table 3. Ordering information
Type number Package
2N7002BKT SC-75 plastic surface-mounted package; 3 leads SOT416
2N7002BKT
60 V, 290 mA N-channel Trenc h MOSFET
3
12
G
Name Description Version
D
S
017aaa00
4. Marking
Table 4. Marking codes
Type number Marking code
2N7002BKT Z3
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
GS
I
D
I
DM
drain-source voltage T
gate-source voltage T
=25°C-60V
amb
=25°C-±20 V
amb
drain current VGS=10V
T
=25°C-290mA
amb
=100°C-200mA
T
amb
peak drain current T
amb
=25°C;
single pulse; t
≤ 10 μs
p
[1]
-1.2A
2N7002BKT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 15 June 2010 2 of 16
NXP Semiconductors
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
tot
T
j
T
amb
T
stg
Source-drain diode
I
S
ESD maximum rating
V
ESD
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
[3] Measured between all pins.
2N7002BKT
60 V, 290 mA N-channel Trenc h MOSFET
total power dissipation T
=25°C
amb
=25°C-820mW
T
sp
junction temperature 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C
source current T
electrostatic discharge
=25°C
amb
human body model
voltage
footprint.
[2]
-260mW
[1]
-320mW
[1]
-290mA
[3]
- 2000 V
120
P
der
(%)
80
40
0
−75 17512525 75−25
P
tot
der
----------------------- -
P
tot 25°C()
P
100 %×= I
017aaa001
T
(°C)
amb
Fig 1. Normalized total power dissipation as a
function of ambient temperature
120
I
der
(%)
80
40
0
−75 17512525 75−25
der
I
D
------------------- -
I
D25° C()
100 %×=
017aaa002
T
(°C)
amb
Fig 2. Normalized continuous drain current as a
function of ambient temperature
2N7002BKT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 15 June 2010 3 of 16
NXP Semiconductors
017aaa049
2N7002BKT
60 V, 290 mA N-channel Trenc h MOSFET
10
I
D
(A)
1
−1
10
−2
10
−3
10
−1
10
= single pulse
I
DM
= 100 μs
(1) t
p
=1ms
(2) t
p
=10ms
(3) t
p
(4) DC; T
(5) t
(6) DC; T
sp
= 100 ms
p
amb
=25°C
=25°C; drain mounting pad 1 cm
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
Limit R
DSon
2
= VDS/I
D
101
VDS (V)
(1)
(2)
(3)
(4)
(5)
(6)
2
10
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
R
th(j-sp)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
in free air
[1]
- 420 480 K/W
[2]
- 340 395 K/W
- - 150 K/W
2
.
2N7002BKT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 15 June 2010 4 of 16
NXP Semiconductors
017aaa050
2N7002BKT
60 V, 290 mA N-channel Trenc h MOSFET
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
2
10
10
1
−3
10
FR4 PCB, standard footprint
Fig 4. Transi en t the rmal impe da nce from junction to ambient as a function of pulse duration; typical values
0.5
0.25
0.1
0
0.75
0.33
0.2
0.05
0.02
0.01
−2
−1
10
10110
2
10
tp (s)
10
3
tp (s)
017aaa051
3
10
3
10
th(j-a)
10
2
10
1
−3
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.1
0.05
0.02
0.01
0
0.2
−2
Z
(K/W)
FR4 PCB, mounting pad for drain 1 cm
−1
10
2
10110
2
10
Fig 5. Transi en t the rmal impe da nce from junction to ambient as a function of pulse duration; typical values
2N7002BKT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 15 June 2010 5 of 16
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