NXP 2N7002BKMB Schematics

SOT883B

2N7002BKMB

60 V, single N-channel Trench MOSFET

Rev. 2 — 13 June 2012 Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.

1.2 Features and benefits

 Very fast switching
 Trench MOSFET technology
 ESD protection up to 2 kV

 Logic-level compatible
 Ultra thin package profile with 0.37

mm height

1.3 Applications

 Relay driver
 High-speed line driver

 Low-side loadswitch
 Switching circuits

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

DS

V

GS

I

D

Static characteristics

R

DSon

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.

drain-source voltage Tj=25°C --60V
gate-source voltage -20 - 20 V
drain current VGS=10V; T

drain-source on-state
resistance

=25°C

amb

VGS=10V; ID=450mA; Tj=25°C - 1 1.6 Ω

[1]

- - 450 mA

NXP Semiconductors

3

1

2

Transparent

top view

017aaa255

G

D

S

MARKING CODE

(EXAMPLE)

PIN 1 INDICATION

READING DIRECTION

READING DIRECTION

READING EXAMPLE:

0111
1011

006aac673

2. Pinning information

2N7002BKMB

60 V, single N-channel Trench MOSFET

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate
2Ssource
3 D drain

SOT883B (DFN1006B-3)

3. Ordering information

Table 3. Ordering information

Type number Package

2N7002BKMB DFN1006B-3 Leadless ultra small plastic package; 3 solder lands;

Name Description Version

body 1.0 x 0.6 x 0.37 mm

4. Marking

SOT883B

Table 4. Marking codes

Type number Marking code

2N7002BKMB 0000 0001

Fig 1. DFN1006B-3 (SOT883B) binary marking code description

2N7002BKMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

Product data sheet Rev. 2 — 13 June 2012 2 of 15

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5. Limiting values

2N7002BKMB

60 V, single N-channel Trench MOSFET

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

I

DM

P

tot

T

j

T

amb

T

stg

Source-drain diode

I

S

ESD maximum rating

V

ESD

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.

drain-source voltage Tj=25°C - 60 V
gate-source voltage -20 20 V
drain current VGS=10V; T

=10V; T

V

GS

peak drain current T
total power dissipation T

= 25 °C; single pulse; tp≤ 10 µs - 1.8 A

amb

=25°C

amb

= 25 °C - 2700 mW

T

sp

amb
amb

=25°C
= 100 °C

[1]
[1]

[2]
[1]

- 450 mA

- 220 mA

- 360 mW

- 715 mW

junction temperature -55 150 °C
ambient temperature -55 150 °C
storage temperature -65 150 °C

source current T

amb

electrostatic discharge voltage HBM

=25°C

[1]

[3]

- 450 mA

- 2000 V

120

P

der

(%)

80

40

0

-75 17512525 75-25

Fig 2. Normalized total power dissipation as a

function of junction temperature

2N7002BKMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

Product data sheet Rev. 2 — 13 June 2012 3 of 15

001aao121

Tj (°C)

120

I

der

(%)

80

40

0

-75 17512525 75-25

Fig 3. Normalized continuous drain current as a

function of junction temperature

001aao122

Tj (°C)

NXP Semiconductors

aaa-002590

10

I

D

(A)

10

-2

VDS (V)

10

-1

10

2

101

1

10

-1

limit R

DSon

= VDS / I

D

(1)

(4)

(5)

(3)

(2)

2N7002BKMB

60 V, single N-channel Trench MOSFET

IDM is single pulse
(1) tp = 1 ms
(2) DC; T
(3) t
(4) tp = 100 ms
(5) DC; T

Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source

voltage

sp

= 10 ms

p

amb

= 25 °C

= 25 °C; drain mounting pad 1 cm

2

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

thermal resistance
from junction to
ambient

R

th(j-sp)

thermal resistance
from junction to solder
point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm

in free air

[1]
[2]

- 305 350 K/W

- 150 175 K/W

--40K/W

2

.

2N7002BKMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

Product data sheet Rev. 2 — 13 June 2012 4 of 15

NXP Semiconductors

017aaa109

tp (s)

10

−3

10

2

10

3

10110

−2

10

−1

10

2

10

3

Z

th(j-a)

(K/W)

10

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.05

0.02

0.01

0

0.1

017aaa110

tp (s)

10

−3

10

2

10

3

10110

−2

10

−1

10

2

10

3

Z

th(j-a)

(K/W)

10

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0

0.1

0.02

0.01

0.05

2N7002BKMB

60 V, single N-channel Trench MOSFET

FR4 PCB, standard footprint

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for drain 1 cm

2

Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

2N7002BKMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

Product data sheet Rev. 2 — 13 June 2012 5 of 15