NXP 2N7002BK Schematic [ru]
2N7002BK
60 V, 350 mA N-channel Trench MOSFET
Rev. 1 — 17 June 2010 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
V
GS
I
D
R
DSon
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
drain-source voltage T
gate-source voltage T
drain current T
drain-source on-state
resistance
=25°C--60V
amb
=25°C--±20 V
amb
=25°C;
amb
=10V
V
GS
Tj=25°C;
=10V;
V
GS
I
= 500 mA
D
[1]
--350mA
-11.6Ω
NXP Semiconductors
0
2. Pinning information
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2S source
3 D drain
3. Ordering information
Table 3. Ordering information
Type number Package
2N7002BK TO-236AB plastic surface-mounted package; 3 leads SOT23
2N7002BK
60 V, 350 mA N-channel Trench MOSFET
3
12
G
Name Description Version
D
S
017aaa00
4. Marking
Table 4. Marking codes
Type number Marking code
2N7002BK LN*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
GS
I
D
I
DM
drain-source voltage T
gate-source voltage T
=25°C-60V
amb
=25°C-±20 V
amb
drain current VGS=10V
T
=25°C-350mA
amb
=100°C-245mA
T
amb
peak drain current T
amb
=25°C;
single pulse; t
≤ 10 μs
p
[1]
[1]
-1.2A
2N7002BK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 17 June 2010 2 of 16
NXP Semiconductors
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
tot
T
j
T
amb
T
stg
Source-drain diode
I
S
ESD maximum rating
V
ESD
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
[3] Measured between all pins.
2N7002BK
60 V, 350 mA N-channel Trench MOSFET
total power dissipation T
=25°C
amb
=25°C-1.2W
T
sp
junction temperature 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C
source current T
electrostatic discharge
=25°C
amb
human body model
voltage
footprint.
[2]
-370mW
[1]
-440mW
[1]
-350mA
[3]
- 2000 V
120
P
der
(%)
80
40
0
−75 17512525 75−25
P
tot
der
----------------------- -
P
tot 25°C()
P
100 %×= I
017aaa001
T
(°C)
amb
Fig 1. Normalized total power dissipation as a
function of ambient temperature
120
I
der
(%)
80
40
0
−75 17512525 75−25
der
I
D
------------------- -
I
D25° C()
100 %×=
017aaa002
T
(°C)
amb
Fig 2. Normalized continuous drain current as a
function of ambient temperature
2N7002BK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 17 June 2010 3 of 16
NXP Semiconductors
017aaa036
10
I
D
(A)
1
−1
10
Limit R
DSon
= VDS/I
2N7002BK
60 V, 350 mA N-channel Trench MOSFET
D
(1)
(2)
(3)
(4)
−2
10
−3
10
−1
10
I
DM
= 100 μs
(1) t
p
=1ms
(2) t
p
=10ms
(3) t
p
= 100 ms
(4) t
p
(5) DC; T
(6) DC; T
= single pulse
=25°C
sp
=25°C; drain mounting pad 1 c m
amb
2
101
VDS (V)
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
R
th(j-sp)
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
in free air
[1]
- 295 340 K/W
[2]
- 250 285 K/W
- - 105 K/W
(5)
(6)
2
10
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2N7002BK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
.
Product data sheet Rev. 1 — 17 June 2010 4 of 16
NXP Semiconductors
017aaa037
3
10
2N7002BK
60 V, 350 mA N-channel Trench MOSFET
th(j-a)
10
2
10
1
−3
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.1
0.05
0.02
0.01
0
0.2
−2
−1
10
10110
2
10
tp (s)
3
10
Z
(K/W)
FR4 PCB, standard footprint
Fig 4. Transi en t the rmal impe da nce from junction to ambient as a function of pulse duration; typical values
017aaa038
Z
th(j-a)
(K/W)
3
10
2
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.1
0.05
0.2
0.02
0
10
1
−3
10
FR4 PCB, mounting pad for drain 1 cm
0.01
−2
−1
10
2
10110
2
10
tp (s)
3
10
Fig 5. Transi en t the rmal impe da nce from junction to ambient as a function of pulse duration; typical values
2N7002BK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 17 June 2010 5 of 16
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