NXP 2N7002 Schematic [ru]

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SOT23

mbb076

2N7002

60 V, 300 mA N-channel Trench MOSFET

Rev. 7 — 8 September 2011 Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.

1.2 Features and benefits

 Suitable for logic level gate drive

sources

 Surface-mounted package  Trench MOSFET technology

 Very fast switching

1.3 Applications

 Logic level translators  High-speed line drivers

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

tot

Static characteristics

DSon

drain-source voltage 25 °C ≤ Tj≤ 150°C --60V drain current VGS=10V; Tsp=25°C; see Figure 1;

total power dissipation Tsp=25°C; see Figure 2 --0.83W

drain-source on-state resistance

- - 300 mA

see Figure 3

VGS=10V; ID=500mA; Tj=25°C; see Figure 6; see Figure 8

-2.85Ω

2. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate 2Ssource 3 D drain

SOT23 (TO-236AB)

NXP Semiconductors

3. Ordering information

2N7002

60 V, 300 mA N-channel Trench MOSFET

Table 3. Ordering information

Type number Package

Name Description Version

2N7002 TO-236AB plastic surface-mounted package; 3 leads SOT23

4. Marking

Table 4. Marking codes

Type number Marking code

2N7002 12%

[1] % = placeholder for manufacturing site code

[1]

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

DGR

GSM

tot

stg

Source-drain diode

drain-source voltage 25 °C ≤ Tj≤ 150 °C - 60 V drain-gate voltage 25 °C ≤ Tj≤ 150 °C; RGS=20kΩ -60V gate-source voltage -30 30 V peak gate-source voltage pulsed; tp≤ 50 µs; δ = 0.25 -40 40 V drain current VGS=10V; Tsp=25°C; see Figure 1;

peak drain current pulsed; tp≤ 10 µs; Tsp=25°C; see

total power dissipation Tsp=25°C; see Figure 2 -0.83W junction temperature -65 150 °C storage temperature -65 150 °C

source current Tsp= 25 °C - 300 mA peak source current pulsed; tp≤ 10 µs; Tsp=25°C - 1.2 A

- 300 mA

see Figure 3

=10V; Tsp= 100 °C; see Figure 1 - 190 mA

-1.2A

Figure 3

Product data sheet Rev. 7 — 8 September 2011 2 of 13

NXP Semiconductors

Tsp (°C)

0 20015050 100

03aa25

120

der

(%)

Tsp (°C)

0 20015050 100

03aa17

120

der

(%)

003aab350

-2

-1

1 10 10

VDS (V)

(A)

1 ms

100 µs

Limit R

DSon

= V

/ I

10 ms 100 ms

10 µs

tp =

2N7002

60 V, 300 mA N-channel Trench MOSFET

Fig 1. Normalized continuous drain current as a

function of solder point temperature

Fig 2. Normalized total power dissipation as a

function of solder point temperature

Fig 3. Safe operating area; continous and peak drain currents as a function of drain-source voltage

Product data sheet Rev. 7 — 8 September 2011 3 of 13

NXP Semiconductors

003aab351

-5

-4

-3

-2

-1

1 10

(s)

th(j-sp)

(K/W)

single pul se

0.2

0.1

0.05

δ =

0.5

0.02

δ =

6. Thermal characteristics

2N7002

60 V, 300 mA N-channel Trench MOSFET

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-a)

thermal resistance from junction to

Mounted on a printed-circuit board;

minimum footprint ; vertical in still air

- - 350 K/W

ambient

th(j-sp)

thermal resistance

see Figure 4 - - 150 K/W from junction to solder point

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

Product data sheet Rev. 7 — 8 September 2011 4 of 13

NXP Semiconductors

7. Characteristics

2N7002

60 V, 300 mA N-channel Trench MOSFET

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

(BR)DSS

GSth

drain-source breakdown voltage

gate-source threshold voltage

ID=10µA; VGS=0V; Tj=25°C 60--V

=10µA; VGS=0V; Tj= -55 °C 55 - - V

ID=0.25mA; VDS=VGS; Tj=25°C;

122.5V

see Figure 9; see Figure 10

=0.25mA; VDS=VGS; Tj=150°C;

see Figure 9

=0.25mA; VDS=VGS; Tj=-55°C;

; see Figure 10

0.6--V

--2.75V

see Figure 9; see Figure 10

DSS

GSS

DSon

drain leakage current VDS=48V; VGS=0V; Tj= 25 °C - 0.01 1 µA

=48V; VGS=0V; Tj=150°C --10µA

gate leakage current VGS=15V; VDS=0V; Tj= 25 °C - 10 100 nA

=-15V; VDS=0V; Tj= 25 °C - 10 100 nA

drain-source on-state resistance

VGS=10V; ID=500mA; Tj=25°C;

see Figure 6; see Figure 8

=10V; ID=500mA; Tj= 150 °C;

see Figure 6

=4.5V; ID=75mA; Tj=25°C; see

; see Figure 8

-2.85Ω

--9.25Ω

-3.85.3Ω

Figure 6; see Figure 8

Dynamic characteristi cs

iss

oss

rss

input capacitance VDS=10V; f=1MHz; VGS=0V;

=25°C

output capacitance - 6.8 30 pF

reverse transfer

- 3150pF

- 3.5 10 pF

capacitance

off

turn-on time VGS=10V; VDS=50V; RL= 250 Ω;

=50Ω; RGS=50Ω

turn-off time - 11 15 ns

G(ext)

- 2.5 10 ns

Source-drain diode

source-drain voltage IS=300mA; VGS=0V; Tj=25°C; see

- 0.85 1.5 V

Figure 11

recovered charge VGS=0V; IS= 300 mA;

/dt = -100 A/µs

reverse recovery time - 30 - ns

-30-nC

Product data sheet Rev. 7 — 8 September 2011 5 of 13

NXP Semiconductors

003aab352

0.2

0.4

0.6

0.8

01234

(V)

(A)

4.5

3.5VGS (V) =

003aab353

2000

4000

6000

8000

10000

0 0.2 0.4 0.6 0.8 1

(A)

DSon

(mΩ)

4.5

VGS (V) =

003aab354

0.2

0.4

0.6

0.8

0246

(V)

(A)

Tj = 150 °C

25 °C

Tj (°C)

−60 180120060

03aa28

1.2

0.6

1.8

2.4

2N7002

60 V, 300 mA N-channel Trench MOSFET

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 7. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 6. Drain-source on-state resistance as a function

of drain current; typical values

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature

Product data sheet Rev. 7 — 8 September 2011 6 of 13

NXP Semiconductors

003aab101

-60 0 60 120 180 T

(°C)

GS(th)

(V)

min

typ

max

003aab100

-6

-5

-4

-3

0123

(V)

(A)

min typ max

003aab356

0.2

0.4

0.6

0.8

0.2 0.4 0.6 0.8 1 V

(V)

(A)

Tj = 25 °C

150 °C

003aab357

-1

1 10 10

VDS (V)

(pF)

iss

rss

oss

2N7002

60 V, 300 mA N-channel Trench MOSFET

Fig 9. Gate-source threshold voltage as a function of

junction temperature

Fig 11. Source current as a function of source-drain

voltage; typical values

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical values

Product data sheet Rev. 7 — 8 September 2011 7 of 13

NXP Semiconductors

UNIT

max.

Qwv

REFERENCES

OUTLINE VERSION

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04 06-03-16

IEC JEDEC JEITA

0.1

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

0.95

1.9

2.5

2.1

0.55

0.45

0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

w M

v M

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT23

60 V, 300 mA N-channel Trench MOSFET

8. Package outline

2N7002

Fig 13. Package outline SOT23 (TO-236AB)

Product data sheet Rev. 7 — 8 September 2011 8 of 13

NXP Semiconductors

solder lands

solder resist

occupied area

solder paste

sot023_fr

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_fw

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

9. Soldering

2N7002

60 V, 300 mA N-channel Trench MOSFET

Fig 14. Reflow soldering footprint for SOT23 (TO-236AB)

Fig 15. Wave soldering footprint for SOT23 (TO-236AB)

Product data sheet Rev. 7 — 8 September 2011 9 of 13

NXP Semiconductors

10. Revision history

2N7002

60 V, 300 mA N-channel Trench MOSFET

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

2N7002 v.7 20110908 Product data sheet - 2N7002 v.6 Modifications:

• The format of this data sheet has been redesigned to comply with the new identity guidelines

of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

2N7002 v.6 20060428 Product data sheet 2N7002 v.5 2N7002 v.5 200511 15 Product data sheet 2N7002 v.4 2N7002 v.4 20050426 Product data sheet 2N7002 v.3 2N7002 v.3 20000727 Product specification HZG336 2N7002 v.2 2N7002 v.2 19970617 Product specification 2N7002 v.1 2N7002 v.1 19901031 Product specification - -

Product data sheet Rev. 7 — 8 September 2011 10 of 13

NXP Semiconductors

2N7002

60 V, 300 mA N-channel Trench MOSFET

11. Legal information

11.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The p r oduct status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

[1] [2]

Product status

[3]

Definition

11.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specificatio n — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

11.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including withou t limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied pri or to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Product data sheet Rev. 7 — 8 September 2011 11 of 13

NXP Semiconductors

2N7002

60 V, 300 mA N-channel Trench MOSFET

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpret ed or construed as an offer to sell products that is open f or accept ance or the grant , conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It i s neit her qua lif ied nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.

, unless otherwise

12. Contact information

For more information, please visit: http://www.nxp.com

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and st andards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, da mages or failed produ ct claims result ing from custome r design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

11.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trademarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

For sales office addresses, please send an email to: salesaddresses@nxp.com

Product data sheet Rev. 7 — 8 September 2011 12 of 13

NXP Semiconductors

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8

9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .11

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

12 Contact information. . . . . . . . . . . . . . . . . . . . . .12

2N7002

60 V, 300 mA N-channel Trench MOSFET

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 8 September 2011

Document identifier: 2N7002

NXP 2N7002 Schematic [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual

1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

6. Thermal characteristics

7. Characteristics

8. Package outline

9. Soldering

10. Revision history

11. Legal information

11.1 Data sheet status

11.2 Definitions

11.3 Disclaimers

12. Contact information

11.4 Trademarks

13. Contents