NXP 2N7002 Schematic [ru]
SOT23
12
3
S
D
G
mbb076
2N7002
60 V, 300 mA N-channel Trench MOSFET
Rev. 7 — 8 September 2011 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Suitable for logic level gate drive
sources
Surface-mounted package
Trench MOSFET technology
Very fast switching
1.3 Applications
Logic level translators High-speed line drivers
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
I
D
P
tot
Static characteristics
R
DSon
drain-source voltage 25 °C ≤ Tj≤ 150°C --60V
drain current VGS=10V; Tsp=25°C; see Figure 1;
total power dissipation Tsp=25°C; see Figure 2 --0.83W
drain-source on-state
resistance
- - 300 mA
see Figure 3
VGS=10V; ID=500mA; Tj=25°C;
see Figure 6; see Figure 8
-2.85Ω
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2Ssource
3 D drain
SOT23 (TO-236AB)
NXP Semiconductors
3. Ordering information
2N7002
60 V, 300 mA N-channel Trench MOSFET
Table 3. Ordering information
Type number Package
Name Description Version
2N7002 TO-236AB plastic surface-mounted package; 3 leads SOT23
4. Marking
Table 4. Marking codes
Type number Marking code
2N7002 12%
[1] % = placeholder for manufacturing site code
[1]
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
DGR
V
GS
V
GSM
I
D
I
DM
P
tot
T
j
T
stg
Source-drain diode
I
S
I
SM
drain-source voltage 25 °C ≤ Tj≤ 150 °C - 60 V
drain-gate voltage 25 °C ≤ Tj≤ 150 °C; RGS=20kΩ -60V
gate-source voltage -30 30 V
peak gate-source voltage pulsed; tp≤ 50 µs; δ = 0.25 -40 40 V
drain current VGS=10V; Tsp=25°C; see Figure 1;
peak drain current pulsed; tp≤ 10 µs; Tsp=25°C; see
total power dissipation Tsp=25°C; see Figure 2 -0.83W
junction temperature -65 150 °C
storage temperature -65 150 °C
source current Tsp= 25 °C - 300 mA
peak source current pulsed; tp≤ 10 µs; Tsp=25°C - 1.2 A
- 300 mA
see Figure 3
=10V; Tsp= 100 °C; see Figure 1 - 190 mA
V
GS
-1.2A
Figure 3
2N7002 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 8 September 2011 2 of 13
NXP Semiconductors
Tsp (°C)
0 20015050 100
03aa25
40
80
120
I
der
(%)
0
Tsp (°C)
0 20015050 100
03aa17
40
80
120
P
der
(%)
0
003aab350
10
-2
10
-1
1
10
1 10 10
2
VDS (V)
I
D
(A)
DC
1 ms
100 µs
Limit R
DSon
= V
DS
/ I
D
10 ms
100 ms
10 µs
tp =
2N7002
60 V, 300 mA N-channel Trench MOSFET
Fig 1. Normalized continuous drain current as a
function of solder point temperature
Fig 2. Normalized total power dissipation as a
function of solder point temperature
Fig 3. Safe operating area; continous and peak drain currents as a function of drain-source voltage
2N7002 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 8 September 2011 3 of 13
NXP Semiconductors
003aab351
1
10
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
1 10
t
p
(s)
Z
th(j-sp)
(K/W)
single pul se
0.2
0.1
0.05
δ =
0.5
0.02
t
p
T
P
t
t
p
T
δ =
6. Thermal characteristics
2N7002
60 V, 300 mA N-channel Trench MOSFET
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance
from junction to
Mounted on a printed-circuit board;
minimum footprint ; vertical in still air
- - 350 K/W
ambient
R
th(j-sp)
thermal resistance
see Figure 4 - - 150 K/W
from junction to solder
point
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
2N7002 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 8 September 2011 4 of 13
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