NTE NTE5610, NTE5609, NTE5608 Datasheet

NTE5608 thru NTE5610

TRIAC
8 Amp

Description:

The NTE5608 through NTE5610 series of TRIACs are high performance glass passivated PNPN
devices i n a TO220 t ype package designed for g ener al purpose a ppl icati ons where moderate gate
sensitivity is required.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Repetitive Peak Off–State Voltage (TJ = –40° to +125°C, RGK = 1kΩ), V

NTE5608 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5609 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5610 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

On–State Current (All Conduction Angles, TC = +85°C), I
Non–Repetitive On–State Current (Half Cycle), I

TSM

T(RMS)

60Hz 77A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50Hz 70A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Fusing Current (t = 10ms), I2t 24A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Gate Current (t = 10µs Max), I
Peak Gate Dissipation (t = 10µs Max), P
Gate Dissipation (t = 20ms Max), P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R

GM

GM

G(AV)

J

stg

thJC

thJA

Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T

DRM

L

8A. . . . . . . . . . . . . . . . . . . . . . . . . . .

4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+250°C. . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Off–State Leakage Current I

On–State Voltage V
On–State Threshold Voltage V
On–State Slope Resistance r

DRM

T(TO)

VD = V
VD = V
IT = 12A, TJ = +25°C – – 1.85 V

T

TJ = +125°C – – 1 V
TJ = +125°C – – 80 mΩ

T

, RGK = 1kΩ, TJ = +25°C – – 5 µA

DRM

, RGK = 1kΩ, TJ = +125°C – – 2 mA

DRM

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Gate Trigger Current I
Gate Trigger Voltage V

GT

GT

Holding Current I
Critical Rate–of–Rise dv/dt VD = 0.67 x V

VD = 12V, Note 1 – – 10 mA
VD = 12V, All Quadrants – – 2.5 V
RGK = 1kΩ – – 10 mA

H

, RGK = 1kΩ, TJ = +1 25°C 50 – – V/µs

DRM

Critical Rate–of–Rise, Off–State dv/dtcIT = 8A, di/dt = 3.55A/ms, TC = +85°C 2 – – V/µs

Note 1. For either polarity of gate voltage with reference to electrode MT1.

.420 (10.67)

Max

.110 (2.79)

MT

2

.147 (3.75)

Dia Max

.500

(12.7)

Max

.070 (1.78) Max

MT

.100 (2.54)

.250 (6.35)

Max

.500

(12.7)

Min

1

Gate

MT

2