NTE NTE56071, NTE56070 Datasheet
NTE56070 & NTE56071
TRIAC, 25A, High Commutation
Description:
The NTE56070 and NTE56071 are glass passivated, high commutation TRIACs in a TO220 type
package designed for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
These devices will commutate the full rated RMS current at the maximum rated junction temperature,
without the aid of a snubber.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage (Note 1), V
NTE56070 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE56071 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (Full Sine Wave, TMB ≤ 91°C), IT(RMS) 25A. . . . . . . . . . . . . . . . . . . . . . . . . .
Non–Repetitive Peak On–State Current, I
(Full Sine Wave, TJ = +25°C prior to Surge)
t = 20ms 190A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
t = 16.7ms 209A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I2t for Fusing (t = 10ms), I2t 180A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 30A, IG = 0.2A, dIG/dt = 0.2A/µs) 100A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current, I
Peak Gate Voltage, V
Peak Gate Power, P
GM
GM
GM
Average Gate Power (Over Any 20ms Period), P
Operating Junction Temperature, T
Storage Temperature Range, T
J
stg
Thermal Resistance, Junction–to–Mounting Base, R
Full Cycle 1.0K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Half Cycle 1.4K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction–to–Ambient, R
TSM
DRM
G(AV)
thJMB
thJA
2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the on–state. The rate–of–rise of current should not exceed
15A/µs.
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Gate Trigger Current
(+), G (+) I
MT
2
GT
MT2 (+), G (–) 2 21 50 mA
MT2 (–), G (–) 2 34 50 mA
Latching Current
MT2 (+), G (+) I
MT2 (+), G (–) – 34 90 mA
MT2 (–), G (–) – 30 60 mA
Holding Current I
On–State Voltage V
Gate Trigger Voltage V
Off–State Leakage Current I
Dynamic Characteristics
Critical Rate–of–Rise of
dVD/dt VDM = 67% V
Off–State Voltage
Critical Rate–of–Change of
dI
com
Commutating Current
Gate Controlled Turn–On Time t
VD = 12V, IT = 0.1A, Note 2 2 18 50 mA
VD = 12V, IT = 0.1A – 31 60 mA
L
VD = 12V, IT = 0.1A – 31 60 mA
H
IT = 30A – 1.3 1.55 V
T
VD = 12V, IT = 0.1A – 0.7 1.5 V
GT
VD = 400V, IT = 0.1A, TJ = +125°C 0.25 0.4 – V
VD = V
D
max, TJ = +125°C – 0.1 0.5 mA
DRM
max, TJ = +125°C,
DRM
1000 4000 – V/µs
Exponential Waveform, Gate Open
/dt VDM = 400V, TJ = +1 25°C, ITRM S = 25 A,
– 44 – A/ms
without Snubber, Gate Open
ITM = 12A, VD = V
gt
max, IG = 0.1A,
DRM
– 2 – µs
dIG/dt = 5A/µs
Note 2. Device does not trigger in the MT2 (–), G (+) quadrant.
.420 (10.67)
Max
.110 (2.79)
MT
.147 (3.75)
Dia Max
.070 (1.78) Max
MT
.100 (2.54)
1
2
(12.7)
.250 (6.35)
Max
(12.7)
Gate
MT
.500
Max
.500
Min
2
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