NTE NTE56067, NTE56066 Datasheet

NTE56066 & NTE56067

TRIAC, 16A, High Commutation

Description:

The NTE56066 and NTE56067 are glass passivated, high commutation TRIACs in a TO220 type
package designed for use in circuits where static and dynamic dV/dt and high dI/dt can occur. These
devices will commutate the full rated RMS current at the maximum rated junction temperature, without
the aid of a snubber.

Absolute Maximum Ratings:

Repetitive Peak Off–Sate Voltage (Note 1), V

NTE56066 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE56067 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RMS On–State Current (Full Sine Wave, TMB ≤ 99°C), IT(RMS) 16A. . . . . . . . . . . . . . . . . . . . . . . . . .

Non–Repetitive Peak On–State Current, I

(Full Sine Wave, TJ = +25°C prior to Surge)

t = 20ms 140A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

t = 16.7ms 150A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

I2t for Fusing (t = 10ms), I2t 98A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt

(ITM = 20A, IG = 0.2A, dIG/dt = 0.2A/µs) 100A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Gate Current, I
Peak Gate Voltage, V
Peak Gate Power, P

GM

GM

GM

Average Gate Power (Over Any 20ms Period), P
Operating Junction Temperature, T
Storage Temperature Range, T

J

stg

Thermal Resistance, Junction–to–Mounting Base, R

Full Cycle 1.2K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Half Cycle 1.7K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Typical Thermal Resistance, Junction–to–Ambient, R

TSM

DRM

G(AV)

thJMB

thJA

2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,

but the TRIAC may switch to the on–state. The rate–of–rise of current should not exceed
15A/µs.

Electrical Characteristics: (TJ = +25°C unless otherwise specfied)

Parameter Symbol Test Conditions Min Typ Max Unit

Static Characteristics

Gate Trigger Current

(+), G (+) I

MT

2

GT

MT2 (+), G (–) 2 21 50 mA
MT2 (–), G (–) 2 34 50 mA

Latching Current

MT2 (+), G (+) I
MT2 (+), G (–) – 34 90 mA
MT2 (–), G (–) – 30 60 mA

Holding Current I
On–State Voltage V
Gate Trigger Voltage V

Off–State Leakage Current I

Dynamic Characteristics

Critical Rate–of–Rise of

dVD/dt VDM = 67% V

Off–State Voltage

Critical Rate–of–Change of

dI

com

Commutating Current

Gate Controlled Turn–On Time t

VD = 12V, IT = 0.1A, Note 2 2 18 50 mA

VD = 12V, IT = 0.1A – 31 60 mA

L

VD = 12V, IT = 0.1A – 31 60 mA

H

IT = 20A – 1.2 1.5 V

T

VD = 12V, IT = 0.1A – 0.7 1.5 V

GT

VD = 400V, IT = 0.1A, TJ = +125°C 0.25 0.4 – V
VD = V

D

max, TJ = +125°C – 0.1 0.5 mA

DRM

max, TJ = +125°C,

DRM

1000 4000 – V/µs

Exponential Waveform, Gate Open

/dt VDM = 400V, TJ = +1 25°C, ITRM S = 16 A,

– 28 – A/ms

without Snubber, Gate Open
ITM = 12A, VD = V

gt

max, IG = 0.1A,

DRM

– 2 – µs

dIG/dt = 5A/µs

Note 2. Device does not trigger in the MT2 (–), G (+) quadrant.

.420 (10.67)

Max

.110 (2.79)

MT

.147 (3.75)

Dia Max

.070 (1.78) Max

MT

.100 (2.54)

1

2

(12.7)

.250 (6.35)

Max

(12.7)

Gate

MT

.500
Max

.500

Min

2