NTE NTE56065 Datasheet

NTE56065

TRIAC, 600VRM, 12A,

High Commutation

Description:

The NTE56065 is a glass passivated, high commutation TRIAC in an isolated full–pack type package
designed for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This device
will commutate the full rated RMS current at the maximum rated junction temperature, without the aid
of a snubber.

Absolute Maximum Ratings:

Repetitive Peak Off–Sate Voltage (Note 1), V

DRM

RMS On–State Current (Full Sine Wave, THS ≤ 56°C), IT(RMS) 12A. . . . . . . . . . . . . . . . . . . . . . . . . .

Non–Repetitive Peak On–State Current, I

TSM

(Full Sine Wave, TJ = +25°C prior to Surge)

t = 20ms 95A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

t = 16.7ms 105A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

I2t for Fusing (t = 10ms), I2t 45A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt

(ITM = 20A, IG = 0.2A, dIG/dt = 0.2A/µs) 100A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Gate Current, I
Peak Gate Voltage, V
Peak Gate Power, P
Average Gate Power (Over Any 20ms Period), P
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Heatsink (Full or Half Cycle), R

GM

GM

GM

stg

G(AV)

J

–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJHS

With Heatsink Compound 4.0K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Without Heatsink Compound 5.5K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Typical Thermal Resistance, Junction–to–Ambient, R

thJA

600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

55K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,

but the TRIAC may switch to the on–state. The rate–of–rise of current should not exceed
15A/µs.

Electrical Characteristics: (TJ = +25°C unless otherwise specfied)

Parameter Symbol Test Conditions Min Typ Max Unit

Static Characteristics

Gate Trigger Current

(+), G (+) I

MT

2

GT

MT2 (+), G (–) 2 21 50 mA
MT2 (–), G (–) 2 34 50 mA

Latching Current

MT2 (+), G (+) I
MT2 (+), G (–) – 34 90 mA
MT2 (–), G (–) – 30 60 mA

Holding Current I
On–State Voltage V
Gate Trigger Voltage V

Off–State Leakage Current I

Dynamic Characteristics

Critical Rate–of–Rise of

dVD/dt VDM = 402V, TJ = +125°C,

Off–State Voltage

Critical Rate–of–Change of

dI

com

Commutating Current

Gate Controlled Turn–On Time t

Isolation Characteristics

RMS Isolation Voltage from All

V

ISOL

3 Pins to External Heatsink

Capacitance from T2 to

C

ISOL

External Heatsink

VD = 12V, IT = 0.1A, Note 2 2 18 50 mA

VD = 12V, IT = 0.1A – 31 60 mA

L

VD = 12V, IT = 0.1A – 31 60 mA

H

IT = 17A – 1.3 1.6 V

T

VD = 12V, IT = 0.1A – 0.7 1.5 V

GT

VD = 400V, IT = 0.1A, TJ = +125°C 0.25 0.4 – V
VD = 600V, TJ = +125°C – 0.1 0.5 mA

D

1000 4000 – V/µs

Exponential Waveform, Gate Open

/dt VDM = 400V, TJ = +1 25°C, ITRM S = 12 A,

– 24 – A/ms

without Snubber, Gate Open
ITM = 12A, VD = V

gt

max, IG = 0.1A,

DRM

– 2 – µs

dIG/dt = 5A/µs

f = 50 – 60Hz, Sinusoidal Waveform,

– – 2500 V

R.H. ≤ 65%, Clean and Dustfree
f = 1MHz – 10 – pF

Note 2. Device does not trigger in the MT2 (–), G (+) quadrant.

.181 (4.6) Max

.114 (2.9)

(13.5)

.126 (3.2) Dia Max

.252

(6.4)

.622

(15.0)

Max

.118
(3.0)
Max

.531

Min

.405 (10.3)

Isol

MT

1

Max

MT

2

G

.100 (2.54).098 (2.5)