NTE NTE56039 Datasheet
NTE56039
TRIAC, 4A Sensitive Gate
Description:
The NTE56039 i s a g lass p assivated T R IAC i n a p lastic S OT89 t ype package d esigned f or u se i n gener al
purpose bidirectional switching and p hase c ontrol applications, where h i gh s ensiti vity is required i n a ll f our
quadrants.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage (Note 1), V
DRM
RMS On–State Current (Full Sine Wave, TMB ≤ 107°C), IT(RMS) 4A. . . . . . . . . . . . . . . . . . . . . . . . . .
Non–Repetitive Peak On–State Current (Full Sine Wave, TJ = +25°C prior to Surge), I
TSM
t = 20ms 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
t = 16.7ms 27A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I2t for Fusing (t = 10ms), I2t 3.1A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 6A, IG = 0.2A, dIG/dt = 0.2A/µs)
MT2 (+), G (+) 50A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MT2 (+), G (–) 50A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MT2 (–), G (–) 50A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MT2 (–), G (+) 10A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current, I
Peak Gate Voltage, V
Peak Gate Power, P
Average Gate Power (Over Any 20ms Period), P
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Mounting Base, R
GM
GM
GM
stg
G(AV)
J
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJMB
Full Cycle 3.0K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Half Cycle 3.7K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction–to–Ambient, R
thJA
500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the On–State. The rate–of–rise of current should not exceed
3A/µs.
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Gate Trigger Current
MT2 (+), G (+) I
GT
MT2 (+), G (–) – 4.0 10 mA
MT2 (–), G (–) – 5.0 10 mA
MT2 (–), G (+) – 11.0 25 mA
Latching Current
MT2 (+), G (+) I
MT2 (+), G (–) – 10.0 20 mA
MT2 (–), G (–) – 2.5 15 mA
MT2 (–), G (+) – 4.0 20 mA
VD = 12V, IT = 0.1A – 2.5 10 mA
VD = 12V, IT = 0.1A – 3.0 15 mA
L
Holding Current I
On–State Voltage V
Gate Trigger Voltage V
Off–State Leakage Current I
Dynamic Characteristics
Critical Rate–of–Rise of
dVD/dt VDM = 335V, TJ = +125°C,
Off–State Voltage
Gate Controlled Turn–On Time t
.307 (7.8)
.118 (3.0)
Min
MT1MT2G
H
GT
D
gt
Max
VD = 12V, IT = 0.1A – 2.2 15 mA
IT = 5A – 1.4 1.7 V
T
VD = 12V, IT = 0.1A – 0.7 1.5 V
VD = 400V, IT = 0.1A, TJ = +125°C 0.25 0.4 – V
VD = 500V, TJ = +125°C – 0.1 0.5 mA
– 50 – V/µs
Exponential Waveform, Gate Open
ITM = 6A, VD = 500V, IG = 0.1A,
– 2 – µs
dIG/dt = 5A/µs
.100 (2.54)
.147
(3.75)
.437
(11.1)
Max
See
Note
.100 (2.54)
.602
(15.3)
Min
.090 (2.29) .047 (1.2)
Note: Center Pin connected to metal part of mounting surface.
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