NTE NTE56033 Datasheet

NTE56033

TRIAC, 45 Amp

Features:

D Blocking Voltage of 600V
D Glass–Passivated Chip
D Gate Triggering Guaranteed in Four Modes
D Excellent Thermal Impedance and High Reliability Construction

Absolute Maximum Ratings:

Peak Repetitive Off–State Voltage (1/2 Sine Wave 6.3µs), V

On–State RMS Current (TC = +60°C, 360° Conduction Angle), IT(RMS) 40A. . . . . . . . . . . . . . . . . . .

Peak Non–Repetitive Surge Current (+25° < TJ initial < +110°C, One Full Cycle), I

60Hz 420A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50Hz 400A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Circuit Fusing (t = 10ms), I2t 800A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Gate Current (t = 10µs, Note 1), I
Peak Gate Voltage (t = 10µs, Note 1), V
Peak Gate Power (t = 10µs, Note 1), P
Average Gate Power, P

G(AV)

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Contact (with Grease), R
Thermal Resistance, Junction–to–Case, R

GM

GM

GM

J

thCH

thJC(DC)

Thermal Resistance, Junction–to–Case (F = 50Hz, 360° Conduction Angle), R

DRM

TSM

–40° to +110°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJC(AC)

0.2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.33°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1°C/W. . . .

600V. . . . . . . . . . . . . . . . . . . . . . . .

±10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±16V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. For either polarity of gate voltage with reference to MT1.
Note 2. For either polarity of MT2 voltage with reference to MT1.

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Peak Forward Blocking Current I
Gate Trigger Current

Quadrant I, II, III

Quadrant IV

Gate Trigger Voltage V

DRM

I

TJ = +110°C, VD = 600V, Gate Open, Note 2 – 0.75 4.0 mA

GT

VD = 12V, RL = 33Ω, Pulse Duration > 20µs,
Note 1

VD = 12V, RL = 33Ω, Pulse Duration > 20µs,

GT

Note 1

Gate Non–Trigger Voltage V

VD = 600V, TJ = +110°C, RL = 3k,

GD

Pulse Duration > 20µs, Note 1
Holding Current I
Peak On–State Voltage V
Gate Controlled Turn–On Time t

VD = 12V, IT = 1A, Gate Open, Note 2 – 30 80 mA

H

TMITM

gt

= 60A, tp = 10ms, Note 2 – – 1.6 V

VD = 600V, ITM = 40A, IG = 1A,

diG/dt = 10A/µs, Note 1
Critical Rate of Rise of

dv/dt VD = 600V, Gate Open, TJ = +110°C, Note 2 50 150 – V/µs

Off–State Voltage

Critical Rate of Rise of

Commutation Voltage

dv/dt(c) VD = 600V, ITM = 40A, TC = +60°C

Commutating di/dt = 18A/ms, Note 2

Note 1. For either polarity of gate voltage with reference to MT1.
Note 2. For either polarity of MT2 voltage with reference to MT1.

1 – 50 mA
1 – 75 mA
– – 2.5 V

0.2 – – V

– 2.5 – µs

– 5 – V/µs

.600 (15.24)

MT

2

MT

1

.156

(3.96)

Dia.

MT

2

Gate

.060 (1.52)

.173 (4.4)

.550

(13.97)

.430

(10.92)

.500

(12.7)

Min

.055 (1.4) .015 (0.39)

.215 (5.45)

NOTE: Dotted line indicates that case may have square corners.