NTE NTE56030, NTE56031 Datasheet
NTE56030 & NTE56031
TRIAC, 40 Amp
Isolated Tab
Description:
The NTE56030 and NTE56031 are 40 Amp TRIACs in a TO218 type package with an isolated tab
designed to be driven directly with IC and MOS devices.
Absolute Maximum Ratings:
Peak Repetitive Off–State Voltage (Gate Open, TJ = +110°C, Note 1), V
NTE56030 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE56031 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (TC = +80°C, 360° Conduction Angle), IT(RMS) 40A. . . . . . . . . . . . . . . . . . .
Peak Non–Repetitive Surge Current (One Cycle, at 50Hz or 60Hz), I
Peak Gate–Trigger Current (t = 3µs), I
Peak Gate–Power Dissipation (IGT ≤ I
Average Gate–Power Dissipation, P
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Typical Thermal Resistance, Junction–to–Case, R
GTM
GTM
G(AV)
), P
J
GM
thJC(DC)
TSM
DRM
400A. . . . . . . . . . . . . . . . .
4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +110°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.95°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. All values apply in either direction.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off–State Current I
Gate Trigger Current
Quadrant I, II, III
Quadrant IV
Gate Trigger Voltage V
Gate Non–Trigger Voltage V
Holding Current I
Peak On–State Voltage V
DRM
I
TJ = +110°C, VD = V
1
VD = 12V, RL = 30Ω
GT
T2 (+) G (+), T2 (–) G (–) Quads I and III
T2 (+) G (–), T2 (–) G (+) Quads II and IV
VD = 12V, RL = 30Ω – – 2.5 V
GT
VD = V
GD
Pulse Duration > 20µs, Note 1
Gate Open, Note 1 – – 100 mA
H
TMIT
= 40A, Note 1 – – 1.8 V
, TJ = +110°C, RL = 3k,
DRM
, Gate Open, Note
DRM
Note 1. All values apply in either direction.
– – 0.5 mA
– – 100 mA
– – 150 mA
0.2 – – V
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Gate Controlled Turn–On Time t
VD = V
gt
tR = 0.1µs
Critical Rate of Rise of
Off–State Voltage
Critical Rate of Rise of
Commutation Voltage
dv/dt VD = V
1
dv/dt(c) VD = V
Gate Unenergized, Note 1
Note 1. All values apply in either direction.
.600 (15.24)
, IT = 10A (Peak), IGT = 200mA,
DRM
, Gate Open, TC = +110°C, Note
DRM
, IT = 40A, TC = +80°C
DRM
.060 (1.52)
.173 (4.4)
– 3 – µs
– 200 – V/µs
– 5 – V/µs
Isolated
MT
1
.156
(3.96)
Dia.
MT
2
Gate
.215 (5.45)
.550
(13.97)
.430
(10.92)
.500
(12.7)
Min
.055 (1.4) .015 (0.39)
NOTE: Dotted line indicates that case may have square corners.
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