NTE NTE56008, NTE56004, NTE56010, NTE56006 Datasheet
NTE56004 thru NTE56010
TRIAC, 15 Amp
The NTE56004 thru NTE56010 series of TRIACs are designed primarily for full–wave AC control applications, such as solid–state relays, motor controls, heating controls and power supplies; or wherever full–wave silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch from
a blocking to a conducting state for either polarity of applied anode voltage with positive or negative
gate triggering.
Features:
D Blocking Voltage from 200 to 800 Volts
D All Diffused and Glass Passivated Junctions
D Small, Rugged, TO220 package for Low Thermal Resistance, High Heat Dissipation and Durability
D Gate Triggering specified in Four Quadrants
Absolute Maximum Ratings:
Peak Repetitive Off–State Voltage, (TJ = –40° to 125°C), V
DRM
NTE56004 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE56006 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE56008 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE56010 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Voltage, V
On–State Current RMS (Full Cycle Sine Wave 50 to 60Hz,TC = +90°C), I
GM
T(RMS)
Circuit Fusing (t = 8.3ms) I2t 93A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Surge Current (One Full Cycle, 60Hz, TC = +80°C), I
TSM
Preceded and followed by rated current 150A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power (TC = +80°C, Pulse Width = 2µs), P
Average Gate Power (TC = +80°C, t = 8.3ms), P
Peak Gate Current, I
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
GM
J
stg
thJC
G(AV)
GM
–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15A. . . . . . . . . . .
20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics (TC = 25°C, and either polarity of MT2 to MT1 Voltage, unless
otherwise noted)
Characteristics Symbol Min Typ Max Unit
Peak Forward or Reverse Blocking Current
(Rated V
DRM
, or V
, Gate open) TJ=25°C
RRM
T
J
Peak On–State Voltage
= 21 A Peak; Pulse Width = 1 to 2ms,
(I
TM
Duty Cycle ≤ 2%)
Gate Trigger Current (Continuous dc)
= 12Vdc, RL = 100 Ohms)
(V
D
MT2(+) G(+), MT2(+) G(–), MT2(–) G(–)
MT2(–), G(+)
Gate Trigger Voltage (Continuous dc)
= 12Vdc, RL = 100 Ohms)
(V
D
MT2(+) G(+), MT2(+) G(–)
MT2(–) G(–)
MT2(–) G(+)
= Rated V
(V
D
, RL = 10k Ohms, TJ = 110°C)
DRM
MT2(+) G(+), MT2(–) G(–), MT2(+) G(–)
MT2(–) G(+)
Holding Current (Either Direction)
= 12Vdc, IT = 200mA, Gate Open)
(V
D
Turn–On Time
= Rated V
(V
D
= 120mA, Rise Time = 0.1µs, Pulse Width = 2µs)
(I
GT
, ITM = 17A)
DRM
Critical Rate of Rise of Commutation Voltage
= Rated V
(V
D
di/dt = 8A/ms, Gate Unenergized, T
, ITM = 21 A, Commutating
DRM
C
= 80°C)
=125°C
I
,
DRM
I
RRM
V
TM
I
GT
V
GT
I
H
t
gt
–
–
–
–
10
2
µA
mA
– 1.3 1.6 Volts
mA
–
–
–
–
50
75
Volts
–
–
–
0.2
0.2
0.9
1.1
1.4
–
–
2
2
2.5
–
–
– 6 40 mA
– 1.5 – µs
dv/dt(c) – 5 – V/µs
.147 (3.75)
Dia Max
.070 (1.78) Max
.100 (2.54)
MT
1
.420 (10.67)
Max
MT
2
.110 (2.79)
.250
(6.35)
Max
Gate
MT
.500
(12.7)
Max
.500
(12.7)
Min
2
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