NTE NTE56 Datasheet

High Gain Switch and Pass Regulator

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I

C

B

Total Power Dissipation (T
Junction Temperature, T
Storage Temperature Range, T

CEO

CB

EB

= +25°C), P

C

J

NTE56

Silicon NPN Transistor

D

stg

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
Collector–Emitter Breakdown Voltage V
DC Current Gain h
Collector–Emitter Saturation Voltage V
Current Gain–Bandwidth Product f

(TC = +25°C unless otherwise specified)

CBO
EBO

(BR)CEOIC

FE

CE(sat)IC

T

VCB = 100V – – 10 µA
VEB = 6V – – 100 µA

VCE = 4V, IC = 0.5A 500 – –

VCE = 12V, IE = –0.2A – 15 – MHz

= 25mA 80 – – V

= 2A, IB = 50mA – – 0.5 V

.420 (10.67)

Max

.110 (2.79)

.147 (3.75)

Dia Max

.070 (1.78) Max

Base

.500

(12.7)

Max

.250 (6.35)

Max

.500

(12.7)

Min

Emitter

.100 (2.54)

Collector/Tab