NTE NTE5570, NTE5572 Datasheet
NTE5570, NTE5572, & NTE5574
Silicon Controlled Rectifier
for Phase Control Applications
Electrical Characteristics: (Maximum values @ TJ = +125°C unless otherwise specified)
Repetitive Peak Voltages, V
NTE5570 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5572 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5574 1200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Non–Repetitive Peak Reverse Blocking Voltage, V
NTE5570 500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5572 900V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5574 1300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average On–State Current (Half Sine Wave, 180°, TC = +85°C), I
RMS On–State Current (DC @ TC = +75°C), I
Peak One–Cycle, Non–Repetitive Surge Current (10ms Duration, Sinusoidal Half Wave), I
No Voltage Reapplied 1900A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100% V
Reapplied 1600A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RRM
Maximum I2t for Fusing (10ms Duration, Sinusoidal Half Wave), I2t
No Voltage Reapplied 18000A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100% V
Reapplied 12700A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RRM
Peak Positive Gate Current (5ms Pulse Width), I
Peak Positive Gate Voltage (5ms Pulse Width), +V
Peak Negative Gate Voltage (5ms Pulse Width), –V
Average Gate Power (f = 50Hz, Duty Cycle = 50%), P
Peak Gate Power (50ms Pulse Width), P
Rate of Rise of Off–State Voltage (Exponential to 67% Rated V
Rate of Rise of ON–State Current, di/dt
(Gate Drive 20V, 65Ω, with tr = 0.5µs, Vd = Rated V
Non–Repetitive 300A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Delay Time, t
d
(Gate Pulse: 10V, 15Ω Source, tp = 6µs, tr = 0.1µs, Vd = rated V
Typical Turn–On Time, t
q
(ITM = 50A, di/dt = –5A/µs min, VR = 50V, dv/dt = 20V/µs, Gate Bias: 0V 25Ω, tp = 500µs) 1 10µs
On–State Voltage (IPk = 250A, 10ms Sine Pulse), V
Repetitive Peak Off–State Current (At V
Repetitive Peak Reverse Current (At V
Maximum Gate Current Required to Trigger, I
(6V Anode–to–Cathode Applied, TJ = +25°C) 120mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Gate Voltage Required to Trigger, V
(6V Anode–to–Cathode Applied, TJ = +25°C) 2.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Holding (Anode Supply 12V Resistive Load, TJ = +25°C), I
Maximum Gate Voltage which will not Trigger any Device, V
DRM
& V
RRM
RRM
GM
DRM
), I
), I
T(RMS)
GM
DRM
RRM
GT
GT
RSM
GM
GM
TM
T(AV)
G
), dv/dt 500V/µs. . . . . . . . . . . .
DRM
, ITM = 2 x di/dt snubber 0.2µF)
DRM
, ITM = 50A) 1µs. . . . .
DRM
H
GD
80A. . . . . . . . . . . . . . . . . . . .
125A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TSM
3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150mA. . . . . . . . . . . . . . . . .
0.25V. . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics (Cont’d): (Maximum values @ TJ = +125°C unless otherwise specified)
Operating Temperature Range, T
Storage Temperature Range, T
J
stg
Thermal Resistance, Junction–to–Case (DC Operation), R
Thermal Resistance, Case–to–Heat Sink, R
thC–HS
tnJC
–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.3°C/W. . . . . . . . . . . . . . . . . . . . . . .
(Mounting Surface Smooth, Flat, and Greased) 0.1°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.227 (31.18) Max
(Across Corners)
.875 (22.22) Dia
(Ceramic)
For No. 6 Screw
7.500
(190.5)
Max
(Terminals 1 & 2)
1.031 (26.18)
Dia Max
Seating Plane
Cathode
Cathode
(Red)
.827
(27.0)
Max
.280 (7.11)
Dia Max
Gate
(White)
6.260
(159.0)
Max
(Terminal 3)
2.500
(63.5)
Max
.500 (12.7) Max)
1/2–20 UNF
Anode
Loading...