NTE NTE5566, NTE5564, NTE5562 Datasheet

NTE5562, NTE5564, NTE5566

Silicon Controlled Rectifiers (SCR’s)

Description:

The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO–48 isolated stud
TO–48 type package designed for industrial and consumer applications such as power supplies, bat­tery chargers, temperature, motor, light and welder controls.

Absolute Maximum Ratings:

Repetitive Peak Off–State Voltage & Reverse Voltage (TJ = +100°C), V

NTE5562 200. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5564 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5566 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RMS On–State Current (T
Peak Surge (Non–Repetitive) On–State Current, I
Peak Gate–Trigger Current (3µs Max), I
Peak Gate–Power Dissipation (I
Average Gate Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction–to–Case, R

= +75°C), I

C

≤ for 3µs Max), P

GT

oper

stg

T(RMS)

TSM

GTM

GM

G(AV)

thJC

DRM

, V

RRM

35A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

300A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.6/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Unit

Peak Off–State Current I

Maximum On–State Voltage (Peak) V
DC Holding Current I
DC Gate Trigger Current I

DC Gate Controlled Turn–On Time T
Critical Rate of Rise of Off–State Voltage Critical

: (At Maximum Ratings and Specified Case Temperatures)

DRM

I

RRM

HO
GT

dv/dt

,

TJ = +100°C, Gate Open, V

TC = +25°C – – 1.6 V

TM

TC = +25°C, Gate Open – – 50 mA
Anode Voltage = 12Vdc, RL = 30Ω,

=+ 25°C

T

C

IGT = 150mA , tD+t

GT

TC = +100°C, Gate Open – 100 – V/µs

R

DRM

&V

RRM

– – 2.0 mA

– – 30 mA

– 2.5 – µs

.562

(14.28)

Max

1.260
(32.0)

Max

Cathode
Anode
Gate

.595

(15.1)

Max

.445

(11.3)

Max

1/4–28 UNF–2A
Isolated Stud