NTE NTE5566, NTE5564, NTE5562 Datasheet
NTE5562, NTE5564, NTE5566
Silicon Controlled Rectifiers (SCR’s)
Description:
The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO–48 isolated stud
TO–48 type package designed for industrial and consumer applications such as power supplies, battery chargers, temperature, motor, light and welder controls.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage & Reverse Voltage (TJ = +100°C), V
NTE5562 200. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5564 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5566 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (T
Peak Surge (Non–Repetitive) On–State Current, I
Peak Gate–Trigger Current (3µs Max), I
Peak Gate–Power Dissipation (I
Average Gate Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction–to–Case, R
= +75°C), I
C
≤ for 3µs Max), P
GT
oper
stg
T(RMS)
TSM
GTM
GM
G(AV)
thJC
DRM
, V
RRM
35A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.6/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off–State Current I
Maximum On–State Voltage (Peak) V
DC Holding Current I
DC Gate Trigger Current I
DC Gate Controlled Turn–On Time T
Critical Rate of Rise of Off–State Voltage Critical
: (At Maximum Ratings and Specified Case Temperatures)
DRM
I
RRM
HO
GT
dv/dt
,
TJ = +100°C, Gate Open, V
TC = +25°C – – 1.6 V
TM
TC = +25°C, Gate Open – – 50 mA
Anode Voltage = 12Vdc, RL = 30Ω,
=+ 25°C
T
C
IGT = 150mA , tD+t
GT
TC = +100°C, Gate Open – 100 – V/µs
R
DRM
&V
RRM
– – 2.0 mA
– – 30 mA
– 2.5 – µs
.562
(14.28)
Max
1.260
(32.0)
Max
Cathode
Anode
Gate
.595
(15.1)
Max
.445
(11.3)
Max
1/4–28 UNF–2A
Isolated Stud
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