NSC MM54HC123AJ-MLS Datasheet

TL/F/5206

MM54HC123A/MM74HC123A Dual Retriggerable Monostable Multivibrator

January 1988

MM54HC123A/MM74HC123A
Dual Retriggerable Monostable Multivibrator

General Description

The MM54/74HC123A high speed monostable multivibra­tors (one shots) utilize advanced silicon-gate CMOS tech­nology. They feature speeds comparable to low power
Schottky TTL circuitry while retaining the low power and
high noise immunity characteristic of CMOS circuits.

Each multivibrator features both a negative, A, and a posi­tive, B, transition triggered input, either of which can be
used as an inhibit input. Also included is a clear input that
when taken low resets the one shot. The ’HC123 can be
triggered on the positive transition of the clear while A is
held low and B is held high.

The ’HC123A is retriggerable. That is it may be triggered
repeatedly while their outputs are generating a pulse and
the pulse will be extended.

Pulse width stability over a wide range of temperature and
supply is achieved using linear CMOS techniques. The out-

put pulse equation is simply: PW

e

(R

EXT

)(C

EXT

); where PW
is in seconds, R is in ohms, and C is in farads. All inputs are
protected from damage due to static discharge by diodes to
V

CC

and ground.

Features

Y

Typical propagation delay: 25 ns

Y

Wide power supply range: 2V– 6V

Y

Low quiescent current: 80 mA maximum (74HC Series)

Y

Low input current: 1 mA maximum

Y

Fanout of 10 LS-TTL loads

Y

Simple pulse width formula TeRC

Y

Wide pulse range: 400 ns to%(typ)

Y

Part to part variation:g5% (typ)

Y

Schmitt TriggerA&Binputs enable infinite signal input
rise and fall times.

Connection Diagram

Dual-In-Line Package

TL/F/5206– 1

Top View

Order Number MM54HC123A or MM74HC123A

Timing Component

TL/F/5206– 2

Note: Pin 6 and Pin 14 must be

hard-wired to GND.

Truth Table

Inputs Outputs

Clear AB Q Q

LXX L H
XHX L H
XXL L H
HL

u

Éß

H

v

HÉß

u

LH Éß

H

e

High Level

L

e

Low Level

u

e

Transition from Low to High

v

e

Transition from High to Low

É

e

One High Level Pulse

ß

e

One Low Level Pulse

X

e

Irrelevant

C

1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.

Absolute Maximum Ratings (Notes1&2)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Supply Voltage (V

CC

)

b

0.5V toa7.0V

DC Input Voltage (VIN)

b

1.5V to V

CC

a

1.5V

DC Output Voltage (V

OUT

)

b

0.5V to V

CC

a

0.5V

Clamp Diode Current (IIK,IOK)

g

20 mA

DC Output Current, per pin (I

OUT

)

g

25 mA

DC VCCor GND Current, per pin (ICC)

g

50 mA

Storage Temperature Range (T

STG

)

b

65§Ctoa150§C

Power Dissipation (PD)

(Note 3) 600 mW
S.O. Package only 500 mW

Lead Temperature (T

L

)

(Soldering 10 seconds) 260

§

C

Operating Conditions

Min Max Units

Supply Voltage (V

CC

)26V

DC Input or Output Voltage 0 V

CC

V

(V

IN,VOUT

)

Operating Temp. Range (TA)

MM74HC

b

40

a

85

§

C

MM54HC

b

55

a

125

§

C

Input Rise or Fall Times

(Clear Input)

V

CC

e

2.0V(tr,tf) 1000 ns

V

CC

e

4.5V 500 ns

V

CC

e

6.0V 400 ns

DC Electrical Characteristics (Note 4)

T

A

e

25§C

74HC 54HC

Symbol Parameter Conditions V

CC

T

A

eb

40 to 85§CT

A

eb

55 to 125§C

Units

Typ Guaranteed Limits

V

IH

Minimum High Level Input 2.0V 1.5 1.5 1.5 V
Voltage 4.5V 3.15 3.15 3.15 V

6.0V 4.2 4.2 4.2 V

V

IL

Maximum Low Level Input 2.0V 0.3 0.3 0.3 V
Voltage 4.5V 0.9 0.9 0.9 V

6.0V 1.2 1.2 1.2 V

V

OH

Minimum High Level V

IN

e

VIHor V

IL

Output Voltage

l

I

OUT

l

s

20 mA 2.0V 2.0 1.9 1.9 1.9 V

4.5V 4.5 4.4 4.4 4.4 V

6.0V 6.0 5.9 5.9 5.9 V

V

IN

e

VIHor V

IL

V

l

I

OUT

l

s

4.0 mA 4.5V 4.2 3.98 3.84 3.7 V

l

I

OUT

l

s

5.2 mA 6.0V 5.7 5.48 5.34 5.2 V

V

OL

Maximum Low Level V

IN

e

VIHor V

IL

Output Voltage

l

I

OUT

l

s

20 mA 2.0V 0 0.1 0.1 0.1 V

4.5V 0 0.1 0.1 0.1 V

6.0V 0 0.1 0.1 0.1 V

V

IN

e

VIHor V

IL

V

l

I

OUT

l

s

4 mA 4.5V 0.2 0.26 0.33 0.4 V

l

I

OUT

l

s

5.2 mA 6.0V 0.2 0.26 0.33 0.4 V

I

IN

Maximum Input Current V

IN

e

VCCor GND 6.0V

g

0.5

g

5.0

g

5.0 mA

(Pins 7, 15)

I

IN

Maximum Input Current V

IN

e

VCCor GND 6.0V

g

0.1

g

1.0

g

1.0 mA

(all other pins)

I

CC

Maximum Quiescent Supply V

IN

e

VCCor GND 6.0V 8.0 80 160 mA

Current (standby) I

OUT

e

0 mA

I

CC

Maximum Active Supply V

IN

e

VCCor GND 2.0V 36 80 110 130 mA

Current (per R/C

EXT

e

0.5VCC4.5V 0.33 1.0 1.3 1.6 mA

monostable) 6.0V 0.7 2.0 2.6 3.2 mA

Note 1: Maximum Ratings are those values beyond which damage to the device may occur.

Note 2: Unless otherwise specified all voltages are referenced to ground.

Note 3: Power Dissipation Temperature Derating:

Plastic ‘‘N’’ Package:

b

12mW/§C from 65§Cto85§C

Ceramic ‘‘J’’ Package:

b

12mW/§C from 100§Cto125§C.

Note 4: For a power supply of 5V

g

10% the worst-case output voltages (VOH,VOL) occur for HC at 4.5V. Thus the 4.5V values should be used when designing

with this supply. Worst-case V

IH

and VILoccur at V

CC

e

5.5V and 4.5V respectively. (The VIHvalue at 5.5V is 3.85V.) The worst-case leakage current (IIN,ICC, and

I

OZ

) occur for CMOS at the higher voltage and so the 6.0V values should be used.

2