NSC MF10CCN, MF10CCWM, MF10ACN Datasheet

MF10 Universal Monolithic Dual Switched Capacitor Filter
General Description
The MF10 consists of 2 independent and extremely easy to use, general purpose CMOS active filter building blocks. Each block, together with anexternal clock and 3 to 4 resis­tors, can produce various 2nd order functions. Each building block has 3 output pins. One of the outputs can be config­ured to perform either an allpass, highpass or a notch func­tion; the remaining 2 output pins perform lowpass and band­pass functions. The center frequency of the lowpass and bandpass 2nd order functions can be either directly depen­dent on the clock frequency, or they can depend on both clock frequency and external resistor ratios. The center fre­quency of the notch and allpass functions is directly depen­dent on the clock frequency, while the highpass center fre­quency depends on both resistor ratio and clock. Up to 4th order functions can be performed by cascading the two 2nd order building blocks of the MF10; higher than 4th order functions can be obtained by cascading MF10 packages.
System Block Diagram
Any of the classical filter configurations (such as Butter­worth, Bessel, Cauer and Chebyshev) can be formed.
For pin-compatible device with improved performance refer to LMF100 datasheet.
Features
n Easy to use n Clock to center frequency ratio accuracy n Filter cutoff frequency stability directly dependent on
external clock quality
n Low sensitivity to external component variation n Separate highpass (or notch or allpass), bandpass,
lowpass outputs
n f
x Q range up to 200 kHz
O
n Operation up to 30 kHz n 20-pin 0.3" wide Dual-In-Line package n 20-pin Surface Mount (SO) wide-body package
±
June 1999
%
0.6
MF10 Universal Monolithic Dual Switched Capacitor Filter
Package in 20 pin molded wide body surface mount and 20 pin molded DIP.
© 1999 National Semiconductor Corporation DS010399 www.national.com
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Supply Voltage (V Voltage at Any Pin V
Input Current at Any Pin (Note 2) 5 mA Package Input Current (Note 2) 20 mA Power Dissipation (Note 3) 500 mW Storage Temperature 150˚C
+−V−
) 14V
V
+
+ 0.3V
− 0.3V
SO Package:
Vapor Phase (60 Sec.) 215˚C Infrared (15 Sec.) 220˚C
See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” (Appendix D) for other methods of soldering surface mount devices.
Operating Ratings (Note 1)
Temperature Range T MF10ACN, MF10CCN 0˚C TA≤ 70˚C MF10CCWM 0˚C T
MIN
TA≤ T
70˚C
A
ESD Susceptability (Note 11) 2000V Soldering Information
N Package: 10 sec 260˚C
Electrical Characteristics
+
=
V
+5.00V and V
=
25˚C.
Symbol Parameter Conditions Typical Tested Design Units
+−V−
V
I
S
f
O
f
CLK
f
CLK/fO
f
CLK/fO
H
OLP
V
OS1
V
OS2
V
OS3
V
OS2
V
OS3
V
OUT
GBW Op Amp Gain BW Product 2.5 MHz SR Op Amp Slew Rate 7 V/µs
=
−5.00V unless otherwise specified. Boldface limits apply for T
Supply Voltage Min 9 V
Maximum Supply Clock Applied to Pins 10 & 11 8 12 12 mA Current No Input Signal Center Frequency Min fOxQ<200 kHz 0.1 0.2 Hz Range Max 30 20 kHz Clock Frequency Min 5.0 10 Hz Range Max 1.5 1.0 MHz 50:1 Clock to
Center Frequency Ratio Deviation
100:1 Clock to Center Frequency Ratio Deviation
Clock Feedthrough Q=10
Q Error (MAX) Q=10 V (Note 4) Mode 1 f
DC Lowpass Gain Mode 1 R1=R2=10k 0 DC Offset Voltage (Note 5) DC Offset Voltage Min V (Note 5) Max (f
DC Offset Voltage Min V (Note 5) Max (f DC Offset Voltage V (Note 5) (f
DC Offset Voltage V (Note 5) (f Minimum Output BP, LP Pins R Voltage Swing N/AP/HP Pin R
Max 14 V
=
MF10C Q=10
MF10C Q=10
Min V Max (f
Mode 1
Mode 1
Mode 1
pin12 CLK/fO pin12 CLK/fO pin12 CLK/fO pin12 CLK/fO
V
pin12
(f
CLK/fO pin12 CLK/fO
=
L
=
L
=
+5V S
=
50) −85 −85
=
+5V S
=
50)
=
+5V All Modes −70 −100 −100 mV
=
50) −20 −20
=
0V S
=
100)
=
0V S
=
100)
=
0V All Modes −140 mV
=
100)
5k
3.5k
5V
V
pin12
=
f
250 KHz
CLK
=
0V
V
pin12
=
f
500 kHz
CLK
=
5V
pin12
=
250 kHz
CLK
=
V
0V
pin12
=
f
500 kHz
CLK
+
=
V
A/B
=
V
A/B
+
=
V
A/B
=
V
A/B
to T
MIN
(Note 8) Limit Limit
±
0.2
±
0.2
10 mV
±
2
±
2
±
5.0
−150 −185 −185 mV
−70 mV
−300 mV
−140 mV
±
4.25
±
4.25
; all other limits T
MAX
MF10ACN, MF10CCN,
MF10CCWM
(Note 9) (Note 10)
±
1.5
±
1.5
±
6
±
6
±
0.2
±
20
±
3.8
±
3.8
=
A
±
1.5
±
1.5
±
6
±
6
±
0.2 dB
±
20 mV
±
3.8 V
±
3.8 V
T
MAX
J
%
%
%
%
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Electrical Characteristics (Continued)
+
=
V
+5.00V and V
=
25˚C.
Symbol Parameter Conditions Typical Tested Design Units
I
SC
Dynamic Range(Note 6)
Maximum Output Short
Circuit Current (Note 7)
=
−5.00V unless otherwise specified. Boldface limits apply for T
=
V
+5V
pin12
=
(f
50)
CLK/fO
=
V
0V
pin12
=
(f
100)
Source 20 mA
Sink 3.0 mA
CLK/fO
to T
MIN
(Note 8) Limit Limit
83 dB 80 dB
; all other limits T
MAX
MF10ACN, MF10CCN,
MF10CCWM
(Note 9) (Note 10)
A
=
T
J
Logic Input Characteristics
=
Boldface limits apply for T
MIN
to T
MAX
; all other limits T
Parameter Conditions Typical Tested Design Units
+
=
=
=
(T
+5V, V =
0V −3.0 −3.0 V
LSh +
LSh +
LSh +
LSh
JMAX−TA
=
+10V, V =
+5V +2.0 +2.0 V
=
=
+5V, V =
0V +0.8 +0.8 V
=
+10V, V =
+5V +0.8 +0.8 V
)/θJAor the number given in the Absolute Maximum Ratings, whichever is lower. For this device,
CMOS Clock Min Logical “1” V Input Voltage Max Logical “0” V
Min Logical “1” V
Max Logical “0” V TTL Clock Min Logical “1” V Input Voltage Max Logical “0” V
Min Logical “1” V
Max Logical “0” V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not apply when operating the device beyond its specified operating conditions.
Note 2: When the input voltage (V to 5 mA or less. The 20 mA package input current limits the number of pins that can exceed the power supply boundaries witha5mAcurrent limit to four.
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by T allowable power dissipation at any temperature is P
=
T
125˚C, and the typical junction-to-ambient thermal resistance of the MF10ACN/CCN when board mounted is 55˚C/W. For the MF10AJ/CCJ, this number in-
JMAX
creases to 95˚C/W and for the MF10ACWM/CCWM this number is 66˚C/W. Note 4: The accuracy of the Q value is a function of the center frequency (f
istics”.
Note 5: V Note 6: For
the MF10 with a 50:1 CLK ratio and 280 µV rms for the MF10 with a 100:1 CLK ratio. Note 7: The short circuit source current is measured by forcing the output that is being tested to its maximum positive voltage swing and then shorting that output
to the negative supply. The short circuit sink current is measured by forcing the output that is being tested to its maximum negative voltage swing and then shorting that output to the positive supply. These are the worst case conditions.
Note 8: Typicals are at 25˚C and represent most likely parametric norm. Note 9: Tested limits are guaranteed to National’s AOQL (Average Outgoing Quality Level). Note 10: Design limits are guaranteed but not 100%tested. These limits are not used to calculate outgoing quality levels. Note 11: Human body model, 100 pF discharged through a 1.5 kresistor.
, and V
OS1,VOS2
±
5V supplies the dynamic range is referenced to 2.82V rms (4V peak) where the wideband noise over a 20 kHz bandwidth is typically 200 µV rms for
) at any pin exceeds the power supply rails (V
IN
D
refer to the internal offsets as discussed in the Applications Information Section 3.4.
OS3
=
T
25˚C
A
J
MF10ACN, MF10CCN,
MF10CCWM
(Note 8) Limit Limit
(Note 9) (Note 10)
−5V, +3.0 +3.0 V
=
0V, +8.0 +8.0 V
−5V, +2.0 +2.0 V
=
0V, +2.0 +2.0 V
<
IN
). This is illustrated in the curves under the heading “Typical Performance Character-
O
V−or V
>
V+) the absolute value of current at that pin should be limited
IN
, θJA, and the ambient temperature, TA. The maximum
JMAX
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Typical Performance Characteristics
Power Supply Current vs Power Supply Voltage
Negative Output Swing vs Temperature
Positive Output Voltage Swing vs Load Resistance (N/AP/HP Output)
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Positive Output Swing vs Temperature
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Negative Output Voltage Swing vs Load Resistance (N/AP/HP Output)
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Crosstalk vs Clock Frequency
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Q Deviation vs Temperature
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Q Deviation vs Temperature
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Q Deviation vs Clock Frequency
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Typical Performance Characteristics (Continued)
Q Deviation vs Clock Frequency
f
Deviation
CLK/fO
vs Clock Frequency
f
CLK/fO
vs Temperature
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f
CLK/fO
vs Clock Frequency
Deviation
Deviation
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f
Deviation
CLK/fO
vs Temperature
Deviation of f vs Nominal Q
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CLK/fO
Deviation of f vs Nominal Q
CLK/fO
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Pin Descriptions
LP(1,20), BP(2,19), N/AP/HP(3,18)
INV(4,17) The inverting input of the summing
S1(5,16) S1 is a signal input pin used in the all-
S
(6) This pin activates a switch that con-
A/B
+
V
V
+
(7),V
(8) Analog positive supply and digital posi-
A
D
(14), V
A
D
LSh(9) Level shift pin; it accommodates vari-
CLKA(10), CLKB(11)
The second order lowpass, bandpass and notch/allpass/highpass outputs. These outputs can typically sink 1.5 mAand source 3 mA. Each output typi­cally swings to within 1V of each sup­ply.
op-amp of each filter. These are high impedance inputs, but the non-inverting input is internally tied to AGND, making INV like summing junctions (low imped-
and INVBbehave
A
ance, current inputs).
pass filter configurations (see modes 4 and 5). The pin should be driven with a source impedance of less than 1 k.If S1 is not driven with a signal it should be tied to AGND (mid-supply).
nects one of the inputs of each filter’s second summer to either AGND (S tied to V−) or to the lowpass (LP) out­put (S flexibility needed for configuring the fil-
tied to V+). This offers the
A/B
A/B
ter in its various modes of operation.
tive supply. These pins are internally connected through the IC substrate and therefore V derived from the same power supply
A
+
and V
+
should be
D
source. They have been brought out separately so they can be bypassed by separate capacitors, if desired. They can be externally tied together and by­passed by a single capacitor.
(13) Analog and digital negative supplies.
The same comments as for V
+
V
apply here.
D
+
and
A
ous clock levels with dual or single supply operation. With dual
±
5V sup­plies, the MF10 can be driven with CMOS clock levels (
±
5V) and the LSh pin should be tied to the system ground. If the same supplies as above are used but only TTL clock levels, de­rived from 0V to +5V supply, are avail­able, the LSh pin should be tied to the system ground. For single supply op­eration (0V and +10V) the V
V
pins should be connected to the
D
system ground, the AGND pin should
A
be biased at +5V and the LSh pin should also be tied to the system ground for TTL clock levels. LSh should be biased at +5V for CMOS clock levels in 10V single-supply appli­cations.
Clock inputs for each switched capaci­tor filter building block. They should both be of the same level (TTL or CMOS). The level shift (LSh) pin de­scription discusses how to accommo-
date their levels. The duty cycle of the clock should be close to 50%espe­cially when clock frequencies above 200 kHz are used. This allows the maximum time for the internal op-amps to settle, which yields opti­mum filter operation.
50/100/CL(12) By tying this pin high a 50:1
clock-to-filter-center-frequency ratio is obtained. Tying this pin at mid-supplies (i.e. analog ground with dual supplies) allows the filter to operate at a 100:1 clock-to-center-frequency ratio. When the pin is tied low (i.e., negative supply with dual supplies), a simple current limiting circuit is triggered to limit the overall supply current down to about
2.5 mA. The filtering action is then aborted.
AGND(15) This is the analog ground pin. This pin
should be connected to the system ground for dual supply operation or bi­ased to mid-supply for single supply operation. For a further discussion of mid-supply biasing techniques see the Applications Information (Section 3.2). For optimum filter performance a “clean” ground must be provided.
1.0 Definition of Terms
f
: the frequency of the external clock signal applied to pin
CLK
10 or 11.
f
: center frequency of the second order function complex
O
pole pair. f MF10, and is the frequency of maximum bandpass gain. (
Figure 1
f
notch
notch outputs.
f
: the center frequency of the second order complex zero
z
pair, if any. If f observed as the frequency of a notch at the allpass output. (
Figure 10
Q: “quality factor” of the 2nd order filter. Q is measured at the bandpass outputs of the MF10 and is equal to f the −3 dB bandwidth of the 2nd order bandpass filter (
1
). The value of Q determines the shape of the 2nd order fil-
ter responses as shown in
: the quality factor of the second order complex zero pair,
Q
Z
if any. Q
written:
,
where Q
H
OBP
H
OLP
(
Figure 2
H
OHP
(
Figure 3
is measured at the bandpass outputs of the
O
)
: the frequency of minimum (ideally zero) gain at the
is different from fOand if QZis high, it can be
z
)
Figure 6
.
is related to the allpass characteristic, which is
Z
=
Q for an all-pass response.
Z
: the gain (in V/V) of the bandpass output at f=fO.
: the gain (in V/V) of the lowpass output as f→0Hz
).
: the gain (in V/V) of the highpass output as f→f
).
divided by
O
Figure
CLK
/2
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1.0 Definition of Terms (Continued)
H
: the gain (in V/V) of the notch output as f→0 Hz and as
ON
f→f
/2, when the notch filter has equal gain above and
CLK
below the center frequency ( low-frequency gain differs from the high-frequency gain, as in modes 2 and 3a (
Figure 11
ties below are used in place of H
and
Figure 4
Figure 8
.
ON
). When the
), the two quanti-
H
: the gain (in V/V) of the notch output as f→0 Hz.
ON1
: the gain (in V/V) of the notch output as f→f
H
ON2
CLK
/2.
(a)
(a)
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DS010399-7
(a)
DS010399-6
(b)
FIGURE 1. 2nd-Order Bandpass Response
DS010399-8
(b)
FIGURE 2. 2nd-Order Low-Pass Response
DS010399-9
DS010399-56
DS010399-57
DS010399-10
(b)
DS010399-58
FIGURE 3. 2nd-Order High-Pass Response
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1.0 Definition of Terms (Continued)
(a)
(a)
(a) Bandpass
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DS010399-12
(b)
FIGURE 4. 2nd-Order Notch Response
DS010399-14
(b)
FIGURE 5. 2nd-Order All-Pass Response
(b) Low Pass
DS010399-60
DS010399-61
(c) High-Pass
DS010399-50
(d) Notch
DS010399-53
FIGURE 6. Response of various 2nd-order filters as a function of Q.
Gains and center frequencies are normalized to unity.
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DS010399-51
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(e) All-Pass
DS010399-54
2.0 Modes of Operation
The MF10 is a switched capacitor (sampled data) filter. To fully describe its transfer functions, a time domain approach is appropriate. Since this is cumbersome, and since the MF10 closely approximates continuous filters, the following discussion is based on the well known frequency domain. Each MF10 can produce a full 2nd order function. See
1
for a summary of the characteristics of the various modes.
MODE 1: Notch 1, Bandpass, Lowpass Outputs:
=
(See
Figure 7
f
f
notch
=
f
center frequency of the complex pole pair
O
O
)
Table
=
quality factor of the complex pole pair BW=the −3 dB bandwidth of the bandpass output. Circuit dynamics:
=
f
center frequency of the imaginary zero pair=f
notch
MODE 1a: Non-Inverting BP, LP (See
.
O
Note: VINshould be driven from a low impedance (<1k) source.
FIGURE 7. MODE 1
DS010399-16
Figure 8
)
FIGURE 8. MODE 1a
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2.0 Modes of Operation (Continued)
MODE 2: Notch 2, Bandpass, Lowpass: f (See
Figure 9
)
notch
<
MODE 3: Highpass, Bandpass, Lowpass Outputs (See
Figure 10
f
O
)
FIGURE 9. MODE 2
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DS010399-18
2.0 Modes of Operation (Continued)
*
In Mode 3, the feedback loop is closed around the input summing amplifier; the finite GBW product of this op amp causes a slight Q enhancement. If this is a
problem, connect a small capacitor (10 pF − 100 pF) across R4 to provide some phase lead.
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FIGURE 10. MODE 3
MODE 3a: HP, BP, LP and Notch with External Op Amp
Figure 11
(See
)
MODE 4: Allpass, Bandpass, Lowpass Outputs (See
Figure 12
*
Due to the sampled data nature of the filter, a slight mismatch of fzand f occurs causing a 0.4 dB peaking around fOof the allpass filter amplitude response (which theoretically should be a straight line). If this is unacceptable, Mode 5 is recommended.
)
O
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2.0 Modes of Operation (Continued)
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FIGURE 11. MODE 3a
FIGURE 12. MODE 4
MODE 5: Numerator Complex Zeros, BP, LP
Figure 13
(See
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)
DS010399-21
MODE 6a: Single Pole, HP, LP Filter (See
Figure 14
MODE 6b: Single Pole LP Filter (Inverting and Non-Inverting) (See
Figure 15
)
)
2.0 Modes of Operation (Continued)
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FIGURE 13. MODE 5
DS010399-23
FIGURE 14. MODE 6a
TABLE 1. Summary of Modes. Realizable filter types (e.g. low-pass) denoted by asterisks.
Unless otherwise noted, gains of various filter outputs are inverting and adjustable by resistor ratios.
Mode BP LP HP N AP
1
***
(2) May need input buffer.
1a H
2
=
−Q H
OBP1
=
H
+1 high Q.
OBP2
+ 1 2 No Poor dynamics for
OLP
***
***
3
FIGURE 15. MODE 6b
Number
of
Resistors f
3No
3 Yes (above f
4 Yes Universal State-Variable
DS010399-24
Adjustable
CLK/fO
or f
/100)
CLK
CLK
Notes
/50
Filter. Best general-purpose mode.
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2.0 Modes of Operation (Continued)
Unless otherwise noted, gains of various filter outputs are inverting and adjustable by resistor ratios. (Continued)
Mode BP LP HP N AP
3a
4
5
6a 6b
TABLE 1. Summary of Modes. Realizable filter types (e.g. low-pass) denoted by asterisks.
Number
Adjustable
of
Resistors f
****
7 Yes As above, but also includes
CLK/fO
resistor-tuneable notch.
** *
** *
3 No Gives Allpass response with
=
H
OAP
4 Gives flatter allpass response
than above if R
**
3 Single pole.
2 Single pole.
Notes
−1 and H
1
3.0 Applications Information
The MF10 is a general-purpose dual second-order state variable filter whose center frequency is proportional to the frequency of the square wave applied to the clock input (f
). By connecting pin 12 to the appropriate DC voltage,
CLK
the filter center frequency f f
/100 or f
CLK
±
6%) by using a crystal clock oscillator, or can be easily var-
/50. fOcan be very accurately set (within
CLK
can be made equal to either
O
Figures 9, 10, 11, 13, 14, 15
ratio can be altered by external
CLK/fO
. The filter Q and
gain are determined by external resistors. All of the five second-order filter types can be built using ei-
ther section of the MF10. These are illustrated in through
Figure 5
related equations.
along with their transfer functions and some
Figure 6
shows the effect of Q on the
Figure 1
3.1 DESIGN EXAMPLE
In order to design a second-order filter section using the MF10, we must define the necessary values of three param­eters: f
, the filter section’s center frequency; H0, the pass-
0
band gain; and the filter’s Q. These are determined by the characteristics required of the filter being designed.
As an example, let’s assume that a system requires a fourth-order Chebyshev low-pass filter with 1 dB ripple, unity gain at DC, and 1000 Hz cutoff frequency. As the system or­der is four, it is realizable using both second-order sections of an MF10. Many filter design texts include tables that list the characteristics (f ter sections needed to synthesize a given higher-order filter.
and Q) of each of the second-order fil-
O
For the Chebyshev filter defined above, such a table yields the following characteristics:
f
0A
f
0B
=
529 Hz Q
=
993 Hz Q
=
0.785
A
=
3.559
B
For unity gain at DC, we also specify:
=
1
H
0A
=
1
H
0B
The desired clock-to-cutoff-frequency ratio for the overall fil­ter of this example is 100 and a 100 kHz clock signal is avail-
able. Note that the required center frequencies for the two second-order sections will not be obtainable with clock-to-center-frequency ratios of 50 or 100. It will be nec­essary to adjust
externally.From
Table1
, we see that Mode 3 can be used to produce a low-pass filter with resistor-adjustable center fre­quency.
For the first section, we begin the design by choosing a con­venient value for the input resistance: R lute value of the passband gain H choosing R the 50/100/CL pin is connected to mid-supply for nominal
such that: R
4A
=
−H
4A
=
20k. The abso-
1A
is made equal to 1 by
OLPA
OLPAR1A
=
100:1 clock-to-center-frequency ratio, we find R
The resistors for the second section are found in a similar fashion:
=
−2.
OLP
=
=
=
by:
0.02R
20k. If
.
4
R
2
R
1A
2A
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3.0 Applications Information
(Continued)
The complete circuit is shown in power supplies. Supply bypass capacitors are highly recommended.
FIGURE 16. Fourth-Order Chebyshev Low-Pass Filter from Example in 3.1.
Figure 16
±
5V Power Supply. 0V–5V TTL or −5V±5V CMOS Logic Levels.
for split±5V
DS010399-25
DS010399-26
FIGURE 17. Fourth-Order Chebyshev Low-Pass Filter from Example in 3.1.
Single +10V Power Supply. 0V–5V TTL Logic Levels. Input Signals
Should be Referred to Half-Supply or Applied through a Coupling Capacitor.
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3.0 Applications Information (Continued)
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(a) Resistive Divider with
(b) Voltage Regulator
Decoupling Capacitor
FIGURE 18. Three Ways of Generating V
3.2 SINGLE SUPPLY OPERATION
The MF10 can also operate with a single-ended power sup-
Figure 17
ply. power supply. V tive power supply (8V to 14V), and V nected to ground. The A single supply operation. This half-supply point should be
shows the example filter with a single-ended
+
+
and V
A
are again connected to the posi-
D
GND
and V
D
are con-
A
pin must be tied to V+/2 for
very “clean”, as any noise appearing on it will be treated as an input to the filter. It can be derived from the supply voltage with a pair of resistors and a bypass capacitor (
Figure 18a
or a low-impedance half-supply voltage can be made using a three-terminal voltage regulator or an operational amplifier (
Figure 18b
and
Figure 18c
). The passive resistor divider with a bypass capacitor is sufficient for many applications, provided that the time constant is long enough to reject any power supply noise. It is also important that the half-supply reference present a low impedance to the clock frequency, so at very low clock frequencies the regulator or op-amp ap­proaches may be preferable because they will require smaller capacitors to filter the clock frequency. The main power supply voltage should be clean (preferably regulated) and bypassed with 0.1 µF.
3.3 DYNAMIC CONSIDERATIONS
The maximum signal handling capability of the MF10, like that of any active filter, is limited by the power supply volt­ages used. The amplifiers in the MF10 are able to swing to within about 1V of the supplies, so the input signals must be kept small enough that none of the outputs will exceed these limits. If the MF10 is operating on puts will clip at about 8 V multiplied by the filter gain should therefore be less than 8V
.
p–p
±
5V,for example, the out-
. The maximum input voltage
p–p
Note that if the filter Q is high, the gain at the lowpass or highpass outputs will be much greater than the nominal filter gain (
Figure 6
10 will have a 20 dB peak in its amplitude response at f the nominal gain of the filter H will be 10. The maximum input signal at fOmust therefore be less than 800 mV supplies.
). As an example, a lowpass filter withaQof
is equal to 1, the gain at f
OLP
when the circuit is operated on±5V
p–p
O
Also note that one output can have a reasonable small volt­age on it while another is saturated. This is most likely for a circuit such as the notch in Mode 1 ( put will be very small at f a large signal to the input. However, the bandpass will have its maximum gain at f put clips, the performance at the other outputs will be de-
O
and can clip if overdriven. If one out-
O
Figure 7
). The notch out-
, so it might appear safe to apply
graded, so avoid overdriving any filter section, even ones
.If
DS010399-28
(c) Operational Amplifier
with Divider
+
/2 for Single-Supply Operation
whose outputs are not being directly used. Accompanying
Figure 7
through
Figure 15
are equations labeled “circuit dy­namics”, which relate the Q and the gains at the various out­puts. These should be consulted to determine peak circuit gains and maximum allowable signals for a given applica­tion.
3.4 OFFSET VOLTAGE
The MF10’s switched capacitor integrators have a higher equivalent input offset voltage than would be found in a typi-
),
cal continuous-time active filter integrator. an equivalent circuit of the MF10 from which the output DC offsets can be calculated. Typical values for these offsets with S
V V V When S
DC offset at the BP output is equal to the input offset of the lowpass integrator (V depend on the mode of operation and the resistor ratios, as
=
os1
=
os2
=
os3
tied to V+are:
A/B
opamp offset
−150 mV
−70 mV is tied to V−,V
A/B
=
±
5mV
@
50:1: −300 mV@100:1
@
50:1: −140 mV@100:1
will approximately halve. The
os2
). The offsets at the other outputs
os3
described in the following expressions.
O
Figure 19
DS010399-29
shows
www.national.com 16
3.0 Applications Information
(Continued)
FIGURE 19. MF10 Offset Voltage Sources
DS010399-31
FIGURE 20. Method for Trimming V
OS
DS010399-30
www.national.com17
3.0 Applications Information
(Continued)
For most applications, the outputs are AC coupled and DC offsets are not bothersome unless large signals are applied to the filter input. However, larger offset voltages will cause clipping to occur at lower AC signal levels, and clipping at any of the outputs will cause gain nonlinearities and will change f come excessively large if R2 and R4 are used to make f
CLK/fO
3.5 SAMPLED DATA SYSTEM CONSIDERATIONS
The MF10 is a sampled data filter, and as such, differs in many ways from conventional continuous-time filters. An im­portant characteristic of sampled-data systems is their effect on signals at frequencies greater than one-half the sampling frequency. (The MF10’s sampling frequency is the same as its clock frequency.) If a signal with a frequency greater than one-half the sampling frequency is applied to the input of a sampled data system, it will be “reflected” to a frequency less than one-half the sampling frequency. Thus, an input signal whose frequency is f
and Q. When operating in Mode 3, offsets can be-
O
significantly higher than the nominal value, especially
=
250 with pin 12
CLK/fO
Figure 20
, which will have varying effects on the different
OS1
in modes 1a and 3, for example).
OS(BP)
/2 + 100 Hz will cause the system to re-
s
. This allows adjust-
spond as though the input frequency was f phenomenon is known as “aliasing”, and can be reduced or
/2 − 100 Hz. This
s
eliminated by limiting the input signal spectrum to less than f
/2. This may in some cases require the use of a
s
bandwidth-limiting filter ahead of the MF10 to limit the input spectrum. However, since the clock frequency is much higher than the center frequency,this will often not be neces­sary.
Another characteristic of sampled-data circuits is that the output signal changes amplitude once every sampling pe­riod, resulting in “steps” in the output voltage which occur at the clock rate (
Figure 21
). If necessary, these can be “smoothed” with a simple R–C low-pass filter at the MF10 output.
The ratio of f affect performance. A ratio of 100:1 will reduce any aliasing
to fC(normally either 50:1 or 100:1) will also
CLK
problems and is usually recommended for wideband input signals. In noise sensitive applications, however, a ratio of 50:1 may be better as it will result in 3 dB lower output noise. The 50:1 ratio also results in lower DC offset voltages, as discussed in Section 3.4.
The accuracy of the f of Q. This is illustrated in the curves under the heading “Typi-
ratio is dependent on the value
CLK/fO
cal Performance Characteristics”. As Q is changed, the true value of the ratio changes as well. Unless the Q is low, the error in f cific application, use a mode that allows adjustment of the ra-
will be small. If the error is too large for a spe-
CLK/fO
tio with external resistors. It should also be noted that the product of Q and f
limited to 300 kHz when f 5 kHz.
<
5 kHz, and to 200 kHz for f
O
should be
O
O
>
FIGURE 21. The Sampled-Data Output Waveform
www.national.com 18
DS010399-32
Connection Diagram
Surface Mount and
Dual-In-Line Package
DS010399-4
Top View
Order Number MF10CCWM
See NS Package Number M20B
Order Number MF10ACN or MF10CCN
See NS Package Number N20A
www.national.com19
Physical Dimensions inches (millimeters) unless otherwise noted
Molded Package (Small Outline) (M)
Order Number MF10ACWM or MF10CCWM
NS Package Number M20B
20-Lead Molded Dual-In-Line Package (N)
Order Number MF10ACN or MF10CCN
NS Package Number N20A
www.national.com 20
Notes
MF10 Universal Monolithic Dual Switched Capacitor Filter
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NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
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labeling, can be reasonably expected to result in a significant injury to the user.
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www.national.com
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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