NSC LP2902MX, LP2902M, LP2902N Datasheet

LP2902/LP324 Micropower Quad Operational Amplifier
General Description
The LP324 series consists of four independent, high gain in­ternally compensated micropower operational amplifiers. These amplifiers are specially suited for operation in battery systems while maintaining goodinputspecifications,and ex­tremely low supply current drain. In addition, the LP324 has an input common mode range, and output source range which includes ground, making it ideal in single supply appli­cations.
These amplifiers are ideal in applications which include por­table instrumentation, battery backup equipment, and other circuits which require good DC performance and low supply current.
Features
n Low supply current: 125 µA (max) n Low offset voltage: 2 mV (max) n Low input bias current: 4 nA (max) n Input common mode to GND n Interfaces to CMOS logic n Wide supply range: 3V
<
V
+
<
32V
n Small Outline Package available n Pin-for-pin compatible with LM324
Connection Diagram Simplified Schematic
Dual-In-Line (N) and SO (M)
DS008562-1
Order Number LP324M or LP2902M
See NS Package Number M14A
Order Number LP324N or LP2902N
See NS Package Number N14A
DS008562-2
September 1999
LP2902/LP324 Micropower Quad Operational Amplifier
© 1999 National Semiconductor Corporation DS008562 www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Supply Voltage 32V or
±
16V
LP2902 26V or
±
13V
Differential Input Voltage 32V
LP2902 26V
Input Voltage (Note 2) −0.3V to 32V
LP2902 −0.3V to 26V
Output Short-Circuit to GND Continuous
(One Amplifier) (Note 3)
V
+
15V and T
A
=
25˚C
ESD Susceptibility (Note 10)
±
500V
Operating Conditions
Package
NM
Power Dissipation 500 mW 500 mW
(Note 4)
T
j
Max 150˚C 150˚C
θ
ja
90˚C/W 140˚C/W Operating Temp. Range (Note 5) (Note 5) Storage Temp. Range −65˚C T 150˚C Soldering
Information (10 sec.) 300˚C 260˚C Vapor Phase (60 sec.) 215˚C Infrared (15 sec.) 220˚C
Electrical Characteristics (Note 6)
LP2902 (Note 9) LP324
Symbol Parameter Conditions Tested Design Tested Design Units
Typ Limit Limit Typ Limit Limit Limits
(Note 7) (Note 8) (Note 7) (Note 8)
V
os
Input Offset 2 4 10 24 9mV Voltage (Max)
I
b
Input Bias 2 20 40 210 20 nA Current (Max)
I
os
Input Offset 0.5 4 8 0.2 2 4 nA Current (Max)
A
vol
Voltage R
L
=
10k 70 40 30 100 50 40 V/mV
Gain to GND (Min)
V
+
=
30V
CMRR Common V
+
=
30V 90 80 75 90 80 75 dB
Mode Rej. 0V V
cm
(Min)
Ratio V
cm
<
V+− 1.5
PSRR Power V
+
=
5V to 30V 90 80 75 90 80 75 dB Supply Rej. (Min) Ratio
I
s
Supply R
L
=
85 150 250 85 150 250 µA
Current (Max)
V
o
Output I
L
=
350 µA 3.6 3.4 V
+
−1.9V 3.6 3.4 V+−1.9V V
Voltage to GND. (Min) Swing V
cm
=
0V
I
L
=
350 µA 0.7 0.8 1.0 0.7 0.8 1.0 V
to V
+
(Max)
V
cm
=
0V
I
out
Output V
o
=
3V 10 7 4 10 7 4 mA
Source Source V
in
(diff)=1V (Min)
Current
I
out
Output V
o
=
1.5V 5 4 3 54 3mA
Sink Sink V
in
(diff)=1V (Min)
Current
I
out
Output V
o
=
1.5V 4 2 1 42 1mA
Sink Sink V
cm
=
0V (Min)
Current
I
source
Output Vin(diff)=1V 20 25 35 20 25 35 mA Short to GND 35 35 (Max)
I
sink
Output Vin(diff)=1V 15 30 45 15 30 45 mA Short to V
+
(Max)
V
os
10 10 µV/C˚
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Electrical Characteristics (Note 6) (Continued)
LP2902 (Note 9) LP324
Symbol Parameter Conditions Tested Design Tested Design Units
Typ Limit Limit Typ Limit Limit Limits
(Note 7) (Note 8) (Note 7) (Note 8) Drift I
os
10 10 pA/C˚ Drift GBW Gain
Bandwidth 100 100 KHz Product
S
r
Slew Rate 50 50 V/mS
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits.
Note 2: The input voltage is not allowed to go more than −0.3V below V
(GND) as this will turn on a parasitic transistor causing large currents to flow through the
device. Note 3: Short circuits from the output to GND can cause excessive heating and eventual destruction. The maximum sourcing output current is approximately 30 mA
independent of the magnitude of V
+
. At values of supply voltage in excess of 15 VDC, continuous short-circuit to GND can exceed the power dissipation ratings (par-
ticularly at elevated temperatures) and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers. Note 4: For operation at elevated temperatures, these devices must be derated based on a thermal resistance of θ
ja
and Tjmax. T
j
=
T
A
+ θjaPD.
Note 5: The LP2902 may be operated from −40˚C T
A
+85˚C, and the LP324 may be operated from 0˚C TA≤ +70˚C.
Note 6: Boldface numbers apply at temperature extremes. All other numbers apply only at T
A
=
T
j
=
25˚C, V
+
=
5V,V
cm
=
V/2, and R
L
=
100k connected to GND
unless otherwise specified.
Note 7: Guaranteed and 100%production tested. Note 8: Guaranteed (but not 100%production tested) over the operating supply voltage range (3.0V to 32V for the LP324, LP324, and 3.0V to 26V for the LP2902),
and the common mode range (0V to V
+
−1.5V), unless otherwise specified. These limits are not used to calculate outgoing quality levels.
Note 9: The LP2902 operating supply range is 3V to 26V, and is not tested above 26V. Note 10: The test circuit used consists of the human body model of 100 pF in series with 1500.
Typical Performance Curves
Input Voltage Range
DS008562-21
Input Current
DS008562-22
Supply Current
DS008562-23
Voltage Gain
DS008562-24
Open Loop
Frequency Response
DS008562-25
Power Supply
Rejection Ratio
DS008562-26
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