NSC LMH6702MFX, LMH6702MF, LMH6702MA, LMH6702MAX Datasheet

LMH6702
Ultra Low Distortion, Wideband Op Amp

General Description

The LMH6702 is a very wideband, DC coupled monolithic
operational amplifier designed specifically for wide dynamic
range systems requiring exceptional signal fidelity. Benefit­ing from National’s current feedback architecture, the
LMH6702 offers unity gain stability at exceptional speed
without need for external compensation.

With its 720MHz bandwidth (A

V

= 2V/V, VO=2VPP), 10-bit

distortion levels through 60MHz (R

L

= 100Ω), 1.83nV/
input referred noise and 12.5mA supply current, the
LMH6702 is the ideal driver or buffer for high-speed flash
A/D and D/A converters.

Wide dynamic range systems such as radar and communi­cation receivers, requiring a wideband amplifier offering ex­ceptional signal purity, will find the LMH6702’s low input
referred noise and low harmonic and intermodulation distor­tion make it an attractive high speed solution.

The LMH6702 is constructed using National’s VIP10

™

com­plimentary bipolar process and National’s proven current
feedback architecture. The LMH6702 is available in SOIC
and SOT23-5 packages.

Features

VS=±5V, TA= 25˚C, AV= +2V/V, RL= 100Ω,V

OUT

=2VPP,

Typical unless Noted:
n 2

nd/3rd

Harmonics (5MHz, SOT23-5) −100/−96dBc

n −3dB Bandwidth (V

OUT

=2VPP) 720MHz

n Low noise 1.83nV/
n Fast settling to 0.1% 13.4ns
n Fast slew rate 3100V/µs
n Supply current 12.5mA
n Output current 80mA
n Low Intermodulation Distortion (75MHz) −67dBc
n Improved Replacement for CLC409 and CLC449

Applications

n Flash A/D driver
n D/A transimpedance buffer
n Wide dynamic range IF amp
n Radar/communication receivers
n Line driver
n High resolution video

Inverting Frequency Response Harmonic Distortion vs. Load and Frequency

20039002

20039007

June 2003

LMH6702 Ultra Low Distortion, Wideband Op Amp

© 2003 National Semiconductor Corporation DS200390 www.national.com

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

V

S

±

6.75V

I

OUT

(Note 3)

Common Mode Input Voltage V

−

to V

+

Maximum Junction Temperature +150˚C

Storage Temperature Range −65˚C to +150˚C

Soldering Information

Infrared or Convection (20 sec.) 235˚C

Wave Soldering (10 sec.) 260˚C

ESD Tolerance (Note 4)

Human Body Model 2000V

Machine Model 200V

Storage Temperature Range −65˚C to +150˚C

Operating Ratings (Note 1)

Thermal Resistance

Package (θ

JC

)(θJA)

8-Pin SOIC 75˚C/W 160˚C/W

5-Pin SOT23 120˚C/W 187˚C/W

Operating Temperature −40˚C to +85˚C

Nominal Supply Voltage

±

5V to±6V

Electrical Characteristics (Note 2)

AV= +2, VS=±5V, RL= 100Ω,RF= 237Ω; unless specified

Symbol Parameter Conditions Min

(Note 6)

Typ

(Note 6)

Max

(Note 6)

Units

Frequency Domain Performance

SSBW

LG

-3dB Bandwidth V

OUT

=2V

PP

720

MHzLSBW

LG

V

OUT

=4V

PP

480

SSBW

HG

V

OUT

=2VPP,AV= +10 140

GF

0.1dB

0.1dB Gain Flatness V

OUT

=2V

PP

120 MHz

LPD Linear Phase Deviation DC to 100MHz 0.09 deg

DG Differential Gain R

L

=150Ω, 3.58MHz/4.43MHz 0.024/0.021 %

DP Differential Phase R

L

= 150Ω, 3.58MHz/4.43MHz 0.004/0.007 deg

Time Domain Response

TRS/TRL Rise and Fall Time 2V Step 0.87/0.77 ns

6V Step 1.70/1.70 ns

OS Overshoot 2V Step 0 %

SR Slew Rate 6V

PP

, 40% to 60% (Note 5) 3100 V/µs

T

s

Settling Time to 0.1% 2V Step 13.4 ns

Distortion And Noise Response

HD2L 2

nd

Harmonic Distortion 2VPP, 5MHz (Note 9)

(SOT23-5/SOIC)

−100/ −87 dBc

HD2 2VPP, 20MHz (Note 9)

(SOT23-5/SOIC)

−79/ −72 dBc

HD2H 2V

PP

, 60MHz (Note 9)

(SOT23-5/SOIC)

−63/ −64 dBc

HD3L 3

rd

Harmonic Distortion 2VPP, 5MHz (Note 9)

(SOT23-5/SOIC)

−96/ −98 dBc

HD3 2VPP, 20MHz (Note 9)

(SOT23-5/SOIC)

−88/ −82 dBc

HD3H 2V

PP

, 60MHz (Note 9)

(SOT23-5/SOIC)

−70/ −65 dBc

OIM3 IMD 75MHz, PO= 10dBm/ tone −67 dBc

V

N

Input Referred Voltage Noise

>

1MHz 1.83 nV/

I

N

Input Referred Inverting Noise
Current

>

1MHz 18.5 pA/

I

NN

Input Referred Non-Inverting
Noise Current

>

1MHz 3.0 pA/

SNF Total Input Noise Floor

>

1MHz −158 dBm

1Hz

INV Total Integrated Input Noise 1MHz to 150MHz 35 µV

LMH6702

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Electrical Characteristics (Note 2) (Continued)

AV= +2, VS=±5V, RL= 100Ω,RF= 237Ω; unless specified

Symbol Parameter Conditions Min

(Note 6)

Typ

(Note 6)

Max

(Note 6)

Units

Static, DC Performance

V

IO

Input Offset Voltage

±

1.0

±

4.5

±

6.0

mV

DV

IO

Input Offset Voltage Average
Drift

(Note 8) −13 µV/˚C

I

BN

Input Bias Current Non-Inverting (Note 7) −6

±

15

±

21

µA

DI

BN

Input Bias Current Average Drift Non-Inverting (Note 8) +40 nA/˚C

I

BI

Input Bias Current Inverting (Note 7) −8

±

30

±

34

µA

DI

BI

Input Bias Current Average Drift Inverting (Note 8) −10 nA/˚C

PSRR Power Supply Rejection Ratio DC 47

45

52 dB

CMRR Common Mode Rejection Ration DC 45

44

48 dB

I

CC

Supply Current RL=

∞

11.0

10.0

12.5 16.1

17.5

mA

Miscellaneous Performance

R

IN

Input Resistance Non-Inverting 1.4 MΩ

C

IN

Input Capacitance Non-Inverting 1.6 pF

R

OUT

Output Resistance Closed Loop 30 mΩ

V

OL

Output Voltage Range RL= 100Ω

±

3.3

±

3.2

±

3.5 V

CMIR Input Voltage Range Common Mode

±

1.9

±

2.2 V

I

O

Output Current 50 80 mA

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications, see the Electrical Characteristics tables.

Note 2: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that T

J=TA

. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T

J

>

TA.

Min/Max ratings are based on production testing unless otherwise specified.

Note 3: The maximum output current (I

OUT

) is determined by device power dissipation limitations.

Note 4: Human body model: 1.5kΩ in series with 100pF. Machine model: 0Ω in series with 200pF.

Note 5: Slew Rate is the average of the rising and falling edges.

Note 6: Typical numbers are the most likely parametric norm. Bold numbers refer to over temperature limits.

Note 7: Negative input current implies current flowing out of the device.

Note 8: Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.

Note 9: Harmonic distortion is strongly influenced by package type (SOT23-5 or SOIC). See Application Note section under "Harmonic Distortion" for more

information.

LMH6702

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Connection Diagrams

8-Pin SOIC 5-Pin SOT23

20039024

Top View

20039025

Top View

Ordering Information

Package Part Number Package Marking Transport Media NSC Drawing

8-pin SOIC LMH6702MA LMH6702MA 95 Units/Rail

M08A

LMH6702MAX 2.5k Units Tape and Reel

5-Pin SOT23 LMH6702MF A83A 1k Units Tape and Reel MF05A

LMH6702MFX 3k Units Tape and Reel

LMH6702

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