NSC LM709CN, LM709AJ-883 Datasheet

TL/H/11477

LM709 Operational Amplifier

February 1995

LM709
Operational Amplifier

General Description

The LM709 series is a monolithic operational amplifier in­tended for general-purpose applications. Operation is com­pletely specified over the range of voltages commonly used
for these devices. The design, in addition to providing high
gain, minimizes both offset voltage and bias currents. Fur­ther, the class-B output stage gives a large output capability
with minimum power drain.

External components are used to frequency compensate
the amplifier. Although the unity-gain compensation network
specified will make the amplifier unconditionally stable in all
feedback configurations, compensation can be tailored to
optimize high-frequency performance for any gain setting.

The LM709C is the commercial-industrial version of the
LM709. It is identical to the LM709 except that it is specified
for operation from 0

§

Ctoa70§C.

Connection Diagrams

Metal Can Package

TL/H/11477– 4

Order Number LM709AH, LM709H or LM709CH

See NS Package Number H08C

Dual-In-Line Package

TL/H/11477– 6

Order Number LM709CN-8

See NS Package Number N08E

Dual-In-Line Package

TL/H/11477– 5

Order Number LM709CN

See NS Package Number N14A

C

1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

Absolute Maximum Ratings (Note 3)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Supply Voltage

LM709/LM709A/LM709C

g

18V

Power Dissipation (Note 1)

LM709/LM709A 300 mW
LM709C 250 mW

Differential Input Voltage

LM709/LM709A/LM709C

g

5V

Input Voltage

LM709/LM709A/LM709C

g

10V

Output Short-Circuit Duration (T

A

ea

25§C)

LM709/LM709A/LM709C 5 seconds

Storage Temperature Range

LM709/LM709A/LM709C

b

65§Ctoa150§C

Lead Temperature (Soldering, 10 sec.)

LM709/LM709A/LM709C 300

§

C

Operating Ratings (Note 3)

Junction Temperature Range (Note 1)

LM709/LM709A

b

55§Ctoa150§C

LM709C 0

§

Ctoa100§C

Thermal Resistance (iJA)

H Package 150

§

C/W, (iJC)45§C/W

8-Pin N Package 134

§

C/W

14-Pin N Package 109

§

C/W

Electrical Characteristics (Note 2)

Parameter Conditions

LM709A LM709 LM709C

Units

Min Typ Max Min Typ Max Min Typ Max

Input Offset Voltage T

A

e

25§C, R

S

s

10 kX 0.6 2.0 1.0 5.0 2.0 7.5 mV

Input Bias Current T

A

e

25§C 100 200 200 500 300 1500 nA

Input Offset Current T

A

e

25§C 10 50 50 200 100 500 nA

Input Resistance T

A

e

25§C 350 700 150 400 50 250 kX

Output Resistance T

A

e

25§C 150 150 150 X

Supply Current T

A

e

25§C, V

S

e

g

15V 2.5 3.6 2.6 5.5 2.6 6.6 mA

Transient Response V

IN

e

20 mV, C

L

s

100 pF

Risetime T

A

e

25§C 1.5 0.3 1.0 0.3 1.0 ms

Overshoot 30 10 30 10 30 %

Slew Rate T

A

e

25§C 0.25 0.25 0.25 V/ms

Input Offset Voltage R

S

s

10 kX 3.0 6.0 10 mV

Average Temperature R

S

e

50X T

A

e

25§CtoT

MAX

1.8 10 3.0 6.0

Coefficient of T

A

e

25§CtoT

MIN

1.8 10 6.0 12
mV/

§

C

Input Offset Voltage R

S

e

10 kX T

A

e

25§CtoT

MAX

2.0 15

T

A

e

25§CtoT

MIN

4.8 25

Large Signal V

S

e

g

15V, R

L

t

2kX

25 70 25 45 70 15 45 V/mV

Voltage Gain V

OUT

e

g

10V

Output Voltage Swing V

S

e

g

15V, R

L

e

10 kX

g12g

14

g12g

14

g12g

14

V

V

S

e

g

15V, R

L

e

2kX

g10g

13

g10g

13

g10g

13

Input Voltage Range V

S

e

g

15V

g

8

g8g

10

g8g

10 V

Common-Mode R

S

s

10 kX

80 110 70 90 65 90 dB

Rejection Ratio

Supply Voltage R

S

s

10 kX

40 100 25 150 25 200 mV/V

Rejection Ratio

Input Offset Current T

A

e

T

MAX

3.5 50 20 200 75 400

nA

T

A

e

T

MIN

40 250 100 500 125 750

Input Bias Current T

A

e

T

MIN

0.3 0.6 0.5 1.5 0.36 2.0 mA

Input Resistance T

A

e

T

MIN

85 170 40 100 50 250 kX

Note 1: For operating at elevated temperatures, the device must be derated based on a 150§C maximum junction temperature for LM709/LM709A and 100§C
maximum for L709C. For operating at elevated temperatures, the device must be derated based on thermal resistance i

JA,TJ(MAX)

and TA.

Note 2: These specifications apply for

b

55§CsT

A

s

a

125§C for the LM709/LM709A and 0§CsT

A

s

a

70§C for the LM709C with the following conditions:

g

9VsV

S

s

g

15V, C1e5000 pF, R1e1.5 kX,C2e200 pF and R2e51X.

Note 3: Absolute Maximum Ratings indicate limits which if exceeded may result in damage. Operating Ratings are conditions where the device is expected to be
functional but not necessarily within the guaranteed performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics.

2

Schematic Diagram**

TL/H/11477– 1

Typical Applications**

Unity Gain Inverting Amplifier

TL/H/11477– 2

FET Operational Amplifier

TL/H/11477– 3

Voltage Follower

TL/H/11477– 7

*To be used with any capacitive loading on output.

**Pin connections shown are for metal can package.

²

Should be equal to DC source resistance on input.

Offset Balancing Circuit

TL/H/11477– 8

3