NSC LM612AMJ-883, LM612AIN Datasheet

TL/H/11058

LM612 Dual-Channel Comparator and Reference

February 1995

LM612
Dual-Channel Comparator and Reference

General Description

The dual-channel comparator consists of two individual
comparators, having an input voltage range that extends
down to the negative supply voltage V

b

. The common
open-collector output can be driven low by either half of the
LM612. This configuration makes the LM612 ideal for use
as a window comparator. The input stages of the compara­tor have lateral PNP input transistors which maintain low
input currents for large differential input voltages and swings
above V

a

.

The 1.2V voltage reference, referred to the Vbterminal, is a
two-terminal shunt-type band-gap similar to the LM185-1.2
series, with voltage accuracy of

g

0.6% available. The refer­ence features operation over a shunt current range of 17 mA
to 20 mA, low dynamic impedance, and broad capacitive
load range.

As a member of National’s Super-Block

TM

family, the
LM612 is a space-saving monolithic alternative to a multi­chip solution, offering a high level of integration without sac­rificing performance.

Features

COMPARATORS

Y

Low operating current 300 mA

Y

Wide supply voltage range 4V to 36V

Y

Open-collector outputs

Y

Input common-mode range Vbto (V

a

b

1.8V)

Y

Wide differential input voltage

g

36V

REFERENCE

Y

Fixed output voltage 1.24V

Y

Tight initial tolerance available

g

0.6% (25§C)

Y

Wide operating current range 17 mAto20mA

Y

Tolerant of load capacitance

Applications

Y

Voltage window comparator

Y

Power supply voltage monitor

Y

Dual-channel fault monitor

Connection Diagram

TL/H/11058– 1

Top View

Ordering Information

For information about surface-mount packaging of this device, please contact the Analog Product Marketing group at
National Semiconductor Corporation headquarters.

Tolerances

Reference

Temperature Range

Package Package

Number

NSC

Military Industrial

b

55§CsT

J

s

a

125§C

b

40§CsT

J

a

85§C

g

0.6% at 25§C,
LM612AMN LM612AIN

8-Pin

N08E

80 ppm/

§

C Max Molded DIP

LM612AMJ/883 8-Pin

J08A

(Note 13) Ceramic DIP

g

2.0% at 25§C,

LM612MN LM612IN

8-Pin

N08E

150 ppm/

§

C Max Molded DIP

LM612IM

8-Pin Narrow

M08A

Surface Mount

Super-BlockTMis a trademark of National Semiconductor Corporation.

C

1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Voltage on Any Pin Except V

R

(referred to Vbpin)
(Note 2) 36V (Max)
(Note 3)

b

0.3V (Min)

Current through Any Input Pin and VRPin

g

20 mA

Differential Input Voltage

g

36V

Output Short-Circuit Duration (Note 4)

Storage Temperature Range

b

65§CsT

J

s

a

150§C

Maximum Junction Temperature 150§C

Thermal Resistance, Junction-to-Ambient (Note 5)

N Package 100

§

C/W

Soldering Information

N Package

Soldering (10 seconds) 260

§

C

ESD Tolerance (Note 6)

g

1kV

Operating Temperature Range

LM612AI, LM612I

b

40§CsT

J

s

a

85§C

LM612AM, LM612M

b

55§CsT

J

s

a

125§C

Electrical Characteristics These specifications apply for V

b

e

GNDe0V, V

a

e

5V, V

CM

e

V

OUT

e

Va/2,

I

R

e

100 mA, unless otherwise specified. Limits in standard typeface are for T

J

e

25§C; limits in boldface type apply over the

Operating Temperature Range.

Symbol Parameter Conditions

(Note 7)

Typical

LM612AM LM612M

Units

LM612AI LM612I

Limits Limits

(Note 8) (Note 8)

COMPARATORS

I

S

Total Supply Current VaCurrent, R

LOAD

e %

, 150 250 250 mA Max

3V

s

V

a

s

36V 170 300 300 mA Max

V

OS

Offset Voltage over 4VsV

a

s

36V, R

L

e

15 kX 1.0 3.0 5.0 mV Max

V

a

Range 2.0 6.0 7.0 mV Max

V

OS

Offset Voltage over 0VsV

CM

s

(V

a

b

1.8V) 1.0 3.0 5.0 mV Max

V

CM

Range V

a

e

30V, R

L

e

15 kX 1.5 6.0 7.0 mV Max

DV

OS

DT

Average Offset Voltage

15 mV/

§

C

Drift

I

B

Input Bias Current 5 25 35 nA Max

83040nA Max

I

OS

Input Offset Current 0.2 4 4 nA Max

0.3 5 5 nA Max

A

V

Voltage Gain R

L

e

10 kX to 36V, 500 50 50 V/mV Min

2V

s

V

OUT

s

27V 100 V/mV

t

R

Large Signal Response V

a

IN

e

1.4V, V

b

IN

e

TTL 1.5 ms

Time Swing, R

L

e

5.1 kX 2.0 ms

I

SINK

Output Sink Current V

a

IN

e

0V, V

b

IN

e

1V, 20 10 10 mA Min

V

OUT

e

1.5V 13 8 8 mA Min

V

OUT

e

0.4V 2.8 1.0 0.8 mA Min

2.4 0.5 0.5 mA Min

I

L

Output Leakage Current V

a

IN

e

1V, V

b

IN

e

0V, 0.1 10 10 mA Max

V

OUT

e

36V 0.2 mA

2

Electrical Characteristics These specifications apply for V

b

e

GNDe0V, V

a

e

5V, V

CM

e

V

OUT

e

Va/2,

I

R

e

100 mA, unless otherwise specified. Limits in standard typeface are for T

J

e

25§C; limits in boldface type apply over the

Operating Temperature Range. (Continued)

Symbol Parameter Conditions

(Note 7)

Typical

LM612AM LM612M

Units

LM612AI LM612I

Limits Limits

(Note 8) (Note 8)

VOLTAGE REFERENCE (Note 9)

V

R

Reference Voltage 1.244 1.2365 1.2191 V Min

1.2515 1.2689 V Max

(

g

0.6%) (g2%)

DV

R

DT

Average Drift with (Note 10)

18 80 150

ppm/

§

C

Temperature Max

DV

R

kH

Average Drift with T

J

e

40§C 400 ppm/kH

Time T

J

e

150§C 1000 ppm/kH

DV

R

DT

J

Hysteresis (Note 11)

3.2 mV/

§

C

DV

R

DI

R

VRChange with V

R[100 mA

]

b

V

R[17 mA

]

0.05 1 1 mV Max

Current 0.1 1.1 1.1 mV Max

V

R[10 mA

]

b

V

R[100 mA

]

1.5 5 5 mV Max

(Note 12) 2.0 5.5 5.5 mV Max

R Resistance DV

R[10 mA to 0.1 mA

]

/9.9 mA 0.2 0.56 0.56 X Max

DV

R[100 mAto17mA

]

/83 mA 0.6 13 13 X Max

DV

R

DV

a

VRChange with V

R[Vae5V

]

b

V

R[Vae36V

]

0.1 1.2 1.2 mV Max

V

a

Change 0.1 1.3 1.3 mV Max

V

R[Vae5V

]

b

V

R[Vae3V

]

0.01 1 1 mV Max

0.01 1.5 1.5 mV Max

e

n

Voltage Noise BWe10 Hz to 10 kHz 30 mV

RMS

Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the
device beyond its rated operating conditions.

Note 2: Input voltage above V

a

is not allowed. As long as one input pin voltage remains inside the common-mode range, the comparator will deliver the correct

output.

Note 3: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below
V

b

, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined

and unpredictable when any parasitic diode or transistor is conducting.

Note 4: Shorting the Output to V

b

will not cause power dissipation, so it may be continuous. However, shorting the Output to any more positive voltage (including

V

a

), will cause 80 mA (typ.) to be drawn through the output transistor. This current multiplied by the applied voltage is the power dissipation in the output transistor.

If this total power causes the junction temperature to exceed 150

§

C, degraded reliability or destruction of the device may occur. To determine junction temperature,

see Note 5.

Note 5: Junction temperature may be calculated using T

J

e

T

A

a

PDiJA. The given thermal resistance is worst-case for packages in sockets in still air. For

packages soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal i

JA

is 90§C/W for the N package.

Note 6: Human body model, 100 pF discharged through a 1.5 kX resistor.

Note 7: Typical values in standard typeface are for T

J

e

25§C; values in boldface type apply for the full operating temperature range. These values represent the

most likely parametric norm.

Note 8: All limits are guaranteed for T

J

e

25§C (standard type face) or over the full operating temperature range (bold type face).

Note 9: V

R

is the reference output voltage, nominally 1.24V.

Note 10: Average reference drift is calculated from the measurement of the reference voltage at 25

§

C and at the temperature extremes. The drift, in ppm/§C, is

10

6

#

DVR/V

R[25§C

]

#

DTJ, where DVRis the lowest value subtracted from the highest, V

R[25§C

]

is the value at 25§C, and DTJis the temperature range. This

parameter is guaranteed by design and sample testing.

Note 11: Hysteresis is the change in V

R

caused by a change in TJ, after the reference has been ‘‘dehysterized’’. To dehysterize the reference; that is minimize the

hysteresis to the typical value, its junction temperature should be cycled in the following pattern, spiralling in toward 25

§

C: 25§C, 85§C,b40§C, 70§C, 0§C, 25§C.

Note 12: Low contact resistance is required for accurate measurement.

Note 13: A military RETS 612AMX electrical test specification is available on request. The military screened parts can also be procured as a Standard Military

Drawing.

3