NSC LM611IM, LM611CMX, LM611CM, LM611IMX, LM611AMJ-883 Datasheet

LM611
Operational Amplifier and Adjustable Reference

General Description

The LM611 consists of a single-supply op-amp and a pro­grammable voltage reference in one space saving 8-pin
package. The op-amp out-performs most single-supply
op-amps by providing higher speed and bandwidth along
with low supply current. This device was specifically de­signed to lower cost and board space requirements in trans­ducer, test, measurement and data acquisition systems.

Combining a stable voltage reference with a wide output
swing op-amp makes the LM611 ideal for single supply
transducers, signal conditioning and bridge driving where
large common-modesignalsare common. The voltage refer­ence consists of a reliable band-gap design that maintains
low dynamic output impedance (1Ω typical), excellent initial
tolerance (0.6%), and the ability to be programmed from

1.2V to 6.3V via two external resistors. The voltage refer­ence is very stable even when driving large capacitive loads,
as are commonly encountered in CMOS data acquisition
systems.

As a member of National’s Super-Block

™

family, the LM611
is a space-saving monolithic alternative to a multi-chip solu­tion, offering a high level of integration without sacrificing
performance.

Features

OP AMP

n Low operating current: 300 µA (op amp)
n Wide supply voltage range: 4V to 36V
n Wide common-mode range: V

−

to (V+−1.8V)

n Wide differential input voltage:

±

36V

n Available in low cost 8-pin DIP
n Available in plastic package rated for Military

Temperature Range Operation

REFERENCE

n Adjustable output voltage: 1.2V to 6.3V
n Tight initial tolerance available:

±

0.6

%

n Wide operating current range: 17 µA to 20 mA
n Reference floats above ground
n Tolerant of load capacitance

Applications

n Transducer bridge driver
n Process and Mass Flow Control systems
n Power supply voltage monitor
n Buffered voltage references for A/D’s

Connection Diagrams

Super-Block™is a trademark of National Semiconductor Corporation.

DS009221-1

DS009221-2

May 1998

LM611 Operational Amplifier and Adjustable Reference

© 1999 National Semiconductor Corporation DS009221 www.national.com

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Voltage on Any Pins Except V

R

(referred to V−pin) 36V (Max)
(Note 2) −0.3V (Min)

Current through Any Input Pin and

V

R

Pin

±

20 mA

Differential Input Voltage

Military and Industrial

±

36V

Commercial

±

32V

Storage Temperature Range −65˚C≤T

J

≤+150˚C

Maximum Junction Temperature 150˚C

Thermal Resistance, Junction-to-Ambient (Note 3)

N Package 100˚C/W
M Package 150˚C/W

Soldering Information Soldering (10 seconds)

N Package 260˚C
M Package 220˚C

ESD Tolerance (Note 4)

±

1kV

Operating Temperature Range

LM611AI, LM611I, LM611BI −40˚C≤TJ≤+85˚C
LM611AM, LM611M −55˚C≤T

J

≤+125˚C

LM611C 0˚C≤T

J

≤70˚C

Electrical Characteristics

These specifications apply for V

−

=

GND=0V, V

+

=

5V, V

CM

=

V

OUT

=

2.5V, I

R

=

100 µA, FEEDBACK pin shorted to GND,

unless otherwise specified. Limits in standard typeface are for T

J

=

25˚C; limits in boldface type apply over the Operating

Temperature Range.

LM611M

LM611AM LM611BI

Symbol Parameter Conditions Typical LM611AI LM611I Units

(Note 5) Limits LM611C

(Note 6) Limits

(Note 6)

I

S

Total Supply Current R

LOAD

=

∞

, 210 300 350 µA max

4V ≤ V

+

≤ 36V (32V for LM611C) 221 320 370 µA max

V

S

Supply Voltage Range 2.2 2.8 2.8 V min

2.9 3 3 V min
46 36 32 V max

43 36 32 V max

OPERATIONAL AMPLIFIER

V

OS1

VOSOver Supply 4V ≤ V+≤ 36V 1.5 3.5 5.0 mV max

(4V ≤ V

+

≤ 32V for LM611C) 2.0 6.0 7.0 mV max

V

OS2

VOSOver V

CM

V

CM

=

0V through V

CM

=

1.0 3.5 5.0 mV max

(V

+

− 1.8V), V

+

=

30V, V

−

=

0V 1.5 6.0 7.0 mV max

Average VOSDrift (Note 6)

15

µV/˚C

max

I

B

Input Bias Current 10 25 35 nA max

11 30 40 nA max

I

OS

Input Offset Current 0.2 4 4 nA max

0.3 5 5 nA max

Average Offset Drift
Current

4 pA/˚C

R

IN

Input Resistance Differential 1800 MΩ

Common-Mode 3800 MΩ

C

IN

Input Capacitance Common-Mode 5.7 pF

e

n

Voltage Noise f=100 Hz,

Input Referred

74

I

n

Current Noise f=100 Hz,

Input Referred

58

CMRR Common-Mode V

+

=

30V, 0V ≤ V

CM

≤ (V+− 1.8V) 95 80 75 dB min

Rejection-Ratio CMRR=20 log (∆V

CM

/∆VOS) 90 75 70 dB min

www.national.com 2

Electrical Characteristics (Continued)

These specifications apply for V

−

=

GND=0V, V

+

=

5V, V

CM

=

V

OUT

=

2.5V, I

R

=

100 µA, FEEDBACK pin shorted to GND,

unless otherwise specified. Limits in standard typeface are for T

J

=

25˚C; limits in boldface type apply over the Operating

Temperature Range.

LM611M

LM611AM LM611BI

Symbol Parameter Conditions Typical LM611AI LM611I Units

(Note 5) Limits LM611C

(Note 6) Limits

(Note 6)

OPERATIONAL AMPLIFIER

PSRR Power Supply 4V ≤ V

+

≤ 30V, V

CM

=

V

+

/2, 110 80 75 dB min

Rejection-Ratio PSRR=20 log (∆V

+

/∆VOS) 100 75 70 dB min

A

V

Open Loop R

L

=

10 kΩ to GND, V

+

=

30V, 500 100 94 V/mV

Voltage Gain 5V ≤ V

OUT

≤ 25V 50 40 40 min

SR Slew Rate V

+

=

30V (Note 7) 0.70 0.55 0.50 V/µs

0.65 0.45 0.45

GBW Gain Bandwidth C

L

=

50 pF 0.80 MHz

0.50

V

O1

Output Voltage R

L

=

10 kΩ to GND V

+

− 1.4 V+− 1.7 V+− 1.8 V min

Swing High V

+

=

36V (32V for LM611C) V

+

− 1.6 V+− 1.9 V+− 1.9 V min

V

O2

Output Voltage R

L

=

10 kΩ to V

+

V−+ 0.8 V−+ 0.9 V−+ 0.95 V max

Swing Low V

+

=

36V (32V for LM611C) V

−

+ 0.9 V−+ 1.0 V−+ 1.0 V max

I

OUT

Output Source V

OUT

=

2.5V, V

+IN

=

0V, 25 20 16 mA min

Current V

−IN

=

−0.3V 15 13 13 mA min

I

SINK

Output Sink V

OUT

=

1.6V, V

+IN

=

0V, 17 14 13 mA min

Current V

−IN

=

0.3V 98 8mA min

I

SHORT

Short Circuit Current V

OUT

=

0V, V

+IN

=

3V, 30 50 50 mA max

V

−IN

=

2V, Source 40 60 60 mA max

V

OUT

=

5V, V

+IN

=

2V, 30 60 70 mA max

V

−IN

=

3V, Sink 32 80 90 mA max

VOLTAGE REFERENCE

V

R

Reference Voltage (Note 8) 1.244 1.2365 1.2191 V min

1.2515 1.2689 V max

(

±

0.6%)(

±

2.0%)

Average Temperature
Drift

(Note 9)

10 80 150

PPM/˚C

max

Hysteresis Hyst=(Vro' − Vro)/∆TJ(Note 10)

3.2 µV/˚C

VRChange V

R(100 µA)−VR(17 µA)

0.05 1 1 mV max

with Current 0.1 1.1 1.1 mV max

V

R(10 mA)−VR(100 µA)

1.5 5 5 mV max

(Note 11) 2.0 5.5 5.5 mV max

R Resistance ∆V

R(10→0.1 mA)

/9.9 mA 0.2 0.56 0.56 Ω max

∆V

R(100→17 µA)

/83 µA 0.6 13 13 Ω max

VRChange with V

R(Vro=Vr)−VR(Vro=6.3V)

2.5 7 7 mV max

High V

RO

(5.06V between Anode and
FEEDBACK)

2.8 10 10 mV max

VRChange with V

R(V+=5V)−VR(V+=36V)

0.1 1.2 1.2 mV max

V

+

Change (V

+

=

32V for LM611C) 0.1 1.3 1.3 mV max

V

R(V+=5V)−VR(V+=3V)

0.01 1 1 mV max

0.01 1.5 1.5 mV max

www.national.com3

Electrical Characteristics (Continued)

These specifications apply for V

−

=

GND=0V, V

+

=

5V, V

CM

=

V

OUT

=

2.5V, I

R

=

100 µA, FEEDBACK pin shorted to GND,

unless otherwise specified. Limits in standard typeface are for T

J

=

25˚C; limits in boldface type apply over the Operating

Temperature Range.

LM611M

LM611AM LM611BI

Symbol Parameter Conditions Typical LM611AI LM611I Units

(Note 5) Limits LM611C

(Note 6) Limits

(Note 6)

VOLTAGE REFERENCE

VRChange with V

+

=

V

+

max, ∆V

R

=

V

R

V

ANODE

Change (@V

ANODE

=

V

−

=

GND) − V

R

0.7 1.5 1.6 mV max

(

@

V

ANODE

=

V

+

− 1.0V) 3.3 3.0 3.0 mV max

I

FB

FEEDBACK Bias IFB;V

ANODE

≤ VFB≤ 5.06V 22 35 50 nA max

Current 29 40 55 nA max

e

n

VRNoise 10 Hz to 10,000 Hz, V

RO

=

V

R

30 µV

RMS

Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the de­vice beyond its rated operating conditions.

Note 2: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below
V

−

, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined

and unpredictable when any parasitic diode or transistor is conducting.
Note 3: Junction temperature may be calculated using T

J

=

T

A+PDθJA

. The given thermal resistance is worst-case for packages in sockets in still air. For packages

soldered to copper-clad board with dissipation from one op amp or reference output transistor, nominal θ

JA

is 90˚C/W for the N package and 135˚C/W for the M pack-

age.

Note 4: Human body model, 100 pF discharged through a 1.5 kΩ resistor.
Note 5: Typical values in standard typeface are for T

J

=

25˚C; values in boldface type apply for the full operating temperature range. These values represent the

most likely parametric norm.

Note 6: All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold face type).
Note 7: Slew rate is measured with op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V,and the output voltage

transition is sampled at 10V and 20V. For falling slew rate, the input voltage is driven from 25V to 5V, and output voltage transition is sampled at 20V and 10V.
Note 8: V

R

is the cathode-feedback voltage, nominally 1.244V.

Note 9: Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is
10

6

•

∆VR/(V

R[25˚C]

•

∆TJ), where ∆VRis the lowest value subtracted from the highest, V

R[25˚C]

is the value at 25˚C, and ∆TJis the temperature range. This parameter

is guaranteed by design and sample testing.
Note 10: Hysteresis is the change in V

R

caused by a change in TJ, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the

hysteresis to the typical value, its junction temperature should be cycled in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C.

Note 11: Low contact resistance is required for accurate measurement.
Note 12: Military RETS 611AMX electrical test specification is available on request. The LM611AMJ/883 can also be procured as a Standard Military Drawing.

Simplified Schematic Diagrams

Op Amp

DS009221-3

www.national.com 4

Simplified Schematic Diagrams (Continued)

Typical Performance Characteristics (Reference) T

J

=

25˚C, FEEDBACK pin shorted to V

−

=

0V, unless otherwise noted

Reference

DS009221-91

Bias

DS009221-92

Reference Voltage vs Temp
on 5 Representative Units

DS009221-33

Reference Voltage Drift

DS009221-34

Accelerated Reference
Voltage Drift vs Time

DS009221-35

Reference Voltage vs
Current and Temperature

DS009221-36

Reference Voltage vs
Current and Temperature

DS009221-37

Reference Voltage vs
Reference Current

DS009221-38

www.national.com5

Typical Performance Characteristics (Reference) T

J

=

25˚C, FEEDBACK pin shorted to V

−

=

0V, unless otherwise noted (Continued)

Reference Voltage vs
Reference Current

DS009221-39

Reference AC
Stability Range

DS009221-40

Feedback Current vs
Feedback-to-Anode Voltage

DS009221-41

Feedback Current vs
Feedback-to-Anode Voltage

DS009221-42

Reference Noise Voltage
vs Frequency

DS009221-43

Reference Small-Signal
Resistance vs Frequency

DS009221-44

Reference Power-Up Time

DS009221-45

Reference Voltage with
Feedback Voltage Step

DS009221-46

Reference Voltage with
100

z

12 µA Current Step

DS009221-47

www.national.com 6