NSC LM3303MX, LM3303M, LM3303J Datasheet

TL/H/10064

LM3303/LM3403 Quad Operational Amplifiers

February 1995

LM3303/LM3403
Quad Operational Amplifiers

General Description

The LM3303 and LM3403 are monolithic quad operational
amplifiers consisting of four independent high gain, internal­ly frequency compensated, operational amplifiers designed
to operate from a single power supply or dual power sup­plies over a wide range of voltages. The common mode
input range includes the negative supply, thereby eliminat­ing the necessity for external biasing components in many
applications.

Features

Y

Input common mode voltage range includes ground or
negative supply

Y

Output voltage can swing to ground or negative supply

Y

Four internally compensated operational amplifiers in a
single package

Y

Wide power supply range single supply of 3.0V to 36V
dual supply of

g

1.5V tog18V

Y

Class AB output stage for minimal crossover distortion

Y

Short circuit protected outputs

Y

High open loop gain 200k

Y

LM741 operational amplifier type performance

Applications

Y

Filters

Y

Voltage controlled oscillators

Connection Diagram

14-Lead DIP and SO-14 Package

TL/H/10064– 1

Top View

Order Information

Device Package Package

Code Code Description

LM3303J J14A Ceramic DIP
LM3303N N14A Molded DIP

LM3303M M14A Molded Surface Mount
LM3403J J14A Ceramic DIP
LM3403N N14A Molded DIP
LM3403M M14A Molded Surface Mount

Equivalent Circuit ((/4 of Circuit)

TL/H/10064– 2

C

1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

Absolute Maximum Ratings

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Storage Temperature Range

Ceramic DIP

b

65§Ctoa175§C

Molded DIP and SO-14

b

65§Ctoa150§C

Operating Temperature Range

Industrial (LM3303)

b

40§Ctoa85§C

Commercial (LM3403) 0

§

Ctoa70§C

Lead Temperature

Ceramic DIP (Soldering, 60 sec.) 300

§

C
Molded DIP and SO-14
(Soldering, 10 sec.) 265

§

C

Internal Power Dissipation (Notes 1, 2)

14L-Ceramic DIP 1.36W
14L-Molded DIP 1.04W
SO-14 0.93W

Supply Voltage between V

a

and V

b

36V

Differential Input Voltage (Note 3)

g

30V

Input Voltage (Vb)b0.3V to V

a

ESD Tolerance (To Be Determined)

LM3303 and LM3403
Electrical Characteristics

T

A

e

25§C, V

CC

e

g

15V, unless otherwise specified

Symbol Parameter Conditions

LM3303 LM3403

Units

Min Typ Max Min Typ Max

V

IO

Input Offset Voltage 2.0 8.0 2.0 8.0 mV

I

IO

Input Offset Current 30 75 30 50 nA

I

IB

Input Bias Current 200 500 200 500 nA

Z

I

Input Impedance 0.3 1.0 0.3 1.0 MX

I

CC

Supply Current V

O

e

0V, R

L

e %

2.8 7.0 2.8 7.0 mA

CMR Common Mode Rejection R

S

s

10 kX 70 90 70 90 dB

V

IR

Input Voltage Range

a

12Va12.5V

a

13Va13.5V

V

to V

b

to V

b

to Vbto V

b

PSRR Power Supply

30 150 30 150 mV/V

Rejection Ratio

I

OS

Output Short Circuit Current

g

10

g

30g45g10

g

30g45 mA

(Per Amplifier) (Note 4)

A

VS

Large Signal Voltage Gain V

O

e

g

10V,

20 200 20 200 V/mV

R

L

t

2.0 kX

V

OP

Output Voltage Swing R

L

e

10 kX

g

12 12.5

g

12a13.5

V

R

L

e

2.0 kX

g

10 12

g

10

g

13

TR Transient Rise Time/ V

O

e

50 mV,

0.3 0.3 ms

Response Fall Time A

V

e

1.0, R

L

e

10 kX

Overshoot V

O

e

50 mV,

5.0 5.0 %

A

V

e

1.0, R

L

e

10 kX

BW Bandwidth V

O

e

50 mV,

1.0 1.0 MHz

A

V

e

1.0, R

L

e

10 kX

SR Slew Rate V

I

eb

10V toa10V,

0.6 0.6 V/ms

A

V

e

1.0

2

LM3303 and LM3403 (Continued)

Electrical Characteristics T

A

e

25§C, V

CC

e

g

15V, unless otherwise specified

The following specifications apply forb40§CsT

A

s

a

85§C for the LM3303, and 0§CsT

A

s

a

70§C for the LM3403

Symbol Parameter Conditions

LM3303 LM3403

Units

Min Typ Max Min Typ Max

V

IO

Input Offset Voltage 10 10 mV

DVIO/DT Input Offset Voltage

10 10 mV/

§

C

Temperature Sensitivity

I

IO

Input Offset Current 250 200 nA

DIIO/DT Input Offset Current

50 50 pA/

§

C

Temperature Sensitivity

I

IB

Input Bias Current 1000 800 nA

A

VS

Large Signal Voltage Gain V

O

e

g

10V,

15 15 V/mV

R

L

t

2.0 kX

V

OP

Output Voltage Swing R

L

e

2.0 kXg10

g

10 V

LM3303 and LM3403
Electrical Characteristics

T

A

e

25§C, Vae5.0V, VbeGND, unless otherwise specified

Symbol Parameter Conditions

LM3303 LM3403

Units

Min Typ Max Min Typ Max

V

IO

Input Offset Voltage 8.0 2.0 8.0 mV

I

IO

Input Offset Current 75 30 50 nA

I

IB

Input Bias Current 500 200 500 nA

I

CC

Supply Current 2.5 7.0 2.5 7.0 mA

PSRR Power Supply

150 150 mV/V

Rejection Ratio

A

VS

Large Signal Voltage Gain R

L

t

2.0 kX 20 200 20 200 V/mV

V

OP

Output Voltage Swing R

L

e

10 kX 3.3 3.3

(Note 5)

5.0VsV

a

s

30V, (Va)(V

a

)

V

R

L

e

10 kX

b

2.0

b

2.0

CS Channel Separation 1.0 Hzsfs20 kHz

b

120

b

120 dB

(Input Referenced)

Note 1: T

J Max

e

150§C for the Molded DIP and SO-14, and 175§C for the Ceramic DIP.

Note 2: Ratings apply to ambient temperature at 25

§

C. Above this temperature, derate the 14L-Ceramic DIP at 9.1 mW/§C, the 14L-Molded DIP at 8.3 mW/§C, and

the SO-14 at 7.5 mW/

§

C.

Note 3: For supply voltage less than 30V between V

a

and Vb, the absolute maximum input voltage is equal to the supply voltage.

Note 4: Not to exceed maximum package power dissipation.

Note 5: Output will swing to ground.

3