NSC LM329DZ, LM329CZ, LM329CH, LM329BZ, LM329AH Datasheet

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LM129/LM329 Precision Reference
LM129/LM329 Precision Reference
March 2000
General Description
The LM129 and LM329 family are precision multi-current temperature-compensated 6.9V zener references with dy­namic impedances a factor of 10 to 100 less than discrete di­odes. Constructed in a single silicon chip, the LM129 uses active circuitry to buffer the internal zener allowing the de­vice to operate over a 0.5 mA to 15 mA range with virtually no change in performance. The LM129 and LM329 are avail­able with selected temperature coefficients of 0.001, 0.002,
0.005 and 0.01%/˚C. These references also have excellent long term stability and low noise.
Anewsubsurfacebreakdownzener used in the LM129 gives lower noise and better long-term stability than conventional IC zeners. Further the zener and temperature compensating transistor are made by a planar process so they are immune to problems that plague ordinary zeners. For example, there is virtually no voltage shift in zener voltage due to tempera­ture cycling and the device is insensitive to stress on the leads.
The LM129 can be used in place of conventional zeners with improved performance. The low dynamic impedance simpli­fies biasing and the wide operating current allows the re­placement of many zener types.
Connection Diagrams
The LM129 is packaged in a 2-lead TO-46 package and is rated for operation over a −55˚C to +125˚C temperature range. The LM329 for operation over 0˚C to 70˚C is available in both a hermetic TO-46 package and a TO-92 epoxy pack­age.
Features
n 0.6 mA to 15 mA operating current n 0.6dynamic impedance at any current n Available with temperature coefficients of 0.001%/˚C n 7µV wideband noise n 5% initial tolerance n 0.002% long term stability n Low cost n Subsurface zener
Metal Can Package (T0–46)
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Pin 2 is electrically connected to case
Bottom View
Order Number LM129AH, LM129AH/883, LM129BH,
LM129BH/883, LM129CH, LM329AH, LM329BH,
LM329CH or LM329DH See NS Package H02A
Plastic Package (TO-92)
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Bottom View
Order Number LM329BZ,
LM329CZ or LM329DZ See NS Package Z03A
© 2000 National Semiconductor Corporation DS005714 www.national.com
Typical Applications
LM129/LM329
Simple Reference
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LM129/LM329
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
(Note 3) Reverse Breakdown Current 30 mA
Forward Current 2 mA
Operating Temperature Range
LM129 −55˚C to +125˚C
LM329 0˚C to +70˚C Storage Temperature Range −55˚C to +150˚C Soldering Information
TO-92 package: 10 sec. 260˚C
TO-46 package: 10 sec. 300˚C
Electrical Characteristics (Note 2)
LM129A, B, C LM329A, B, C, D
Parameter Conditions Units
Min Typ Max Min Typ Max
Reverse Breakdown Voltage T
Reverse Breakdown Change T
with Current (Note 4) 0.6 mA I Reverse Dynamic Impedance T (Note 4) RMS Noise T
Long Term Stability T (1000 hours) I Temperature Coefficient I
LM129A, LM329A 6 10 6 10 ppm/˚C
LM129B, LM329B 15 20 15 20 ppm/˚C
LM129C, LM329C 30 50 30 50 ppm/˚C
LM329D 50 100 ppm/˚C Change In Reverse Breakdown 1 mA I
Temperature Coefficient Reverse Breakdown Change 1 mA I
with Current Reverse Dynamic Impedance 1 mA I
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits.
Note 2: These specifications apply for −55˚C T temperature for an LM129 is 150˚C and LM329 is 100˚C. For operating at elevated temperature, devices in TO-46 package must be derated based on a thermal re­sistance of 440˚C/W junction to ambient or 80˚C/W junction to case. For the TO-92 package, the derating is based on 180˚C/W junction to ambient with 0.4" leads from a PC board and 160˚C/W junction to ambient with 0.125" lead length to a PC board.
Note 3: Refer to RETS129H for LM129 family military specifications. Note 4: These changes are tested on a pulsed basis with a low duty-cycle. For changes versus temperature, compute in terms of tempco.
= 25˚C,
A
0.6 mA I = 25˚C,
A
= 25˚C, IR= 1 mA 0.6 1 0.8 2
A
= 25˚C,
A
15 mA 6.7 6.9 7.2 6.6 6.9 7.25 V
R
15 mA 9 14 9 20 mV
R
10 Hz F 10 kHz 7 20 7 100 µV
= 45˚C±0.1˚C,
A
=1mA±0.3% 20 20 ppm
R
=1mA
R
15 mA 1 1 ppm/˚C
R
15 mA 12 12 mV
R
15 mA 0.8 1
R
+125˚C for the LM129 and 0˚C TA≤ +70˚C for the LM329 unless otherwise specified. The maximum junction
A
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