NSC DS92LV010MWC, DS92LV010ATMX, DS92LV010ATM Datasheet

DS92LV010A
Bus LVDS 3.3/5.0V Single Transceiver

General Description

The DS92LV010Ais one in a series of transceivers designed
specifically for the high speed, low power proprietary bus
backplane interfaces. The device operates from a single

3.3V or 5.0V power supply and includes one differential line
driver and one receiver. To minimize bus loading the driver
outputs and receiver inputs are internally connected. The
logic interface provides maximum flexibility as 4 separate
lines are provided (DIN, DE, RE, and ROUT). The device
also features flow through which allows easy PCB routing for
short stubs between the bus pins and the connector. The
driver has 10 mA drive capability, allowing it to drive heavily
loaded backplanes, with impedance as low as 27 Ohms.

The driver translates between TTL levels (single-ended) to
Low VoltageDifferential Signaling levels. This allows for high
speed operation, while consuming minimal power with re­duced EMI. In addition the differential signaling provides
common mode noise rejection of

±

1V.

The receiver threshold is

±

100mV over a±1V common
mode range and translates the low voltage differential levels
to standard (CMOS/TTL) levels.

Features

n Bus LVDS Signaling (BLVDS)
n Designed for Double Termination Applications
n Balanced Output Impedance
n Lite Bus Loading 5pF typical
n Glitch free power up/down (Driver disabled)
n 3.3V or 5.0V Operation

n

±

1V Common Mode Range

n

±

100mV Receiver Sensitivity

n High Signaling Rate Capability (above 100 Mbps)
n Low Power CMOS design
n Product offered in 8 lead SOIC package
n Industrial Temperature Range Operation

Connection Diagram

Block Diagram

TRI-STATE®is a registered trademark of National Semiconductor Corporation.

DS100052-1

Order Number DS92LV010ATM

See NS Package Number M08A

DS100052-2

May 1998

DS92LV010A Bus LVDS 3.3/5.0V Single Transceiver

© 1998 National Semiconductor Corporation DS100052 www.national.com

Absolute Maximum Ratings (Notes 1, 2)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Supply Voltage (V

CC

) 6.0V

Enable Input Voltage (DE,
RE)

−0.3V to (VCC+

0.3V)

Driver Input Voltage (DIN) −0.3V to (V

CC

+

0.3V)

Receiver Output Voltage

(R

OUT

)

−0.3V to (V

CC

+

0.3V)

Bus Pin Voltage (DO/RI

±

) −0.3V to + 3.9V

Driver Short Circuit
Current

Continuous

ESD (HBM 1.5 kΩ, 100
pF)

>

2.0 kV

Maximum Package Power Dissipation at 25˚C

SOIC 1025 mW
Derate SOIC Package 8.2 mW/˚C

Storage Temperature
Range

−65˚C to +150˚C

Lead Temperature

(Soldering, 4 sec.) 260˚C

Recommended Operating
Conditions

Min Max Units

Supply Voltage (V

CC

), or 3.0 3.6 V

Supply Voltage (V

CC

) 4.5 5.5 V
Receiver Input Voltage 0.0 2.9 V
Operating Free Air

Temperature

−40 +85 ˚C

DC Electrical Characteristics (Notes 2, 3)

TA= −40˚C to +85˚C unless otherwise noted, VCC= 3.3V±0.3V

Symbol Parameter Conditions Pin Min Typ Max Units

V

OD

Output Differential
Voltage

RL=27Ω,

Figure 1

DO+/RI+,
DO−/RI−

140 250 360 mV

∆V

OD

VODMagnitude Change 330mV

V

OS

Offset Voltage 1 1.25 1.65 V

∆V

OS

Offset Magnitude
Change

550mV

I

OSD

Output Short Circuit
Current

VO= 0V, DE = V

CC

−12 −20 mA

V

OH

Voltage Output High VID= +100 mV IOH= −400 µA R

OUT

2.8 3 V
Inputs Open 2.8 3 V
Inputs Shorted 2.8 3 V
Inputs Terminated,

R

L

=27Ω

2.8 3 V

V

OL

Voltage Output Low IOL= 2.0 mA, VID= −100 mV 0.1 0.4 V

I

OS

Output Short Circuit
Current

V

OUT

= 0V, VID= +100 mV −5 −35 −85 mA

V

TH

Input Threshold High DE = 0V DO+/RI+,

DO−/RI−

+100 mV

V

TL

Input Threshold Low −100 mV

I

IN

Input Current DE = 0V, VIN= +2.4V, or 0V −20

±

1 +20 µA

V

CC

= 0V, VIN= +2.4V, or 0V −20

±

1 +20 µA

V

IH

Minimum Input High
Voltage

DIN, DE,RE2.0 V

CC

V

V

IL

Maximum Input Low
Voltage

GND 0.8 V

I

IH

Input High Current VIN=VCCor 2.4V

±1±

10 µA

I

IL

Input Low Current VIN= GND or 0.4V

±1±

10 µA

V

CL

Input Diode Clamp
Voltage

I

CLAMP

= −18 mA −1.5 −0.8 V

I

CCD

Power Supply Current DE = RE = VCC,RL=27Ω V

CC

13 20 mA

I

CCR

DE=RE=0V 58mA

I

CCZ

DE = 0V, RE = V

CC

3 7.5 mA

I

CC

DE=VCC,RE=0V,RL=27Ω 16 22 mA

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DC Electrical Characteristics (Notes 2, 3) (Continued)

TA= −40˚C to +85˚C unless otherwise noted, VCC= 3.3V±0.3V

Symbol Parameter Conditions Pin Min Typ Max Units

C

output

Capacitance@BUS
Pins

DO+/RI+,
DO−/RI−

5pF

DC Electrical Characteristics (Notes 2, 3)

TA= −40˚C to +85˚C unless otherwise noted, VCC= 5.0V±0.5V

Symbol Parameter Conditions Pin Min Typ Max Units

V

OD

Output Differential
Voltage

RL=27Ω,

Figure 1

DO+/RI+,
DO−/RI−

145 270 390 mV

∆V

OD

VODMagnitude Change 330mV

V

OS

Offset Voltage 1 1.35 1.65 V

∆V

OS

Offset Magnitude
Change

550mV

I

OSD

Output Short Circuit
Current

VO= 0V, DE = V

CC

−12 −20 mA

V

OH

Voltage Output High VID= +100 mV IOH= −400 µA R

OUT

4.3 5.0 V
Inputs Open 4.3 5.0 V
Inputs Shorted 4.3 5.0 V
Inputs

Terminated, R

L

=27Ω

4.3 5.0 V

V

OL

Voltage Output Low IOL= 2.0 mA, VID= −100 mV 0.1 0.4 V

I

OS

Output Short Circuit
Current

V

OUT

= 0V, VID= +100 mV −35 −90 −130 mA

V

TH

Input Threshold High DE = 0V DO+/RI+,

DO−/RI−

+100 mV

V

TL

Input Threshold Low −100 mV

I

IN

Input Current DE = 0V, VIN= +2.4V, or 0V −20

±

1 +20 µA

V

CC

= 0V, VIN= +2.4V, or 0V −20

±

1 +20 µA

V

IH

Minimum Input High
Voltage

DIN,
DE,
RE

2.0 V

CC

V

V

IL

Maximum Input Low
Voltage

GND 0.8 V

I

IH

Input High Current VIN=VCCor 2.4V

±1±

10 µA

I

IL

Input Low Current VIN= GND or 0.4V

±1±

10 µA

V

CL

Input Diode Clamp
Voltage

I

CLAMP

= −18 mA −1.5 −0.8 V

I

CCD

Power Supply Current DE = RE = VCC,RL=27Ω V

CC

17 25 mA

I

CCR

DE=RE=0V 610mA

I

CCZ

DE = 0V, RE = V

CC

38mA

I

CC

DE=VCC,RE=0V,RL=27Ω 20 25 mA

C

output

Capacitance@BUS
Pins

DO+/RI+,
DO−/RI−

5pF

Note 1: “Absolute Maximum Ratings” are these beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should
be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.

Note 2: All currents into device pins are positive; all currents out of device pins are negative.All voltages are referenced to device ground except V

OD,VID,VTH

and

V

TL

unless otherwise specified.

Note 3: All typicals are given for V

CC

= +3.3V or 5.0 V and TA= +25˚C, unless otherwise stated.

Note 4: ESD Rating: HBM (1.5 kΩ, 100 pF)

>

2.0 kV EAT (0Ω, 200 pF)>300V.

Note 5: C

L

includes probe and fixture capacitance.

Note 6: Generator waveforms for all tests unless otherwise specified: f = 1MHz, ZO = 50Ω,tr,tf≤6.0ns (0%–100%) on control pins and ≤ 1.0ns for RI inputs.
Note 7: The DS92LV010A is a current mode device and only function with datasheet specification when a resistive load is applied between the driver outputs.
Note 8: For receiver TRI-STATE

®

delays, the switch is set to VCCfor t

PZL

, and t

PLZ

and to GND for t

PZH

, and t

PHZ

.

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