NSC DS90LV019TMX, DS90LV019TM Datasheet

DS90LV019

3.3V or 5V LVDS Driver/Receiver

General Description

The DS90LV019 is a Driver/Receiver designed specifically
for the high speed low power point-to-point interconnect ap­plications. The device operates from a single 3.3V or 5.0V
power supply and includes one differential line driver and
one receiver. The DS90LV019 features an independent
driver and receiver with TTL/CMOS compatibility (D

IN

and

R

OUT

). The logic interface provides maximum flexibility as 4

separate lines are provided (D

IN

, DE, RE, and R

OUT

). The
device also features a flow-through pin out which allows
easy PCB routing for short stubs between its pins and the
connector. The driver has 3.5 mA output loop current.

The driver translates between TTL levels (single-ended) to
Low Voltage DifferentialSignaling levels. This allows for high
speed operation, while consuming minimal power with re­duced EMI. In addition, the differential signaling provides
common-mode noise rejection.

The receiver threshold is

±

100 mV over a±1V common­mode range and translates the low swing differential levels
to standard (TTL/CMOS) levels.

Features

n LVDS Signaling
n 3.3V or 5.0V operation
n Low power CMOS design
n Balanced Output Impedance
n Glitch free power up/down (Driver disabled)
n High Signaling Rate Capacity (above 100 Mbps)
n Ultra Low Power Dissipation

n

±

1V Common-Mode Range

n

±

100 mV Receiver Sensitivity

n Product offered in SOIC package
n Flow-Through Pin Out
n Industrial Temperature Range Operation

Connection Diagram

Block Diagram

TRI-STATE®is a registered trademark of National Semiconductor Corporation.

DS100053-1

Order Number DS90LV019TM

See NS Package Number M14A

DS100053-2

June 1998

DS90LV019 3.3V or 5V LVDS Driver/Receiver

© 1998 National Semiconductor Corporation DS100053 www.national.com

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Supply Voltage V

CC

6.0V

Enable Input Voltage (DE, RE)

−0.3V to (VCC+0.3V)

Driver Input Voltage (D

IN

) −0.3V to (VCC+ 0.3V)

Receiver Output Voltage

(R

OUT

) −0.3V to (VCC+ 0.3V)

Driver Output Voltage (DO

±

) −0.3V to +3.9V

Receiver Input Voltage (RI

±

) −0.3V to (VCC+ 0.3V)
Driver Short Circuit Current Continuous
ESD (Note 4)

(HBM, 1.5 kΩ, 100 pF)

>

2.0 kV

(EIAJ, 0 Ω, 200 pF)

>

200 V

Maximum Package Power Dissipation at 25˚C

SOIC 960 mW

Derate SOIC Package 7.7mW/˚C
Storage Temperature Range −65˚C to +150˚C
Lead Temperature

(Soldering, 4 sec.) 260˚C

Recommended Operating
Conditions

Min Max Units

Supply Voltage (V

CC

) or 3.0 3.6 V

Supply Voltage (V

CC

) 4.5 5.5 V
Receiver Input Voltage 0.0 2.4 V
Operating Free Air

Temperature T

A

−40 +85 ˚C

DC Electrical Characteristics

TA= −40˚C to +85˚C unless otherwise noted, VCC= 3.3±0.3V. (Notes 2, 3)

Symbol Parameter Conditions Pin Min Typ Max Units
DIFFERENTIAL DRIVER CHARACTERISTICS

V

OD

Output Differential Voltage RL= 100Ω (

Figure 1

) DO+,

DO−

250 350 450 mV

∆V

OD

VODMagnitude Change 660mV

V

OS

Offset Voltage 1 1.25 1.7 V

∆V

OS

Offset Magnitude Change 5 60 mV

I

OZD

TRI-STATE®Leakage V

OUT=VCC

or GND, DE = 0V −10

±

1 +10 µA

I

OXD

Power-Off Leakage V

OUT

= 3.6V or GND, VCC= 0V −10

±

1 +10 µA

I

OSD

Output Short Circuit Current V

OUT

= 0V, DE = V

CC

−10 −6 −4 mA

DIFFERENTIAL RECEIVER CHARACTERISTICS

V

OH

Voltage Output High VID = +100 mV IOH= −400 µA R

OUT

2.9 3.3 V

Inputs Open 2.9 3.3 V

V

OL

Voltage Output Low IOL= 2.0 mA, VID = −100 mV 0.1 0.4 V

I

OS

Output Short Circuit Current V

OUT

= 0V −75 −34 −20 mA

V

TH

Input Threshold High RI+,

RI−

+100 mV

V

TH

Input Threshold Low −100 mV

I

IN

Input Current VIN= +2.4V or 0V, VCC= 3.6V or

0V

−10

±

1 +10 µA

DEVICE CHARACTERISTICS

V

IH

Minimum Input High Voltage DIN,

DE, RE

2.0 V

CC

V

V

IL

Maximum Input Low Voltage GND 0.8 V

I

IH

Input High Current VIN=VCCor 2.4V

±

1

±

10 µA

I

IL

Input Low Current VIN= GND or 0.4V

±

1

±

10 µA

V

CL

Input Diode Clamp Voltage I

CLAMP

= −18 mA −1.5 −0.7 V

I

CCD

Power Supply Current DE = RE = V

CC

V

CC

9 12.5 mA

I

CCR

DE=RE=0V 4.5 7.0 mA

I

CCZ

DE = 0V, RE = V

CC

3.7 7.0 mA

I

CC

DE=VCC,RE=0V 15 20 mA

C

D output

Capacitance DO+,

DO−

5pF

C

R input

Capacitance RI+,

RI−

5pF

www.national.com 2

DC Electrical Characteristics

TA= −40˚C to +85˚C unless otherwise noted, VCC= 5.0±0.5V. (Notes 2, 3)

Symbol Parameter Conditions Pin Min Typ Max Units

DIFFERENTIAL DRIVER CHARACTERISTICS

V

OD

Output Differential Voltage RL= 100Ω (

Figure 1

) DO+,

DO−

250 360 450 mV

∆V

OD

VODMagnitude Change 660mV

V

OS

Offset Voltage 1 1.25 1.8 V

∆V

OS

Offset Magnitude Change 5 60 mV

I

OZD

TRI-STATE Leakage V

OUT=VCC

or GND, DE = 0V −10

±

1 +10 µA

I

OXD

Power-Off Leakage V

OUT

= 5.5V or GND, VCC= 0V −10

±

1 +10 µA

I

OSD

Output Short Circuit Current V

OUT

= 0V, DE = V

CC

−10 −6 −4 mA

DIFFERENTIAL RECEIVER CHARACTERISTICS

V

OH

Voltage High VID = +100 mV IOH= −400 µA R

OUT

4.3 5.0 V

Inputs Open 4.3 5.0 V

V

OL

Voltage Output Low IOL= 2.0 mA, VID = −100 mV 0.1 0.4 V

I

OS

Output Short Circuit Current V

OUT

= 0V −150 −75 −40 mA

V

TH

Input Threshold High RI+,

RI−

+100 mV

V

TH

Input Threshold Low −100 mV

I

IN

Input Current VIN= +2.4V or 0V, VCC= 5.5V or

0V

−15

±

1 +15 µA

DEVICE CHARACTERISTICS

V

IH

Minimum Input High Voltage DIN,

DE ,RE

2.0 V

CC

V

V

IL

Maximum Input Low Voltage GND 0.8 V

I

IH

Input High Current VIN=VCCor 2.4 V

±

1

±

10 µA

I

IL

Input Low Current VIN= GND or 0.4V

±

1

±

10 µA

V

CL

Input Diode Clamp Voltage I

CLAMP

= −18 mA −1.5 −0.8 V

I

CCD

Power Supply Current DE = RE = V

CC

V

CC

12 19 mA

I

CCR

DE=RE=0V 5.8 8 mA

I

CCZ

DE = 0V, RE = V

CC

4.5 8.5 mA

I

CC

DE=VCC,RE=0V 18 48 mA

C

D output

Capacitance DO+,

DO−

5pF

C

R input

Capacitance RI+,

RI−

5pF

Note 1: “Absolute Maximum Ratings” are these beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should
be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.

Note 2: All currents into device pins arepositive;allcurrentsoutof device pins are negative. All voltages are referenced to device ground unless otherwise specified.
Note 3: All typicals are given for V

CC

= +3.3V or +5.0V and TA= +25˚C, unless otherwise stated.

Note 4: ESD Rating:

HBM (1.5 kΩ, 100 pF)

>

2.0 kV

EIAJ (0Ω, 200 pF)

>

200V.

Note 5: C

L

includes probe and fixture capacitance.

Note 6: Generator waveforms for all tests unless otherwise specified;f=1MHz, Z

O

=50Ω,tr=tf≤6.0 ns (0%–100%).

AC Electrical Characteristics

TA= −40˚C to +85˚C, VCC= 3.3V±0.3V. (Note 6)

Symbol Parameter Conditions Min Typ Max Units

DRIVER TIMING REQUIREMENTS

t

PHLD

Differential Propagation Delay High to Low RL= 100Ω,

C

L

=10pF

(

Figure 2

and

Figure 3

)

2.0 4.0 6.5 ns

t

PLHD

Differential Propagation Delay Low to High 1.0 5.6 7.0 ns

t

SKD

Differential Skew |t

PHLD−tPLHD

| 0.4 1.0 ns

t

TLH

Transition Time Low to High 0.2 0.7 3.0 ns

t

THL

Transition Time High to Low 0.2 0.8 3.0 ns

www.national.com3