NSC DS90CR581MTDX, DS90CR581MTD Datasheet

DS90CR581
LVDS Transmitter 24-Bit Color Flat Panel Display (FPD)
Link

General Description

The DS90CR581 transmitter converts 28 bits of CMOS/TTL
data intofour LVDS (Low Voltage Differential Signaling) data
streams. A phase-locked transmit clock is transmitted in par­allel with the data streams over a fifth LVDS link. Every cycle
of the transmit clock 28 bits of input data are sampled and
transmitted. At a transmit clock frequency of 40 MHz, 24 bits
of RGB data and 4 bits of LCD timing and control data
(FPLINE, FPFRAME, DRDY,CNTL) are transmitted at a rate
of 280 Mbps per LVDS data channel. Using a 40 MHz clock,
the data throughput is 140 Megabytes per second. This
transmitter is intended to interface to any of the FPD Link re­ceivers.

The chipset is an ideal means to solve EMI and cable size
problems associated with wide, high speed TTL interfaces.

Features

n Up to 140 Megabyte/sec Bandwidth
n Narrow bus reduces cable size and cost
n 290 mV swing LVDS devices for low EMI
n Low power CMOS design
n Power down mode
n PLL requires no external components
n Low profile 56-lead TSSOP package
n Rising edge data strobe
n Compatible with TIA/EIA-644 LVDS standard

Block Diagrams

TRI-STATE®is a registered trademark of National Semiconductor Corporation.

DS90CR581

DS012487-29

Order Number DS90CR581MTD

See NS Package Number MTD56

Application

DS012487-2

May 1998

DS90CR581 LVDS Transmitter 24-Bit Color Flat Panel Display (FPD) Link

© 1998 National Semiconductor Corporation DS012487 www.national.com

Connection Diagram

DS90CR581

DS012487-3

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Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Supply Voltage (V

CC

) −0.3 to +6V

CMOS/TTL Input Voltage −0.3 to (V

CC

+ 0.3V)

LVDS Driver Output Voltage −0.3 to (V

CC

+ 0.3V)

LVDS Output Short Circuit
Duration continuous

Junction Temperature +150˚C
Storage Temperature Range −65˚C to +150˚C
Lead Temperature

(Soldering, 4 sec.) +260˚C

Maximum Package Power Dissipation

@

+25˚C

MTD56 (TSSOP) Package:

DS90CR581 1.63W

Package Derating:

DS90CR581 12.5 mW/˚C above

+25˚C

This device does not meet 2000V ESD rating. (Note 4)

Recommended Operating
Conditions

Min Nom Max Units

Supply Voltage (V

CC

) 4.5 5.0 5.5 V

Operating Free

Air Temperature (T

A

) −10 +25 +70 ˚C
Receiver Input Range 0 2.4 V
Supply Noise Voltage (V

CC

) 100 mV

P-P

Electrical Characteristics

Over recommended operating supply and temperature ranges unless otherwise specified

Symbol Parameter Conditions Min Typ Max Units

CMOS/TTL DC SPECIFICATIONS

V

IH

High Level Input Voltage 2.0 V

CC

V

V

IL

Low Level Input Voltage GND 0.8 V

V

CL

Input Clamp Voltage I

CL

=

−18 mA −0.79 −1.5 V

I

IN

Input Current V

IN

=

V

CC

, GND, 2.5V or 0.4V

±

5.1±10 µA

I

OS

Output Short Circuit Current V

OUT

=

0V −120 mA

LVDS DRIVER DC SPECIFICATIONS

V

OD

Differential Output Voltage R

L

=

100Ω 250 290 450 mV

∆V

OD

Change in VODbetween 35 mV
Complimentary Output States

V

OS

Offset Voltage (Note 5) 1.1 1.25 1.375 V

∆V

OS

Change in VOSbetween 35 mV
Complimentary Output States

V

OH

High Level Output Voltage 1.3 1.6 V

V

OL

Low Level Output Voltage 0.9 1.01 V

I

OS

Output Short Circuit Current V

OUT

=

0V, R

L

=

100Ω −2.9 −5 mA

I

OZ

Output TRI-STATE®Current Power Down=0V, V

OUT

=

0V or V

CC

±

1

±

10 µA

TRANSMITTER SUPPLY CURRENT

I

CCTW

Transmitter Supply Current, R

L

=

100Ω,C

L

=

5 pF, f=32.5 MHz 34 51 mA

Worst Case Worst Case Pattern

(

Figure 1,Figure 2

)

f=37.5 MHz 36 53 mA

I

CCTG

Transmitter Supply Current, R

L

=

100Ω,C

L

=

5 pF, f=32.5 MHz 27 47 mA

16 Grayscale Grayscale Pattern

(

Figure 2,Figure 3

)

f=37.5 MHz 28 48 mA

I

CCTZ

Transmitter Supply Current, Power Down=Low 125µA
Power Down

Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device
should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation.

Note 2: Typical values are given for V

CC

=

5.0V and T

A

=

+25˚C.

Note 3: Current into device pins is defined as positive. Current out of device pins is defined as negative. Voltages are referenced to ground unless otherwise speci­fied (except V

OD

and ∆VOD).

Note 4: ESD Rating: HBM (1.5 kΩ, 100 pF)

PLL V

CC

≥ 1000V
All other pins ≥ 2000V
EIAJ (0Ω, 200 pF) ≥ 150V

Note 5: V

OS

previously referred as V

CM

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