NSC DS90CR561MTDX, DS90CR561MTD Datasheet

DS90CR561/DS90CR562
LVDS 18-Bit Color Flat Panel Display (FPD) Link

General Description

The DS90CR561 transmitter converts 21 bits of CMOS/TTL
data into three LVDS (Low Voltage Differential Signaling)
data streams.Aphase-locked transmit clockis transmitted in
parallel with thedata streams over a fourth LVDS link.Every
cycle of the transmit clock 21 bits of input data are sampled
and transmitted. The DS90CR562 receiver converts the
LVDS data streams back into 21 bits of CMOS/TTL data. At
a transmit clock frequency of 40 MHz, 18 bits of RGB data
and 3 bits of LCD timing and control data (FPLINE, FP­FRAME, DRDY) are transmitted at a rate of 280 Mbps per
LVDSdata channel.Using a 40MHz clock,the data through­put is105 Megabytes persecond. These devices are offered
with rising edge data strobes for convenient interface with a
variety of graphics and LCD panel controllers.

This chipset is an ideal means to solve EMI and cable size
problems associated with wide, high speed TTL interfaces.

Features

n Up to 105 Megabyte/sec bandwidth
n Narrow bus reduces cable size and cost
n 290 mV swing LVDS devices for low EMI
n Low power CMOS design
n Power-down mode
n PLL requires no external components
n Low profile 48-lead TSSOP package
n Rising edge data strobe
n Compatible with TIA/EIA-644 LVDS standard

Block Diagrams

TRI-STATE®is a registered trademark of National Semiconductor Corporation.

DS90CR561

DS012470-27

Order Number DS90CR561MTD

See NS Package Number MTD48

DS90CR562

DS012470-1

Order Number DS90CR562MTD

See NS Package Number MTD48

APPLICATION

DS012470-2

July 1997

DS90CR561/DS90CR562 LVDS 18-Bit Color Flat Panel Display (FPD) Link

© 1998 National Semiconductor Corporation DS012470 www.national.com

Connection Diagrams

DS90CR561

DS012470-3

DS90CR562

DS012470-4

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Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contactthe National Semiconductor Sales Office/
Distributors for availability and specifications.

Supply Voltage (V

CC

) −0.3V to +6V

CMOS/TTL Input Voltage −0.3V to (V

CC

+ 0.3V)

CMOS/TTL Ouput Voltage −0.3V to (V

CC

+ 0.3V)

LVDS Receiver Input

Voltage −0.3V to (V

CC

+ 0.3V)

LVDS Receiver Input

Voltage −0.3V to (V

CC

+ 0.3V)

LVDS Output Short Circuit

Duration continuous
Junction Temperature +150˚C
Storage Temperature

Range −65˚C to +150˚C
Lead Temperature

(Soldering, 4 sec.) +260˚C

Maximum Power Dissipation

@

+25˚C

MTD48 (TSSOP) Package:
DS90CR561 1.98W
DS90CR562 1.89W

Package Derating:

DS90CR561 16 mW/˚C above +25˚C
DS90CR562 15 mW/˚C above +25˚C

This device does not meet 2000V ESD rating (Note 4)

Recommended Operating
Conditions

Min Nom Max Units

Supply Voltage (V

CC

) 4.5 5.0 5.5 V

Operating Free Air Temperature

(T

A

) −10 +25 +70 ˚C
Receiver Input Range 0 2.4 V
Supply Noise Voltage (V

CC

) 100 mV

P-P

Electrical Characteristics

Over recommended operating supply and temperature ranges unless otherwise specified

Symbol Parameter Conditions Min Typ Max Units

CMOS/TTL DC SPECIFICATIONS

V

IH

High Level Input Voltage 2.0 V

CC

V

V

IL

Low Level Input Voltage GND 0.8 V

V

OH

High Level Output Voltage I

OH

=

−0.4 mA 3.8 4.9 V

V

OL

Low Level Output Voltage I

OL

=

2 mA 0.1 0.3 V

V

CL

Input Clamp Voltage I

CL

=

−18 mA −0.79 −1.5 V

I

IN

Input Current V

IN

=

V

CC

, GND, 2.5V or 0.4V

±

5.1±10 µA

I

OS

Output Short Circuit Current V

OUT

=

0V −120 mA

LVDS DRIVER DC SPEClFlCATIONS

V

OD

Differential Output Voltage R

L

=

100Ω 250 290 450 mV

∆V

OD

Change in VODbetween 35 mV
Complimentary Output States

V

CM

Common Mode Voltage 1.1 1.25 1.375 V

∆V

CM

Change in VCMbetween 35 mV
Complimentary Output States

V

OH

High Level Output Voltage 1.3 1.6 V

V

OL

Low Level Output Voltage 0.9 1.01 V

I

OS

Output Short Circuit Current V

OUT

=

OV, R

L

=

100Ω −2.9 −5 mA

I

OZ

Output TRI-STATE®Current Power Down=0V, V

OUT

=

0V or V

CC

±1±

10 µA

LVDS RECEIVER DC SPECIFlCATIONS

V

TH

Differential Input High
Threshold

V

CM

=

+1.2V +100 mV

V

TL

Differential Input Low Threshold −100 mV

I

IN

Input Current V

IN

=

+2.4V V

CC

=

5.5V

±

10 µA

V

IN

=

0V

±

10 µA

TRANSMITTER SUPPLY CURRENT

I

CCTW

Transmitter Supply Current, R

L

=

100Ω,C

L

=

5 pF, f=32.5 MHz 34 51 mA

Worst Case Worst Case Pattern (

Figures 1, 3

)f

=

37.5 MHz 36 53 mA

I

CCTG

Transmitter Supply Current, R

L

=

100Ω,C

L

=

5 pF, f=32.5 MHz 27 47 mA

16 Grayscale Grayscale Pattern (

Figures 2, 3

)f

=

37.5 MHz 28 48 mA

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Electrical Characteristics (Continued)

Over recommended operating supply and temperature ranges unless otherwise specified

Symbol Parameter Conditions Min Typ Max Units

TRANSMITTER SUPPLY CURRENT

I

CCTZ

Transmitter Supply Current, Power Down=Low 125µA
Power Down

RECEIVER SUPPLY CURRENT

I

CCRW

Receiver Supply Current, C

L

=

8 pF, f=32.5 MHz 55 75 mA

Worst Case Worst Case Pattern (

Figures 1, 4

)f

=

37.5 MHz 60 80 mA

I

CCRG

Receiver Supply Current, C

L

=

8 pF, f=32.5 MHz 35 55 mA

16 Grayscale 16 Grayscale Pattern (

Figures 2, 4

)f

=

37.5 MHz 37 58 mA

I

CCRZ

Receiver Supply Current, Power Down=Low 110µA
Power Down

Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device
should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation.

Note 2: Typical values are given for V

CC

=

5.0V and T

A

=

+25˚C.

Note 3: Current into device pinsis definedas positive. Current out of device pinsis definedas negative. Voltagesare referencedto ground unless otherwise speci­fied (except V

OD

and ∆VOD).

Note 4: ESD Rating: HBM (1.5 kΩ, 100 pF)

PLL V

CC

≥ 1000V
All other pins ≥ 2000V
EIAJ (0Ω, 200 pF) ≥ 150V

Transmitter Switching Characteristics

Over recommended operating supply and temperature ranges unless otherwise specified

Symbol Parameter Min Typ Max Units

LLHT LVDS Low-to-High Transition Time (

Figure 3

) 0.75 1.5 ns

LHLT LVDS High-to-Low Transition Time (

Figure 3

) 0.75 1.5 ns

TCIT TxCLK IN Transition Time (

Figure 5

)8ns

TCCS TxOUT Channel-to-Channel Skew (Note 5) (

Figure 6

) 350 ps

TPPos0 Transmitter Output Pulse Position for Bit 0 (

Figure 17

)f

=

20 MHz −200 150 350 ps
TPPos1 Transmitter Output Pulse Position for Bit 1 6.3 7.2 7.5 ns
TPPos2 Transmitter Output Pulse Position for Bit 2 12.8 13.6 14.6 ns
TPPos3 Transmitter Output Pulse Position for Bit 3 20 20.8 21.5 ns
TPPos4 Transmitter Output Pulse Position for Bit 4 27.2 28 28.5 ns
TPPos5 Transmitter Output Pulse Position for Bit 5 34.5 35.2 35.6 ns
TPPos6 Transmitter Output Pulse Position for Bit 6 42.2 42.6 42.9 ns
TPPos0 Transmitter Output Pulse Position for Bit 0 (

Figure 17

)f

=

40 MHz −100 100 300 ps
TPPos1 Transmitter Output Pulse Position for Bit 1 2.9 3.3 3.9 ns
TPPos2 Transmitter Output Pulse Position for Bit 2 6.1 6.6 7.1 ns
TPPos3 Transmitter Output Pulse Position for Bit 3 9.7 10.2 10.7 ns
TPPos4 Transmitter Output Pulse Position for Bit 4 13 13.5 14.1 ns
TPPos5 Transmitter Output Pulse Position for Bit 5 17 17.4 17.8 ns
TPPos6 Transmitter Output Pulse Position for Bit 6 20.3 20.8 21.4 ns
TCIP TxCLK IN Period (

Figure 7

) 25 T 50 ns

TCIH TxCLK IN High Time (

Figure 7

) 0.35T 0.5T 0.65T ns

TCIL TxCLK IN Low Time (

Figure 7

) 0.35T 0.5T 0.65T ns

TSTC TxIN Setup to TxCLK IN (

Figure 7

)f

=

20 MHz 14 ns

f=40 MHz 8 ns

THTC TxIN Hold to TxCLK IN (

Figure 7

) 2.5 2 ns

TCCD TxCLK IN to TxCLK OUT Delay

@

25˚C, 5 9.7 ns

V

CC

=

5.0V (

Figure 9

)

TPLLS Transmitter Phase Lock Loop Set (

Figure 11

)10ms

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