NSC DS90CR216AMTDX, DS90CR216AMTD Datasheet

DS90CR286A/DS90CR216A
+3.3V Rising Edge Data Strobe LVDS Receiver 28-Bit
Channel Link—66 MHz, +3.3V Rising Edge Strobe
LVDS Receiver 21-Bit Channel Link—66 MHz

General Description

The DS90CR286A receiver converts the four LVDS data
streams (Up to 1.848 Gbps throughput or 231 Megabytes/
sec bandwidth) back into parallel 28 bits of CMOS/TTL data.
Also available is the DS90CR216A that converts the three
LVDS data streams (Up to 1.386 Gbps throughput or 173
Megabytes/sec bandwidth) back into parallel 21 bits of
CMOS/TTL data. Both Receivers’ outputs are Rising edge
strobe.

This chipset is an ideal means to solve EMI and cable size
problems associated with wide, high speed TTL interfaces.

Features

n 20 to 66 MHz shift clock support
n 50%duty cycle on receiver output clock
n Best–in–Class Set & Hold Times on RxOUTPUTs
n Rx power consumption

<

270 mW (typ)@66MHz Worst

Case

n Rx Power-down mode

<

200µW (max)

n ESD rating

>

7 kV (HBM),>700V (EIAJ)

n PLL requires no external components
n Compatible with TIA/EIA-644 LVDS standard
n Low profile 56-lead or 48-lead TSSOP package
n Operating Temperature: −40˚C to +85˚C

Block Diagrams

TRI-STATE®is a registered trademark of National Semiconductor Corporation.

DS90CR286A

DS100873-30

Order Number DS90CR286AMTD
See NS Package Number MTD56

DS90CR216A

DS100873-31

Order Number DS90CR216AMTD
See NS Package Number MTD48

June 1999

DS90CR286A/DS90CR216A +3.3V Rising Edge Data Strobe LVDS Receiver 28-Bit Channel

Link— 66 MHz, +3.3V Rising Edge Data Strobe LVDS Receiver 21-Bit Channel Link—66 MHz

© 2000 National Semiconductor Corporation DS100873 www.national.com

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Supply Voltage (V

CC

) −0.3V to +4V

CMOS/TTL Output Voltage −0.3V to (V

CC

+ 0.3V)

LVDS Receiver Input Voltage −0.3V to (V

CC

+ 0.3V)
Junction Temperature +150˚C
Storage Temperature −65˚C to +150˚C
Lead Temperature

(Soldering, 4 sec) +260˚C

Maximum Package Power Dissipation Capacity

@

25˚C

MTD56 (TSSOP) Package:

DS90CR286A 1.61 W

MTD48 (TSSOP) Package:

DS90CR216A 1.89 W

Package Derating:

DS90CR286A 12.4 mW/˚C above +25˚C
DS90CR216A 15 mW/˚C above +25˚C

ESD Rating

(HBM, 1.5 kΩ, 100 pF)

>

7kV

(EIAJ, 0Ω, 200 pF)

>

700V

Recommended Operating
Conditions

Min Nom Max Units

Supply Voltage (V

CC

) 3.0 3.3 3.6 V

Operating Free Air

Temperature (T

A

) −40 +25 +85 ˚C
Receiver Input Range 0 2.4 V
Supply Noise Voltage (V

CC

) 100 mV

PP

Electrical Characteristics

Over recommended operating supply and temperature ranges unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Units

CMOS/TTL DC SPECIFICATIONS

V

OH

High Level Output Voltage IOH= −0.4 mA 2.7 3.3 V

V

OL

Low Level Output Voltage IOL= 2 mA 0.06 0.3 V

I

OS

Output Short Circuit Current V

OUT

= 0V −60 −120 mA

LVDS RECEIVER DC SPECIFICATIONS

V

TH

Differential Input High Threshold VCM= +1.2V +100 mV

V

TL

Differential Input Low Threshold −100 mV

I

IN

Input Current VIN= +2.4V, VCC= 3.6V

±

10 µA

V

IN

= 0V, VCC= 3.6V

±

10 µA

RECEIVER SUPPLY CURRENT

ICCRW Receiver Supply Current Worst Case C

L

= 8 pF, Worst
Case Pattern,
DS90CR286A

(Figures

1,2)

,TA=−10˚C to

+70˚C

f = 33 MHz 49 65 mA
f = 37.5 MHz 53 70 mA
f = 66 MHz 81 105 mA

ICCRW Receiver Supply Current Worst Case C

L

= 8 pF, Worst
Case Pattern,
DS90CR286A

(Figures

1,2)

,TA=−40˚C to

+85˚C

f = 40 MHz 53 70 mA

f = 66 MHz 81 105 mA

ICCRW Receiver Supply Current Worst Case C

L

= 8 pF, Worst
Case Pattern,
DS90CR216A

(Figures

1,2)

,TA=−10˚C to

+70˚C

f = 33 MHz 49 55 mA
f = 37.5 MHz 53 60 mA
f = 66 MHz 78 90 mA

ICCRW Receiver Supply Current Worst Case C

L

= 8 pF, Worst
Case Pattern,
DS90CR216A

(Figures

1,2)

,TA=−40˚C to

+85˚C

f = 40 MHz 53 60 mA

f = 66 MHz 78 90 mA

ICCRZ Receiver Supply Current Power Down = Low

10 55 µA

Power Down Receiver Outputs Stay Low during

Power Down Mode

DS90CR286A/DS90CR216A

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Electrical Characteristics (Continued)

Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device

should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation.
Note 2: Typical values are given for V

CC

= 3.3V and TA= +25C.

Note 3: Current into device pins is defined as positive. Current out of device pins is defined as negative. Voltages are referenced to ground unless otherwise speci­fied (except V

OD

and ∆VOD).

Receiver Switching Characteristics

Over recommended operating supply and temperature ranges unless otherwise specified

Symbol Parameter Min Typ Max Units

CLHT CMOS/TTL Low-to-High Transition Time

(Figure 2 )

25ns

CHLT CMOS/TTL High-to-Low Transition Time

(Figure 2 )

1.8 5 ns

RSPos0 Receiver Input Strobe Position for Bit 0

(Figure 9

,

Figure 10)

f = 40 MHz 1.0 1.4 2.15 ns

RSPos1 Receiver Input Strobe Position for Bit 1 4.5 5.0 5.8 ns
RSPos2 Receiver Input Strobe Position for Bit 2 8.1 8.5 9.15 ns
RSPos3 Receiver Input Strobe Position for Bit 3 11.6 11.9 12.6 ns
RSPos4 Receiver Input Strobe Position for Bit 4 15.1 15.6 16.3 ns
RSPos5 Receiver Input Strobe Position for Bit 5 18.8 19.2 19.9 ns
RSPos6 Receiver Input Strobe Position for Bit 6 22.5 22.9 23.6 ns
RSPos0 Receiver Input Strobe Position for Bit 0

(Figure 9

,

Figure 10)

f = 66 MHz 0.7 1.1 1.4 ns

RSPos1 Receiver Input Strobe Position for Bit 1 2.9 3.3 3.6 ns
RSPos2 Receiver Input Strobe Position for Bit 2 5.1 5.5 5.8 ns
RSPos3 Receiver Input Strobe Position for Bit 3 7.3 7.7 8.0 ns
RSPos4 Receiver Input Strobe Position for Bit 4 9.5 9.9 10.2 ns
RSPos5 Receiver Input Strobe Position for Bit 5 11.7 12.1 12.4 ns
RSPos6 Receiver Input Strobe Position for Bit 6 13.9 14.3 14.6 ns
RSKM RxIN Skew Margin (Note 4)

(Figure 11 )

f = 40 MHz 490 ps
f = 66 MHz 400 ps

RCOP RxCLK OUT Period

(Figure 3)

15 T 50 ns

RCOH RxCLK OUT High Time

(Figure 3 )

f = 40 MHz 10.0 12.2 ns

RCOL RxCLK OUT Low Time

(Figure 3)

10.0 11.0 ns

RSRC RxOUT Setup to RxCLK OUT

(Figure 3 )

6.5 11.6 ns

RHRC RxOUT Hold to RxCLK OUT

(Figure 3 )

6.0 11.6 ns

RCOH RxCLK OUT High Time

(Figure 3 )

f = 66 MHz 5.0 7.6 ns

RCOL RxCLK OUT Low Time

(Figure 3)

5.0 6.3 ns

RSRC RxOUT Setup to RxCLK OUT

(Figure 3 )

4.5 7.3 ns

RHRC RxOUT Hold to RxCLK OUT

(Figure 3 )

4.0 6.3 ns

RCCD RxCLK IN to RxCLK OUT Delay 25˚C, V

CC

= 3.3V (Note 5)

(Figure 4 )

3.5 5.0 7.5 ns

RPLLS Receiver Phase Lock Loop Set

(Figure 5 )

10 ms

RPDD Receiver Power Down Delay

(Figure 8 )

1µs

Note 4: Receiver Skew Margin is defined as the valid data sampling region at the receiver inputs. This margin takes into account the transmitter pulse positions (min
and max) and the receiver input setup and hold time (internal data sampling window - RSPos). This margin allows for LVDS interconnect skew, inter-symbol inter­ference (both dependent on type/length of cable), and clock jitter (less than 250 ps).

Note 5: Total latency for the channel link chipset is a function of clock period and gate delays through the transmitter (TCCD) and receiver (RCCD). The total latency
for the 215/285 transmitter and 216A/286A receiver is: (T + TCCD) + (2

*

T + RCCD), where T=Clock period.

DS90CR286A/DS90CR216A

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AC Timing Diagrams

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FIGURE 1. “Worst Case” Test Pattern

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FIGURE 2. DS90CR286A/DS90CR216A (Receiver) CMOS/TTL Output Load and Transition Times

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FIGURE 3. DS90CR286A/DS90CR216A (Receiver) Setup/Hold and High/Low Times

DS100873-6

FIGURE 4. DS90CR286A/DS90CR216A (Receiver) Clock In to Clock Out Delay

DS90CR286A/DS90CR216A

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