NSC DS90CR213MTDX, DS90CR213MTD, CLINK5V21BT-66 Datasheet

DS90CR213/DS90CR214 21-Bit Channel Link—66 MHz
General Description
The DS90CR213 transmitter converts 21 bits of CMOS/TTL data into three LVDS (Low Voltage Differential Signaling) data streams. Aphase-locked transmitclock is transmitted in parallel with the data streams over a fourth LVDSlink. Every cycle of the transmit clock 21 bits of input data are sampled and transmitted. The DS90CR214 receiver converts the LVDS data streams back into 21 bits of CMOS/TTL data. At a transmit clock frequency of 66 MHz, 21bits ofTTL data are transmitted at a rate of 462 Mbps per LVDS data channel. Using a 66 MHz clock, the data throughput is 1.386 Gbit/s (173 Mbytes/s).
The multiplexing of the data lines provides a substantial cable reduction. Long distance parallel single-ended buses typically require a ground wire per active signal (and have very limited noise rejection capability).Thus, fora 21-bit wide data and one clock, up to 44 conductors are required. With the Channel Link chipset as few as 9 conductors (3 data pairs, 1 clock pair and a minimum of one ground) are needed. This provides an 80%reduction in required cable
width, which provides a system cost savings, reduces con­nector physical size and cost, and reduces shielding require­ments due to the cable’s smaller form factor.
The 21 CMOS/TTL inputs can support a variety of signal combinations. For example, 5 4-bit nibbles (byte + parity) or 2 9-bit (byte + 3 parity) and 1 control.
Features
n 66 MHz Clock Support n Up to 173 Mbytes/s bandwidth n Low power CMOS design (
<
610 mW)
n Power-down mode (
<
0.5 mW total)
n Up to 1.386 Gbit/s data throughput n Narrow bus reduces cable size and cost n 290 mV swing LVDS devices for low EMI n PLL requires no external components n Low profile 48-lead TSSOP package n Rising edge data strobe n Compatible with TIA/EIA-644 LVDS Standard
Block Diagrams
TRI-STATE®is a registered trademark of National Semiconductor Corporation.
DS90CR213
DS012888-27
Order Number DS90CR213MTD
See NS Package Number MTD48
DS90CR214
DS012888-1
Order Number DS90CR214MTD
See NS Package Number MTD48
July 1997
DS90CR213/DS90CR214 21-Bit Channel Link—66 MHz
DS90CR213/DS90CR214
© 1998 National Semiconductor Corporation DS012888 www.national.com
1
PrintDate=1998/01/07 PrintTime=09:53:21 28561 ds012888 Rev. No. 5 cmserv
Proof 1
Pin Diagrams
Typical Application
DS90CR213
DS012888-21
DS90CR214
DS012888-22
DS012888-23
PrintDate=1998/01/07 PrintTime=09:53:21 28561 ds012888 Rev. No. 5 cmserv Proof 2
www.national.com 2
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor SalesOffice/ Distributors for availability and specifications.
Supply Voltage (V
CC
) −0.3V to +6V
CMOS/TTL Input Voltage −0.3V to (V
CC
+ 0.3V)
CMOS/TTL Output Voltage −0.3V to (V
CC
+ 0.3V)
LVDS Receiver Input Voltage −0.3V to (V
CC
+ 0.3V)
LVDS Driver Output Voltage −0.3V to (V
CC
+ 0.3V)
LVDS Output Short Circuit
Duration Continuous Junction Temperature +150˚C Storage Temperature −65˚C to +150˚C Lead Temperature
(Soldering, 4 sec) +260˚C Maximum Package Power
Dissipation Capacity
@
25˚C
MTD48 (TSSOP) Package:
DS90CR213 DS90CR214
1.98W
1.89W
Package Derating:
DS90CR213 16 mW/˚C above +25˚C DS90CR214 15 mW/˚C above +25˚C
ESD Rating (Note 4)
This device does not meet 2000V
Recommended Operating Conditions
Min Nom Max Units
Supply Voltage (V
CC
) 4.75 5.0 5.25 V
Operating Free Air
Temperature (T
A
) −10 +25 +70 ˚C Receiver Input Range 0 2.4 V Supply Noise Voltage (V
CC
) 100 mV
P-P
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Units
CMOS/TTL DC SPECIFICATIONS
V
IH
High Level Input Voltage 2.0 V
CC
V
V
IL
Low Level Input Voltage GND 0.8 V
V
OH
High Level Output Voltage I
OH
=
−0.4 mA 3.8 4.9 V
V
OL
Low Level Output Voltage I
OL
=
2 mA 0.1 0.3 V
V
CL
Input Clamp Voltage I
CL
=
−18 mA −0.79 −1.5 V
I
IN
Input Current V
IN
=
V
CC
, GND, 2.5V or 0.4V
±
5.1
±
10 µA
I
OS
Output Short Circuit Current V
OUT
=
0V −120 mA
LVDS DRIVER DC SPECIFICATIONS
V
OD
Differential Output Voltage R
L
=
100 250 290 450 mV
V
OD
Change in VODbetween Complimentary Output States
35 mV
V
OS
Offset Voltage 1.1 1.25 1.375 V
V
OS
Change in Magnitude of V
OS
between Complimentary Output States
35 mV
I
OS
Output Short Circuit Current V
OUT
=
0V, R
L
=
100 −2.9 −5 mA
I
OZ
Output TRI-STATE®Current Powerdown=0V, V
OUT
=
0V or V
CC
±
1
±
10 µA
LVDS RECEIVER DC SPECIFICATIONS
V
TH
Differential Input High Threshold V
CM
=
+1.2V +100 mV
V
TL
Differential Input Low Threshold −100 mV
I
IN
Input Current V
IN
=
+2.4V, V
CC
=
5.0V
±
10 µA
V
IN
=
0V, V
CC
=
5.0V
±
10 µA
TRANSMITTER SUPPLY CURRENT
I
CCTW
Transmitter Supply Current R
L
=
100,C
L
=
5 pF, f=32.5 MHz 49 63 mA
Worst Case Worst Case Pattern f=37.5 MHz 51 64 mA
(
Figure 1
and
Figure 2
)f=66 MHz 70 84 mA
I
CCTZ
Transmitter Supply Current Powerdown=Low Power Down Driver Outputs in TRI-STATE under
Powerdown Mode
12A
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PrintDate=1998/01/07 PrintTime=09:53:21 28561 ds012888 Rev. No. 5 cmserv Proof 3
Electrical Characteristics (Continued)
Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Units
RECEIVER SUPPLY CURRENT
I
CCRW
Receiver Supply Current C
L
=
8 pF, f=32.5 MHz 64 77 mA
Worst Case Worst Case Pattern f=37.5 MHz 70 85 mA
(
Figure 1
and
Figure 3
)f=66 MHz 110 140 mA
I
CCRZ
Receiver Supply Current Powerdown=Low Power Down Receiver Outputs in Previous State during
Power Down Mode.
11A
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation.
Note 2: Typical values are given for V
CC
=
5.0V and T
A
=
+25˚C.
Note 3: Current into device pins is defined as positive. Current out of device pins is defined as negative. Voltages are referenced to ground unless otherwise speci­fied (except V
OD
and VOD).
Note 4: ESD Rating: HBM (1.5 k, 100 pF)
PLL V
CC
1000V All Other Pins 2000V EIAJ (0, 200 pF) 150V
Note 5: V
OS
previously referred as VCM.
Transmitter Switching Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified
Symbol Parameter Min Typ Max Units
LLHT LVDS Low-to-High Transition Time (
Figure 2
) 0.75 1.5 ns
LHLT LVDS High-to-Low Transition Time (
Figure 2
) 0.75 1.5 ns
TCIT TxCLK IN Transition Time (
Figure 4
)8ns
TCCS TxOUT Channel-to-Channel Skew (Note 6) (
Figure 5
) 350 ps
TPPos0 Transmitter Output Pulse Position for Bit 0 (
Figure 16
)
f=66 MHz
−0.30 0 0.30 ns TPPos1 Transmitter Output Pulse Position for Bit 1 1.70 (1/7)Tclk 2.50 ns TPPos2 Transmitter Output Pulse Position for Bit 2 3.60 (2/7)Tclk 4.50 ns TPPos3 Transmitter Output Pulse Position for Bit 3 5.90 (3/7)Tclk 6.75 ns TPPos4 Transmitter Output Pulse Position for Bit 4 8.30 (4/7)Tclk 9.00 ns TPPos5 Transmitter Output Pulse Position for Bit 5 10.40 (5/7)Tclk 11.10 ns TPPos6 Transmitter Output Pulse Position for Bit 6 12.70 (6/7)Tclk 13.40 ns TCIP TxCLK IN Period (
Figure 6
) 15 T 50 ns
TCIH TxCLK IN High Time (
Figure 6
) 0.35T 0.5T 0.65T ns
TCIL TxCLK IN Low Time (
Figure 6
) 0.35T 0.5T 0.65T ns
TSTC TxIN Setup to TxCLK IN (
Figure 6
) 5 3.5 ns
THTC TxIN Hold to TxCLK IN (
Figure 6
) 2.5 1.5 ns
TCCD TxCLK IN to TxCLK OUT Delay
@
25˚C, V
CC
=
5.0V (
Figure 8
) 3.5 8.5 ns
TPLLS Transmitter Phase Lock Loop Set (
Figure 10
)10ms
TPDD Transmitter Powerdown Delay (
Figure 14
) 100 ns
Note 6: This limit based on bench characterization.
Receiver Switching Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified
Symbol Parameter Min Typ Max Units
CLHT CMOS/TTL Low-to-High Transition Time (
Figure 3
) 2.5 4.0 ns
CHLT CMOS/TTL High-to-Low Transition Time (
Figure 3
) 2.0 4.0 ns
RSKM RxIN Skew Margin (Note 7) V
CC
=
5V,T
A
=
25˚C(
Figure 17
)f=40 MHz 700 ps
f=66 MHz 600 ps
PrintDate=1998/01/07 PrintTime=09:53:21 28561 ds012888 Rev. No. 5 cmserv Proof 4
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Receiver Switching Characteristics (Continued)
Over recommended operating supply and temperature ranges unless otherwise specified
Symbol Parameter Min Typ Max Units
RCOP RxCLK OUT Period (
Figure 7
) 15 T 50 ns
RCOH RxCLK OUT High Time (
Figure 7
)f
=
40 MHz 6 ns
f=66 MHz 4.3 5 ns
RCOL RxCLK OUT Low Time (
Figure 7
)f
=
40 MHz 10.5 ns
f=66 MHz 7.0 9 ns
RSRC RxOUT Setup to RxCLK OUT (
Figure 7
)f
=
40 MHz 4.5 ns
f=66 MHz 2.5 4.2 ns
RHRC RxOUT Hold to RxCLK OUT (
Figure 7
)f
=
40 MHz 6.5 ns
f=66 MHz 4 5.2 ns
RCCD RxCLK IN to RxCLK OUT Delay
@
25˚C, V
CC
=
5.0V (
Figure 9
) 6.4 10.7 ns
RPLLS Receiver Phase Lock Loop Set (
Figure 11
)10ms
RPDD Receiver Powerdown Delay (
Figure 15
)1µs
Note 7: Receiver Skew Margin is defined as the valid data sampling region atthe receiver inputs. Thismargin takes into account for transmitter outputskew (TCCS) and the setup and hold time (internal data sampling window), allowing LVDS cable skew dependent on type/length and source clock (TxCLK IN) jitter.
RSKM cable skew (type, length) + source clock jitter (cycle to cycle)
AC Timing Diagrams
DS012888-2
FIGURE 1. “Worst Case” Test Pattern
DS012888-3
DS012888-4
FIGURE 2. DS90CR213 (Transmitter) LVDS Output Load and Transition Times
DS012888-5
DS012888-6
FIGURE 3. DS90CR214 (Receiver) CMOS/TTL Output Load and Transition Times
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PrintDate=1998/01/07 PrintTime=09:53:21 28561 ds012888 Rev. No. 5 cmserv Proof 5
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