DS26S10
Quad Bus Transceiver
General Description
The DS26S10 is a quad Bus Transceiverconsistingof4high
speed bus drivers with open-collector outputs capable of
sinking 100 mA at 0.8V and 4 high speed bus receivers.
Each driver output is connected internally to the high speed
bus receiver in addition to being connected to the package
pin. The receiver has a Schottky TTL output capable of driving 10 Schottky TTL unit loads.
An active low enable gate controls the 4 drivers so that outputs of different device drivers can be connected togetherfor
party-line operation.
The bus output high-drive capability in the low state allows
party-line operation with a line impedance as low as 100Ω.
The line can be terminated at both ends, and still give considerable noise margin at the receiver. The receiver typical
switching point is 2V.
Logic Diagrams
The DS26S10 features advanced Schottky processing to
minimize propagation delay. The device package also has 2
ground pins to improve ground current handling and allow
close decoupling between V
Both GND 1 and GND 2 should be tied to the ground bus external to the device package.
and ground at the package.
CC
Features
n Input to bus is inverting on DS26S10
n Quad high speed open-collector bus transceivers
n Driver outputs can sink 100 mA at 0.8V maximum
n Advanced Schottky processing
n PNP inputs to reduce input loading
DS2610
DS26S10 Quad Bus Transceiver
May 1999
DS005802-1
© 1999 National Semiconductor Corporation DS005802 www.national.com
Absolute Maximum Ratings (Note *NO
TARGET FOR FNXref NS859*)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Storage Temperature −65˚C to +150˚C
Temperature (Ambient) Under Bias −55˚C to +125˚C
Supply Voltage to Ground Potential −0.5V to +7V
DC Voltage Applied to Outputs for −0.5V to +V
High Output State
DC Input Voltage −0.5V to +5.5V
Output Current, Into Bus 200 mA
Output Current, Into Outputs
(Except Bus) 30 mA
Max
CC
DC Input Current −30 mA to +5 mA
Maximum Power Dissipation (Note 1) at 25˚C
Molded Package 1362 mW
Operating Conditions
Min Max Units
Supply Voltage (V
DS26S10 4.75 5.25 V
Temperature (T
DS26S10 0 +70 ˚C
Note 1: Derate cavitypackage9.6 mW/˚C above 25˚C; derate molded package 10.9 mW/˚C above 25˚C, derate PLCC package TBD mW/˚C above
25˚C.
)
CC
)
A
Electrical Characteristics
(Unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
(Note 2) (Note 3)
V
OH
Output High Voltage V
(Receiver Outputs) V
V
OL
Output Low Voltage V
(Receiver Outputs) V
V
IH
Input High Level Guaranteed Input Logical High for 2.0 V
=
CC
=
V
IN
=
CC
=
V
IN
(Except Bus) All Inputs
V
IL
Input Low Level Guaranteed Input Logical Low for 0.8 V
(Except Bus) All Inputs
V
I
Input Clamp Voltage V
=
CC
(Except Bus)
I
IL
Input Low Current V
=
CC
(Except Bus) Data −0.54 mA
I
IH
Input High Current V
=
CC
(Except Bus) Data 30 µA
I
I
Input High Current V
=
CC
(Except Bus)
I
SC
Output Short-Circuit Current V
=
CC
(Except Bus) Commercial −18 −60 mA
I
CCL
Power Supply Current V
=
CC
(All Bus Outputs Low) DS26S11 80 mA
=
Min, I
IL
Min, I
IL
Min, I
Max, V
Max, V
Max, V
−1 mA, Military 2.5 3.4 V
OH
or V
IH
=
20 mA, 0.5 V
OL
or V
IH
=
−18 mA −1.2 V
IN
=
0.4V Enable −0.36 mA
IN
=
2.7V Enable 20 µA
IN
=
5.5V 100 µA
IN
Commercial 2.7 3.4 V
Max, (Note 4) Military −20 −55 mA
Max, Enable=GND DS26S10 45 70 mA
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Connection Diagram
Dual-In-Line Package
DS005802-3
Top View
Order Number DS26S10N
See NS Package Number N16A
Plastic Chip Carrier
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