NSC DS26LV31TMX, DS26LV31TM Datasheet

DS26LV31T
3V Enhanced CMOS Quad Differential Line Driver

General Description

The DS26LV31T is a high-speed quad differential CMOS
driver that meets the requirements of both TIA/EIA-422-B
and ITU-T V.11. The CMOS DS26LV31T features low static
I

CC

of 100 µA MAX which makes it ideal for battery powered

and power conscious applications.
Differential outputs have the same V

OD

guarantee (≥2V) as

the 5V version.
The EN and EN* inputs allow active Low or active High con-

trol of the TRI-STATE

®

outputs. The enables are common to
all four drivers. Protection diodes protect all the driver inputs
against electrostatic discharge. Outputs have enhanced
ESD protection providing greater than 7 kV tolerance. The
driver and enable inputs (DI, EN, EN*) are compatible with
low voltage LVTTL and LVCMOS devices.

Features

n Industrial product meets TIA/EIA-422-B (RS-422) and

ITU-T V.11 recommendation

n Military product conforms to TIA/EIA-422-B (RS-422)
n Interoperable with existing 5V RS-422 networks
n Industrial and Military temperature range
n Guaranteed V

OD

of 2V min over operating conditions

n Balanced output crossover for low EMI (typical within

40 mV of 50%voltage level)

n Low power design (330 µW 3.3V static)
n ESD ≥ 7 kV on cable I/O pins (HBM)
n Guaranteed AC parameter:

— Maximum driver skew: 2 ns
— Maximum transition time: 10 ns

n Pin compatible with DS26C31
n Available in SOIC and Cerpack packaging
n Standard Microcircuit Drawing (SMD) 5962-98584

Connection Diagram Truth Table

Enables Input Outputs

EN EN* DI DO+ DO−

LHXZZ

All other

combinations of

enable inputs

LLH
HHL

L = Low logic state
X = Irrelevant
H = High logic state
Z = TRI-STATE

TRI-STATE®is a registered trademark of National Semiconductor Corporation.

Dual-In-Line Package

DS012642-1

Top View

Order Number DS26LV31TM or DS26LV31W

See NS Package Number M16A or W16A

March 1999

DS26LV31T 3V Enhanced CMOS Quad Differential Line Driver

© 1999 National Semiconductor Corporation DS012642 www.national.com

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Supply Voltage (V

CC

) −0.5V to +7V

Enable Input Voltage (EN, EN*) −0.5V to V

CC

+ 0.5V

Driver Input Voltage (DI) −0.5V to V

CC

+ 0.5V

Clamp Diode Current

±

20 mA

DC Output Current, per pin

±

150 mA

Driver Output Voltage

(Power Off: DO+, DO−) −0.5V to +7V

Maximum Package Power Dissipaton +25˚C

M Package 1226 mW

W Package 1119 mW
Derate M Package 9.8 mW/˚C above +25˚C
Derate W Package 7.5 mW/˚C above +25˚C

Storage Temperature Range −65˚C to +150˚C

Lead Temperature Range
Soldering

(4 sec.) +260˚C
ESD Ratings (HBM, 1.5 kΩ, 100

pF)

Driver Outputs ≥7kV
Other Pins ≥2.5 kV

Recommended Operating
Conditions

Min Typ Max Units

Supply Voltage (V

CC

) 3.0 3.3 3.6 V

Operating Free Air Temperature Range (T

A

)
DS26LV31T −40 +25 +85 ˚C
DS26LV31W −55 +25 +125 ˚C

Input Rise and Fall Time 500 ns

Electrical Characteristics(Note 2) (Note 3)

Over supply voltage and operating temperature ranges, unless otherwise specified

Symbol Parameter Conditions Pin Min Typ Max Units

V

OD1

Output Differential Voltage RL=∞(No Load) DO+, 3.3 4 V

V

OD2

Output Differential Voltage RL= 100Ω (

Figure 1

) DO− 2 2.6 V

∆V

OD2

Change in Magnitude of IO≥ 20 mA −400 7 400 mV
Output Differential Voltage

V

OD3

Output Differential Voltage RL= 3900Ω (V.11)

Figure 1

(Note 7)

3.2 3.6 V

V

OC

Common Mode Voltage RL= 100Ω (

Figure 1

) 1.5 2 V

∆V

OC

Change in Magnitude of −400 6 400 mV
Common Mode Voltage

I

OZ

TRI-STATE Leakage V

OUT=VCC

or GND

±

0.5

±

20 µA

Current Drivers Disabled

I

SC

Output Short Circuit Currrent V

OUT

=0V

V

IN=VCC

or

GND (Note 4)

T

A

= -40˚C to

+85˚C

−40 −70 −150 mA

T

A

= -55˚C to

+125˚C (Note

10)

-30 -160 mA

I

OFF

Output Leakage Current VCC= 0V, V

OUT

= 3V or 6V 0.03 100 µA

V

CC

= 0V, V

OUT

= −0.25V

T

A

= -40˚C to

+85˚C

−0.08 −100 µA

T

A

= -55˚C to

+125˚C

-200 µA

V

IH

High Level Input Voltage DI, 2.0 V

CC

V

V

IL

Low Level Input Voltage EN, GND 0.8 V

I

IH

High Level Input Current VIN=V

CC

EN* 10 µA

I

IL

Low Level Input Current VIN= GND −10 µA

V

CL

Input Clamp Voltage IIN= −18 mA −1.5 V

I

CC

Power Supply Current No Load, V

IN

(all) = VCCor
GND

T

A

= -40˚C to

+85˚C

V

CC

100 µA

T

A

= -55˚C to

+125˚C

125 µA

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Switching Characteristics - Industrial (Note 5) (Note 6)

Over supply voltage and -40˚C to +85˚C operating temperature range, unless otherwise specified

Sym Parameter Conditions Min Typ Max Units

t

PHLD

Differential Propagation Delay RL= 100Ω,CL= 50 pF 6 10.5 16 ns
High to Low (

Figures 2, 3

)

t

PLHD

Differential Propagation Delay 6 11 16 ns
Low to High

t

SKD

Differential Skew (same 0.5 2.0 ns
channel) |t

PHLD−tPLHD

|

t

SK1

Skew, Pin to Pin 1.0 2.0 ns
(same device)

t

SK2

Skew, Part to Part (Note 8) 3.0 5.0 ns

t

TLH

Differential Transition Time 4.2 10 ns
Low to High (20%to 80%)

t

THL

Differential Transition Time 4.7 10 ns
High to Low (80%to 20%)

t

PHZ

Disable Time High to Z (

Figures 4, 5

)1220ns

t

PLZ

Disable Time Low to Z 9 20 ns

t

PZH

Enable Time Z to High 22 32 ns

t

PZL

Enable Time Z to Low 22 32 ns

f

max

Maximum Operating 32 MHz
Frequency (Note 9)

Switching Characteristics - Military (Note 5) (Note 6)

Over supply voltage and -55˚C to +125˚C operating temperature range, unless otherwise specified

Sym Parameter Conditions Min Max Units

t

PHLD

Differential Propagation Delay RL= 100Ω,CL=50pF 5 25 ns
High to Low (

Figures 2, 3

)

t

PLHD

Differential Propagation Delay 5 25 ns
Low to High

t

SKD

Differential Skew (same 5.0 ns
channel) |t

PHLD−tPLHD

|

t

SK1

Skew, Pin to Pin 5.0 ns
(same device)

t

PHZ

Disable Time High to Z (

Figures 4, 5

)35ns

t

PLZ

Disable Time Low to Z 35 ns

t

PZH

Enable Time Z to High 40 ns

t

PZL

Enable Time Z to Low 40 ns

Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.

Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except differential volt­ages V

OD1,VOD2,VOD3

.

Note 3: All typicals are given for V

CC

= +3.3V, TA= +25˚C.

Note 4: Only one output shorted at a time. The output (true or complement) is configured High.
Note 5: f = 1 MHz, t

r

and tf≤ 6 ns, 10%to 90%.

Note 6: See TIA/EIA-422-B specifications for exact test conditions.
Note 7: This specification limit is for compliance with TIA/EIA-422-B and ITU-T V.11.
Note 8: Devices are at the same V

CC

and within 5˚C within the operating temperature range

Note 9: All channels switching, output duty cycle criteria is 40%/60%measured at 50%. This parameter is guaranteed by design and characterization.
Note 10: This parameter does not meet the TIA/EIA-422-B specification.

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