NSC DS26F32MDS, DS26F32MD8, DS26F32MWF-QML, DS26F32MW8, DS26F32MJF-QML Datasheet

DS26F32M
Quad Differential Line Receivers

General Description

The DS26F32 is a quad differential line receiver designed to
meet the requirements of EIA Standards RS-422 and
RS-423, andFederalStandards 1020 and 1030 for balanced
and unbalanced digital data transmission.

The DS26F32 offers improved performance due to the use
of state-of-the-art L-FAST bipolar technology. The L-FAST
technology allows for higher speeds and lower currents by
utilizing extremely short gate delay times. Thus, the
DS26F32 features lower power, extended temperature
range, and improved specifications.

The device features an input sensitivity of 200 mV over the
input common mode range of

±

7.0V.The DS26F32 provides
an enable function common to all four receivers and
TRI-STATE

®

outputs with 8.0 mA sink capability. Also, a
fail-safe input/output relationship keeps the outputs high
when the inputs are open.

The DS26F32 offers optimum performance when used with
the DS26F31 Quad Differential Line Driver.

Features

n Military temperature range
n Input voltage range of

±

7.0V (differential or common

mode)

±

0.2V sensitivity over the input voltage range

n Meets all the requirements of EIA standards RS-422 and

RS-423

n High input impedance (18k typical)
n 30 mV input hysteresis
n Operation from single +5.0V supply
n Input pull-down resistor prevents output oscillation on

unused channels

n TRI-STATE outputs, with choice of complementary

enables, for receiving directly onto a data bus

n Propagation delay 15 ns typical

Connection Diagrams

Function Table

(Each Receiver)

Differential Inputs Enables Outputs

V

ID

=

(V

IN

+)−(VIN−) E E OUT

V

ID

≥ 0.2V H X H

XL H

V

ID

≤ −0.2V H X L

XL L

XLHZ

H

=

High Level
L=Low Level
X=Immaterial

TRI-STATE®is a registered trademark of National Semiconductor Corporation.

16-Lead DIP

DS009615-1

Top View

See NS Package Number J16A

For Complete Military Product Specifications,

refer to the appropriate SMD or MDS.

Order Number DS26F32ME/883,

DS26F32MJ/883 or DS26F32MW/883

See NS Package Number E20A, J16A or W16A

20-Lead Ceramic Leadless Chip Carrier

DS009615-7

May 1999

DS26F32MQuad Differential Line Receivers

© 1999 National Semiconductor Corporation DS009615 www.national.com

Absolute Maximum Ratings (Note 2)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Storage Temperature Range

Ceramic DIP −65˚C + to 175˚C

Operating Temperature Range

DS26F32M −55˚C to +125˚C
DS26F32C 0˚C to +70˚C

Lead Temperature

Ceramic DIP (soldering, 60

sec) 300˚C

Maximum Power Dissipation (Note 1) at 25˚C

Cavity Package 1500 mW
Supply Voltage 7.0V
Common Mode Voltage Range

±

25V

Differential Input Voltage

±

25V
Enable Voltage 7.0V
Output Sink Current 50 mA

Operating Range

DS26F32M

Temperature −55˚C to +125˚C
Supply Voltage 4.5V to 5.5V

Note 1: Derate cavity package 10 mW/˚C above 25˚C.

Electrical Characteristics (Notes 3, 4)

Over operating range, unless otherwise specified

Symbol Parameter Conditions Min Typ Max Units

V

TH

Differential Input Voltage −7.0V ≤ VCM≤ +7.0V, −0.2

±

0.06 +0.2 V

V

O

=

V

OL

or V

OH

R

I

Input Resistance −15V ≤ VCM≤ +15V, 14 18 kΩ

One Input AC Ground

I

I

Input Current (under Test) V

I

=

+15V, 2.3

Other Input −15V ≤ V

I

≤ +15V mA

V

I

=

−15V, −2.8

Other Input −15V ≤ V

I

≤ +15V

V

OH

Output Voltage HIGH V

CC

=

Min, 0˚C to +70˚C 2.8 3.4

∆V

I

=

+1.0V, V

V

ENABLE

=

0.8V,

−55˚C to +125˚C 2.5 3.4

I

OH

=

−440 µA

V

OL

Output Voltage LOW V

CC

=

Min, I

OL

=

4.0 mA 0.4

∆V

I

=

−1.0V, I

OL

=

8.0 mA 0.45 V

V

ENABLE

=

0.8V

V

IL

Enable Voltage LOW 0.8 V

V

IH

Enable Voltage HIGH 2.0 V

V

IC

Enable Clamp Voltage V

CC

=

Min, I

I

=

−18 mA −1.5 V

I

OZ

Off State (High Impedance) V

CC

=

Max V

O

=

2.4V 20 µA

Output Current V

O

=

0.4V −20

I

IL

Enable Current LOW V

I

=

0.4V −0.2 −0.36 mA

I

IH

Enable Current HIGH V

I

=

2.7V 0.5 10 µA

I

I

Enable Input High Current V

I

=

5.5V 1.0 50 µA

I

OS

Output Short Circuit Current V

O

=

0V, V

CC

=

Max, (Note 5) −15 −50 −85 mA

∆V

I

=

+1.0V

I

CC

Supply Current V

CC

=

Max, All V

I

=

GND, 30 50 mA

Outputs Disabled

V

HYST

Input Hysteresis T

A

=

25˚C, V

CC

=

5.0V, V

CM

=

0V 30 mV

Note 2: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The tables of “Electrical Characteristics” provide conditions for actual device operation.

Note 3: Unless otherwise specified min/max limits apply across the −55˚C to +125˚C temperature range for the DS26F32M and across the 0˚C to +70˚C range for
the DS26F32C. All typicals are given for V

CC

=

5V and T

A

=

25˚C.

Note 4: All currents into the device pins are positive; all currents out of the device pins are negative. All voltages are reference to ground unless otherwise specified.
Note 5: Only one output at a time should be shorted.

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