NSC DS26C32ATN, DS26C32ATMX, DS26C32ATMWC, DS26C32ATM Datasheet

DS26C32AT/DS26C32AM Quad Differential Line Receiver

General Description

The DS26C32A is a quad differential line receiver designed to meet the RS-422, RS-423, and Federal Standards 1020 and 1030for balanced and unbalanced digital data transmission, while retaining the low power characteristics of CMOS.

The DS26C32A has an input sensitivity of 200 mV over the common mode input voltage range of

±

7V. The DS26C32A features internal pull-up and pull-down resistors which prevent output oscillation on unused channels.

The DS26C32A provides an enable and disable function common to all fourreceivers, and features TRI-STATE

®

outputs with 6 mAsource and sink capability. This product ispin compatible with the DS26LS32A and the AM26LS32.

Features

n CMOS design for low power

n

±

0.2V sensitivity over input common mode voltage

range

n Typical propagation delays: 19 ns n Typical input hysteresis: 60 mV n Inputs won’t load line when V

CC

=

0V

n Meets the requirements of EIA standard RS-422 n TRI-STATE outputs for connection to system buses n Available in Surface Mount n Mil-Std-883C compliant

Logic Diagram

Connection Diagrams

TRI-STATE®is a registered trademark of National Semiconductor Corporation.

DS008764-1

Dual-In-Line Package

DS008764-2

Top View

Order Number DS26C32ATM or DS26C32ATN

See NS Package M16A or N16E

For Complete Military Product Specifications,

refer to the appropriate SMD or MDS.

Order Number DS26C32AME/883, DS26C32AMJ/883 or

DS26C32AMW/883

See NS Package E20A, J16A or W16A

20-Lead Ceramic Leadless Chip Carrier

DS008764-12

June 1998

DS26C32AT/DS26C32AM Quad Differential Line Receiver

Absolute Maximum Ratings (Notes 2, 1)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.

Supply Voltage (V

CC

)7V

Common Mode Range (V

CM

)

±

14V

Differential Input Voltage (V

DIFF

)

±

14V

Enable Input Voltage (V

IN

)7V

Storage Temperature Range (T

STG

) −65˚C to +150˚C

Lead Temperature (Soldering 4 sec.) 260˚C

Maximum Power Dissipation at 25˚C (Note 5)

Ceramic “J” Pkg. 2308 mW Plastic “N” Pkg. 1645 mW SOIC “M” Pkg. 1190 mW

Ceramic “E” Pkg. 2108 mW Ceramic “W” Pkg. 1215 mW

Maximum Current Per Output

±

25 mA

This device does not meet 2000V ESD rating. (Note 4)

Operating Conditions

Min Max Units

Supply Voltage (V

CC

) 4.50 5.50 V

Operating Temperature Range (T

A

) DS26C32AT −40 +85 ˚C DS26C32AM −55 +125 ˚C

Enable Input Rise or Fall Times 500 ns

DC Electrical Characteristics

V

CC

=

5V

±

10%(unless otherwise specified) (Note 1)

Symbol Parameter Conditions Min Typ Max Units

V

TH

Minimum Differential V

OUT

=

V

OH

or V

OL

−200 35 +200 mV

Input Voltage −7V

<

V

CM

<

+7V

R

IN

Input Resistance V

IN

=

−7V, +7V DS26C32AT 5.0 6.8 10 kΩ

(Other Input=GND) DS26C32AM 4.5 6.8 11 kΩ

I

IN

Input Current V

IN

=

+10V, DS26C32AT +1.1 +1.5 mA Other Input=GND DS26C32AM +1.1 +1.8 mA V

IN

=

−10V, DS26C32AT −2.0 −2.5 mA

Other Input=GND DS26C32AM −2.0 −2.7 mA

V

OH

Minimum High Level V

CC

=

Min, V

DIFF

=

+1V 3.8 4.2 V

Output Voltage I

OUT

=

−6.0 mA

V

OL

Maximum Low Level V

CC

=

Max, V

DIFF

=

−1V 0.2 0.3 V

Output Voltage I

OUT

=

6.0 mA

V

IH

Minimum Enable High 2.0 V Input Level Voltage

V

IL

Maximum Enable Low 0.8 V Input Level Voltage

I

OZ

Maximum TRI-STATE

®

V

OUT

=

V

CC

or GND,

Output Leakage Current ENABLE=V

IL

,

±

0.5

±

5.0 µA

ENABLE=V

IH

I

Maximum Enable Input V

IN

=

V

CC

or GND

±

1.0 µA

Current

I

CC

Quiescent Power V

CC

=

Max, DS26C32AT 16 23 mA

Supply Current V

DIF

=

+1V DS26C32AM 16 25 mA

V

HYST

Input Hysteresis V

CM

=

0V 60 mV

AC Electrical Characteristics

V

CC

=

5V

±

10%(Note 3)

Symbol Parameter Conditions Min Typ Max Units

DS26C32AT DS26C32AM

t

PLH

, Propagation Delay C

L

=

50 pF

t

PHL

Input to Output V

DIFF

=

2.5V 10 19 30 35 ns

V

CM

=

0V

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AC Electrical Characteristics (Continued)

V

CC

=

5V

±

10%(Note 3)

Symbol Parameter Conditions Min Typ Max Units

DS26C32AT DS26C32AM

t

RISE

, Output Rise and C

L

=

50 pF

t

FALL

Fall Times V

DIFF

=

2.5V 4 9 9 ns

V

CM

=

0V

t

PLZ

, Propagation Delay C

L

=

50 pF

t

PHZ

ENABLE to Output R

L

=

1000Ω 13 22 29 ns

V

DIFF

=

2.5V

t

PZL

, Propagation Delay C

L

=

50 pF

t

PZH

ENABLE to Output R

L

=

1000Ω 13 23 29 ns

V

DIFF

=

2.5V

Note 1: Absolute Maximum Ratings are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.

Note 2: Unless otherwise specified, all voltages are referenced to ground. Note 3: Unless otherwise specified, Min/Max limits apply over recommended operating conditions. All typicals are given for V

CC

=

5V and T

A

=

25˚C.

Note 4: ESD Rating: HBM (1.5 kΩ, 100 pF)

Inputs ≥2000V All other pins ≥1000V EIAJ (0Ω, 200 pF) ≥350V

Note 5: Ratings apply toambient temperature at25˚C. Above this temperature derate NPackage 13.16 mW/˚C, J Package 15.38 mW/˚C, M Package 9.52 mW/˚C, E Package 12.04 mW/˚C, and W package 6.94 mW/˚C.

Comparison Table of Switching Characteristics into “LS-Type” Load

(

Figures 4, 5, 6

) (Note 6)

Symbol Parameter Conditions DS26C32A DS26LS32A Units

Typ Typ

t

PLH

Input to Output C

L

=

15 pF 17 23 ns

t

PHL

19 23 ns

t

LZ

ENABLE to Output C

L

=

5pF 13 15 ns

t

HZ

12 20 ns

t

ZL

ENABLE to Output C

L

=

15 pF 13 14 ns

t

ZH

13 15 ns

Note 6: This table is provided for comparison purposes only.The values in this table for the DS26C32A reflect the performance of the device, but are not tested or guaranteed.

Test and Switching Waveforms

DS008764-3

FIGURE 1. Propagation Delay

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