TL/F/9500
54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs
November 1994
54F/74F219
64-Bit Random Access Memory with TRI-STATE
É
Outputs
General Description
The ’F219 is a high-speed 64-bit RAM organized as a
16-word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are
TRI-STATE and are in the high-impedance state whenever
the Chip Select (CS
) input is HIGH. The outputs are active
only in the Read mode. This device is similar to the ’F189
but features non-inverting, rather than inverting, data outputs.
Features
Y
TRI-STATE outputs for data bus applications
Y
Buffered inputs minimize loading
Y
Address decoding on-chip
Y
Diode clamped inputs minimize ringing
Y
Available in SOIC (300 mil only)
Commercial Military
Package
Package Description
Number
74F219PC N16E 16-Lead (0.300×Wide) Molded Dual-In-Line
54F219DL (Note 2) J16A 16-Lead Ceramic Dual-In-Line
74F219SC (Note 1) M16B 16-Lead (0.300×Wide) Molded Small Outline, JEDEC
74F219SJ (Note 1) M16D 16-Lead (0.300×Wide) Molded Small Outline, EIAJ
54F219FL (Note 2) W16A 16-Lead Cerpack
54F219LL (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier, Type C
Note 1: Devices also available in 13×reel. Use suffixeSCX and SJX.
Note 2: Military grade device with environmental and burn-in processing. Use suffix
e
DLQB, FLQB and LLQB.
Logic Symbol
TL/F/9500– 1
Connection Diagrams
Pin Assignment for
DIP, SOIC and Flatpak
TL/F/9500– 2
Pin Assignment
for LCC
TL/F/9500– 3
TRI-STATEÉis a registered trademark of National Semiconductor Corporation.
C
1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
Unit Loading/Fan Out
54F/74F
Pin Names Description
U.L. Input I
IH/IIL
HIGH/LOW Output IOH/I
OL
A0–A
3
Address Inputs 1.0/1.0 20 mA/b0.6 mA
CS
Chip Select Input (Active LOW) 1.0/2.0 20 mA/b1.2 mA
WE
Write Enable Input (Active LOW) 1.0/1.0 20 mA/b0.6 mA
D0–D
3
Data Inputs 1.0/1.0 20 mA/b0.6 mA
O
0–O3
TRI-STATE Data Outputs 150/40 (33.3)
b
3 mA/24 mA (20 mA)
Function Table
Inputs
Operation Condition of Outputs
CS WE
L L Write High Impedance
L H Read True Stored Data
H X Inhibit High Impedance
HeHIGH Voltage Level
L
e
LOW Voltage Level
X
e
Immaterial
Block Diagram
TL/F/9500– 4
2
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Storage Temperature
b
65§Ctoa150§C
Ambient Temperature under Bias
b
55§Ctoa125§C
Junction Temperature under Bias
b
55§Ctoa175§C
Plastic
b
55§Ctoa150§C
V
CC
Pin Potential to
Ground Pin
b
0.5V toa7.0V
Input Voltage (Note 2)
b
0.5V toa7.0V
Input Current (Note 2)
b
30 mA toa5.0 mA
Voltage Applied to Output
in HIGH State (with V
CC
e
0V)
Standard Output
b
0.5V to V
CC
TRI-STATE Output
b
0.5V toa5.5V
Current Applied to Output
in LOW State (Max) twice the rated I
OL
(mA)
Note 1: Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under
these conditions is not implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
Recommended Operating
Conditions
Free Air Ambient Temperature
Military
b
55§Ctoa100§C
Commercial 0
§
Ctoa70§C
Supply Voltage
Military
a
4.5V toa5.5V
Commercial
a
4.5V toa5.5V
DC Electrical Characteristics
Symbol Parameter
54F/74F
Units V
CC
Conditions
Min Typ Max
V
IH
Input HIGH Voltage 2.0 V Recognized as a HIGH Signal
V
IL
Input LOW Voltage 0.8 V Recognized as a LOW Signal
V
CD
Input Clamp Diode Voltage
b
1.2 V Min I
IN
eb
18 mA
V
OH
Output HIGH 54F 10% V
CC
2.5 I
OH
eb
1mA
Voltage 54F 10% V
CC
2.4 I
OH
eb
3mA
74F 10% V
CC
2.5
V Min
I
OH
eb
1mA
74F 10% V
CC
2.4 I
OH
eb
3mA
74F 5% V
CC
2.7 I
OH
eb
1mA
74F 5% V
CC
2.7 I
OH
eb
3mA
V
OL
Output LOW 54F 10% V
CC
0.5
V Min
I
OL
e
20 mA
Voltage 74F 10% V
CC
0.5 I
OL
e
24 mA
I
IH
Input HIGH 54F 20.0
mA Max
V
IN
e
2.7V
Current 74F 5.0
I
BVI
Input HIGH Current 54F 100
mA Max
V
IN
e
7.0V
Breakdown Test 74F 7.0
I
CEX
Output HIGH 54F 250
mA Max
V
OUT
e
V
CC
Leakage Current 74F 50
V
ID
Input Leakage
74F 4.75 V 0.0
I
ID
e
1.9 mA
Test All Other Pins Grounded
I
OD
Output Leakage
74F 3.75 mA 0.0
V
IOD
e
150 mV
Circuit Current All Other Pins Grounded
I
IL
Input LOW
b
0.6
mA Max
V
IN
e
0.5V (An,WE,Dn)
Current
b
1.2 V
IN
e
0.5V (CS)
I
OZH
Output Leakage Current 50 mA Max V
OUT
e
2.7V
I
OZL
Output Leakage Current
b
50 mA Max V
OUT
e
0.5V
I
OS
Output Short-Circuit Current
b
60
b
150 mA Max V
OUT
e
0V
I
ZZ
Bus Drainage Test 500 mA 0.0V V
OUT
e
5.25V
I
CC
Power Supply Current 37 55 mA Max
3
AC Electrical Characteristics
74F 54F 74F
T
A
ea
25§CT
A
ea
100§C
T
A,VCC
e
Com
Symbol Parameter V
CC
ea
5.0V V
CC
e
Mil
C
L
e
50 pF
Units
C
L
e
50 pF C
L
e
50 pF
Min Typ Max Min Max Min Max
t
PLH
Access Time, HIGH or LOW 10.0 18.5 26.0 9.0 32.0 10.0 27.0
ns
t
PHL
Anto O
n
8.0 13.5 19.0 8.0 23.0 8.0 20.0
t
PZH
Access Time, HIGH or LOW 3.5 6.0 8.5 3.5 10.5 3.5 9.5
t
PZL
CS to O
n
5.0 9.0 13.0 5.0 15.0 5.0 14.0
ns
t
PHZ
Disable Time, HIGH or LOW 2.0 4.0 6.0 2.0 8.0 2.0 7.0
t
PLZ
CS to O
n
3.0 5.5 8.0 2.5 10.0 3.0 9.0
t
PZH
Write Recovery Time 6.5 20.0 28.0 6.5 37.5 6.5 29.0
t
PZL
HIGH or LOW, WE to O
n
6.5 11.0 15.5 6.5 17.5 6.5 16.5
ns
t
PHZ
Disable Time, HIGH or LOW 4.0 7.0 10.0 3.5 12.0 4.0 11.0
t
PLZ
WE to O
n
5.0 9.0 13.0 5.0 15.0 5.0 14.0
AC Operating Requirements
74F 54F 74F
Symbol Parameter
T
A
ea
25§CT
A
ea
100§C
T
A,VCC
e
Com Units
V
CC
ea
5.0V V
CC
e
Mil
Min Max Min Max Min Max
ts(H) Setup Time, HIGH or LOW 0 0 0
t
s
(L) Anto WE 000
ns
th(H) Hold Time, HIGH or LOW 2.0 2.0 2.0
t
h
(L) Anto WE 2.0 2.0 2.0
ts(H) Setup Time, HIGH or LOW 10.0 11.0 10.0
t
s
(L) Dnto WE 10.0 11.0 10.0
ns
th(H) Hold Time, HIGH or LOW 0 2.0 0
t
h
(L) Dnto WE 0 2.0 0
ts(L) Setup Time, LOW
000
CS
to WE
ns
th(L) Hold Time, LOW
6.0 7.5 6.0
CS
to WE
tw(L) WE Pulse Width, LOW 6.0 15.0 6.0 ns
4
Ordering Information
The device number is used to form part of a simplified purchasing code where the package type and temperature range are
defined as follows:
74F 219 S C X
Temperature Range Family Special Variations
74F
e
Commercial QBeMilitary grade device with
54F
e
Military environmental and burn-in
processing
Device Type
X
e
Devices shipped in 13×reel
Package Code
Temperature Range
P
e
Plastic DIP
C
e
Commercial (0§Ctoa70§C)
D
e
Ceramic DIP
L
e
Military (b55§Ctoa100§C)
F
e
Flatpak
L
e
Leadless Chip Carrier (LCC)
S
e
Small Outline SOIC JEDEC
SJ
e
Small Outline SOIC EIAJ
Physical Dimensions inches (millimeters)
20-Lead Ceramic Leadless Chip Carrier (L)
NS Package Number E20A
5
Physical Dimensions inches (millimeters) (Continued)
16-Lead Ceramic Dual-In-Line Package (D)
NS Package Number J16A
16-Lead (0.300×Wide) Molded Small Outline Package, JEDEC (S)
NS Package Number M16B
6
Physical Dimensions inches (millimeters) (Continued)
16-Lead (0.300×Wide) Molded Small Outline Package, EIAJ (SJ)
NS Package Number M16D
16-Lead (0.300×Wide) Molded Dual-In-Line Package (P)
NS Package Number N16E
7
54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs
Physical Dimensions inches (millimeters) (Continued)
16-Lead Ceramic Flatpak (F)
NS Package Number W16A
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into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life
failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
to the user.
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