NSC 54F219LMQB, 54F219LLQB, 54F219DLQB Datasheet

TL/F/9500

54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs

November 1994

54F/74F219
64-Bit Random Access Memory with TRI-STATE

É

Outputs

General Description

The ’F219 is a high-speed 64-bit RAM organized as a
16-word by 4-bit array. Address inputs are buffered to mini­mize loading and are fully decoded on-chip. The outputs are
TRI-STATE and are in the high-impedance state whenever
the Chip Select (CS

) input is HIGH. The outputs are active
only in the Read mode. This device is similar to the ’F189
but features non-inverting, rather than inverting, data out­puts.

Features

Y

TRI-STATE outputs for data bus applications

Y

Buffered inputs minimize loading

Y

Address decoding on-chip

Y

Diode clamped inputs minimize ringing

Y

Available in SOIC (300 mil only)

Commercial Military

Package

Package Description

Number

74F219PC N16E 16-Lead (0.300×Wide) Molded Dual-In-Line

54F219DL (Note 2) J16A 16-Lead Ceramic Dual-In-Line

74F219SC (Note 1) M16B 16-Lead (0.300×Wide) Molded Small Outline, JEDEC

74F219SJ (Note 1) M16D 16-Lead (0.300×Wide) Molded Small Outline, EIAJ

54F219FL (Note 2) W16A 16-Lead Cerpack

54F219LL (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier, Type C

Note 1: Devices also available in 13×reel. Use suffixeSCX and SJX.

Note 2: Military grade device with environmental and burn-in processing. Use suffix

e

DLQB, FLQB and LLQB.

Logic Symbol

TL/F/9500– 1

Connection Diagrams

Pin Assignment for

DIP, SOIC and Flatpak

TL/F/9500– 2

Pin Assignment

for LCC

TL/F/9500– 3

TRI-STATEÉis a registered trademark of National Semiconductor Corporation.

C

1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.

Unit Loading/Fan Out

54F/74F

Pin Names Description

U.L. Input I

IH/IIL

HIGH/LOW Output IOH/I

OL

A0–A

3

Address Inputs 1.0/1.0 20 mA/b0.6 mA

CS

Chip Select Input (Active LOW) 1.0/2.0 20 mA/b1.2 mA

WE

Write Enable Input (Active LOW) 1.0/1.0 20 mA/b0.6 mA

D0–D

3

Data Inputs 1.0/1.0 20 mA/b0.6 mA

O

0–O3

TRI-STATE Data Outputs 150/40 (33.3)

b

3 mA/24 mA (20 mA)

Function Table

Inputs

Operation Condition of Outputs

CS WE

L L Write High Impedance
L H Read True Stored Data
H X Inhibit High Impedance

HeHIGH Voltage Level
L

e

LOW Voltage Level

X

e

Immaterial

Block Diagram

TL/F/9500– 4

2

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Storage Temperature

b

65§Ctoa150§C

Ambient Temperature under Bias

b

55§Ctoa125§C

Junction Temperature under Bias

b

55§Ctoa175§C

Plastic

b

55§Ctoa150§C

V

CC

Pin Potential to

Ground Pin

b

0.5V toa7.0V

Input Voltage (Note 2)

b

0.5V toa7.0V

Input Current (Note 2)

b

30 mA toa5.0 mA

Voltage Applied to Output

in HIGH State (with V

CC

e

0V)

Standard Output

b

0.5V to V

CC

TRI-STATE Output

b

0.5V toa5.5V

Current Applied to Output

in LOW State (Max) twice the rated I

OL

(mA)

Note 1: Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under
these conditions is not implied.

Note 2: Either voltage limit or current limit is sufficient to protect inputs.

Recommended Operating
Conditions

Free Air Ambient Temperature

Military

b

55§Ctoa100§C

Commercial 0

§

Ctoa70§C

Supply Voltage

Military

a

4.5V toa5.5V

Commercial

a

4.5V toa5.5V

DC Electrical Characteristics

Symbol Parameter

54F/74F

Units V

CC

Conditions

Min Typ Max

V

IH

Input HIGH Voltage 2.0 V Recognized as a HIGH Signal

V

IL

Input LOW Voltage 0.8 V Recognized as a LOW Signal

V

CD

Input Clamp Diode Voltage

b

1.2 V Min I

IN

eb

18 mA

V

OH

Output HIGH 54F 10% V

CC

2.5 I

OH

eb

1mA

Voltage 54F 10% V

CC

2.4 I

OH

eb

3mA

74F 10% V

CC

2.5
V Min

I

OH

eb

1mA

74F 10% V

CC

2.4 I

OH

eb

3mA

74F 5% V

CC

2.7 I

OH

eb

1mA

74F 5% V

CC

2.7 I

OH

eb

3mA

V

OL

Output LOW 54F 10% V

CC

0.5
V Min

I

OL

e

20 mA

Voltage 74F 10% V

CC

0.5 I

OL

e

24 mA

I

IH

Input HIGH 54F 20.0

mA Max

V

IN

e

2.7V

Current 74F 5.0

I

BVI

Input HIGH Current 54F 100

mA Max

V

IN

e

7.0V

Breakdown Test 74F 7.0

I

CEX

Output HIGH 54F 250

mA Max

V

OUT

e

V

CC

Leakage Current 74F 50

V

ID

Input Leakage

74F 4.75 V 0.0

I

ID

e

1.9 mA

Test All Other Pins Grounded

I

OD

Output Leakage

74F 3.75 mA 0.0

V

IOD

e

150 mV

Circuit Current All Other Pins Grounded

I

IL

Input LOW

b

0.6
mA Max

V

IN

e

0.5V (An,WE,Dn)

Current

b

1.2 V

IN

e

0.5V (CS)

I

OZH

Output Leakage Current 50 mA Max V

OUT

e

2.7V

I

OZL

Output Leakage Current

b

50 mA Max V

OUT

e

0.5V

I

OS

Output Short-Circuit Current

b

60

b

150 mA Max V

OUT

e

0V

I

ZZ

Bus Drainage Test 500 mA 0.0V V

OUT

e

5.25V

I

CC

Power Supply Current 37 55 mA Max

3