NSC 5962-9758401QDA, 5962-9758401QCA, 5962-9758401Q2A, 54F20DM, 54F20DC Datasheet

TL/F/9462
54F/74F20 Dual 4-Input NAND Gate
November 1994
54F/74F20 Dual 4-Input NAND Gate
General Description
This device contains two independent gates, each of which performs the logic NAND function.
Package
Package Description
Number
74F20PC N14A 14-Lead (0.300×Wide) Molded Dual-In-Line
54F20DM (Note 2) J14A 14-Lead Ceramic Dual-In-Line
74F20SC (Note 1) M14A 14-Lead (0.150×Wide) Molded Small Outline, JEDEC
74F20SJ (Note 1) M14D 14-Lead (0.300×Wide) Molded Small Outline, EIAJ
54F20FM (Note 2) W14B 14-Lead Cerpack
54F20LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier, Type C
Note 1: Devices also available in 13×reel. Use suffixeSCX and SJX.
Note 2: Military grade device with environmental and burn-in processing. Use suffix
e
DMQB, FMQB and LMQB.
Logic Symbol
IEEE/IEC
TL/F/9462– 3
Connection Diagrams
Pin Assignment
for DIP, SOIC and Flatpak
TL/F/9462– 2
Pin Assignment
for LCC
TL/F/9462– 1
Unit Loading/Fan Out
54F/74F
Pin Names Description
U.L. Input I
IH/IIL
HIGH/LOW Output IOH/I
OL
An,Bn,Cn,D
n
Inputs 1.0/1.0 20 mA/b0.6 mA
O
n
Outputs 50/33.3
b
1 mA/20 mA
TRI-STATEÉis a registered trademark of National Semiconductor Corporation.
C
1995 National Semiconductor Corporation RRD-B30M75/Printed in U. S. A.
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
Storage Temperature
b
65§Ctoa150§C
Ambient Temperature under Bias
b
55§Ctoa125§C
Junction Temperature under Bias
b
55§Ctoa175§C
Plastic
b
55§Ctoa150§C
V
CC
Pin Potential to
Ground Pin
b
0.5V toa7.0V
Input Voltage (Note 2)
b
0.5V toa7.0V
Input Current (Note 2)
b
30 mA toa5.0 mA
Voltage Applied to Output
in HIGH State (with V
CC
e
0V)
Standard Output
b
0.5V to V
CC
TRI-STATEÉOutput
b
0.5V toa5.5V
Current Applied to Output
in LOW State (Max) twice the rated I
OL
(mA)
Note 1: Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
Recommended Operating Conditions
Free Air Ambient Temperature
Military
b
55§Ctoa125§C
Commercial 0
§
Ctoa70§C
Supply Voltage
Military
a
4.5V toa5.5V
Commercial
a
4.5V toa5.5V
DC Electrical Characteristics
Symbol Parameter
54F/74F
Units V
CC
Conditions
Min Typ Max
V
IH
Input HIGH Voltage 2.0 V Recognized as a HIGH Signal
V
IL
Input LOW Voltage 0.8 V Recognized as a LOW Signal
V
CD
Input Clamp Diode Voltage
b
1.2 V Min I
IN
eb
18 mA
V
OH
Output HIGH 54F 10% V
CC
2.5 I
OH
eb
1mA
Voltage 74F 10% V
CC
2.5 V Min I
OH
eb
1mA
74F 5% V
CC
2.7 I
OH
eb
1mA
V
OL
Output LOW 54F 10% V
CC
0.5 V Min
I
OL
e
20 mA
Voltage 74F 10% V
CC
0.5 I
OL
e
20 mA
I
IH
Input HIGH 54F 20.0
mA Max V
IN
e
2.7V
Current 74F 5.0
I
BVI
Input HIGH Current 54F 100
mA Max V
IN
e
7.0V
Breakdown Test 74F 7.0
I
CEX
Output HIGH 54F 250
mA Max V
OUT
e
V
CC
Leakage Current 74F 50
V
ID
Input Leakage
74F 4.75 V 0.0
I
ID
e
1.9 mA
Test All other pins grounded
I
OD
Output Leakage
74F 3.75 mA 0.0
V
IOD
e
150 mV
Circuit Current All other pins grounded
I
IL
Input LOW Current
b
0.6 mA Max V
IN
e
0.5V
I
OS
Output Short-Circuit Current
b
60
b
150 mA Max V
OUT
e
0V
I
CCH
Power Supply Current 0.9 1.4 mA Max V
O
e
HIGH
I
CCL
Power Supply Current 3.4 5.1 mA Max V
O
e
LOW
2
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