Datasheet CF5010BN4-1 Datasheet (NPC)

preliminary

=

=

.

SM5010 series

NIPPON PRECISION CIRCUITS INC.

Crystal Oscillator Module ICs

OVERVIEW

The SM5010 series are crystal oscillator module ICs, that incorporate oscillator and output buffer circuits.
High-frequency capacitors and feedback resistors are built-in, eliminating the need for external components to
make a stable fundamental-harmonic oscillator.

FEATURES

Inverter amplifier feedback resistor built-in

■

■

Capacitors C

■

Standby function
Power-save pull-up resistor built-in (5010CL × )

■

■

16 mA (V

, C

built-in

G

D

4.5 V) drive capability

DD

(5010AN × , AK × , BN × , BK × , CL × , DN × )

■

4 mA (V

4.5 V) drive capability

DD

(5010AH × , BH × )

Output three-state function

■

■

2.7 to 5.5 V supply voltage

■

Oscillator frequency output (f
determined by internal connection)

■

8-pin SOP (SM5010 ××× S)
Chip form (CF5010 ××× )

■

, f

/2, f

O

/4, f

O

O

O

SERIES CONFIGURATION

R

D

[

Ω

]

Built-in

capacitance

C

C

G

D

[pF]

[pF]

TBD

Input

Output

level

duty level

(5V)

TTL CMOS No

Standby

function

3V operating 5V operating

Output

1

Version

SM5010AN1S f
SM5010AN2S f
SM5010AN3S f
SM5010AN4S f
SM5010AK1S f
SM5010AH1S f
SM5010AH2S f
SM5010AH3S f
SM5010AH4S f
SM5010BN1S f
SM5010BN2S f
SM5010BN3S f
SM5010BN4S f
SM5010BK1S f
SM5010BH1S f
SM5010BH2S f
SM5010BH3S f
SM5010BH4S f
SM5010CL1S f
SM5010CL2S f
SM5010CL3S f
SM5010CL4S f
SM5010DN1S f

1. Chip form devices have designation CF5010
Note: Recommended operating frequency is not the guaranteed value but is measured using NPC’s standard crystal.

frequency

Output

Recommended

load

(max)

[pF]

O

/2 15 30 50 30 16 – TTL CMOS/TTL No

O

/4 15 30 50 30 16 – TTL CMOS/TTL No

O

/8 15 30 50 30 16 – TTL CMOS/TTL No

O

O
O

/2 15 16 15 30 4 – TTL CMOS No

O

/4 15 16 15 30 4 – TTL CMOS No

O

/8 15 16 15 30 4 – TTL CMOS No

O

O

/2 15 30 50 30 16 820 TTL CMOS/TTL No

O

/4 15 30 50 30 16 820 TTL CMOS/TTL No

O

/8 15 30 50 30 16 820 TTL CMOS/TTL No

O

O
O

/2 15 16 15 30 4 820 TTL CMOS No

O

/4 15 16 15 30 4 820 TTL CMOS No

O

/8 15 16 15 30 4 820 TTL CMOS No

O

O

/2 15 30 50 30 16 – CMOS CMOS Yes

O

/4 15 30 50 30 16 – CMOS CMOS Yes

O

/8 15 30 50 30 16 – CMOS CMOS Yes

O

O

operating
frequency

range [MHz]

15 30 50 30 16 –

– – 15 30 16 – TTL TTL No

15 16 15 30 4 – TTL CMOS No

15 30 50 30 16 820 TTL CMOS No

– – 15 30 16 820 TTL TTL N o

15 16 15 30 4 820 TTL CMOS No

15 30 50 30 16 – CMOS CMOS Yes

15 30 50 30 16 820 TTL CMOS No

×××

Output

load

(max)

[pF]

Recommended

operating

frequency

range [MHz]

Output
current

[mA]

/8

NIPPON PRECISION CIRCUITS—1

preliminary

ORDERING INFORMATION

De vice Pack ag e

SM5010

×××

S 8-pin SOP

CF5010

×××

–1 Chip form

PACKAGE DIMENSIONS

(Unit:mm)

8-pin SOP

•

SM5010 series

0.15

+

−

0.05

0.1

0.695typ

1.5 0.1

1.27

5.2 0.3

0.4 0.1

4.4 0.2

0.10

6.2 0.3

0.05 0.05

M

0.12

0.4 0.2

0 to 10

NIPPON PRECISION CIRCUITS—2

preliminary

SM5010 series

PAD LAYOUT

(Unit: µ m)

VDD

Y

(0,0)

Chip size: 0.92
Chip thickness: 300 ± 30 µm
Chip base: V

XT VSS

INH XT

X

×

DD

Q

HA5010

1.18 mm

level

(920,1180)

PINOUT

(Top view)

INH

XT

XT

VSS

VDD

1

2

3

4

8

7

NC

NC

6

Q

5

PIN DESCRIPTION and PAD DIMENSIONS

Number Name I/O Description

1INH
2 XT I Amplifier input.

3XTO Amplifier output. 57 5 174.4
4 VS S – Ground 765 174.4
5 Q O Output. Output frequency (f
6 N C – No connection ––
7 N C – No connection ––
8 V D D – Supply voltage 165.4 1014.6

Output state control input. High impedance when LOW. In the case of the

I

5010CL

×

, the oscillator stops and Pow er- saving pull-up resistor built in.

Cr ystal oscillator connection pins.
Cr ystal oscillator connected between XT and XT

, f

/2, f

/4, f

O

O

/8) determined by inter nal connection 757.6 1017.6

O

O

Pad dimensions [µm]

XY

195 174.4
385 174.4

BLOCK DIAGRAM

XT

CG CD

XT

INH

VSSVDD

Rf

RD

1/2 1/2 1/2

Q

NIPPON PRECISION CIRCUITS—3

preliminary

SPECIFICATIONS

Absolute Maximum Ratings

V

= 0 V

SS

Parameter Sym bol Condition Rating Unit

Supply voltage range V
Input voltage range V
Output voltage range V
Ope rating temperature range T

Storage temperature range T

Output current I

Po w er dissipation P
Soldering temperature T
Soldering time t

DD

IN

OUT

opr

stg

OUT

D

sld

sld

SM5010 series

−

0.5 to 7.0 V

−

0.5 to V

−

0.5 to V

Chip form
8-pin SOP
5010

×

H

×

5010

×

N

×

,

×

K

×

, CL

×

8-pin SOP 500 m W
8-pin SOP 255
8-pin SOP 10 s

+ 0.5 V

DD

+ 0.5 V

DD

−

40 to 85

−

65 to 150

−

55 to 125

10
25

°

°

mA

°

C

C

C

Recommended Operating Conditions

3V operation

V

= 0 V

SS

Parameter Symbol Series Condition

×

N

×

2

≤

f

≤

30 MHz, C

Supply voltage V

Input voltage V

Ope rating temperature T

DD

IN

OPR

5V operation

V

= 0 V

SS

Parameter Symbol Series Condition

Supply voltage V

Input voltage V

DD

IN

Ope rating temperature T

OPR

×

H

CL

×

N

×

H

CL

×N×

×H×

CL

×N×

×K×

×H×

CL

×N×

×K×

×H×

CL

×N×

×K×

×H×

CL

×

2

≤

f

≤

16 MHz, C

×

2

≤

f

≤

30 MHz, C

×

2

≤

f

≤

30 MHz, C

×

2

≤

f ≤ 16 MHz, CL ≤ 15 pF V

×

2 ≤ f ≤ 30 MHz, CL ≤ 15 pF V
2 ≤ f ≤ 30 MHz, CL ≤ 15 pF
2 ≤ f ≤ 16 MHz, CL ≤ 15 pF

×

2 ≤ f ≤ 30 MHz, CL ≤ 15 pF

2 ≤ f ≤ 30 MHz, CL ≤ 50 pF 4.5 – 5.5
2 ≤ f ≤ 30 MHz, CL ≤ 15 pF 4.5 – 5.5
2 ≤ f ≤ 30 MHz, CL ≤ 15 pF 4.5 – 5.5

×

2 ≤ f ≤ 30 MHz, CL ≤ 50 pF 4.5 – 5.5
2 ≤ f ≤ 30 MHz, CL ≤ 50 pF V
2 ≤ f ≤ 30 MHz, CL ≤ 15 pF V
2 ≤ f ≤ 30 MHz, CL ≤ 15 pF V

×

2 ≤ f ≤ 30 MHz, CL ≤ 50 pF V
2 ≤ f ≤ 30 MHz, CL ≤ 50 pF
2 ≤ f ≤ 30 MHz, CL ≤ 15 pF
2 ≤ f ≤ 30 MHz, CL ≤ 15 pF

×

2 ≤ f ≤ 30 MHz, CL ≤ 50 pF

Rating

min typ max

≤

15 pF 2.7 – 3.6

L

≤

15 pF 2.7 – 3.6

L

≤

15 pF 2.7 – 3.6

L

≤

15 pF V

L

SS
SS
SS

−

10 –

−

10 –

−

20 –

min typ max

SS
SS
SS
SS

−

40 –

−

40 –

−

40 –

−

40 –

–V
–V
–V

Rating

–V
–V
–V
–V

Unit

V

DD
DD
DD

+

70

+

70

+

80

DD
DD
DD
DD

+

85

+

85

+

85

+

85

V

°

C

Unit

V

V

°

C

NIPPON PRECISION CIRCUITS—4

preliminary

SM5010 series

Electrical Characteristics

5010×N× series

3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −10 to 70 °C unless otherwise noted.

Parameter Symbol Condition

HIGH-level output voltage V
L O W-level output voltage V

Output leakage current I

HIGH-level input voltage V
L O W -level input voltage V

Current consumption I

INH pull-up resistance R
Feedback resistance RfMeasurement cct 5 – 200 – k
Oscillator amplifier output

resistance

Built-in capacitance

Q: Measurement cct 1, VDD = 2.7 V, IOH = 8 mA 2.1 2.4 – V

OH

Q: Measurement cct 2, VDD = 2.7 V, IOL = 8 mA – 0.3 0.4 V

OL

Q: Measurement cct 2, IN H = LOW, VDD = 3.6 V, VOH = V

Z

Q: Measurement cct 2, IN H = LOW, VDD = 3.6 V, VOL = V
INH 2.0 – – V

IH

INH – – 0.5 V

IL

5010

Measurement cct 3, load cct 1,

DD

INH = open, CL = 15 pF, f = 30 MHz

Measurement cct 4 – 100 – k

UP1

Design value 5010B

R

D

C

G

Design value, determined by the internal
w afer pattern

C

D

5010×N2
5010×N3
5010×N4

5010A

×

N1

××

××

DD

SS

, 5010B

××

Rating

min typ max

––10
––10

TBD

– 820 –

TBD

5010×N×, ×K× series

5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted.

Unit

µA

mA

Ω

Ω

Ω

pF
pF

Parameter Symbol Condition

HIGH-level output voltage V
L O W-level output voltage V

Output leakage current I

HIGH-level input voltage V
L O W -level input voltage V

Current consumption I

INH pull-up resistance R
Feedback resistance RfMeasurement cct 5 – 200 – k
Oscillator amplifier output

resistance

Built-in capacitance

Q: Measurement cct 1, VDD = 4.5 V, IOH = 16 mA 3.9 4.2 – V

OH

Q: Measurement cct 2, VDD = 4.5 V, IOL = 16 mA – 0.3 0.4 V

OL

Q: Measurement cct 2, IN H = LOW, VDD = 5.5 V, VOH = V

Z

Q: Measurement cct 2, IN H
INH 2.0 – – V

IH

INH – – 0.8 V

IL

Measurement cct 3, load cct 2,
INH = open, CL = 50 pF, f = 30 MHz

DD

Measurement cct 3, load cct 1,
INH

= open, CL = 15 pF, f = 30 MHz

Measurement cct 4 – 100 – k

UP1

Design value 5010B

R

D

C

G

Design value, determined by the internal
w afer pattern

C

D

= LOW, VDD = 5.5 V, VOL = V

5010
5010
5010×N3
5010

5010

5010A

×

N1

×

N2

×

N4

×K×

××

××

DD

SS

, 5010B

××

Rating

min typ max

––10
––10

TBD

– 820 –

TBD

Unit

µA

mA

Ω

Ω

Ω

pF
pF

NIPPON PRECISION CIRCUITS—5

preliminary

SM5010 series

5010×H× series

3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −10 to 70 °C unless otherwise noted.

Parameter Symbol Condition

HIGH-level output voltage V
L O W-level output voltage V

Output leakage current I

HIGH-level input voltage V
L O W -level input voltage V

Current consumption I

INH pull-up resistance R
Feedback resistance RfMeasurement cct 5 – 200 – k
Oscillator amplifier output

resistance

Built-in capacitance

Q: Measurement cct 1, VDD = 2.7 V, IOH = 2 mA 2.1 2.4 – V

OH

Q: Measurement cct 2, VDD = 2.7 V, IOL = 2 mA – 0.3 0.5 V

OL

Q: Measurement cct 2, IN H = LOW, VDD = 3.6 V, VOH = V

Z

Q: Measurement cct 2, IN H = LOW, VDD = 3.6 V, VOL = V
INH 2.0 – – V

IH

INH – – 0.5 V

IL

5010

Measurement cct 3, load cct 2,

DD

INH = open, CL = 15 pF, f = 16 MHz

Measurement cct 4 – 100 – k

UP1

R

Design value 5010B

D

C

G

Design value, determined by the internal
w afer pattern

C

D

5010×H2
5010×H3
5010×H4

5010A

×

H1

××

××

DD

SS

, 5010B

××

Rating

min typ max

––10
––10

TBD

– 820 –

TBD

Unit

µA

mA

Ω

Ω

Ω

pF
pF

5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted.

Parameter Symbol Condition

HIGH-level output voltage V
L O W-level output voltage V

Output leakage current I

HIGH-level input voltage V
L O W -level input voltage V

Current consumption I

INH

pull-up resistance R
Feedback resistance RfMeasurement cct 5 – 200 – k
Oscillator amplifier output

resistance

Built-in capacitance

Q: Measurement cct 1, VDD = 4.5 V, IOH = 4 mA 3.9 4.2 – V

OH

Q: Measurement cct 2, VDD = 4.5 V, IOL = 4 mA – 0.3 0.5 V

OL

Q: Measurement cct 2, IN H = LOW, VDD = 5.5 V, VOH = V

Z

Q: Measurement cct 2, IN H
INH 2.0 – – V

IH

INH – – 0.8 V

IL

Measurement cct 3, load cct 2,

DD

INH = open, CL = 15 pF, f = 30 MHz

Measurement cct 4 – 100 – k

UP1

Design value 5010B

R

D

C

G

Design value, determined by the internal
w afer pattern

C

D

= LOW, VDD = 5.5 V, VOL = V

5010
5010
5010×H3
5010

5010A

×

H1

×

H2

×

H4

××

××

DD

SS

, 5010B

××

Rating

min typ max

––10
––10

TBD

– 820 –

TBD

Unit

µA

mA

Ω

Ω

Ω

pF
pF

NIPPON PRECISION CIRCUITS—6

preliminary

SM5010 series

5010CL× series

3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted.

Parameter Symbol Condition

HIGH-level output voltage V
L O W-level output voltage V

Output leakage current I

HIGH-level input voltage V
L O W -level input voltage V

Current consumption I

INH pull-up resistance

Feedback resistance RfMeasurement cct 5 – 200 – k

Built-in capacitance

Q: Measurement cct 1, VDD = 2.7 V, IOH = 8 mA 2.2 2.4 – V

OH

Q: Measurement cct 2, VDD = 2.7 V, IOL = 8 mA – 0.3 0.4 V

OL

Q: Measurement cct 2, IN H = LOW, VDD = 3.6 V, VOH = V

Z

Q: Measurement cct 2, IN H = LOW, VDD = 3.6 V, VOL = V
INH 0.7V

IH

INH 0.3V

IL

5010CL1

Measurement cct 3, load cct 2,

DD

INH = open, CL = 15 pF, f = 30 MHz

R

UP1

Measurement cct 4

R

UP2

C

G

Design value, determined by the internal wafer pattern

C

D

5010CL2
5010CL3
5010CL4

DD

SS

min typ max

Rating

––10
––10

DD

DD

TBD

– 100 – k

TBD M

TBD

5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted.

Unit

µA

V
V

mA

Ω

Ω

Ω

pF
pF

Parameter Symbol Condition

HIGH-level output voltage V
L O W-level output voltage V

Output leakage current I

HIGH-level input voltage V
L O W -level input voltage V

Current consumption I

INH pull-up resistance

Feedback resistance RfMeasurement cct 5 – 200 – k

Built-in capacitance

Q: Measurement cct 1, VDD = 4.5 V, IOH = 16 mA 4.0 4.2 – V

OH

Q: Measurement cct 2, VDD = 4.5 V, IOL = 16 mA – 0.3 0.4 V

OL

Q: Measurement cct 2, IN H = LOW, VDD = 5.5 V, VOH = V

Z

Q: Measurement cct 2, IN H = LOW, VDD = 5.5 V, VOL = V
INH 0.7V

IH

INH 0.3V

IL

5010CL1

Measurement cct 3, load cct 2,

DD

INH

= open, CL = 50 pF, f = 30 MHz

R

UP1

Measurement cct 4

R

UP2

C

G

Design value, determined by the internal wafer pattern

C

D

5010CL2
5010CL3
5010CL4

DD

SS

min typ max

Rating

––10
––10

DD

DD

TBD

– 100 – k

TBD M

TBD

Unit

µA

V
V

mA

Ω

Ω

Ω

pF
pF

NIPPON PRECISION CIRCUITS—7

preliminary

SM5010 series

Switching Characteristics

5010×N× series

3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −10 to 70 °C unless otherwise noted.

Parameter Symbol Condition

Output rise time t
Output fall time t

Output duty cycle

Output disable delay time t
Output enable delay time t

1. Determined by the lot monitor.

1

Measurement cct 6, load cct 2, CL = 15 pF, 0.1VDD to 0.9V

r1

Measurement cct 6, load cct 2, CL = 15 pF, 0.9VDD to 0.1V

f1

Measurement cct 6, load cct 2, V

Duty

CL = 15 p F, f = 30MHz

PLZ

Measurement cct 7, load cct 2, VDD = 3.0 V, Ta = 25 °C,
CL = 15 pF

PZL

= 3.0 V, Ta = 25 °C,

DD

DD

DD

Rating

min typ max

– 3.0 6.0 n s
– 3.0 6.0 n s

40–60%

– – 100 ns
– – 100 ns

5010×N×, ×K× series

5 V operation (5010×N×): VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted.

Parameter S ymb ol Condition

t

r2

Output rise time

Output fall time

Output duty cycle

Output disable delay time t
Output enable delay time t

1. Determined by the lot monitor.

1

Measurement cct 6, load cct 2,

0.1VDD to 0.9V

t

r3

t

f2

Measurement cct 6, load cct 2,

0.9VDD to 0.1V

t

f3

Measurement cct 6, load cct 2, VDD = 5.0 V, Ta = 25 °C,

Duty

CL = 50 p F, f = 30MHz

PLZ

Measurement cct 7, load cct 2, VDD = 5.0 V, Ta = 25 °C,
CL = 15 pF

PZL

DD

DD

CL = 15 pF – 2.0 4.0
CL = 50 pF – 4.0 8.0
CL = 15 pF – 2.0 4.0
CL = 50 pF – 4.0 8.0

Rating

min typ max

45–55%

– – 100 ns
– – 100 ns

Unit

Unit

ns

ns

5 V operation (5010AN2, AN3, AN4, BN2, BN3, BN4, ×K×): VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C
unless otherwise noted.

Parameter Symbol Condition

Output rise time t
Output fall time t

Output duty cycle

Output disable delay time t
Output enable delay time t

1. Determined by the lot monitor.

1

Measurement cct 6, load cct 1, CL = 15 pF, 0.4V to 2.4V – 1.5 3.0 n s

r4

Measurement cct 6, load cct 1, CL = 15 pF, 2.4V to 0.4V – 1.5 3.0 n s

f4

Measurement cct 6, load cct 1, VDD = 5.0 V, Ta = 25 °C,

Duty

PLZ

PZL

= 15 p F, f = 30MHz

C

L

Measurement cct 7, load cct 1, VDD = 5.0 V, Ta = 25 °C,
CL = 15 pF

Rating

min typ max

45–55%

– – 100 ns
– – 100 ns

Unit

NIPPON PRECISION CIRCUITS—8

preliminary

SM5010 series

5010×H× series

3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −10 to 70 °C unless otherwise noted.

Parameter Symbol Condition

Output rise time t
Output fall time t

Output duty cycle

Output disable delay time t
Output enable delay time t

1. Determined by the lot monitor.

1

Measurement cct 6, load cct 2, CL = 15 pF, 0.1VDD to 0.9V

r1

Measurement cct 6, load cct 2, CL = 15 pF, 0.9VDD to 0.1V

f1

Measurement cct 6, load cct 2, V

Duty

CL = 15 p F, f = 16MHz

PLZ

Measurement cct 7, load cct 2, VDD = 3.0 V, Ta = 25 °C,
CL = 15 pF

PZL

= 3.0 V, Ta = 25 °C,

DD

min typ max

–1530ns

DD

–1530ns

DD

40–60%

– – 100 ns
– – 100 ns

5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted.

Parameter S ymb ol Condition

t

r2

Output rise time

Output fall time

Output duty cycle

Output disable delay time t
Output enable delay time t

1. Determined by the lot monitor.

1

Measurement cct 6, load cct 2,

0.1VDD to 0.9V

t

r3

t

f2

Measurement cct 6, load cct 2,

0.9VDD to 0.1V

t

f3

Measurement cct 6, load cct 2, VDD = 5.0 V, Ta = 25 °C,

Duty

CL = 15 p F, f = 30MHz

PLZ

Measurement cct 7, load cct 2, VDD = 5.0 V, Ta = 25 °C,
CL = 15 pF

PZL

DD

DD

CL = 15 pF – 5 10
CL = 50 pF – 13 26
CL = 15 pF – 5 10
CL = 50 pF – 13 26

min typ max

45–55%

– – 100 ns
– – 100 ns

Rating

Unit

Rating

Unit

ns

ns

NIPPON PRECISION CIRCUITS—9

preliminary

SM5010 series

5010CL× series

3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted.

Parameter Symbol Condition

t

r2

Output rise time

Output fall time

Output duty cycle

Output disable delay time
Output enable delay time

1. Determined by the lot monitor.

2. Oscillator stop function is built-in. When INH goes LOW , normal output stops. When INH goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.

1

2

2

Measurement cct 6, load cct 2,

0.1VDD to 0.9V

t

r4

t

f2

Measurement cct 6, load cct 2,

0.9VDD to 0.1V

t

f4

Measurement cct 6, load cct 2, V

Duty

CL = 15 p F, f = 30MHz

t

PLZ

Measurement cct 7, load cct 2, VDD = 3.0 V, Ta = 25 °C,
CL = 15 pF

t

PZL

DD

DD

DD

CL = 15 pF – 2.0 4.0
CL = 30 pF – 3.0 6.0
CL = 15 pF – 2.0 4.0
CL = 30 pF – 3.0 6.0

= 3.0 V, Ta = 25 °C,

Rating

min typ max

45–55%

– – 100 ns
– – 100 ns

Unit

ns

ns

5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted.

Parameter S ymb ol Condition

t

r2

Output rise time

Output fall time

Output duty cycle

Output disable delay time
Output enable delay time

1. Determined by the lot monitor.

2. Oscillator stop function is built-in. When INH goes LOW , normal output stops. When INH goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.

1

2

2

Measurement cct 6, load cct 2,

0.1VDD to 0.9V

t

r3

t

f2

Measurement cct 6, load cct 2,

0.9VDD to 0.1V

t

f3

Measurement cct 6, load cct 2, VDD = 5.0 V, Ta = 25 °C,

Duty

CL = 50 p F, f = 30MHz

t

PLZ

Measurement cct 7, load cct 2, VDD = 5.0 V, Ta = 25 °C,
CL = 15 pF

t

PZL

DD

DD

CL = 15 pF – 1.5 3.0
CL = 50 pF – 4.0 8.0
CL = 15 pF – 1.5 3.0
CL = 50 pF – 4.0 8.0

Rating

Unit

min typ max

ns

ns

40–60%

– – 100 ns
– – 100 ns

Current consumption and Output waveform with NPC’s standard crystal

L

Cb

Ca R

f (MHz) R (Ω) L (mH) Ca (fF) Cb (pF)

30 17.2 4.36 6.46 2.26

NIPPON PRECISION CIRCUITS—10

preliminary

SM5010 series

FUNCTIONAL DESCRIPTION

Standby Function

AH, AK, AN, BH, BK, BN, DN series

When INH goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop.

CL series

When INH goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance.

Version INH Q Oscillator

AH, AK, AN, BH, BK,

BN, DN series

CL series

Power-save Pull-up Resistance (CL series only)

The INH pull-up resistance changes in response to the input level (HIGH or LOW). When INH goes LOW
(standby state), the pull-up resistance becomes large to reduce the current consumption during standby.

HIGH (or open) A ny f

LO W High impedance Normal operation

HIGH (or open) A ny fO , fO/2, fO/4 or fO/8 output frequency Nor mal operation

LO W High impedance Stopped

, fO/2, fO/4 or fO/8 output frequency Nor mal operation

O

NIPPON PRECISION CIRCUITS—11

preliminary

MEASUREMENT CIRCUITS

SM5010 series

Measurement cct 1

Signal

Generator

Q output

2.0V

P−P

3.5V

P−P

C1 : 0.001µF
R1 : 50
R2 : 263Ω (5010×N×, ×K×/ 3V operation)

245Ω (5010×N×, ×K×/ 5V operation)
1050Ω (5010×H×/ 3V operation)
975Ω (5010×H×/ 5V operation)
275Ω (5010CL×/ 3V operation)
250Ω (5010CL×/ 5V operation)

C1

R1

, 10MHz sine wave input signal (3V operation)
, 10MHz sine wave input signal (5V operation)

Ω

XT Q

Measurement cct 2

VDD

Q

INH

VSS

VDD

VSS

V

IZ, I

I

Z

Measurement cct 4

3.0V or 5.0V

VDD

VDD

VOH

0V

RUP1 =

R2

VSS

VIH
VIL

INH

V

RUP2 =

IPR

A

IPR

V

DD VIH

I

PR

(VIL = 0V)

(VIH = 0.7V DD)

Measurement cct 5

VDD

XT

XT

OL

A

V

OH

V

OL

A

IRf

VSS

Rf =

DD

V

IRf

Measurement cct 6

Measurement cct 3

Signal

Generator

2.0V

, 30MHz sine wave input signal (3V operation)

P−P

3.5V

, 30MHz sine wave input signal (5V operation)

P−P

C1 : 0.001µF

Ω

R1 : 50

C1

R1

IDD

A

VDD

XT Q

VSS

XT

XT

Measurement cct 7

Signal
Generator

R1

R1 : 50Ω

IDD

A

IST

VDD

INH

VSS

XT Q

QX'tal

VDD

VSS

INH

NIPPON PRECISION CIRCUITS—12

preliminary

SM5010 series

Load cct 1 Load cct 2

R

Q output

capacitance)

, tr , t

f

CL

CL = 15pF : DUTY , I
R = 400

Ω

(Including probe

DD

Switching Time Measurement Waveform

Output duty level (CMOS)

Q output

0.9VDD

0.1VDD

TW

tr tf

Output duty level (TTL)

Q output

CL = 15pF : DUTY , IDD , t
CL = 30pF : t
CL = 50pF : t

r4
r3

0.9VDD

0.1VDD

, t

f4

, t

f3

CL

, tf1 , t

, tf2 , t

r1

DUTY measurement
voltage (0.5V

, t

r2

r4

f4

(Including probe

capacitance)

DD)

Q output

Output duty cycle (CMOS)

Q output

Output duty cycle (TTL)

Q output

2.4V

0.4V
TW

tr tf

TW

T

TW

T

2.4V

0.4V

DUTY measurement
voltage (1.4V

DUTY= T

DUTY= T

)

DUTY measurement
voltage

(0.5VDD)

W/ T 100 (%)

DUTY measurement
voltage

(1.4V)

W/ T 100 (%)

NIPPON PRECISION CIRCUITS—13

preliminary

Output Enable/Disable Delay

SM5010 series

INH

VIL

tPLZ

Q output

INH input waveform tr = tf 10ns

Note (CL series only) : when the device is in standby, the oscillator stops. When standby is released, the oscil-

lator starts and stable oscillator output occurs after a short delay.

VIH

tPZL

NIPPON PRECISION CIRCUITS INC. reserves the right to make changes to the products described in this data sheet in order to
improve the design or performance and to supply the best possible products. Nippon Precision Circuits Inc. assumes no responsibility for
the use of any circuits shown in this data sheet, conveys no license under any patent or other rights, and makes no claim that the circuits
are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and Nippon Precision
Circuits Inc. makes no claim or warranty that such applications will be suitable for the use specified without further testing or modification.
The products described in this data sheet are not intended to use for the apparatus which influence human lives due to the failure or
malfunction of the products. Customers are requested to comply with applicable laws and regulations in effect now and hereinafter,
including compliance with export controls on the distribution or dissemination of the products. Customers shall not export, directly or
indirectly, any products without first obtaining required licenses and approvals from appropriate government agencies.

NIPPON PRECISION CIRCUITS INC.
4-3, Fukuzumi 2-chome

Koto-ku, Tokyo 135-8430, Japan
Telephone: [phone]

NIPPON PRECISION CIRCUITS INC.

Facsimile: [phone]
http://www.npc.co.jp/
Email: sales

@ npc.co.jp

NIPPON PRECISION CIRCUITS—14

NP0015AE 2000.10