Nokia Thf13, 640 System Module 02

Download

PAMS Technical Documentation

THF-13 Series Transceivers

System Module NH2

Issue 1 08/99  Nokia Mobile Phones Ltd.

THF-13

System Module NH2

PAMS Technical Documentation

AMENDMENT RECORD SHEET

Amendment Number

Date Inserted By Comments

08/99 OJuntune Issue 1

Page 2

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

CONTENTS

Transceiver THF–13 System Module NH2 7. . . . . . . . . . . . . . . . . .

Introduction 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

System Module 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Baseband Sub-module 8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Technical summary 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Modes of Operation 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Technical Specifications 11. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Maximum Ratings 11. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DC Characteristics 11. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Battery connector 12. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

UIF–connector 12. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CTRLU Circuit 13. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Block Description 13. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CTRLU – CONNECTORU 13. . . . . . . . . . . . . . . . . . . . . . . .

CTRLU – PWRU 13. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CTRLU – AUDIO 14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CTRLU – UIF 14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CTRLU – RX 14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CTRLU – SYNT 14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CTRLU – TX 15. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Main Components 15. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Controller Ports 15. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

PWRU 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Distribution 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Battery charging 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Startup charging 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Battery overvoltage protection 20. . . . . . . . . . . . . . . . . . . . .

Battery removal during charging 21. . . . . . . . . . . . . . . . . . .

Different PWM frequencies ( 1Hz and 32 Hz) 22. . . . . . . .

Supply voltage regulators and controlling 24. . . . . . . . . . .

Operation modes 27. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power–Off Mode 27. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Entering Power–Off Mode 28. . . . . . . . . . . . . . . . . . . . . . . . .

Charging in Power–Off 28. . . . . . . . . . . . . . . . . . . . . . . . . . .

Reset Mode 28. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power–On Mode 29. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

AUDIO BLOCK 30. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Main features 30. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

FFSK modem features 30. . . . . . . . . . . . . . . . . . . . . . . . . . .

Audio features 30. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Other features 30. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

THF-13

System Module NH2

Page No

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 3

THF-13

System Module NH2

Receive (RX) Audio Signal Path 33. . . . . . . . . . . . . . . . . . . . . . . .

Receiving Data Path 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Receiving Audio Path 34. . . . . . . . . . . . . . . . . . . . . . . . . . . .

RX Trimmer 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Mux and de–emphasis 35. . . . . . . . . . . . . . . . . . . . . . . . . . .

Expander 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RX filter 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

De–scrambler 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RX automatic gain control 35. . . . . . . . . . . . . . . . . . . . . . . . .

Ear sensitive filter 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Volume control 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Earphone and accessory buffers 36. . . . . . . . . . . . . . . . . . .

Transmitting paths 36. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Transmitting data path 36. . . . . . . . . . . . . . . . . . . . . . . . . . . .

Transmitting audio path 36. . . . . . . . . . . . . . . . . . . . . . . . . . .

Mic amplifier and mux 37. . . . . . . . . . . . . . . . . . . . . . . . . . . .

Mic trimmer and bandpass filter 37. . . . . . . . . . . . . . . . . . . .

Scrambler 37. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Compressor 37. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pre–emphasis 37. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Automatic Gain Control 37. . . . . . . . . . . . . . . . . . . . . . . . . . .

Tx hard limiter 37. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Tx lowpass filter 38. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Tx audio level control 38. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Tx trimmer 38. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Summing unit and trimmer 38. . . . . . . . . . . . . . . . . . . . . . . .

FII path 38. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Fii filtering and gain control 38. . . . . . . . . . . . . . . . . . . . . . . .

Hands free system 38. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Hands free controller 38. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Hands free attenuators 39. . . . . . . . . . . . . . . . . . . . . . . . . . .

Buzzer driver 39. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Clock divider 39. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Call continue sensor 39. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RF Module 40. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Introduction 40. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Technical Specifications 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Maximum ratings 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RX 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

SYNT 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TX 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Current Consumption 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Connections 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Connections to Baseband sub–module 45. . . . . . . . . . . . . . . .

Antenna 48. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Receiver 48. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

PAMS Technical Documentation

Page 4

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

RX Synthesizer 48. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RX loop filter 49. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TX Synthesizer 49. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TX Loop Filter 49. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Transmitter 49. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RF Characteristics 50. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Ambient temperature 50. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Duplexer 50. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RX submodule 50. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Preamplifier 52. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RX–filter 52. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1st mixer 52. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1st IF–filter 53. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

IF–amplifier 53. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2nd IF–filter 54. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

IF–circuit 54. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TX submodule 54. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power amplifier 55. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power control 56. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Coupler lines 56. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Synthesizer submodule 56. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

PLL 56. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RX VCO 56. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TX VCO 57. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Isolation amplifier (TX buffer) 58. . . . . . . . . . . . . . . . . . . . . .

VCTCXO 58. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Parts list of NH2 Basic (EDMS Issue 2.0) Code: 0201469 59. . . .

THF-13

System Module NH2

Schematic Diagrams

Block Diagram of System/RF Blocks (Version 15 Edit 164)

for layout version 15 3A–1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Circuit Diagram of Connectors (Version 15 Edit 249)

for layout version 15 3A–2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Circuit Diagram of CTRLU Block (Version 15 Edit 236 )

for layout version 15 3A–3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Circuit Diagram of PWRU (Version 15 Edit 220 )

for layout version 15 3A–4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Circuit Diagram of Audio (Version 15 Edit 326)

for layout version 15 3A–5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Circuit Diagram of Receiver (Version 15 Edit 172)

for layout version 15 3A–6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Circuit Diagram of Synthesiser Block (Version 15 Edit 101)

for layout version 15 3A–7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Page No

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 5

THF-13

System Module NH2

Circuit Diagram of Transmitter (Version 15 Edit 175)

for layout version 15 3A–8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Layout Diagram of NH2 (Version 15) 3A–9. . . . . . . . . . . . . . . . . . . . . .

Circuit Diagram of UIF Module (Version 03 Edit 63)

for layout version 03 4A–1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Layout Diagram of NU1 (Version 03) 4A–2. . . . . . . . . . . . . . . . . . . . . .

PAMS Technical Documentation

Page 6

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

Transceiver THF–13 System Module NH2

Introduction

This document specifices the System module NH1 of the THF–13

NMT–450 cellular phone.

The NH2 System Module comprises the baseband and the RF functions

of the phone.

System Module

List of submodules below:

Name of submodule Notes

THF-13

System Module NH2

CTRLU CONNU

PWRU AUDIO RX TX SYNT

Control Unit for the phone Connector Unit

Power supply Audio Receiver Transmitter Synthesizer

These blocks are only functional blocks and therefore have no type nor

material codes.

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 7

THF-13

System Module NH2

Baseband Sub-module

The Baseband submodule controls the internal operation of the phone. It

controls the user interface, i.e. LCD driver, keyboard and audio interface

functions. The module performs all signalling towards the system and car-

ries out audio–frequency signal processing. In addition, it controls the op-

eration of the transceiver and stores tuning data for the phone.

The baseband architecture is basically similar to the previous generation.

However, the system specified logical voltage level used is 2.82V and

new features include a improved charging circuit CHAPS, a new power

supply circuit PSA and signalling ASIC MASI.

The nominal battery voltage in THF–13 is 3.6V. The actual battery volt-

age varies between 3.2 to 4.2V/5.3V depending on the cell type used (Li-

Ion or NiMH) and whether the phone is connected to a charger (limit on

5.3V with NiMH battery in idle).

PAMS Technical Documentation

Battery charging is controlled by a PWM signal from the MCU. The PWM

duty cycle is determined by a charging software. The PWM signal is fed

to the CHAPS charging switch and through the charging pins to an exter-

nal charger. There can be two types of chargers connected to the phone.

Standard chargers (two wires) provide coarse supply power, which is

switched by the CHAPS for suitable charging voltage and current.

Advanced chargers (three wires) are equipped with a control input,

through which the phone gives PWM charging control signal to the char-

ger.

Page 8

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

THF-13

System Module NH2

Mod/IF

Audio

RF control

VRX, VTX

BUZZER

MASI

Audio/

Signalling

ASIC

XT AL

14..7456M

ADDRESS CONTROL

DATA

SIS

VL VA

FLASH SRAM

512Kx16 64kx8

MCU

H8 2322

8k RAM

ROMless

8ADC ports

I/O ports

UI CONNECTOR

Serial ports

LCD

Keyboard

XMIC,XEAR,MIC

MBUS,FBUS

BOTTOM CONNECTOR

CHARGER

PSA

Power

Supply

ASIC

PWM outputs

CHAPS

0R22

Charger

ASIC

BATTERY CONNECTOR

Figure 1.

I2C

EEPROM

RTC

Back–up

Battery

XTAL

32.768k

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 9

THF-13

System Module NH2

Technical summary

The baseband module consists of Hitachi H8S processor 2322, four ASIC

circuits, PSA, CHAPS, MASI and SIS, and some standard circuits,

FLASH, SRAM, EEPROM and a RTC.

The MCU includes 8 kbytes RAM. It controls all transceiver functions.

FLASH size is 1Mbytes and SRAM 64kBytes

The EEPROM type is 16 kbytes with 32 bytes and it’s a serial I

type, RTC is connected to the same bus and SDAT line is also used to

control LCD.

The baseband is running from a 2.8 V power rail, which is supplied by a

power controlling asic. In the PSA asic there are two separate power sup-

plies for BaseBand ( VA,VL ) and two externally controllable power sup-

plies for RF (VRX, VTX).

PAMS Technical Documentation

C–bus

The CHAPS is a charging control ASIC. It is essentially

power switch for controlling charging current, in a mobile phone. CHAPS

is designed for 3 cell Nickel or 1 cell Lithium battery packs.

The MASI circuit integrates the Audio and Modem operations. It includes

audio power amplifier for EAR and XEAR lines. MASI includes also driver

for buzzer.

All functional blocks of the baseband are mounted on a single multi layer

printed circuit board. All components of the baseband are surface mount-

able. This board contains also the RF–parts. The B–cover side ( battery

side ) EMC shielding is implemented by using a metallized inside of

B–cover as a shield on the RF–blocks. On the other side the engine is

shielded with a aluminium frame, which makes a contact to a ground ring

of the engine board.

The connections from BaseBand to UI board are fed through a 28–way

2–row board to board spring connector.

Modes of Operation

Power off, Standby, Listening and Conversation modes.

– In Power off mode only the circuits needed for power up are supplied.

an integrated

Page 10

– In Standby mode the MCU and needed blocks of the MASI are active,

in SLEEP mode MASI cuts off system clock.

– In Listening mode the receiver and some blocks of the MASI are ac-

tive.

– In Conversation mode all ICs are active.

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

Technical Specifications

Maximum Ratings

Parameter Rating

Battery voltage, idle mode 3.2... 5.3 V (5.0V in call mode)

Charger input voltage –5.0 ... 16V

Operating temperature range –25C to +55C

Storage temperature range –40C to +85 C

Charging of the batteries is possible only in the temperature range +5 ...

+45 °C.

DC Characteristics

THF-13

System Module NH2

The supply voltages and power consumption are listed below:

Line Symbol Minimum Typical /

Nominal

Supply battery voltage 3.2 3.6 4.5 (5.3 in

Battery cut off voltage (HW) 2.7 2.8 2.9 V (3.2V min SW

Regulated logic supply voltage (VL) 2.72 2.82 2.9 V Regulated logic supply current 0 40 mA Regulated audio supply voltage (VA) 2.7 2.8 2.85 V Regulated audio supply current 0 100 mA Regulated RX supply voltage (VRX) 2.7 2.8 2.85 V Regulated RX supply current 0.05 50 mA Regulated TX supply voltage (VTX) 2.7 2.8 2.85 V Regulated TX supply current 0.02 60 mA Current consumption standby mode 65 mA Current consumption sleep mode 11 mA Current consumption conv. low power 650 mA

Maximum Unit / Notes

idle mode)

cutoff)

Current consumption conv. high power 1100 mA

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 11

THF-13

System Module NH2

PAMS Technical Documentation

Battery connector

The electrical specifications for the battery connector:.

Pin Name Min Typ Max Unit Notes

1 BVOLT 3.2 3.6 4.5 V Battery voltage

5.3 Maximum voltage in idle state with charger

2 BSI

3 BTEMP

0 2.85 V Battery size indication

Phone has 100kohm pull up resistor.

2.2 18 kohm Battery indication resistor (Ni battery) 20 22 24 kohm Battery indication resistor (service battery) 27 51 kohm Battery indication resistor (4.1V Lithium

battery)

68 91 kohm Battery indication resistor (4.2V Lithium bat-

tery)

0 1.4 V Battery temperature indication

Phone has a 100k (+–5%) pullup resistor,

Battery package has a NTC pulldown resis-

tor:

47k+–5%@+25C , B=4050+–3%

20 22 25 kHz PWM control to VIBRA BATTERY

4 BGND 0 0 V Battery ground

UIF–connector

The electrical specifications for the User Interface connector:

Signal Name Pin Notes

VL 1–2 Logic supply voltage 2.8V ROW0,1,2 4–6 Lines for keyboard write BACKLIGHT 22,23 Backlights supply COL0–6 7–11,15,16 Lines for keyboard read LCD_CLK 17 External LCD clock LCD_SCLK 18 LCD Driver serialclock LCD_SDAT 19 LCD Driver serialdata LCD_CS 20 LCD Driver chipselect LCD_DC 21 LCD Driver data/control select LCD_RESET 22 LCD Driver reset GND 25–28 Ground

Page 12

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

CTRLU Circuit

Block Description

CTRLU – CONNECTORU

Between MCU and system connector all data lines are protected for ESD.

HEAD_DET, Headset detection

Headset is detected by voltage level in XMIC line, it goes to MCU A/D converter. When headset is not connected HEAD_DET DC level is same as VL because of pull up resistor. When headset is connected DC level drops so that if can be detected. In talk mode mic bias current is fed to headset with HEAD_BIAS control it also increases the voltage level in XMIC line which must be noticed.

HOOK_DET, Hook detection

Hook in headset is detected with MCU input port. HOOK_DET line goes low when button is pushed in headset.

THF-13

System Module NH2

CTRLU – PWRU

The MCU controls the watchdog timer in the PSA. It sends a positive pulse at approximately 1 s interval to XPWROFF pin of the PSA to keep the power on. If CTRLU fails to deliver this pulse, the PSA will remove power from the system. CTRLU controls also the charger on/off switching in the PWRU block. When power off is requested CTRLU leaves PSA watchdog without reset. After the watchdog has elapsed PSA cuts off the supply voltages from the phone. Battery charging is controlled by CSW line.

VBATSW, Battery voltage measurement

Battery voltage can be measured up–to 6.2V with 2.8 V reference voltage. The absolute accuracy is low because of the reference 3 % accuracy and A/D–converter +/– 8 LSB accuracy . This battery voltage measurement must be calibrated with input voltage 4.1 V. The A/D conversion result can be calculated from this equation:

A/D readout = 1024 * (VBAT* ( 0.45)) / VREF VREF=2.8 V For example:

4.1 V results =674

ICHARG, Charger current measurement

Charger current is calculated from the voltage difference of the ends of the shunt resistor that the charging current goes thru. The difference of these voltages are first amplified by factor of 6.8 with op–amp to get more accuracy to the measurement measured from different ends of charging current shunt resistor. The absolute accuracy is low because there is very small change in voltages with different currents . The measurement error is minimized with calibration of the A/D–converter with 0 A and 0.5 A charging currents.

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 13

THF-13

System Module NH2

VCHARG , Charger voltage measurement

Charger voltage can be measured up to 16.8 V nominal. The A/D–conversion result can be calculated from equation :

A/D readout = 1024 * (VCHARG*(10/60)) / VREF

VREF=2.8 V

For example:

7.5 V gives 457

BSI, Battery size indication

The battery type can be defined with the BSI resistor value. Batteries with different capacities and with different cell types can be defined individually, BSI is calibrated with service battery.

BTEMP, Battery temperature measurement

The battery temperature measurement is implemented with 47 kohm NTC with N value of 4050 and 47 kohm pullup resistor. BTEMP is calibrated with service battery.

PAMS Technical Documentation

CTRLU – AUDIO

The interface between the MCU and the MASI circuit is a bidirectional 8–bit data bus with 5 address lines. MASI is connected to the same address bus as Flash and SRAM memories, MASI has own address space. MASI has one separate control line XINT for interrupt output to MCU.

CTRLU – UIF

The keyboard is connected directly to the controller. Data lines 0–7 are input lines and ROW0–2 are output lines. Normally all ROW lines are set to ’0’ and if any key is pressed the KBINT line indicates it to MASI and MASI gives an interrupt to MCU which the starts scanning the keys. The scanning is done by driving one ROW line to 0 V at the time, then the corresponding data line goes to 0V and phone knows which key is pressed. ROW(0:2) lines must be in 0 V state when phone is in sleep mode so that key pressing can be indicated.

Data to LCD Driver is written through a serial port which is used to control RTC and EEPROM too.

Keyboards and LCD lights are controlled by LIGHTS signal.

CTRLU – RX

The RX circuit power is connected on/off by the RXE signal. Received signal strength is measured over the RSSI and intermediate fre-

quency is measured over the IF.

CTRLU – SYNT

RF temperature is measured over the RFTEMP. Frequency is controlled by AFC signal. Synthesizer is controlled via synchronous serial bus

Page 14

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

SDAT/SCLK. The data is latched to the synthesizer by the positive edge of SLE line. TX synthesizer power on/off (TXS/port P3) line is controlled via PLL circuit.

CTRLU – TX

Transmitter output power level is measured over the TXI. TXE line activates power module. The power is controlled via TXC line which is PWM– controlled output port.

Main Components MCU

MCU H8/2322 is a CMOS microcontroller. The CPU is ROMless so all memory needed is located outside the chip.

MCU operating clock (=14.7456 MHz) is generated in the MASI.

THF-13

System Module NH2

Controller Ports

Pin no Symbol Description Pin type

1 Vcc 2–23 A0–A19 FLASH,MASI and RAM Address bus address 24 Ass 25 A20 NC I 26 PA5 NC I 27 PA6 NC I 28 PA7 NC I 29 P67 NC I 30 P66 HOOK_DET Handset HOOK signal I 31 P65 HEAD_BIAS Headset microphone bias control I/O 32 P64 XINT interrupt signal from MASI I/O 33 Vcc 34–37,

39–46, 48–51

D0–D15 Data bus Data

38,47 Vss 52 Vcc 53 P30/TxD0 MBUSTX I/O 54 P31/TxD1 LCD_SDAT, RTC_SDAT, EEPROM_SDAT I/O 55 P32/RxD0 MBUSRX I/O 56 P33/RxD1 VPPCON I/O 57 P34/SCK0 ROW1 I/O

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 15

THF-13

System Module NH2

58 P35/SCk1 LCD_SCLK I/O 59 Vss

PAMS Technical Documentation

60 P60/CS4/

_DREQ0

61 P61/CS5/

_TEND0

62 P62/_DREQ1ECLK serial clock (EEPROM, RTC) I/O

63 P63/_TEND1LIGHTS I/O

64 P27 SLE I/O 65 P26 ROW0 I/O 66 P25 MBUSRX timer I/O 67 P24 SCLK serial clock for SYNT I/O 68 P23 SIS_SDAT I/O 69 P22 TXE I/O 70 P21 SIS RESET I/O 71 P20 RXE I/O 72 _WDTOVF–

NC I

73 _RES XRES reset for MCU, FLASH, MASI from PSA 74 NMI – 75 _STBY – 76 Vcc 77 XTAL – 78 EXTAL CLKMCU from MASI 79 Vss 80 PF7 PWRON I 81 Vcc 82 _AS – 83 _RD FLASH,MASI,RAM Read 84 _HWR MASI, RAM Write 85 _LWR FLASH Write 86 PF2 LCD_CS I/O 87 PF1 LCD_DC I/O 88 PF0 LCD_RESET I/O 89 P50/TxD2 FBUSTX / BOOST0 I/O 90 P51/RxD2 FBUSRX / BOOST1 I/O

Page 16

 Nokia Mobile Phones Ltd.

Issue 1 08/99

THF-13

PAMS Technical Documentation

91 * P52/SCK2 MBUS RX used for FBUS CLK I/O 92 P53 SIS SCLK I/O 93 AVcc 94 Vref 95 AN0 VBATSW Analog 96 AN1 VCHARG Analog 97 AN2 RSSI Analog 98 AN3 ICHARG Analog 99 AN4 BTEMP Analog 100 AN5 BSI Analog 101 AN6 RFTEMP Analog 102 AN7 HEAD_DET Analog 103 AVss

System Module NH2

104 Vss 105 P17 LIM I/O 106 P16 TXC I/O 107 P15 CDET I/O 108 P14 CSW I/O 109 P13 XPWROFF I/O 110 P12 111 P11 SYNTH SDAT I/O 112 P10 VIBRA I/O 113 MD0 0 114 MD1 0 115 MD2 1 116 PG0 ROW2 I 117 PG1 NC I 118 PG2 RAMCS I 119 PG2 MASICS I 120 PG2 FLASHCS I

– FLASH memory 1Mx16 with 16 bit databus – SRAM memory 16kx8 with 8 bit databus

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 17

THF-13

System Module NH2

SIS

AT90S2343 is the SIS (subscriber identification) circuit connected to the controller over serial bus IIC. The signals are listed below:

Pin Description

EXTAL Clock input from MASI RESET Reset input PD0 IIC bus data PD1 IIC bus clock

EEPROM

There is one 16k EEPROMs in phone. EEPROM is a nonvolatile memory into which is stored the tuning data for the phone. In addition, it contains the short code memory locations to retain user selectable phone numbers. SDAT line is used for control LCD and RTC too.

PAMS Technical Documentation

Pin Description

SDA IIC bus data SCL IIC bus clock

RTC

The real time clock is connected to the same IIC bus as the EEPROM. RTC alarm interrupt is connected to the XPRWON line, so it works even if phone is powered off. Backup power supply to the RTC is done with a separate battery which is charged through the CHAPS.

Page 18

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

PWRU

Power Distribution

The main components of the Power Unit are the PSA ( Power Supply Asic) and the CHAPS ( Charger Power Switch ).

In normal operation the baseband is powered from the phone‘s battery. The battery consists of three Nickel Metal Hydride cells. There is also a possibility to use batteries consisting of one Lithium–Ion cell. An external charger is used for recharging the battery and supplying power to the phone. The charger can be either a standard charger that can deliver around 400 mA or a so called performance charger, which can deliver supply current up to 850 mA.

The baseband contains components that control the power distribution to the whole phone excluding those parts that use continuous battery supply. The battery feeds power directly to three parts of the system: PSA, RF–power amplifier, and UI (buzzer and display and keyboard lights).

THF-13

System Module NH2

The power management circuit CHAPS provides protection against overvoltages, charger failures and pirate chargers etc. that could otherwise cause damage to the phone.

Battery charging

Acceptable chargers are detected by the software. The absolute maximum input voltage is 30V due to the transient suppressor that is protecting the charger input. At the phone end there is no difference between a plug–in charger or a desktop charger. The DC–jack pins and bottom connector charging pads are connected together inside the phone. The charging block diagram is below.

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 19

THF-13

System Module NH2

PAMS Technical Documentation

LIM

CSW

MCU

0R22

VBAT

VBATSW

VCHARGSW

PSA

GND

VCHAR

LIM

VOUT RSENSE PWM

10k

22p

CHAPS

VCH

GND

TRANSCEIVER

50.3k

10k

Figure 2. Charging block diagram

30V

VIN

CHRG_CTRL

L_GND

CHARGER

NOT IN ACP–7

Startup charging

When a charger is connected, the CHAPS is supplying a startup current minimum of 130mA to the phone. The startup current provides initial charging to a phone with an empty battery. The startup circuit charges the battery until the battery voltage level reaches 3.0V (+/– 0.1V) and the PSA releases the PURX reset signal and program execution starts. Charging mode is changed from startup charging to PWM charging that is controlled by the MCU software. If the battery voltage reaches 3.55V (3.75V maximum) before the program has taken control over the charging, the startup current is switched off. The startup current is switched on again when the battery voltage has decreased to 100mV (nominal).

Startup characteristics are listed below:

Parameter Symbol Min Typ Max Unit

VOUT Start– up mode cutoff limit Vstart 3.45 3.55 3.75 V

VOUT Start– up mode hysteresis

NOTE: Cout = 4.7 uF

Start–up regulator output current

VOUT = 0V ... Vstart

Vstarthys 80 100 200 mV

Istart 130 165 200 mA

Battery overvoltage protection

Output overvoltage protection is used to protect phone from damage. This function is also used to define the protection cutoff voltage for differ-

Page 20

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

ent battery types (Li or Ni). The power switch is immediately turned OFF if the voltage in VOUT rises above the selected limit VLIM1 or VLIM2.

VLIM characteristics are listed below:

Parameter Symbol LIM input Min Typ Max Unit

THF-13

System Module NH2

Output voltage cutoff limit (during transmission or Li–battery)

Output voltage cutoff limit (no

transmission or Ni–battery)

The voltage limit (VLIM1 or VLIM2) is selected by logic LOW or logic HIGH on the CHAPS (N101) LIM– input pin. Default value is lower limit VLIM1.

When the switch in output overvoltage situation has once turned OFF, it stays OFF until the the battery voltage falls below VLIM1 (or VLIM2) and PWM = LOW is detected. The switch can be turned on again by setting PWM = HIGH.

VCH

VCH<VOUT

VOUT

VLIM1 or VLIM2

VLIM1 LOW 4.4 4.6 4.8 V

VLIM2 HIGH 4.8 5.0 5.2 V

SWITCH

PWM (32Hz)

ON OFF

Figure above: Battery overvoltage protection

Battery removal during charging

Output overvoltage protection is also needed in case the main battery is removed when a charger connected or a charger is connected before the battery is connected to the phone.

With a charger connected, if VOUT exceeds VLIM1 (or VLIM2), the CHAPS turns switch OFF until the charger input has decreased below

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 21

THF-13

System Module NH2

Vpor (nominal 3.0V, maximum 3.4V). The MCU software stops the charging (turn off PWM) when it detects that the battery has been removed. The CHAPS remains in protection state as long as the PWM stays HIGH after the output overvoltage situation has occurred.

PAMS Technical Documentation

VCH (Standard Charger)

VOUT

PWM

SWITCH

Vpor

VLIM

Vstart

”1”

”0”

OFF

Droop depends on load

& C in phone

Istart off due to VCH<Vpor

Vstarthys

1.1Battery removed, (standard) charger connected, VOUT rises (follows charger voltage)

2. VOUT exceeds limit VLIM(X), switch is turned immediately OFF

3.3VOUT falls (because no battery) , also VCH<Vpor (standard chargers full–rectified output). When VCH > Vpor and VOUT < VLIM(X) –> switch turned on again (also PWM is still HIGH) and VOUT again exceeds VLIM(X).

4. Software sets PWM = LOW –> CHAPS does not enter PWM mode

5. PWM low –> Startup mode, startup current flows until Vstart limit reached

6. VOUT exceeds limit Vstart, Istart is turned off

7. VCH falls below Vpor

Figure above: Battery removal during charging

Different PWM frequencies ( 1Hz and 32 Hz)

When a travel charger (2– wire charger) is used, the power switch is turned ON and OFF by the PWM input when the PWM rate is 1Hz. When the PWM is HIGH, the switch is ON and the output current Iout = charger current – CHAPS supply current. When PWM is LOW, the switch is OFF and the output current Iout = 0. To prevent the switching transients inducing noise in audio circuitry of the phone soft switching is used.

Page 22

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

The performance travel charger (3– wire charger) is controlled with PWM at a frequency of 32Hz. When the PWM rate is 32Hz CHAPS keeps the power switch continuously in the ON state.

THF-13

System Module NH2

SWITCH

PWM (1Hz)

SWITCH

PWM (32Hz)

Figure above: Switch control with 2Hz and 32Hz frequencies (in this case 50% duty cycle)

Vibrator battery schematic diagram below.

ON ONON OFF OFF

Vibra

BATTERY

Issue 1 08/99

22k

100n

10n

VBAT

100k

10n

47k NTC

BSI

BTEMP

GND

 Nokia Mobile Phones Ltd.

TRANSCEIVER

10k

BTEMP

MCU

10k

VIBRAPWM

Page 23

THF-13

System Module NH2

Supply voltage regulators and controlling

The heart of the power distribution is the PSA asic. It includes all the voltage regulators and feeds power to the whole system. The baseband digital and analog parts are powered from the VL and VA regulators which provide the 2.82 V baseband supply. The baseband regulators are active when the phone is powered on.

The PSA includes also two 2.82 V regulators (VRX and VTX) providing power to the RF section. These regulators can be controlled by the direct control signals from the MCU. The VRX regulator can also be controlled by the signal from the NASTA.

– VTX_ENA ( from MCU ) controls VTX regulator – PSBS_ENA ( from NASTA ) controls VRX regulator

PAMS Technical Documentation

In addition PSA includes also the functions listed below: – Buffer for the M2BUS.

The buffer translates the logical input signal to open–drain output. M2BUS truth table below.

Input Output

LOW LOW

HIGH Z

– Power on/off and reset logic. The Power off logic can be used as a

watchdog.

– Supply voltage monitor and automatic reset/power–off.

VBATSW is internally divided and buffered battery voltage output. The A/D –converter input monitoring the battery voltage can be connected here. The circuit monitors the voltage at the VBAT input and forces the circuit to Reset if the voltage level is below allowed limit voltage, VBATcoff–. A hysteresis is included to prevent oscillation between different states.

– Battery charger detection.

Externally divided charger voltage VCHAR goes through PSA internal switch to VCHARSW output. The A/D –converter input monitoring the charger voltage can be connected here.

Page 24

– Automatic on–chip current limiting – On–chip thermal shutdown, which protects PSA from overheating.

Thermal shutdown includes hysteresis in order to prevent oscillation during the thermal protection.

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

Regulators VA and VL characteristics are listed in the next table:

THF-13

System Module NH2

Parameter Test Conditions

Output Voltage VL, VA 2.73

Output current of the regulator (all regulators enabled)

Quiescent current

VL: Iload = 0mA

Iload = 40mA

VA: Iload = 0mA

Iload = 100mA

Quiescent current Tamb = +25_C, VBAT=3.6V

VL: Iload = 0mA

Iload = 40mA

VA: Iload = 0mA

Iload = 100mA

Quiescent current in Power–Off

VL VA

Line regulation: VL, VA

IoutVL = 40mA, IoutVL = 100mA,

3.25VVBAT5.2V

Symbol Limits

Min Typ Max

Iout Iout

VL VA

040 0 100

Iqoff

, VA

line

2.82

110 130 110 130

Unit

2.90 mA

200 220 200 220

A A A A

6 15

A A

20 mV

Load regulation: VL, VA

0mAIloadVL40mA, 0mAIloadVA100mA,

3.25VVBAT5.2V

Line transient:

AC=0.5V square wave Slew rate = 50 mV/s f = 500Hz ... 2kHz

3.5VVBAT5.2V

Load transient: VL, VA

IloadVL 100A to 40mA, Iload

100A to 100mA in

10s

3.25VVBAT5.2V

Current limit (VL,VA = 0V)

VL VA

Power Supply Ripple Rejection

3.2VVBAT5.2V

0mAIloadVL40mA,

0mAIloadVA100mA

f = 10Hz ... 10kHz

Settling time

Cload=1F20% load current 0mA

load

linet

V Trec

Note 1

lim

, VA

r, VA

load

linetr

40 dB

30 mV

40 20

60 180 150 450

PSRR 40 dB

160 s

Note 2

mV s

mA mA

Issue 1 08/99

E Nokia Mobile Phones Ltd.

Page 25

THF-13

System Module NH2

Note 1: Voltage deviation (V) is the output voltage overshoot in tran- sient response. Recovery time (Trec) is the time from the beginning of the transient response to the time point when the regulator output voltage first crosses the final stable value after overshoot.

Note 2: Settling time is defined from the time point of mode change Power–Off to Reset to the time when regulator output voltage is within 5% of the final value.

The characteristics of the regulators VRX and VTX are listed below:

PAMS Technical Documentation

Parameter Test Conditions

Output Voltage VRX, VTX 2.73

Output currents of the regulators (all regulators enabled)

Quiescent current

VRX: Iload = 0A

Iload = 50mA

VTX: Iload = 0A

Iload = 60mA

Quiescent current

Tamb = +25_C, VBAT=3.6V VRX: Iload = 0A

Iload = 50mA

VTX: Iload = 0A

Iload = 60mA

Quiescent current in Power–Off

VRX VTX

Line regulation: VRX, VTX

IoutVRX = 50mA, IoutVTX = 60mA,

3.25VVBAT5.2V

Symbol Limits

Min Typ Max

Iout Iout

VRX VTX

0.05 50

0.02 60

Iqoff

VRX

line,

VTX

line

2.82

180 195 180 195

Unit

2.90 mA

320 360 320 360

A A A A

14 17

A A

20 mV

Load regulation: VRX, VTX

50AIload 20AIload

VRX VTX

50mA,

60mA,

3.25VVBAT5.2V

Line transient: VRX, VTX

AC=0.5Vpp square wave Slew rate = 50 mV/s

f = 500Hz .... 2kHz

3.5VVBAT5.2V

Load transient: VRX, VTX

Iload IloadV

50A to 50mA,

VRX

20A to 60mA in 10s

3.25VVBAT5.2V

Page 26

VRX

load,

linetr,

VTX

load

linetr

V Trec

Note 1

E Nokia Mobile Phones Ltd.

30 mV

40 dB

40 20

mV s

Issue 1 08/99

PAMS Technical Documentation

THF-13

System Module NH2

Test Conditions Current limit (VRX,VTX = 0V)

VRX VTX

Power supply ripple rejection

3.25VVBAT5.2V 50AIload 20AIload

f = 10Hz.....10kHz

f = 10Hz.....50kHz

f = 10Hz.....100kHz

Settling time,

Cload=1F20% load current 0mA

VRX VTX

50mA,

60mA,

Note 1: Voltage deviation (V) is the output voltage overshoot in tran- sient response. Recovery time (Trec) is the time from the beginning of the transient response to the time point when the regulator output voltage first crosses the final stable value after overshoot.

Note 2: Settling time is defined from VTX_ENA/VRX_ENA rise to the time when regulator output voltage is within 5% of the final value.

SymbolParameter

lim

PSRR

VRX,VTX

Note 2

Min Typ Max

75 225 90 270

50 40 35

100 s

UnitLimits

mA mA

dB dB dB

Operation modes

The circuit has three operational modes: Power–Off, Reset and Power– On. The additional modes are the Protection mode and Battery disconnected (VBAT < VRth, master reset threshold). Respective conditions of the external signals are described in the next table.

MODE PURX VRX_ENAVTX_ENAVLVAVRX VTX VBATSW VCHAR

–SW

Power–

Off

Reset

Power–

LOW X X Z Z Z Z Z LOW

LOW L L 2.8V Z Z Z Z LOW LOW H H 2.8V 2.8V 2.8V Z Z LOW

HIGH

L L 2.8V Z Z VBATSW VCHAR XPWRONX

H H 2.8V 2.8V 2.8V VBATSW VCHAR XPWRONX

NOTE: VBATSW and VCHARSW are controlled by internal VSW_ENA– signal during power–on.

NOTE: PWRONBUFF is an inverted (and buffered) PWRONX. A logic LOW level at PWRONX (active LOW) will force a logic HIGH level at PWRONBUFF.

PWRON-

BUFF

Power–Off Mode

In order to be in Power–Off mode VBAT must be above VRth. During Power–Off mode PURX is at logical low level. VA, VL, VRX and

VTX regulators are disabled and in high–Z low output state.

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 27

THF-13

System Module NH2

Entering Power–Off Mode

The PSA contains a watchdog counter that is reset by writing ”1” – ”0” sequence to input PWROFFX.

The circuit goes to Power–off mode from Power–On after delay Toff if watchdog has not been reset during this time.

The other possibility to enter the Power–Off is from Reset, if the PSA can not enter Power–On mode because VBATcoff+ is not reached. This means that watchdog elapses before the microcontroller is able to produce a pulse to PWROFFX. If charger is present (VCHAR>VCHARth), transition from Reset to Power–Off can not occur but the circuit stays in Reset mode as long as battery has been charged above VBATcoff+.

The circuit goes to battery disconnected mode if battery voltage drops below master reset threshold (VRth–).

For testing purposes the watchdog can be disabled and reset by grounding the WD_DISX pin. In normal use it can be left floating (internal pull up).

PAMS Technical Documentation

Charging in Power–Off

Charging is not possible in Power–Off. Connecting a charger during Power–Off generates a rising edge on VCHAR input and the circuit enters Reset mode. Circuit stays in Reset as long as the battery is charged to the limit VBATcoff+.

If the watchdog elapses during Power–On when charger is connected, the circuit goes to Power–Off. Because charger detection is level sensitive, charger is detected and the circuit goes via Reset mode to Power– On mode.

Reset Mode

The circuit goes into Reset mode from Power–Off when: – the battery voltage is initiated (master reset) or – logic low voltage in PWRONX is detected or – charger voltage becomes available or – when recovering from Protection mode In Reset mode the VL and VA outputs are activated by an internal enable

signal. The VRX and VTX have external enable inputs VRX_ENA and VTX_ENA. VBATSW and VCHARSW are disabled and PURX is LOW.

Page 28

The circuit leaves the Reset mode after a delay Trd for Power–On if VBAT > VBATcoff+. Watchdog is reset when Power–On mode is entered.

The circuit goes into Reset mode from Power–On when the battery voltage VBAT drops below VBATcoff–.

VBAT is monitored internally, hence if voltage VBAT drops below the threshold (determined by internal resistors), transition from Power–on to

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

Reset mode is done. If VBAT doesn’t rise back above reset release limit in time T

the Watchdog elapses and the circuit powers off.

off

To avoid PSA going to RESET mode due to fast transient, transition from Power–On to Reset mode is not done if VBAT is below VBATcoff– for shorter time than threshold detection delay T

The circuit leaves the Reset mode after a delay Trd if VBAT > VBATcoff+.

VBAT

VBATcoff + VBATcoff VBATcoff –

THF-13

System Module NH2

dd.

T>TddT<Tdd

PURX

The figure above describes the threshold detection delay Tdd and PURX reaction time Trr.

Power–On Mode

In Power–on mode all the functions are active. VBATSW and VCHARSW outputs are activated by the internal enable signal VSW_ENA. PURX is high in Power–On.

From Power–On mode the circuit goes to Power–Off mode after a delay Toff (watchdog delay set by an external capacitor Cosc) if no writing sequence to PWROFFX from logical high level to low level has detected during this time.

In Power_on mode the circuit does not react on PWRONX pulse i.e. the circuit must be switched off by the system by not updating the watchdog writing in time Toff.

Tdd Trr

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 29

THF-13

System Module NH2

AUDIO BLOCK

The Audio Block comprises the MASI, which is is a single chip audio/signalling processor in a 64 TQFP package for NMT450 system

Main features

– Low power consumption modes – 8 bit parallel interface with pull ups – FM demodulator

FFSK modem features

– Full duplex 1200 baud signalling – FSK indicator and level detector – FII filter and gain control – DMS facility

PAMS Technical Documentation

Audio features

– Low noise microphone amplifier – Input for a handset microphone or an accessory – Microphone sensitivity compensation +24/–7 dB range (5 bits) – Compander – RX and TX filters – Tx hard limiter – Tx AGC – Transmitter compensation amplifier with +1.875/–1.875 dB range (4

bits)

– Compensation amplifier for different RX deviations with +7.5/0 dB

range (4 bits) – Volume control amplifier with –20/+17.5 range (4 bits) – Earphone amplifier with drive capability for ceramic earpiece – Buffered output for a handset or an accessory – Mute switches – Speech scrambler and descrambler – Hands free functions

Other features

– Driver for buzzer – Call continue sensor – Negative supply voltage for LCD – Dual and single tone multifrequency generator – IF counter – 8 bit general purpose DAC – Programmable output clocks with clock stop for MCU, LCD and SIS – Two external interrupt sources – Programmable timer – Summing stage for voice/data, signalling and fii

Page 30

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

System Module NH2

Technical specifications

AUDIO internal signal inputs are listed in the next table:

Signal Name Notes From

VBAT Battery voltage PWRU VA Analog supply voltage, 2.8V PWRU

XRES Reset line from PSA PWRU XMRD Read control signal CTRLU XMCS Chip select signal CTRLU

XMWR Write control signal CTRLU

MA0...A4 5–bit address bus CTRLU

MD0...D7 8–bit bidirectional data bus CTRLU

KBINT Keyboard interrupt CTRLU

MBUSINT MBUS interrupt CTRLU

HEAD_BIAS Headset microphone bias enable CTRLU

THF-13

IF (2nd) Intermediate frequency for MASI RX XMIC External audio input from accessories SYSTEM MICP Microphone (positive node) SYSTEM MICN Microphone (negative node) SYSTEM

AUDIO internal signal outputs are listed in the next table:

Signal Name Notes To

XEAR External audio output to accessories SYSTEM

ACCDET Accessory detection signal SYSTEM

MOD Audio output to synthesizer SYNT

AFC VCTCXO control SYNT

BUZZER Buzzer signal SYSTEM

EARP Earpiece (positive node) UIF

EARN Earpiece (negative node) UIF

CLKSIS Clock signal for SIS CTRLU

CLKLCD Clock signal for LCD UIF

CLKMCU Clock signal for MCU CTRLU

XINT Interrupt request to MCU CTRLU

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 31

THF-13

System Module NH2

PAMS Technical Documentation

The next table is the pin list of the MASI ASIC:

Pin no Symbol Pin type Notes

1 VDD1 PWR +2.7 ... 3.5 V Supply voltage for digital part 2 XCS DIN/pd Chip select signal, active state LOW, pull–down > 50 kW 3 A4 DIN/pu 5–bit address bus, MSB, pull–up > 50 kW 4 A3 DIN/pu 5–bit address bus, pull–up > 50 kW 5 A2 DIN/pu 5–bit address bus, pull–up > 50 kW 6 A1 DIN/pu 5–bit address bus, pull–up > 50 kW 7 A0 DIN/pu 5–bit address bus, LSB, pull–up > 50 kW 8 D7 DIO 8–bit bidirectional data bus MSB

9 D6 DIO 8–bit bidirectional data bus 10 D5 DIO 8–bit bidirectional data bus 11 D4 DIO 8–bit bidirectional data bus 12 D3 DIO 8–bit bidirectional data bus 13 D2 DIO 8–bit bidirectional data bus 14 D1 DIO 8–bit bidirectional data bus 15 D0 DIO 8–bit bidirectional data bus LSB 16 NMI DOUT Non maskable Interrupt request 17 VSS1 PWR 0 V Supply voltage, ground for digital part 18 XCLR DIN HW reset input, active state LOW 19 TMODE DIN/pd Test mode selection, pull–down > 50 kW 20 TSEL DIN/pd Scan test selection, pull–down > 50 kW 21 XINT DOUT Interrupt request to MCU, active state LOW 22 EXTINT1 DIN External interrupt request, falling edge active (note: this pin

is test scan select when TMODE is high) 23 EXTINT2 DIN External interrupt request, falling edge active 24 VDD2 PWR +2.7 ... 3.5 V Supply voltage for digital in Analog part 25 IF AIN IF input 26 DAF AIN Audio input 27 FILO AOUT Rxfilter output 28 EXPI AIN Expander/Descrambler input 29 EXPO AOUT Expander/Descrambler output 30 VOLI AIN Volume control amplifier input 31 VSA1 PWR 0 V Supply voltage, ground for RX Analog

(including EARAMP & EXTEAR) 32 EXTEAR AOUT Buffered output for handset or an accessory 33 EARP AOUT Earphone driver output, positive 34 VDA1 PWR + 2.7 ... 3.5 V Supply voltage for RX Analog

(including EARAMP & EXTEAR)

Page 32

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

NotesPin typeSymbolPin no

35 EARN AOUT Earphone driver output, negative 36 DACO AOUT DA converter output 37 CALLCNT AIN Voltage sensor input for battery change during call 38 REF AOUT Internal analog signal ground, stabilization capasitor 39 ATOUT AOUT Analog test circuit output 40 MIC AIN Microphone amplifier input, 41 BIMIC AOUT Microphone bias output 42 CMIC AIN Microphone bias current stabilizing capasitor 43 EXTMIC AIN Audio input for a handset or an accessory 44 TXPBO AOUT Transmit bandpass filter (scrambler) output 45 COMI AIN Compressor input 46 MOD AOUT transmit path output 47 ATST AOUT Analog test output

System Module NH2

THF-13

48 VDA2 PWR + 2.7 ... 3.5 V Supply voltage for TX Analog & NVSGEN 49 NSV AOUT Negative supply voltage, –7V output 50 NSV2 AOUT negative supply voltage –4.66V, for external capacitor 51 NSV1 AOUT negative supply voltage –2.33V, for external capacitor 52 NCPP AOUT Negative supply charge pump (external) capacitor positive 53 NCPN AOUT Negative supply charge pump (external) capacitor negative 54 VSA2 PWR 0 V Supply voltage, ground for TX Analog & NVSGEN 55 TOUT DOUT Test scan data output 56 CLKIN CIN 14.7456 MHz crystal oscillator input or input for the external

clock 57 CLKOUT COUT 14.7456 MHz crystal oscillator output 58 VSS2 PWR 0 V Supply voltage,

ground for digital in Analog part & Buzzer 59 BUZZ AOUT Buzzer output, open collector 60 CLKLCD DOUT Clock signal for LCD, 230.4 kHz, 57.6 kHz or 14.4 kHz 61 CLKSIS DOUT Clock signal for SIS processor, 3.6864MHz or 7.3728MHz 62 CLKMCU DOUT Clock signal for MCU, 3.6864 MHz, 7.3728 MHz or 14.7456

MHz 63 XWR DIN/pu Write control signal, active state LOW, pull–up > 50 kW 64 XRD DIN/pd Read control signal, active state LOW, pull–down > 50 kW

Receive (RX) Audio Signal Path

The incoming IF signal is first FM demodulated and then connected to RX trimmer to compensate variation of nominal frequency deviation in different systems.

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 33

THF-13

System Module NH2

Receiving Data Path

The data from RX trimmer is filtered in the modems RX filter (MODRXFIL) which includes de–emphasis function and from there to FSK discriminator. Further from FSK discriminator data is connected to detecting filter (DETFIL) and from there to digital phase locked loop (DPLL).

Functional blocks of data reception path: – FM demodulator

– RX trimmer – De–emphasis filter – Modems RX filter – FSK indicator – FSK level detector – FSK discriminator – Detecting filter – Digital phase locked loop – Reception controller – Receivers register

PAMS Technical Documentation

Receiving Audio Path

FM demodulated audio signal is connected to the mux (RXMUX). There is also possibility to select three other signals in the RXMUX (DTMF, rx mute or audio test loop). Rx audio signal is 1:2 expanded and filtered in bandpass filter (RXFIL). Rx volume level is controlled with amplifier (VOL) in the range –20 ... +17.5 dB.

If scrambling is in use signal is first expanded and then pre–emphasised. Pre–emphasised signal is the descrambled and de–emphasised.

Hands free control block (HFCONTR) includes a bandpass filter, window comparator and controller for rx and tx attenuators. Rx hands free attenuator (RXATT) has selectable minimum gain from –30 ... –21 dB to max 0 dB. Rx and tx attenuation sum is always constant at hf use (–30 ... –21 dB).

There is also an extra filter (EARSFIL) for people who has a hearing defect. This filter emphases frequencies which are most sensitive in human ear. Frequency response is +6 dB/oct from 0 to 1300 Hz and –3 dB from 1300 to 3400 Hz. This filter can be enabled by a control bit.

Normally signal is going to earphone amplifier (EAR). Signal is also available at the output of accessory buffer (ACC).

Functional blocks of audio rx path: – FM demodulator

– RX trimmer – RX mux – De–emphasis filter – Expander – RX filter – De–scrambler (in conjugation with extra pre–emphasis and de–em-

phasis)

Page 34

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

– RX automatic gain control – Ear sensitive filter – Volume control – Earphone and accessory buffers

RX Trimmer

Rx trimmer range is 0 .. +7 dB and step 0.5 dB. Anti-alias filter is a lowpass filter which attenuates high frequency noise

before switched filters (fiifil, modrxfil and rxfil). It’s nominal gain is 0 dB.

Mux and de–emphasis

The input source (DTMF, DAF, ALOOP or mute) selects the input source by bits RXSRCE(1:0) in register ACRB.

De–emphasis filter’s response is –6 dB/oct between 300 ... 3000 Hz. De– emphasis is bypassed when BPEMP in ARCA is high and gain is then 0 dB.

THF-13

System Module NH2

Expander

Expander’s ratio is 1:2 in decibel scale. It is expanding dynamic of compressed speech back to normal. Gain in expander is min –24 ... +10 dB. Expander’s attack time is 4 ms and decay time 9 ms. It can be bypassed by bit BPEXP in reg ACRA. Bypass gain is +3 dB. Unaffected level is 100 mV (100 mV in gives 100 mV out). Expander can be set to work as compressor by bit RXCOMPEN in reg ACRA.

RX filter

Passband of rx bandpass filter is 300 ... 3000 Hz for speech.

De–scrambler

De–scrambler splits audio band into upper and lower frequency bands, inverts both bands and sums them for clear signal. Possible splitting frequencies are 1130 Hz, 1380 Hz, 1600 Hz and 2140 Hz. De–scrambling can be enabled and splitting frequency selected in register ACRI.

RX automatic gain control

The function of RXAGC is to keep level of received signal below specified reference value.

Ear sensitive filter

The Bandpass speech spectrum is taking into attention the sensitivity of ear.

Volume control

Volume is controlled with an adjustable gain amplifier. Range is –20 ... +17.5 dB and step is 2.5 dB (16 levels). Level is selected by bits VOL(3:0) in register ACRB.

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 35

THF-13

System Module NH2

Earphone and accessory buffers

Earphone buffer is a differential amplifier. It is capable of driving 26 ohm dynamic earphone. Earphone buffer is enabled by bit ACTEARP in register ACRB.

Accessory buffer is for accessory cable driving. It can be enabled by bit ACTACC in register ACRB.

Transmitting paths

Transmitting data path

The data to be transmitted will be loaded into the transmitting register TRREG. From the TRREG register the 8 bit data is transformed to serial data which is sent to the FSK modulator (FSKMOD) and then to the summing block (SUM).

PAMS Technical Documentation

Functional blocks in data transmission path: – Transmission controller

– Transmitters register – FSK modulator with pre–emphasis

Transmitting audio path

Microphone signal is fed to microphone amplifier (MICAM). Signal source is selected with a mux (TXMUX). Possible sources are own mic, accessories or DTMF generator. Tx hands free attenuator (TXATT) has selectable minimum gain from –30 ... –21 dB. The maximum gain is 0 dB. In mictrimmer (MICTRI) signal from different sources is tuned for nominal deviation. After the bandpass filter (TXBP) signal and 2:1 compressed in amplitude compressor (COMPR) and then pre–emphasised +6dB/oct (PREEM). Maximum level is set in AGC and limiter (LIM) blocks. Signal from LIM block is lowpass filtered (TXLP) and fed to trimmer for speech maximum deviation tuning. Output signal from TXLP is added to data and fii signals in SUM block.

If scrambling is in use signal is first emphasised and then scrambled and de–emphasised. Scrambled signal is then compressed and emphasised once more.

Page 36

DTMF generator (DTMFGEN) generates dual and single tones for rx and tx lines. Tolerance of DTMF frequencies is +–1.0 %.

Functional blocks of audio tx path: – Mic amplifier and mux

– Mic trimmer and bandpass filter – Scrambler (in conjugation with extra pre–emphasis and de–emphasis) – Compressor – Pre–emphasis – Soft limitter – Tx hard limiter

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

– Tx lowpass filter and tx trimmer – Summing unit, digital to analog converter and post filters

Mic amplifier and mux

Mic amplifier is a low noise amplifier. The gain is 26 dB for normal microphone use. The microphone bias current can be cut off, bit XMICBIA in reg ACRE. Input source is selected in TXMUX1 block by bits TXSRCE(1:0) in reg ACRA. Possible sources are MIC, EXTMIC, DTMF or mute.

Mic trimmer and bandpass filter

Bandpass filter is 300 ... 3000 Hz for speech. It includes a trimmer (bits MIC(4:0)) for mic/extmic level setting (nom deviation). Trimmer range is –7 ... +24 dB and step 1 dB. The output of TXBP can be used as a sidetone signal and can be added to the earphone and accessory signals.

THF-13

System Module NH2

Scrambler

Scrambler splits audio band into upper and lower frequency bands, inverts both bands and sums them for clear signal. Possible spitting frequencies are 1130 Hz, 1380 Hz, 1600 Hz and 2140 Hz. Scrambling can be enabled and splitting frequency selected in register ACRI.

Compressor

Compressing ratio is 2:1 in dB scale. Its purpose is to suppress speech dynamic range to avoid RF noise at air interface between phone and base station. Compressor has gain min –10 ... +22 dB. Dynamic area (max gain) is limited to get smaller residual noise. Compressor’s attack time 3 ms and decay time 14 ms. It can be bypassed by bit BYPASSC in register ACRA. Bypass gain is –3 dB. Unaffected level is 100 mV (100 mV in gives 100 mV out).

Pre–emphasis

Pre–emphasis filter gives +6 dB/oct emphasis between 300 ... 3000 Hz. It is a bandpass type filter having a pole at 4000 Hz. Filter gain is +3 dB (1kHz). Pre–emphasis is bypassed when control bit BPEMP in register ACRF is high and gain is then 0 dB.

Automatic Gain Control

Soft limiter is needed in order to suppress intermodulation. AGC measuring circuitry measures signal strength (rms) and signal will be attenuated if it’s level exceeds the threshold value.

Tx hard limiter

Limiting point is at 85% (400mVrms) of max level with 1 kHz signal.

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 37

THF-13

System Module NH2

Tx lowpass filter

The corner frequency of tx lowpass filter is 3400 Hz. Amplitude attenuation is 12 dB/oct after the corner point.

Tx audio level control

Additional limiter after lowpass filter.

Tx trimmer

Trimmer is for speech max level (deviation) setting. Speech level is referred to data level. TXTRI trimmer range is +–1.75 dB and step 0.5 dB.

Summing unit and trimmer

Summing unit combines speech, data and fii signals. TRCOM trimmer is used for modulation sensitivity compensation.

PAMS Technical Documentation

FII path

The FII signal is filtered and amplified with a 4 kHz bandpass filter (FIIFIL). The filtered FII is then fed to summing block (SUM).

Fii filtering and gain control

Fii signal at input pin IF is FM demodulated and filtered, amplified and looped to output MOD if control bits FIIEN and TALK are set. Fii filter is a 4 kHz bandpass filter. Fii loop gain can be controlled with control bits GCFII0...GCFII4 for temperature compensation. After reset (GCFII(4:0) = 0x0H) the gain is + 4.7 dB, which is the minimum value. Nominal gain of the loop is + 9.5 dB, which corresponds to control bit combination GCFII(4:0) = 0x10H. Maximum gain of + 14.0 dB is obtained when GCFII(4:0) = 0x1FH.

Hands free system

Hands free system detects the receiving signal and controls rx tx attenuators. If the level of received signal is high, the rx attenuation is low and the tx attenuation is high. The sum of these two attenuations is constant and selectable by bits SELHF(1:0) in register ACRA. Hands free operation is activated by bit ACTHF in register ACRA.

Functional blocks of hands free system

Hands free controller

A bandpass filter of the hands free controller filters drum and noise away. Hands free controller‘s audio signal is taken after volume control, so the volume level changes the hf detector sensitivity.

Page 38

– Hands free controller – Hands free attenuators

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

Window comparator detects (peak detector) the received audio level and opens rx line referred to that level. Control block is controlling RX TX attenuator gains. When the rx level is high (160 mV after volume) enough then RXATT gain goes to it‘s maximum 0 dB value. Hands free attack time is about 25 ms and decay time about 1200 ms. Slow attack time is for eliminating fast noise bursts.

Hand free functions are active when control bit ACTHF in register ACRA is high.

Hands free attenuators

Rx and tx lines has a hands free attenuator. Maximum attenuation is selectable from four levels: –30, –27, –24 or –21 dB. The TX (mic) gain lowest steps are bigger, because it gives a better duplex feeling to discussion.

Buzzer driver

THF-13

System Module NH2

Buzzer driver is a ’semi PWM’ signal generator. It detects rising edges of DTMF signal and generates a pulse on every rising edge. The length of the pulse can be set by writing length control word to the register BUZZVOL. The length is N * 2.17 us, where N is a value in BUZZVOL register. BUZZ is an open collector (open source) type buffer. Pin BUZZ sinks current during the pulse being otherwise in high impedance state.

Value 0x0H in BUZZVOL register disables buzzer driver i.e. BUZZP = BUZZN.

Clock divider

Clock divider generates internal clock frequencies by dividing master clock frequency which is created by an internal crystal oscillator and an external 14.7456 MHz crystal. External clock signal can also be used. If the external clock is used the oscillator output CLKOUT must not be loaded. Buffered crystal frequency can be obtained at pin CLKMCU directly or divided by two or four. 230.4kHz / 57.6kHz /14.4 kHz clock can be obtained at pin CLKLCD. Frequency can be selected with control bit SELLCDC.

Further clock signal for SIS processor is provided at pin CLKSIS and frequencies are 3.6864 MHz or 7.3728 MHz.

Call continue sensor

There is a requirement in NMT system specification that if battery voltage disappears during a call, call must be rebuild if battery voltage comes back in certain period of time. It should be possible even change battery during the call. For that purpose MCU sw must be able to check if call must be rebuild i.e. check if absence of battery voltage has been shorter than specified time (7 seconds). Measurement is made in a way that

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 39

THF-13

System Module NH2

charge of a external capacitor is discharged via an external resistor during the absence of battery voltage. When battery voltage is back and CPU sw runs again it reads CALLCNT bit from status register. CALLCNT is a result of comparison of voltage at pin CALLCNT (voltage over the capacitor) with preset threshold. If the voltage at pin CALLCNT is higher than threshold CALLCNT is low, otherwise high.

RF Module

Introduction

The RF module is designed for handportable cellular phone which operates in the NMT–450i system. The purpose of the module is to receive and demodulate the radio frequency signal from base station and to transmit modulated RF signal to base station.

The modulation method used in the phone is FM modulation (F3E).

PAMS Technical Documentation

The RF submodules are listed below:

Name of submodule

Rx module Tx module

Synthesizer module

All submodules are only functional blocks. They are constructed on same PCB and have no material codes by themselves.

Page 40

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

THF-13

System Module NH2

450 kHz FILTER

RSSI

IF CIRCUIT

TX BUFFER

TX VCO

MOD

LOOP FILTER

PLL

SLE

SCLK

SDATA

FMLOS

AFC

TXC

VCTCXO 14.85 MHz

TXE

VRX

VBAT

VTX

TXSYNE

IF AMPLIFIER

45 MHz

CRYSTAL FILTER

DIODE MIXER

RX–FILTER

LNA

UMA 1015

SYNTHESIZER IC

TANK CIRCUIT FOR 2.ND LO

PLL

LOOP FILTER

RX LO BUFFER

AGC

RX VCO

AMPLIFIER MODULE

VPLL

TX POWER CONTROL

POWER DETECTOR

Issue 1 08/99

ANTENNA

DUPLEX–FILTER

 Nokia Mobile Phones Ltd.

DIR_COUPLER

Page 41

THF-13

System Module NH2

Technical Specifications

Maximum ratings

The maximum battery voltage during transmission must not exceed 4.5 V. Higher battery voltages may destroy the power amplifier module. The maximum ratings are listed below:

Parameter Value

Battery voltage 5.3 V

Regulated supply voltage 2.73 – 2.90V

Operating temperature range –25 ... +55 ° C

PAMS Technical Documentation

SYNT

The RX module receives and demodulates the radio frequency signal from the base station.

The transmitter synthesizer generates a frequency modulated RF signal for the transmitter section. The transmission frequency is generated by a phase–locked loop (PLL). The synthesizer circuit contains VCO, synthesizer logic and loop filter.

The receiver synthesizer generates the first injection frequency to the receiver module. The local frequency is generated by a phase–locked loop as in transmitter synthesizer. The synthesizer circuit contains VCO, synthesizer logic and loop filter.

The Transmitter module generates and amplifies the RF signal to be transmitted to the base station.

Page 42

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

)

Current Consumption

In the following table the RF current consumption can be seen in different modes.

THF-13

System Module NH2

control signals

RXE TXSYNE TXE

H H H 1050

H H L 85 RX on, TX–syn-

H L L 49 RX on

L L L 0.150 all RF parts pow-

current con-

sumption (mA

500

Notes

power level 2

power level 0, 1

thesizer on

ered down

The current consumption of different RF parts can be seen in the following block diagram.

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 43

THF-13

System Module NH2

Current Consumption

VRX

12 mA

2 mA

PAMS Technical Documentation

LNA

TXE

IF amplifier

IF circuit

Battery Battery

3.6 V

regulator

2.7 V

VPLL

regulator

2.7 V

LO buffer

15 mA

RX–VCO

10 mA

Synthesizer IC

4 mA

VCTCXO

TXSYNE

15 mA

TX–VCO

Page 44

20 mA

regulator

2.7 V

20 mA

VTX

3 mA

950 mA

 Nokia Mobile Phones Ltd.

TX buffer

TX power

control

Issue 1 08/99

PAMS Technical Documentation

System Module NH2

Connections

Connections to Baseband sub–module

Connections to the BB module are listed below:

Signal Name Type Function

AFC Analog in The reference oscillator frequency adjust.

IF Analog out 2nd IF signal

MOD Analog in Modulation signal for transmitter (Audio + data)

RFTEMP Analog out RF temperature, which is determined by NTC resistor.

RSSI Analog out Received signal strength indicator. Voltage measurement.

SCLK Digital in Serial clock for synthesizer. Active state: Rising edge

SDATA Digital in Serial data for synthesizer. Active state: High

SLE Digital in Synthesizer enable. Active state: High

THF-13

TXC PWM in Transmitter power control TXE Digital in Transmitter on/off. High when on.

TXSYNE Analog out TX synthesizer power control

VBAT Power Battery voltage

VPLL Power Regulated voltage for synthesizer IC

VRX Power Regulated voltage for receiver & receiver synth

VPLL Power Regulated voltage for transmitter synth

Values for the digital control signal are listed below:

Supply voltage VDD 2.7 V

Logical 1 VOH VDD*0,7...VDD+0.3V Logical 0 VOL –0.3V...VDD*0,3 Logical 1 IOH <5mA Logical 0 IOL <5mA

VCTCXO signal specification is listed below:

CLKIN 14.85 MHz VCTCXO signal

Level 1 Vpp min

Load impedance 10 k W\\10pF +/– 10%

Start time < 60 mS after Vref rising

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 45

THF-13

System Module NH2

VCTCXO control signal specification is listed below:

AFC VCTCXO control voltage

Type analog signal (DC–level)

Level 0.1...2.7 V DC

Load impedance ZL > 10 kW

Control step size < 12 mV

lF signal specification is listed below:

IF 450 kHz 2nd IF signal

Level 300 mVp–p (typical) not speci-

Source impedance < 1.0 kW

MOD signal specification is listed below:

PAMS Technical Documentation

fied by manufacturer

MOD Modulation signal for trans-

mitter (Audio + data)

Type Analog signal

Nominal level 300 mV rms @3.0 kHz deviation

Load impedance ZL > 22 kW

RSSI signal specification is listed below:

RSSI Received signal strength in-

dicator

DC–level 0,5...1.6 V (–115...–45 dBm)

dynamic range 70 dB

Source impedance 56 kW

SCLK signal specification is listed below:

SCLK Serial clock for synthesizer

Type digital signal

Pulse width > 1 us

Page 46

SDAT signal specification is listed below:

SDAT Serial data for synthesizer

Type digital signal

Pulse width > 1 us

VALUES

Control byte xx100 000x x10000xx

(synte_initial_const)

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

Serial data for synthesizerSDAT

Reference divider 1188 (25 kHz channel)

THF-13

System Module NH2

Divider formulas for TX oscil-

lator

Divider formulas for RX oscil-

lator

(TX_synte_base_const1

(RX_synte_base_const1

SLE signal specification is listed below:

SLE Synthesizer enable

Type Digital signal

Function 0 = synthesizer enabled

1 = synthesizer disabled

RXE signal specification is listed below:

RXE Receiver enable

Type Digital signal

Function 0 = Receiver off

On–state current < 100 uA

TXC signal specification is listed below:

N = 2*ch +36238

8D,8E)

N = 2*ch +33438

82,9E)

1 = Receiver on

TXC Transmitter power control

Type PWM signal

Function Duty cycle of the TXC signal

defines the TX power level.

PWM frequency 30 kHz (7.2 kHz)

Level 0...3.3 V DC

Number of duty cycle steps 256

Load impedance > 100 kohm

TXE signal specification is listed below:

TXE Transmitter on/off control

Type Digital signal

Function 0 = TX off

1 = TX on

VBAT voltage values are listed below:

VBAT Battery voltage

Nominal value 3.6 V

Minimum value 3.2 V

Absolute maximum 5.2 V

Max. current 1.3 A

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 47

THF-13

System Module NH2

Antenna

The phone is fitted with a retractable antenna. The electrical length of antenna is 1/4 wave length.

Receiver

The receiver is a dual–conversion superheterodyne using two intermediate frequencies, 45 MHz and 450 kHz.

The RF signal from the duplexer RX port is applied to the low noise RF amplifier. The amplifier comprises the transistor V310. The amplifier stage input matching comprises C301, C302 and L301. R301 and R311 are included for biasing. The output matching comprises L311, C312 and C313.

The AGC circuit comprises V320 and V321. The AGC–off current is adjusted by R323. The AGC–on current is determined by R323 and R324.

PAMS Technical Documentation

Next the signal is filtered with Z330. After the filter the signal is fed to a single balanced diode mixer, comprising Z331, Z332, Z350 and V330.

After the mixer the 45 MHz IF signal is filtered with the crystal filter Z340. Matching between the mixer and the filter comprises L340, R340, C340 and C341. Next the IF signal is amplified by V360. The input matching comprises R341. The biasing comprises R360, R361 and R363. Capacitors C360 and C361 are included for RF bypassing.

The second mixer, IF amplifier and quadrature detector are all integrated in the circuit N370. The second LO frequency, 44.55 MHz, is the third harmonic of the VCTCXO frequency. The LO signal tank circuit comprises C372 and L371. After the mixer the 450kHz IF signal is filtered with the ceramic filter Z370.

The RSSI and 2nd IF signal (450 kHz) are fed to the audio/logic unit.

RX Synthesizer

The first injection frequency is generated by a digital phase locked loop (PLL). The PLL comprises a VCO, a loop filter and a PLL IC which includes reference and main dividers. The output frequency of the loop (LO) is obtained from a voltage–controlled oscillator (VCO) G520. Output level of VCO is 0 dBm +/– 2 dB. The VCO output signal is amplified by transistor V350 and fed to the receiver mixer via Z350. A portion of output signal is fed back to the synthesizer.

Page 48

The overall divisor of the chain is selected according to the desired channel.

The internal dividers of N400 are programmed with 17 bits, which are transferred serially on the SDATA (synthesizer data) line from the processor into an internal shift register also located in N400. Data transfer is timed with SCLK clock pulses.

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

The divided frequency is compared with a highly stable reference frequency from VCTCXO by a phase comparator in the PLL circuit (N400). The phase comparator controls the VCO frequency by means of a DC voltage through the loop filter so as to keep the divided frequency applied to the phase comparator equal to the fixed reference frequency.

The reference frequency is 12.5 kHz. This reference frequency is obtained from voltage controlled temperature compensated crystal oscillator (VCTCXO). The oscillator frequency is 14.85 MHz. The VCTCXO frequency is divided by 1188.

RX loop filter

The Phase comparator output is pin 3. If the VCO frequency is too high, the output goes low and discharge integrator capacitor C421. After this, the DC control voltage and the VCO frequency will decrease.

If the VCO frequency is too low, the output goes high and charge the integrator capacitor C421. Thereafter the DC control voltage and the VCO frequency will go up.

THF-13

System Module NH2

Output pulses from the phase detector are fed to the loop filter. The function of the integrator is to convert positive and negative pulses to DC voltage. The remaining ripple and AC components are filtered in a three stage lowpass filter.

TX Synthesizer

The transmitter synthesizer generates a frequency modulated transmitter signal to the transmitter section. The injection frequency for transmitter is generated by a digital phase locked loop (PLL). The modulated TX frequency is generated in TX–VCO (G430). The output level of the VCO is 0 dBm +/– 2 dB. After the VCO the TX signal is amplified in the TX buffer V440 before power amplifier module. The gain in the TX buffer is about 8 dB.

If there is a problem with transmitter PA output power, adaptive gain control of TX buffer will increase the injection signal level to transmitter PA. If the PA control voltage rises over 2.3 V, it is assumed that PA is not capable to obtain 750 mW output power anymore. In that case the network of the double operation amplifier N401 will change the V440 biasing point to maximize TX output power.

TX Loop Filter

Output pulses from the phase detector N400 pin 17 are supplied to the loop filter. The integrator, which constitutes R433, C435 and C436, converts positive and negative pulses to DC voltage. The remaining ripple is filtered in a three stage low–pass filter.

Transmitter

The transmitter constitutes a power amplifier module (N611). The modulated RF signal from the TX synthesizer is applied to the 50 ohm input of

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 49

THF-13

System Module NH2

the transmitter module. The power level is controlled by a voltage which is supplied to pin 16 of the PA module. A voltage proportional to the output power is rectified from a coupler strip by the DC–biased Schottky diode V634. This rectified voltage is fed to a differential amplifier which comprises transistors V631 and V632 .

The reference voltage to control the PA module is filtered from the PWM signal TXC to DC voltage by a two stage lowpass filter. The differential amplifier adjusts the collector voltage of the transistor V630 so that the reference voltage and the voltage proportional to the output power are equal. The transmitter is switched on when TXE goes high (logic 1), which enables the transmitter power control circuit by transistor V611. When the transmitter is inactive (TXE low) the RF level from the transmitter is reduced below –57 dBm.

RF Characteristics

PAMS Technical Documentation

Ambient temperature

Line Symbol Minimum Typical /

Nominal

Operating temperature –25 +55 °C

Maximum Unit / Notes

Duplexer

Transmitter Receiver

Frequency 453...457.475 MHz 463...467.475 MHz

Insertion loss max 2.8 dB 6 dB

Ripple at BW max 1.5 dB 1.5 dB

Termination impedance 50 W 50 W

Permissible input power 2.5 W

RX submodule

RX submodule specification is listed below:

N=Normal

E=Extreme

conditions

Intermediate Frequencies 45 MHz, 450 kHz N RF–sensitivity < –113 dBm (SINAD 20 dB) E RF–sensitivity < –110 dBm (SINAD 20 dB) N Adjacent channel selectivity > 67 dB (25 kHz)

Page 50

Parameter Unit / Notes

Frequency range 463...467.475 MHz

Type FM receiver, 2 IFs

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

Unit / NotesParameterN=Normal

E=Extreme

conditions

E Adjacent channel selectivity > 60 dB (25 kHz) N Spurious response rejection > 67 dB N Intermodulation rejection > 67 dB

Blocking :

THF-13

System Module NH2

N RX–band excluding the receiver freq. 

10 MHz N Spurious emissions N 100 kHz ... 1000 MHz < –57 dBm N 1000 MHz ... 4000 MHz < –47 dBm

N / E Audio harmonic distortion < 5 % N / E Noise & hum < –35 dB N / E RSSI dynamic range > 65 dB N / E AGC attenuation 5...10 dB

> –87dB

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 51

THF-13

System Module NH2

Preamplifier

Preamplifier specification is listed below:

PAMS Technical Documentation

Minimum Typical /

Nominal

Supply voltage 2,7 V Frequency band 463 467,475 MHz Current consumption (AGC off) 9 7 mA Current consumption (AGC on) 2 mA Insertion gain (AGC off) 19 22 dB Insertion gain (AGC on) 14 dB Gain flatness ±1 dB Noise figure 1.6 1.8 dB Reverse isolation 30 40 dB IIP3 –5 dBm Input return loss (Z0=50W) –4 dB Output return loss (Z0=50W) –11 dB

Maximum Unit / Notes

RX–filter

RX filter specification is listed below:

Minimum Typical /

Nominal

Center frequency, f Bandwidth (–0,8 dB) ±3 MHz Stopband attenuation

f0 -10 MHz f0 -90 MHz

Insertion loss 3,7 4 dB Passband ripple 0,7 1,0 dB Terminating impedance 50W // 18nH

12 45

464,5 MHz

15 dB 50 dB

Maximum Unit / Notes

1st mixer

1st mixer specification is listed below:

Minimum Typical /

Nominal

Frequency band

RF 463 467.475 MHz

Maximum Unit / Notes

LO 418 422.475 MHz

Page 52

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

THF-13

System Module NH2

Minimum

Nominal

IF 45 MHz Conversion loss 6 8 dB IIP3 12 dBm IIP2 18 dBm LO power level 0 dBm LO–RF isolation 30 dB

Unit / NotesMaximumTypical /

1st IF–filter

1st IF filter specification is listed below:

Minimum Typical / Nomi-

nal

Type Crystal 4–pole Center frequency, f Operating temperature –25 +85 °C 3dB bandwidth ± 7,5 kHz Passband

45,000 MHz

Maximum Unit / Notes

Stopband attenuation fo ± 22 kHz 25 dB adj channel fo -900 kHz ± 10 kHz 80 dB 2nd mirror Spurious response rejec-

tion fo±150 ... ±1000 kHz

Insertion loss 3 dB Passband ripple 1 dB Terminating impedance 600 // 2 W // pF Group delay distortion 30 ms at f0 ± 5 kHz

40 dB

IF–amplifier

2nd IF amplifier specification is listed below:

Minimum Typical /

Nominal

Operating frequency 45 MHz Supply voltage 2.7 V

Maximum Unit / Notes

Input impedance 800 // 1.5 W // pF Output impedance 1000 W Insertion gain 15 18 dB Noise figure 3 dB IIP3 –30 dBm

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 53

THF-13

System Module NH2

2nd IF–filter

2nd IF filter specification is listed below:

PAMS Technical Documentation

Minimum Typical /

Nominal

Center frequency 450 kHz Temperature range +10 (–30) +50 (+70) °C 6 dB bandwidth ± 6.0 (5,5) kHz 26 dB bandwidth ± 9.0 (10,0) kHz 50 dB bandwidth ± 12,5 (13,0) kHz Insertion loss 5,0 (6,0) dB Ripple 3,0 (4,0) dB Stopband attenuation f0 ±13 ... 25 kHz

f0 ±25 ... 100 kHz

Spurious response rejection 0,1...1MHz

Group delay time 100 (120) ms at f0 ±4 kHz Input & output imped-

ance

40 35

20 dB

1,35 1,5 1,65 kW

Maximum Unit / Notes

dB dB

IF–circuit

IF circuit specification is listed below:

Minimum Typical /

Nominal

Supply voltage 2.7 V Current consumption 2,0 mA

2. lo frequency 44.550 MHz RSSI dynamic range 70 dB Case 16 SSOP

Maximum Unit / Notes

TX submodule

TX specification is listed below:

N=Normal

E=Extreme

conditions

N / E Frequency error ± 2.5 kHz

Parameter Unit / Notes

Frequency range 453...457.475 MHz

N / E Output power (after duplex filter) at all

channels

Page 54

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

E=Extreme

conditions

N / E PL 0,1 21.76 ( ± 2 / 3) dBm N / E PL 2,3 31.76 ( ± 2 / 3) dBm

System Module NH2

Unit / NotesParameterN=Normal

THF-13

N / E Carrier switching time from – 40 dB to its

steady state power and frequency within

±1 kHz final frequency

Spurious emissions N 100 kHz ... 1000 MHz (tx operating) < –36 dBm N 100 kHz ... 1000 MHz (standby) < –57 dBm N 1000 MHz ... 4000 MHz (tx operating) < –30 dBm N 1000 MHz ... 4000 MHz (standby) < –47 dBm N Frequency deviation <± 4.7 KHz

N / E Limiting characteristics of modulator ± 3.7 ...4.7 KHz

N Adjacent channel power >67dB

N / E Harmonic distortion <5%

N Residual modulation (CCITT on) < -40 dB N Residual modulation (CCITT off) < -20 dB

< 6 ms

Power amplifier

Power amplifier specification is listed below:

Minimum Typical /

Nominal

Supply voltage 3.2 3.6 4.5 V (5.3V in idle mode)

Current consumption 750 1000 mA (at P Input power 2 10 dBm Output power 31.8 dBm (1.5W) Efficiency 50 % (at operation point) Harmonic level –15 dB (at 2*f Harmonic level –20 dB (at 3*f

Input VSWR 2:1 4:1 Output VSWR

Maximum Unit / Notes

= 1.5W)

out

)

carrier

and hig-

her)

20:1 No degradation or de-

stroy

6:1 No parasitic oscillation

carrier

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 55

THF-13

System Module NH2

Power control

Power control specification is listed below:

PAMS Technical Documentation

Minimum Typical /

Nominal

Supply voltage V Drive current 5.0 mA Power control range 32 dB Control step size 10 15 mW

Maximum Unit / Notes

Coupler lines

Directional coupler specification is listed below:

Minimum Typical /

Nominal

Coupling coefficient 18 25 22 dB VSWR input (Z0=50W) 1:1.2 Isolation 15 dB (with 50 ohm in/out) Insertion loss 0.25 dB (with 50 ohm in/out)

Maximum Unit / Notes

Synthesizer submodule

PLL

PLL specification is listed below:

Minimum Typical /

Nominal

Frequency band 400 1100 MHz Channel separation 25 kHz Supply voltage 2.6 2.75 5.5 V Current consumption 10.0 mA

Maximum Unit / Notes

RX VCO

RX VCO specification is listed below:

Minimum Typical /

Nominal

Frequency band 415.000 425.000 MHz Operating temperature –30 +80 Output level –3 +0 +3 dBm / 50 W

Maximum Unit / Notes

Page 56

 Nokia Mobile Phones Ltd.

Issue 1 08/99

PAMS Technical Documentation

THF-13

System Module NH2

Minimum

Nominal

Harmonic attenuation 12 dB Frequency pulling

due to load variations

due to supply

voltage Supply voltage 2.5 2.7 3.0 V Current consumption 12 mA SSB phase noise –1 18 dBc/Hz (20 kHz offset,

Control Voltage 1.75 4.75 SNR without vibration –44 dB (± 3 kHz dev at

SNR with vibration –34 dB (± 3 kHz dev at

±200 kHz (VSWR = 2.0)

±200 kHz (Vcc ± 0.5 V)

Unit / NotesMaximumTypical /

1Hz BW)

1kHz)

1kHz, at 55 to 150 Hz, for 15 m/s tion)

accelera-

TX VCO

TX VCO specification is listed below:

Minimum Typical /

Nominal

Frequency band 450.000 460.000 MHz Operating temperature –30 +80 Output level –1 +1 +3 dBm / 50 W Harmonic attenuation 12 dB Frequency pulling

due to load

variations

due to supply

voltage Modulation

mod. sensitivity 300 mV

Supply voltage 2.6 2.7 3.0 V Current consumption 12 mA

Maximum Unit / Notes

±200 kHz (VSWR = 2.0)

±200 kHz (Vcc ± 0.5 V)

/ 3 kHz devi-

rms

ation

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 57

THF-13

System Module NH2

PAMS Technical Documentation

Minimum

Nominal

SSB phase noise –1 17 dBc/Hz (20 kHz offset,

SNR without vibration –44 dB (± 3 kHz dev at

SNR with vibration –34 dB (± 3 kHz dev at

Unit / NotesMaximumTypical /

1Hz BW)

1kHz)

1kHz, at 55 to 150 Hz, for 15 m/s tion)

accelera-

Isolation amplifier (TX buffer)

TX buffer specification is listed below:

Minimum Typical /

Nominal

Frequency range 410 490 MHz Input power –1.5 0 +1.5 dBm Output power 4 10 dBm Reverse isolation 30 dB

Maximum Unit / Notes

Supply voltage 2.75 V Current consumption 8 40 mA

VCTCXO

VCTXCO specification is listed below:

Minimum Typical /

Nominal

Frequency 14,85 MHz Control voltage 0.3 3,0 V frequency accuracy ± 2.5 ppm Output level 1 Vpp AC Supply voltage 2.7 V Current consumption 2 mA

Maximum Unit / Notes

Page 58

 Nokia Mobile Phones Ltd.

Issue 1 08/99

THF-13

PAMS Technical Documentation

System Module NH2

Parts list of NH2 Basic (EDMS Issue 2.0) Code: 0201469

ITEM CODE DESCRIPTION VALUE TYPE

R102 1422881 Chip resistor 0.22 5 % 1 W 1218 R103 1430145 Chip resistor 100 k 1 % 0.063 W 0402 R104 1430842 Chip resistor 680 k 1 % 0.063 W 0402 R105 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R106 1430842 Chip resistor 680 k 1 % 0.063 W 0402 R107 1430145 Chip resistor 100 k 1 % 0.063 W 0402 R111 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R113 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402 R121 1430792 Chip resistor 33 k 5 % 0.063 W 0402 R122 1430792 Chip resistor 33 k 5 % 0.063 W 0402 R123 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R130 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R131 1430798 Chip resistor 56 k 5 % 0.063 W 0402 R132 1430792 Chip resistor 33 k 5 % 0.063 W 0402 R133 1430690 Chip jumper 0402 R140 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R141 1430788 Chip resistor 22 k 5 % 0.063 W 0402 R142 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R145 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R148 1430766 Chip resistor 3.9 k 5 % 0.063 W 0402 R149 1430780 Chip resistor 12 k 5 % 0.063 W 0402 R150 1430784 Chip resistor 15 k 5 % 0.063 W 0402 R151 1430776 Chip resistor 8.2 k 5 % 0.063 W 0402 R152 1430776 Chip resistor 8.2 k 5 % 0.063 W 0402 R153 1430784 Chip resistor 15 k 5 % 0.063 W 0402 R154 1430784 Chip resistor 15 k 5 % 0.063 W 0402 R155 1430784 Chip resistor 15 k 5 % 0.063 W 0402 R156 1430784 Chip resistor 15 k 5 % 0.063 W 0402 R157 1430784 Chip resistor 15 k 5 % 0.063 W 0402 R158 1430784 Chip resistor 15 k 5 % 0.063 W 0402 R160 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R161 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R162 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R163 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R164 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R165 1430776 Chip resistor 8.2 k 5 % 0.063 W 0402 R167 1430776 Chip resistor 8.2 k 5 % 0.063 W 0402 R168 1430776 Chip resistor 8.2 k 5 % 0.063 W 0402 R169 1430776 Chip resistor 8.2 k 5 % 0.063 W 0402 R170 1430776 Chip resistor 8.2 k 5 % 0.063 W 0402 R171 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R172 1430700 Chip resistor 10 5 % 0.063 W 0402 R173 1430812 Chip resistor 220 k 5 % 0.063 W 0402 R174 1430812 Chip resistor 220 k 5 % 0.063 W 0402

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 59

THF-13

System Module NH2

R175 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R176 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R179 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R180 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R182 1825005 Chip varistor vwm14v vc30v 0805 0805 R183 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R184 1430706 Chip resistor 15 5 % 0.063 W 0402 R185 1430706 Chip resistor 15 5 % 0.063 W 0402 R186 1430690 Chip jumper 0402 R187 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R189 1825005 Chip varistor vwm14v vc30v 0805 0805 R195 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R196 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R197 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R198 1430734 Chip resistor 220 5 % 0.063 W 0402 R202 1430145 Chip resistor 100 k 1 % 0.063 W 0402 R203 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R204 1430792 Chip resistor 33 k 5 % 0.063 W 0402 R205 1430792 Chip resistor 33 k 5 % 0.063 W 0402 R206 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R207 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R208 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R210 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R215 1430187 Chip resistor 47 k 1 % 0.063 W 0402 R216 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R217 1430792 Chip resistor 33 k 5 % 0.063 W 0402 R230 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R231 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R241 1430792 Chip resistor 33 k 5 % 0.063 W 0402 R242 1430792 Chip resistor 33 k 5 % 0.063 W 0402 R243 1430792 Chip resistor 33 k 5 % 0.063 W 0402 R301 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402 R310 1430714 Chip resistor 33 5 % 0.063 W 0402 R311 1430724 Chip resistor 82 5 % 0.063 W 0402 R312 1430720 Chip resistor 56 5 % 0.063 W 0402 R313 1430740 Chip resistor 330 5 % 0.063 W 0402 R314 1430690 Chip jumper 0402 R320 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R323 1430746 Chip resistor 560 5 % 0.063 W 0402 R324 1430808 Chip resistor 150 k 5 % 0.063 W 0402 R325 1430760 Chip resistor 1.8 k 5 % 0.063 W 0402 R340 1430690 Chip jumper 0402 R341 1430734 Chip resistor 220 5 % 0.063 W 0402 R351 1430728 Chip resistor 120 5 % 0.063 W 0402 R352 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R353 1430772 Chip resistor 5.6 k 5 % 0.063 W 0402 R354 1430760 Chip resistor 1.8 k 5 % 0.063 W 0402 R355 1430740 Chip resistor 330 5 % 0.063 W 0402

PAMS Technical Documentation

Page 60

 Nokia Mobile Phones Ltd.

Issue 1 08/99

THF-13

PAMS Technical Documentation

R356 1430690 Chip jumper 0402 R360 1430784 Chip resistor 15 k 5 % 0.063 W 0402 R361 1430788 Chip resistor 22 k 5 % 0.063 W 0402 R362 1430710 Chip resistor 22 5 % 0.063 W 0402 R363 1430746 Chip resistor 560 5 % 0.063 W 0402 R373 1430714 Chip resistor 33 5 % 0.063 W 0402 R374 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R381 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R401 1430710 Chip resistor 22 5 % 0.063 W 0402 R402 1430710 Chip resistor 22 5 % 0.063 W 0402 R403 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R404 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R405 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R407 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R409 1430690 Chip jumper 0402 R410 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R414 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R420 1430788 Chip resistor 22 k 5 % 0.063 W 0402 R421 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402 R422 1430792 Chip resistor 33 k 5 % 0.063 W 0402 R423 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R424 1430734 Chip resistor 220 5 % 0.063 W 0402 R425 1430734 Chip resistor 220 5 % 0.063 W 0402 R430 1430700 Chip resistor 10 5 % 0.063 W 0402 R431 1430690 Chip jumper 0402 R432 1430784 Chip resistor 15 k 5 % 0.063 W 0402 R433 1430788 Chip resistor 22 k 5 % 0.063 W 0402 R434 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402 R435 1430792 Chip resistor 33 k 5 % 0.063 W 0402 R436 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R440 1430734 Chip resistor 220 5 % 0.063 W 0402 R441 1430734 Chip resistor 220 5 % 0.063 W 0402 R442 1430710 Chip resistor 22 5 % 0.063 W 0402 R443 1430722 Chip resistor 68 5 % 0.063 W 0402 R444 1430710 Chip resistor 22 5 % 0.063 W 0402 R445 1430740 Chip resistor 330 5 % 0.063 W 0402 R446 1430700 Chip resistor 10 5 % 0.063 W 0402 R447 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R448 1430706 Chip resistor 15 5 % 0.063 W 0402 R449 1430744 Chip resistor 470 5 % 0.063 W 0402 R450 1430744 Chip resistor 470 5 % 0.063 W 0402 R480 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R482 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R483 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R484 1430800 Chip resistor 68 k 5 % 0.063 W 0402 R485 1430780 Chip resistor 12 k 5 % 0.063 W 0402 R486 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402 R487 1430778 Chip resistor 10 k 5 % 0.063 W 0402

System Module NH2

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 61

THF-13

System Module NH2

R488 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R489 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402 R490 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R491 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402 R613 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R615 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R622 1430712 Chip resistor 27 5 % 0.063 W 0402 R631 1430788 Chip resistor 22 k 5 % 0.063 W 0402 R632 1430788 Chip resistor 22 k 5 % 0.063 W 0402 R633 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R634 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R635 1430790 Chip resistor 27 k 5 % 0.063 W 0402 R637 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R638 1430784 Chip resistor 15 k 5 % 0.063 W 0402 R639 1430784 Chip resistor 15 k 5 % 0.063 W 0402 R640 1430718 Chip resistor 47 5 % 0.063 W 0402 R641 1430718 Chip resistor 47 5 % 0.063 W 0402 R642 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R690 1430690 Chip jumper 0402 R701 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R712 1430830 Chip resistor 1.0 M 5 % 0.063 W 0402 R713 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R714 1430812 Chip resistor 220 k 5 % 0.063 W 0402 R731 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R732 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R734 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R735 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R744 1430690 Chip jumper 0402 R745 1430706 Chip resistor 15 5 % 0.063 W 0402 R746 1430706 Chip resistor 15 5 % 0.063 W 0402 R782 1430718 Chip resistor 47 5 % 0.063 W 0402 R798 1430788 Chip resistor 22 k 5 % 0.063 W 0402 R800 1800673 NTC resistor 15 k 10 % 0.12 W 0805 C100 2320131 Ceramic cap. 33 n 10 % 16 V 0603 C101 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C102 2604209 Tantalum cap. 1.0 u 20 % 16 V

3.2x1.6x1.6 C103 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C105 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C110 2611668 Tantalum cap. 4.7 u 20 % 10 V

3.2x1.6x1.6 C111 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C112 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C113 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C114 2320546 Ceramic cap. 27 p 5 % 50 V 0402 C115 2320546 Ceramic cap. 27 p 5 % 50 V 0402 C116 2610100 Tantalum cap. 1 u 20 % 10 V

2.0x1.3x1.2

PAMS Technical Documentation

Page 62

 Nokia Mobile Phones Ltd.

Issue 1 08/99

THF-13

PAMS Technical Documentation

C117 2320546 Ceramic cap. 27 p 5 % 50 V 0402 C118 2320546 Ceramic cap. 27 p 5 % 50 V 0402 C120 2610100 Tantalum cap. 1 u 20 % 10 V

2.0x1.3x1.2 C121 2610100 Tantalum cap. 1 u 20 % 10 V

2.0x1.3x1.2 C122 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C123 2610100 Tantalum cap. 1 u 20 % 10 V

2.0x1.3x1.2 C140 2320131 Ceramic cap. 33 n 10 % 16 V 0603 C141 2320131 Ceramic cap. 33 n 10 % 16 V 0603 C145 2312211 Ceramic cap. 3.3 u 10 % 0805 C146 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C160 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C167 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C168 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C169 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C170 2320131 Ceramic cap. 33 n 10 % 16 V 0603 C171 2320131 Ceramic cap. 33 n 10 % 16 V 0603 C172 2604127 Tantalum cap. 1.0 u 20 % 35 V

3.5x2.8x1.9 C180 2320516 Ceramic cap. 1.5 p 0.25 % 50 V 0402 C190 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C191 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C192 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C193 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C194 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C195 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C196 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C197 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C198 2320552 Ceramic cap. 47 p 5 % 50 V 0402 C201 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C202 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C203 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C205 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C206 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C207 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C208 2320546 Ceramic cap. 27 p 5 % 50 V 0402 C209 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C228 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C230 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C231 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C232 2610100 Tantalum cap. 1 u 20 % 10 V

2.0x1.3x1.2 C233 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805 C241 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C242 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C243 2320779 Ceramic cap. 100 n 10 % 16 V 0603

System Module NH2

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 63

THF-13

System Module NH2

C251 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C302 2320564 Ceramic cap. 150 p 5 % 50 V 0402 C303 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C310 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C311 2312293 Ceramic cap. Y5 V 1206 C312 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C314 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C321 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C330 2320548 Ceramic cap. 33 p 5 % 50 V 0402 C333 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402 C340 2320604 Ceramic cap. 18 p 5 % 50 V 0402 C341 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402 C342 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402 C351 2320536 Ceramic cap. 10 p 5 % 50 V 0402 C352 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C353 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402 C354 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C360 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C361 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C362 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C363 2320546 Ceramic cap. 27 p 5 % 50 V 0402 C370 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C371 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C372 2320546 Ceramic cap. 27 p 5 % 50 V 0402 C373 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C374 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C375 2312296 Ceramic cap. Y5 V 1210 C376 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C381 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C382 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C401 2312293 Ceramic cap. Y5 V 1206 C402 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C403 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C404 2312293 Ceramic cap. Y5 V 1206 C405 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C406 2610003 Tantalum cap. 10 u 20 % 10 V

3.2x1.6x1.6 C410 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805 C411 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C413 2320536 Ceramic cap. 10 p 5 % 50 V 0402 C414 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C420 2320596 Ceramic cap. 3.3 n 5 % 50 V 0402 C421 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C422 2320618 Ceramic cap. 4.7 n 5 % 25 V 0402 C423 2320596 Ceramic cap. 3.3 n 5 % 50 V 0402 C424 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C425 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C426 2320131 Ceramic cap. 33 n 10 % 16 V 0603

PAMS Technical Documentation

Page 64

 Nokia Mobile Phones Ltd.

Issue 1 08/99

THF-13

PAMS Technical Documentation

C427 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C428 2611668 Tantalum cap. 4.7 u 20 % 10 V

3.2x1.6x1.6 C430 2312293 Ceramic cap. Y5 V 1206 C431 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C432 2611668 Tantalum cap. 4.7 u 20 % 10 V

3.2x1.6x1.6 C433 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C434 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C435 2320596 Ceramic cap. 3.3 n 5 % 50 V 0402 C436 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C437 2320618 Ceramic cap. 4.7 n 5 % 25 V 0402 C438 2320596 Ceramic cap. 3.3 n 5 % 50 V 0402 C439 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C440 2320602 Ceramic cap. 4.7 p 0.25 % 50 V 0402 C441 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C442 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C443 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C444 2320602 Ceramic cap. 4.7 p 0.25 % 50 V 0402 C445 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C446 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C482 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C483 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805 C623 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C628 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805 C631 2320781 Ceramic cap. 47 n 20 % 16 V 0603 C632 2320781 Ceramic cap. 47 n 20 % 16 V 0603 C634 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C637 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C638 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C639 2320618 Ceramic cap. 4.7 n 5 % 25 V 0402 C646 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C651 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C652 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C653 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C654 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C655 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805 C656 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C657 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C658 2312293 Ceramic cap. Y5 V 1206 C659 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C660 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C662 2320548 Ceramic cap. 33 p 5 % 50 V 0402 C663 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C664 2320550 Ceramic cap. 39 p 5 % 50 V 0402 C666 2320602 Ceramic cap. 4.7 p 0.25 % 50 V 0402 C690 2320536 Ceramic cap. 10 p 5 % 50 V 0402 C700 2320618 Ceramic cap. 4.7 n 5 % 25 V 0402

System Module NH2

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 65

THF-13

System Module NH2

C701 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C702 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C703 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C704 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C705 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C706 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C712 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C713 2320131 Ceramic cap. 33 n 10 % 16 V 0603 C714 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C715 2312296 Ceramic cap. Y5 V 1210 C716 2320781 Ceramic cap. 47 n 20 % 16 V 0603 C717 2320131 Ceramic cap. 33 n 10 % 16 V 0603 C720 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C732 2320620 Ceramic cap. 10 n 5 % 16 V 0402 C733 2320131 Ceramic cap. 33 n 10 % 16 V 0603 C734 2320131 Ceramic cap. 33 n 10 % 16 V 0603 C741 2320546 Ceramic cap. 27 p 5 % 50 V 0402 C767 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C768 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C781 2312296 Ceramic cap. Y5 V 1210 C783 2320131 Ceramic cap. 33 n 10 % 16 V 0603 L102 3203701 Ferrite bead 33r/100mhz 0805 0805 L150 3203701 Ferrite bead 33r/100mhz 0805 0805 L151 3203701 Ferrite bead 33r/100mhz 0805 0805 L153 3645027 Chip coil 470 n 10 % Q=25/25 MHz 0805 L154 3645027 Chip coil 470 n 10 % Q=25/25 MHz 0805 L301 3643013 Chip coil 27 n 5 % Q=40/250 MHz 0805 L310 3643003 Chip coil 12 n 5 % Q=30/250 MHz 0805 L311 3643013 Chip coil 27 n 5 % Q=40/250 MHz 0805 L331 3641572 Chip coil 22 n 5 % Q=45/250 MHz 0805 L340 3645027 Chip coil 470 n 10 % Q=25/25 MHz 0805 L361 3641560 Chip coil 220 n 10 % Q=30/100 MHz 0805 L371 3645027 Chip coil 470 n 10 % Q=25/25 MHz 0805 L440 3641548 Chip coil 100 n 10 % Q=40/150 MHz 0805 L442 3641544 Chip coil 68 n 10 % Q=40/200 MHz 0805 L621 3641548 Chip coil 100 n 10 % Q=40/150 MHz 0805

PAMS Technical Documentation

Page 66

 Nokia Mobile Phones Ltd.

Issue 1 08/99

THF-13

PAMS Technical Documentation

L623 3641548 Chip coil 100 n 10 % Q=40/150 MHz 0805 L651 3641548 Chip coil 100 n 10 % Q=40/150 MHz 0805 L652 3645179 Chip coil 2 n Q=8/100M 0603 L690 3645009 Chip coil 33 n 5 % Q=12/100 MHz 0603 B001 5140087 Buzzer 85db 2600hz 3.6v 10x10x3. 10x10x3.5 B100 4510159 Crystal 32.768 k +–20PPM B701 4510155 Crystal 14.7456 M +–50PPM G100 4700057 Cell assy. polyacene 0.05mah 3.3v 3.3V G410 4510171 VCTCXO 14.85 M +–2PPM 3.0V G420 4350169 Vco 416–425mhz 2.8v 12ma nmt450 NMT450 G430 4350167 Vco 450–460mhz 2.8v 15ma nmt450 NMT450 F102 5119011 SM, fuse f2a 63v 120 1206 F150 5119011 SM, fuse f2a 63v 120 1206 Z100 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603 Z101 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603 Z102 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603 Z130 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603 Z131 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603 Z330 4510135 Saw filter 464.5+–3 M /4DB 5.2x5.2 Z340 4510085 XTAL filter 45 M +–7.5KHZ 4POLE Z370 4550063 Cer. filt 450+–6khz 7.5x11.5 7.5x11.5 Z640 4512089 Dupl 453–457.5/463–467.5mhz 35x25 35x25 V028 4100278 Diode x 2 BAV70 70 V 200 mA COMCAT.SOT23 V101 4100189 Schottky diode BAS70–05 70 V 15 mA SOT23 V113 4119902 Diode x 4 IMP11 80 V 0.3 A IMD V114 4119902 Diode x 4 IMP11 80 V 0.3 A IMD V115 4100189 Schottky diode BAS70–05 70 V 15 mA SOT23 V120 4210100 Transistor BC848W npn 30 V SOT323 V121 4210100 Transistor BC848W npn 30 V SOT323 V122 4210100 Transistor BC848W npn 30 V SOT323 V140 4219922 Transistor x 2 UM6 V150 4113651 Trans. supr. QUAD 6 V SOT23–5 V151 4113651 Trans. supr. QUAD 6 V SOT23–5 V170 4210102 Transistor BC858W pnp 30 V 100 mA 200MWSOT323 V171 4210102 Transistor BC858W pnp 30 V 100 mA 200MWSOT323 V172 4210100 Transistor BC848W npn 30 V SOT323 V310 4210074 Transistor BFP420 npn 4. V SOT343 V320 4210102 Transistor BC858W pnp 30 V 100 mA 200MWSOT323 V321 4219922 Transistor x 2 UM6 V330 4100567 Sch. diode x 2 BAS70–04 70V15 mA SERSOT23

System Module NH2

Issue 1 08/99

 Nokia Mobile Phones Ltd.

Page 67

THF-13

System Module NH2

V350 4210066 Transistor BFR93AW npn 12 V 35 mA SOT323 V360 4210066 Transistor BFR93AW npn 12 V 35 mA SOT323 V440 4210091 Transistor BFG540W/X npn 15 V SOT343 V611 4210100 Transistor BC848W npn 30 V SOT323 V630 4210102 Transistor BC858W pnp 30 V 100 mA 200MWSOT323 V631 4210100 Transistor BC848W npn 30 V SOT323 V632 4210100 Transistor BC848W npn 30 V SOT323 V634 4100567 Sch. diode x 2 BAS70–04 70V15 mA SERSOT23 V635 4116536 Zener diode BZX84 5 % 2.4 V 0.3 W SOT23 V637 4116536 Zener diode BZX84 5 % 2.4 V 0.3 W SOT23 V731 4210100 Transistor BC848W npn 30 V SOT323 V732 4210100 Transistor BC848W npn 30 V SOT323 D201 4370501 IC, MCU TQFP120 D211 4340261 IC, flash mem. TSO48 D221 4340273 IC, SRAM STSOP32 D241 4370405 IC, MCU 8S2 D251 4340357 IC, EEPROM SO8 N100 4370165 Chaps charger control SO16 N101 4370471 Power asic for etacs/nmt450 N102 4340623 Pcf8563 clock/calendar 1–5.5v SO8 N103 4340059 IC, lp opamp+3/15v r&r LMC7101 SSOP5 N123 4340663 IC, regulator LP2985 3.3 V 150 mA SOT23–5 N244 4340663 IC, regulator LP2985 3.3 V 150 mA SOT23–5 N370 4349694 IC, if amp+fm detector TA31136 SSO16 N400 4340393 IC, 2xsynth 1.1ghz UMA1015AM SSOP20 N401 4340403 IC, 2xop amp 2.7–3v sLMC6572AIM SO8 N611 4340629 Rf2117 pw amp 450mhz SO16S N701 4370381 IC, nmt audio/signalling MASI TQFP64 S150 5219005 IC, SWsp–no 30vdc 50ma SW TACT SMD S151 5219005 IC, SWsp–no 30vdc 50ma SW TACT SMD S152 5219005 IC, SWsp–no 30vdc 50ma SW TACT SMD X003 5469031 SM, conn chp2502–0101 1x2 m P1.25 X099 5460021 SM, conn 2x14m spring p1.0 pcb/p PCB/PCB X104 5469069 SM, batt conn 2pol spr p3.5 100v 100V2A X105 5469069 SM, batt conn 2pol spr p3.5 100v 100V2A X131 5469061 SM, system conn 6af+3dc+mic+jack X600 5429007 SM, coax conn m sw 50r 0.4–2ghz X630 9510482 Antenna clip dmd04336 thf–12

9854344 PC board NH1 128.8x41.0x1.0 m4 4/pa

PAMS Technical Documentation

Page 68

 Nokia Mobile Phones Ltd.

Issue 1 08/99

Nokia Thf13, 640 System Module 02

Specifications and Main Features

Frequently Asked Questions

User Manual

AMENDMENT RECORD SHEET

Introduction

System Module NH2

Baseband Sub-module

AUDIO BLOCK

Receive (RX) Audio Signal Path

RF Module

Connections

TX Synthesizer

RF Characteristics

Parts list of NH2 Basic (EDMS Issue 2.0) Code: 0201469