6, 15, 24Vss
26PA5SLIC_DETI
27PA6NC
28PA7NC
29P67NC
30P66NC
31P65NC
32_IRQ0XINT, interrupt signal from MASII
33Vccto VL
34–37,
39–46,
48–51
38, 47VssGND
52Vccto VL
A0–A20FLASH, MASI and RAM addresses
(A20, pin 25 not connected)
D0–D15Data busData
Address
53P30/TxD0MSBUSTX, serial data to M2BUSO
54P31/TxD1TXBUFFO
55P32/RxD0MBUSRX, serial data from M2BUSI
56P33/RxD1FLASH_PROG, flash voltage control and PSA
watchdog disable
57P34/SCK0IMMO_SET, Immobilizer set signalO
58P34/SCK1AGCI/O
59VssGND
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60P60/CS4/_DREQ0NCI
61P61/CS5/TEND0NCI
62P62/_DREQ1ECLK, serial clock (EEPROM)I
PAMS Technical Documentation
Pin typeDescriptionSymbolPin number
63P63/_TEND1SISDATA,
(SIS serial data)
64P27SLE, synthesizer enableO
65P26SLIC_CLK2 SLIC gate clock for SMPSO
66P25MBUSRX, timeout timer start signal from M2BUSI
67P24SCLK serial clock for synthesizerO
68P23SDAT, synthesizer dataO
69P22TXEI/O
70P21SIS RESETO
71P20RXEO
72WDTOVFNC
73_RESXRES reset for MCU, FLASH, MASI from PSAI
74NMI1I
75STDBY1I
76Vccto VL
77XTALNC
78EXTALCLKMCU from MASII
79VssGND
AT90S2343 is a SIS (subscriber identification) circuit connected to the
controller over serial bus IIC.
Pin no.SymbolDescription
1_RESETReset input
2XTAL1Clock input from MASI
4GNDGND
5MOSIIIC bus data
7SCL/T0IIC bus clock
8VccVSIS
EEPROM
There is one 16k EEPROMs in phone. EEPROM is a nonvolatile memory
into which is stored the tuning data for the phone.
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Pin no.PinDescription
4GNDGND
5SDAIIC bus data
6SCLIIC bus clock
8VccVL
PAMS Technical Documentation
Flash memory and Flash programming
Flash memory size is 512kx16 (8MB). The Flash is a nonvolatile memory
for the program code.
Flash memory has a pre–programmed boot program. This program controls itself when the final program is stored in the memory via the FBUS
and the MBUS.
During programming only the system connector is used and the TFF–3 is
powered via the flash loading adapter (FLA–5).
RAM
The MCU has no internal memories, instead there is a SRAM circuit connected to the parallel data bus and the address bus. The size of the
SRAM is 64kB.
Immobilizer
The immobilizer uses two I/O pins of the MCU. The Output pin is used for
writing to the immobilizer and the input pin is used to read the state of the
flip–flop.
When the immobilizer is activated, the state of the flip–flop is set by the
switch and by the software via MCU output pin. After that, in the run–
time, the state of the flip–flop is read every 4 seconds. As long as the terminal stays in its original location, the state is ”1”.
When the terminal is moved, the immobilizer switch opens and causes a
state transition. After that the state of the flip–flop is found to be ”0” and
the software sets the terminal to ”terminal moved” –state. In that state
the message ”terminal moved” can be seen in the service PC software.
The operating voltage of the immobilizer (VSLIM) is obtained from the
voltage supply (VS). There is also a 0.5mAh lithium battery for backup
purpose, which is used as power supply in the situations when the terminal is not powered. This means, that the terminal can not be moved even
if it has no power. In this case the flip–flop will change its state when the
switch is opened. When the terminal is powered again the movement will
be detected.
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PWRU
The main function of the PWRU is to feed suitable voltages in every
block. It consists of Input voltage connectors, protection circuits, separate regulators and the PSA ASIC. The PSA circuit has also another
function, the MBUS handling and watchdog.
The Power distribution diagram is below.
TFF-3
System Module JM1
PSA
VL (2.8V)
40mA
VA (2.8V)
100mA
VB
Input voltage
protection
Regulator
5V /0.5A
Regulator
3.3V 150mA
Regulator
3.3V 150mA
Regulator
8V/0.5A
to power amplifier and SLIC
The input voltage is protected against accidental interference and fault
actions. The RF –power amplifier and SLIC functions use this unregulated voltage.
Supply voltages for PSA, flash programming, SIS MCU and RF transmitter are fed from separate regulators.
VTX (2.8V)
60mA
VRX (2.8V)
50mA
VS
VSIS
VPROG
VPC
VB
10.6–14.5V
max. 2.8A
Input supply voltage
Input voltage is protected against overcurrent, overvoltage and reverse
voltage.
Also the input voltage is protected against overvoltage and reverse voltage. RF –power amplifier and SLIC functions use this unregulated voltage.
Overcurrent:
There is slow type fuse, breakdown value 5A
Overvoltage and reverse voltage:
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System Module JM1
There is transient suppressor diode which work as fast Zener voltage
over 16V nom. (max. 20V). Also it work like diode in forward direction.
Also input voltage is filtered against interference from external power supply unit.
PSA
The PSA is a multi function Power Supply and charging control circuit for
Analog handportable phones. It has two separate power supplies for
baseband (VL,VA) and two externally controllable power supplies for RF
(VRX, VTX). The main functions are voltage regulators, power on/off and
charge control and reset logic (including watchdog), supply voltage and
charger detection functions and buffer for the M2BUS.
Main features of PSA:
– Voltage outputs are isolated from other regulators and from each other
– Buffer for the M2BUS
PAMS Technical Documentation
– Power on/off and reset logic
– Power off logic can be used as a watchdog
– Supply voltage monitor and automatic reset/power–off
– Battery charger detection
– Automatic on–chip current limiting
– On–chip thermal shutdown
– Surface mounted package SSOP28
PSA pinout
Control pins:
SignalPin
number
PWRONX22INPoWeR ON control input (pulled down )
VRX_ENA2INVRX regulator ENAble
VTX_ENA27INVTX regulator ENAble
WD_DISX24INWatchDog DISable (internal pull up)
PWROFFX23INWatchdog reset from MCU
PURX16OUTPower Up Reset signal
TypeDescription
Page 12
Input pins:
SignalPin
number
VBAT13Battery voltage for VRX regulator
VBAT211Battery voltage for VL regulator, battery voltage monitor-
ing and internal logic
VBAT318Battery voltage for VA regulator and internal analog func-
tions
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TFF-3
System Module JM1
Signal
number
VBAT426Battery voltage for VTX regulator
GND11Ground for VRX regulator
GND26Ground for internal reference voltage
GND312Ground for VL regulator and internal logic
GND419Ground for VA regulator and internal analog functions
GND528Ground for VTX regulator
TEST5Test specific pin (internal pull down)
M2BUSIN14M2BUS data input
VCHAR9Divided CHARger input Voltage
DescriptionPin
Output pins:
SignalPin
number
VA17Output Voltage for Analog circuitry (2.8V@100mA)
VL13Output Voltage for Logic circuitry (2.8V@40mA)
VRX4Output Voltage for RF or Analog circuitry
(2.8V@50mA)
VTX25Output Voltage for RF or Analog circuitry
(2.8V@60mA)
VBATSW20SWitched internally divided VBAT voltage
VCHARSW8SWitched VCHAR voltage
COSC10Connection for an external timing Capacitor defining
watchdog elapse time
CREF7Connection for an external Capacitor of the internal REF-
erence voltage
M2BUSOUT15M2BUS data out (open drain)
PWRONBUFF21inverted PWRONX state
Description
PWRONX and WD_DISX inputs have internal pull–up resistors.
M2BUSIN, VRX_ENA, VTX_ENA, TEST and PWROFFX inputs have in-
ternal pull–down resistors.
Functional descriptions
PSA
The linear regulators are high performance regulators. Regulators have
internal current limiting. All the regulators have low quiescent currents
thus extending the battery life.
VA and VL are intended for baseband circuits, VRX and VTX for RF circuitry.
Voltage monitor
This function is used to monitor VBAT voltage level. The threshold level
is set by internal resistor divider.
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System Module JM1
The circuit monitors the voltage at the VBAT input and forces the circuit to
Reset if the voltage level is below allowed limit voltage, VBATcoff–. A
hysteresis is included to prevent oscillation between different states.
Thermal protection
Thermal shutdown protects PSA from overheating. Thermal shutdown includes hysteresis in order to prevent oscillation during the thermal protection.
Power supply voltage detection
Thermal shutdown protects PSA from overheating. Thermal shutdown includes hysteresis in order to prevent oscillation during the thermal protection.
M2BUS buffer
M2BUS is a serial bus between mobile and accessories.
M2BUS baud rate is 9600 bps.
PAMS Technical Documentation
The buffer translates the logical input signal to open–drain output.
Rgw M2BUS buffer thruth table is below.
Separate regulators
Separate supply voltages:
– Regulator 5V is for PSA and some RF purposes.
– Regulator 8V is used for RF TX buffers
– Regulator 3.3V is used for flash programming
– Regulator 3.3V is used for SIS MCU
InputOutput
LOWLOW
HIGHZ
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AUDIO
The Audio block includes the MASI ASIC, the DTMF circuitry and the
SYSTEM connector.
MASI ASIC
MASI is a single chip audio/signalling processor in a 64 TQFP package
for the NMT450 system.
Main features
– Low power consumption modes
– 8 bit parallel interface with pull ups
– FM demodulator
TFF-3
System Module JM1
FFSK modem features
– Full duplex 1200 baud signalling
– FSK indicator and level detector
– FII filter and gain control
– DMS facility
Audio features
– Low noise microphone amplifier
– Input for a handset microphone or an accessory
– Microphone sensitivity compensation +24/–7 dB range (5 bits)
– Compander
– RX and TX filters
– Tx hard limiter
– Tx AGC
– Transmitter compensation amplifier with +1.875/–1.875 dB range (4
bits)
– Compensation amplifier for different RX deviations with +7.5/0 dB
range (4 bits)
– Volume control amplifier with –20/+17.5 range (4 bits)
– Earphone amplifier with drive capability for ceramic earpiece
– Buffered output for a handset or an accessory
– Mute switches
– Speech scrambler and descrambler
Other features
– Dual and single tone multifrequency generator
– IF counter
– 8 bit general purpose DAC
– Programmable output clocks with clock stop for MCU, LCD and SIS
– Two external interrupt sources
– Programmable timer
– Summing stage for voice/data, signalling and fii
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PAMS Technical Documentation
MASI Pinout
Pin noSymbolPin typeNotes
1VDD1PWR+2.7 ... 3.5 V Supply voltage for digital part
2XCSDIN/pdChip select signal, active state LOW, pull–down > 50 kW
3A4DIN/pu5–bit address bus, MSB, pull–up > 50 kW
4A3DIN/pu5–bit address bus, pull–up > 50 kW
5A2DIN/pu5–bit address bus, pull–up > 50 kW
6A1DIN/pu5–bit address bus, pull–up > 50 kW
7A0DIN/pu5–bit address bus, LSB, pull–up > 50 kW
8D7DIO8–bit bidirectional data bus MSB
9D6DIO8–bit bidirectional data bus
10D5DIO8–bit bidirectional data bus
11D4DIO8–bit bidirectional data bus
12D3DIO8–bit bidirectional data bus
13D2DIO8–bit bidirectional data bus
14D1DIO8–bit bidirectional data bus
15D0DIO8–bit bidirectional data bus LSB
16NMIDOUTNon maskable Interrupt request
17VSS1PWR0 V Supply voltage, ground for digital part
18XCLRDINHW reset input, active state LOW
19TMODEDIN/pdTest mode selection, pull–down > 50 kW
20TSELDIN/pdScan test selection, pull–down > 50 kW
21XINTDOUTInterrupt request to MCU, active state LOW
22EXTINT1DINExternal interrupt request, falling edge active (note: this pin
is test scan select when TMODE is high)
23EXTINT2DINExternal interrupt request, falling edge active
24VDD2PWR+2.7 ... 3.5 V Supply voltage for digital in Analog part
25IFAINIF input
26DAFAINAudio input
27FILOAOUTRxfilter output
28EXPIAINExpander/Descrambler input
29EXPOAOUTExpander/Descrambler output
30VOLIAINVolume control amplifier input
31VSA1PWR0 V Supply voltage, ground for RX Analog
(including EARAMP & EXTEAR)
32EXTEARAOUTBuffered output for handset or an accessory
33EARPAOUTEarphone driver output, positive
34VDA1PWR+ 2.7 ... 3.5 V Supply voltage for RX Analog
(including EARAMP & EXTEAR)
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NotesPin typeSymbolPin no
35EARNAOUTEarphone driver output, negative
36DACOAOUTDA converter output
37CALLCNTAINVoltage sensor input for battery change during call
38REFAOUTInternal analog signal ground, stabilization capacitor
39ATOUTAOUTAnalog test circuit output
40MICAINMicrophone amplifier input,
41BIMICAOUTMicrophone bias output
42CMICAINMicrophone bias current stabilizing capacitor
43EXTMICAINAudio input for a handset or an accessory
44TXPBOAOUTTransmit bandpass filter (scrambler) output
45COMIAINCompressor input
46MODAOUTtransmit path output
47ATSTAOUTAnalog test output
System Module JM1
TFF-3
48VDA2PWR+ 2.7 ... 3.5 V Supply voltage for TX Analog & NVSGEN
49NSVAOUTNegative supply voltage, –7V output
50NSV2AOUTnegative supply voltage –4.66V, for external capacitor
51NSV1AOUTnegative supply voltage –2.33V, for external capacitor
52NCPPAOUTNegative supply charge pump (external) capacitor positive
53NCPNAOUTNegative supply charge pump (external) capacitor negative
54VSA2PWR0 V Supply voltage, ground for TX Analog & NVSGEN
55TOUTDOUTTest scan data output
56CLKINCIN14.7456 MHz crystal oscillator input or input for the external
clock
57CLKOUTCOUT14.7456 MHz crystal oscillator output
58VSS2PWR0 V Supply voltage,
ground for digital in Analog part & Buzzer
59BUZZAOUTBuzzer output, open collector
60CLKLCDDOUTClock signal for LCD, 230.4 kHz, 57.6 kHz or 14.4 kHz
61CLKSISDOUTClock signal for SIS processor, 3.6864MHz or 7.3728MHz
62CLKMCUDOUTClock signal for MCU, 3.6864 MHz, 7.3728 MHz or 14.7456
MHz
63XWRDIN/puWrite control signal, active state LOW, pull–up > 50 kW
64XRDDIN/pdRead control signal, active state LOW, pull–down > 50 kW
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PAMS Technical Documentation
SLIC block
The TFF–3 line adapter hardware is implemented using the STLC3065
SLIC custom–designed for wireless applications. The pins of the
STLC3065 are listed below.
Pin noSymbolPin typeNotes
1D0IControl interface,input bit 0
2D1IControl interface,input bit 1
3D2IControl interface,input bit 2
4P1IControl interface, port selection bit
5P2IControl interface, port selection bit
6_DET1OLogic interface output of the line port 1 detector, open drain
7_DET2OLogic interface output of the line port 2 detector, open drain
8_DETOLogic interface output of the supervision line detector, open
drain
9CKTTXIMetering pulse clock input
10CTTX1Metering burst shaping external capacitor
11CTTX2Metering burst shaping external capacitor
12RTTXOMetering pulse cancellation buffer output
13FTTXOMetering pulse buffer
14RXI4 wire input port (RX input)
15ZAC1ORX buffer output
16ZACIAC impedance synthesis
17RSProtection resistor image
18ZBBalance network for 2 to 4 wire conversion
19CACIAC feedback input
20TXO4 wire output (TX output)
21VFIFeedback input for DC/DC converter controller
22CLKIPower switch controller clock
23GATEODriver for external PowerMOSFET
24RSENSEIVoltage input for current sensing
25VPOSIPositive supply input voltage
26CVCCInternal positive voltage supply filter
27AGNDAnalog ground
28RLIMIConstant current feed programming pin.
29IREFIInternal bias current setting pin
30RTHIOff–hook threshold programming pin
31RDIDC feedback and ring trip input
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NotesPin typeSymbolPin no
32ImmILTFOTransversal line current image output
33CSVRBattery supply filter capacitor
34BGNDBattery ground
35VBATRegulated battery voltage self generated
36RING22 wire port 2, RING wire (Ib is the current sunk into this pin)
37RING12 wire port 1, RING wire (Ib is the current sunk into this pin)
38NC
39NC
40NC
41TIP12 wire port 1, TIP wire (Ia is the current source from this pin)
42TIP22 wire port 2, TIP wire (Ia is the current source from this pin)
43CREVReverse polarity transition time control
44VBAT1Frame connection
System Module JM1
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System Module JM1
Immobilizer
The immobilizer uses two I/O pins of MCU. Output pin is used for writing
to the immobilizer and from input pin the state of the flip–flop can be read.
When the immobilizer is activated, the state of the flip–flop is set by the
switch and by the software via MCU output pin. After that, in the run–time,
the state of the flip–flop is read every 4 seconds. As long as the terminal
stays in its original location, the state is ”1”.
When the terminal is moved, the immobilizer switch opens and causes a
state transition. After that the state of the flip–flop is found to be ”0” and
the software sets the terminal to ”terminal moved” –state. In that state the
message ”terminal moved” can be seen in the service PC software.
PAMS Technical Documentation
Vs
Immo_set
Battery charging
The operating voltage (VSLIM) of the immobilizer is obtained from the
voltage supply (VS). There is also a 0.5mAh lithium battery for backup
purpose, which is used as power supply in the situations when the terminal is not powered. This means, that the terminal can not be moved even
if it has no power. In this case the flip–flop will change its state when the
switch is opened. When the terminal is powered again the movement will
be detected.
Immobilizer circuitry below:
&
&
&
&
Immo_det
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RF Module
Introduction
The RF module is designed for a WLL cellular phone which operates in
the NMT–450i system. The purpose of the module is to receive and demodulate the radio frequency signal from base station and to transmit
modulated RF signal to base station.
The modulation method used in the phone is FM modulation (F3E).
Rx module
Tx module
Synthesizer module
TFF-3
System Module JM1
Name of submodule
RX
SYNT
TX
All submodules are only functional blocks, They are constructed on same
PCB and have no material codes by themselves.
The RX module receives and demodulates the radio frequency signal from
the base station.
The transmitter synthesizer generates a frequency modulated RF signal for
the transmitter section. The transmission frequency is generated by a
phase–locked loop (PLL). The synthesizer circuit contains VCO, synthesizer
logic and loop filter.
The receiver synthesizer generates the first injection frequency to the receiver module. The local frequency is generated by a phase–locked loop
as in transmitter synthesizer. The synthesizer circuit contains VCO, synthesizer logic and loop filter.
The Transmitter module generates and amplifies the RF signal to be transmitted to the base station.
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System Module JM1
Technical Specifications
Maximum ratings
The maximum power supply voltage during transmission must not exceed 17 V. Higher power supply voltages may destroy the power amplifier module.
ParameterValue
Power Supply max.VB 14.5 V
PAMS Technical Documentation
Switched mode power supply with regulated output
Regulated supply voltage, VPC 8.0 V
Regulated supply voltage, VS 5.0 V
Regulated supply voltages VRX, VTX 2.82 V +/– 5 %
Operating temperature range –25 ... +55 ° C
13.5 V
Control Signals
In the following table the RF current consumption can be seen in different
modes.
control signals
RXETXSYNETXBUFFTXE
HHHH2200–2800
HHHL200RX on, TX–synthe-
HHLL160RX on, TX–synthe-
HLLL150RX on
current consump-Notes
tion (mA)
power level 2
1300–1500
600–800
power level 1
power level 0
sizer on, TX–buffer
on
sizer on
LLLL120all RF parts pow-
ered down
The current consumption of different RF parts can be seen in the following block diagram.
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Power consumption Diagram
TFF-3
System Module JM1
AGC
VS
regulator
5.0V
VRX
regulator
2.82 V
VA
regulator
2.82 V
20 mA
2 mA
3 mA
9 mA
15 mA
9 mA
LNA
IF amplifier
IF circuit
LO buffer
RX–VCO
Synthesizer IC
TXE
TXBUFF
Battery
13.3V
Battery
TXSYNE
regulator
2.82V
VTX
regulator
8.0V
VPC
2 mA
15 mA
40 mA
100 mA–
250 mA
400 mA–
2400 mA
VCTCXO
TX–VCO
1st
TX Buffer
TX power
control
and
2nd
TC Buffer
PA
Block diagram of Radio sub–module
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PAMS Technical Documentation
450 kHz FILTER
RSSI
IF CIRCUIT
IF
PHASE SHIFTER
UMA 1015
SYNTHESIZER IC
TANK CIRCUIT FOR 2.ND LO
1ST TX BUFFER
TX VCO
PLL
PLL
LOOP FILTER
MOD
SLE
SCLK
SDATA
AGC
TXBUFF
AFC
TXC
VCTCXO 14.85 MHz
TXE
REGULATOR
VS
REGULATOR
VRX
REGULATOR
8.0V
VPC
VBAT
5.0V
2.82 V
2ND TX BUFFER
RXE
REGULATOR
VTX
2.82 V
TXSYNE
IF AMPLIFIER
45 MHz
CRYSTAL FILTER
DIODE MIXER
RX–FILTER
LNA
ANTENNA
LOOP FILTER
RX LO BUFFER
DUPLEX–FILTER
RX VCO
AMPLIFIER MODULE
VA
TX POWER CONTROL
POWER DETECTOR
DIR_COUPLER
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Connections
Connections to Baseband sub–module
TFF-3
System Module JM1
Signal
Name
AFCAnalog inThe reference oscillator frequency adjust.
IFAnalog out 2nd IF signal
MODAnalog inModulation signal for transmitter (Audio + data)
RFTEMPAnalog out RF temperature, which is determined by NTC resistor.
RSSIAnalog out Received signal strength indicator. Voltage measurement.
SCLKDigital inSerial clock for synthesizer. Active state: Rising edge
SDATDigital inSerial data for synthesizer. Active state: High
SLEDigital inSynthesizer enable. Active state: High
TXBUFFDigital in1st TX buffer on/off. High when on.
TXEDigital inTransmitter on/off. High when on.
TXSYNEAnalog out TX synthesizer power control
VBPowerBattery voltage
VAPowerRegulated voltage for synthesizer IC
VRXPowerRegulated voltage for receiver & receiver synth
VTXPowerRegulated voltage for transmitter synth
VSPowerRegulated voltage for receiver LNA
TypeFunction
VPCPowerRegulated voltage for 1 st. TX buffer and Power control
PBFC450R12DR
IF circuitToshibaTA31136F4349694
VCTCXOKDSDTO–432H14510171
PLL ICPhilipsUMA1015AM4340393
RX VCOAlpsURAY8XR02A4350169
TX VCOAlpsURAY8XT02A4350167
Power amplifierMitsubishiM57704L4352537
455P005
Antenna
Phone uses a fixed antenna. The electrical length of antenna is 1/2 wave
length.
Receiver
The receiver is a dual–conversion superheterodyne using two intermediate frequencies, 45 MHz and 450 kHz.
The RF signal from the duplexer RX port is applied to the low noise RF
amplifier. The amplifier is realized with transistor V910. Amplifier stage
input matching is accomplished by C903 and L901. R901 and R924 are
used for biasing. Output matching is carried out by L911. C902 and C912
are used for RF bypassing. Stability is ensured with serial connection of
R913 and C901 to the ground.
Next the signal is filtered with Z930. The filter is followed by a single balanced diode mixer, comprising Z931, Z932, Z950 and V930.
After the mixer the 45 MHz IF signal is filtered with crystal filter Z940. The
matching between mixer and the filter comprises L940, R940 and C940.
After that the IF signal is amplified by V960. Input matching is performed
by L980 and L981. The biasing elements comprise R960, R961, R962
and R963. Output matching elements comprise L961. Capacitors C960
and C962 are used for RF bypassing.
The second mixer, IF amplifier and quadrature detector are all integrated
in the circuit N970. The second LO frequency, 44.55 MHz, is the third
harmonic of the VCTCXO frequency. LO signal is realized with tank circuit
C972 and L971. After the mixer the 450kHz IF signal is filtered with ceramic filter Z970. The IF amplifier output signal is phase shifted by resonance circuit C977, R971 and L970. After this the signal is rectified to
square wave.
The RSSI and 2nd IF signal (450 kHz) are fed to the audio/logic unit.
RX Synthesizer
The first injection frequency is generated by a digital phase locked loop
(PLL). The PLL consists of a VCO, a loop filter and a PLL IC which in-
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cludes reference and main dividers. The output frequency of the loop
(LO) is obtained from a voltage–controlled oscillator (VCO) G520. The
output level of VCO is 0 dBm +/– 2 dB. The VCO output signal is amplified by transistor V950 and fed to the receiver mixer via Z950. A portion
of output signal is fed back to the synthesizer.
The overall divisor of the chain is selected according to the desired channel.
The internal dividers of N400 are programmed with 17 bits, which are
transferred serially on the SDATA (synthesizer data) line from the processor into an internal shift register also located in N400. Data transfer is
timed with SCLK clock pulses.
The divided frequency is compared with a highly stable reference frequency from VCTCXO by a phase comparator in the PLL circuit (N400).
The phase comparator controls the VCO frequency by means of a DC
voltage through the loop filter so as to keep the divided frequency applied
to the phase comparator equal to the fixed reference frequency.
TFF-3
System Module JM1
The reference frequency is 12.5 kHz. This reference frequency is obtained from voltage controlled temperature compensated crystal oscillator
(VCTCXO). Oscillator frequency is 14.85 MHz. The VCTCXO frequency is
divided by 1188.
RX loop filter
The Phase comparator output is pin 3. If the VCO frequency is too high,
the output goes low and discharge integrator capacitor C421. After this,
the DC control voltage and the VCO frequency will decrease.
If the VCO frequency is too low, the output goes high and charge the integrator capacitor C421. Thereafter the DC control voltage and the VCO
frequency will go up.
Output pulses from the phase detector have to be supplied to the loop filter. The function of the integrator is to convert positive and negative
pulses to DC voltage. The remaining ripple and AC components are filtered in the three stage lowpass filter.
TX Synthesizer
The transmitter synthesizer generates a frequency modulated transmitter
signal to the transmitter section. The injection frequency for the transmitter is generated by a digital phase locked loop (PLL). The modulated TX
frequency is generated in the TX–VCO (G420). Output level of the VCO is
0 dBm +/– 2 dB. After VCO, the TX signal is amplified in the 1st TX buffer
V440 before the 2nd TX buffer V610 and power amplifier module. Gain in
the 1st TX buffer is about 14 dB. Gain in 2nd TX buffer is controlled with
variation of supply voltage coming from power control circuit.
TX Loop Filter
Output pulses from the phase detector N400 pin 17 are supplied to the
loop filter. The integrator, which is constituted of R433, C435 and C436,
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System Module JM1
converts positive and negative pulses to DC voltage. The remaining ripple
is filtered in the three stage low–pass filter.
Transmitter
The transmitter is basing on the power amplifier module (N620). The
modulated RF signal from the TX synthesizer is applied to the 50 ohm input of the transmitter module. T he power level is controlled by the voltage which is supplied to pin 2 of PA module and pin 4 of V610 (2nd TX
buffer’s supply voltage). A voltage proportional to the output power is rectified from a coupler strip by DC–biased Schottky diode V640. This rectified voltage is fed to a differential amplifier which consists of transistor
V631 and V632 .
The reference voltage to control PA module is filtered from the PWM signal TXC to DC voltage by two stage lowpass filter. The differential amplifier adjusts the source voltage of the transistor V630 so that the reference
voltage and the voltage proportional to the output power are equal. The
transmitter is switched on when TXE goes high (logic 1), which enables
the transmitter power control circuit by transistor V633 . When the transmitter is inactive (TXE low) the RF level from the transmitter is reduced
below –57 dBm.
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PAMS Technical Documentation
RF Characteristics
Temperature range
TFF-3
System Module JM1
Line SymbolMinimumTypical /
Nominal
Operating temperature–25+55°C
MaximumUnit / Notes
Duplexer specification
TransmitterReceiver
Frequency452.5...457.5 MHz462.5...467.5 MHz
Insertion loss max2.2 dB4.8 dB
Ripple at BW max1.0 dB2.0 dB
Termination impedance50 W50 W
Permissible input power25 W1 W
V.S.W.R. at BW1.6 max.1.6 max.
Frequency range462.500...467.475 MHz
TypeFM receiver, 2 IFs
Intermediate Frequencies45 MHz, 450 kHz
NRF–sensitivity< –113 dBm (SINAD 20 dB)
ERF–sensitivity< –110 dBm (SINAD 20 dB)
NAdjacent channel selectivity> 67 dB (25 kHz)
EAdjacent channel selectivity> 60 dB (25 kHz)
NSpurious response rejection> 67 dB
NIntermodulation rejection> 67 dB
Blocking :
ParameterUnit / Notes
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E=Extreme
conditions
PAMS Technical Documentation
Unit / NotesParameterN=Normal
NRX–band excluding the receiver freq. ±
10 MHz
NSpurious emissions
N100 kHz ... 1000 MHz< –57 dBm
N1000 MHz ... 4000 MHz< –47 dBm
N / EAudio harmonic distortion< 5 % (third harmonic)
N / ENoise & hum< –35 dB
N / ERSSI dynamic range> 65 dB
N / EAGC attenuation5...10 dB
> –80dB
Preamplifier
MinimumTypical /
Nominal
Supply voltage5.0V
Frequency band462.5467,475MHz
Current consumption (AGC off)1820mA
Current consumption (AGC on)7 - 9mA
Insertion gain (AGC off)1922dB
MaximumUnit / Notes
Insertion gain (AGC on)10dB
Gain flatness±1dB
Noise figure1.61.8dB
Reverse isolation3040dB
IIP3–5dBm
Input return loss (Z0=50W)–4dB
Output return loss (Z0=50W)–11dB
RX–filter
MinimumTypical /
Nominal
Center frequency, f
Bandwidth (–0,8 dB)±3MHz
Stopband attenuation
Center frequency450kHz
Temperature range+10 (–30)+50(+70)°C
6 dB bandwidth± 6.0(5,5)kHz
26 dB bandwidth± 9.0(10,0)kHz
50 dB bandwidth± 12,5 (13,0)kHz
Insertion loss5,0(6,0)dB
Ripple3,0(4,0)dB
Stopband attenuation
MaximumUnit / Notes
Unit / NotesMaximumTypical /
f0 ±13 ... 25 kHz
f0 ±25 ... 100
kHz
Spurious response re-
jection 0,1...1MHz
Group delay time100(120)ms at f0 ±4 kHz
Input & output imped-
ance
40
35
20dB
1,351,51,65kW
dB
dB
IF–circuit
MinimumTypical /
Nominal
Supply voltage2.82V
Current consumption2,0mA
2. lo frequency44.550MHz
RSSI dynamic range70dB
Case16 SSOP
0603
L9813645013 Chip coil220 n10 % Q=15/25 MHz
0603
B7004510155 Crystal14.7456 M+–50PPM
B7304510231 Crystal3.579545 M+–50PPM
G2604700057 Cell assy. polyacene 0.05mah 3.3v3.3V
G4104510171 VCTCXO14.85 M+–2PPM 3.0V
F1015110019SM, fuse s 5a 125v sp_tff_3 only
F1025119002SM, fuse f2.0a 32v 1201206
Z7013640035 Filt z>450r/100m 0r7max 0.2a 06030603
Z7023640035 Filt z>450r/100m 0r7max 0.2a 06030603
Z9404510085 XTAL filter45 M+–7.5KHZ 4POLE
Z9704510061 Cer.filt 450+–6khz 11.8x7.511.8x7.5
V1004210100 TransistorBC848Wnpn 30 V SOT323
V1014110074 Schottky diodeSTPS340U40 V 3 A SOD6
V1024110028 Trans. supr.16V23 A 600 W
DO214AA
V1044110028 Trans. supr.16V23 A 600 W
DO214AA
V1054110074 Schottky diodeSTPS340U40 V 3 A SOD6
V1074100567 Sch. diode x 2BAS70–0470V15 mA SERSOT23
V1084110074 Schottky diodeSTPS340U40 V 3 A SOD6
V2604110072 Diode x 2BAV99W70 V 0.2 A SOT323
V2614110072 Diode x 2BAV99W70 V 0.2 A SOT323
V2624210100 TransistorBC848Wnpn 30 V SOT323
V2634110072 Diode x 2BAV99W70 V 0.2 A SOT323
V4404210091 TransistorBFG540W/Xnpn 15 V SOT343
V4504219922 Transistor x 2UM6
V6104210003 TransistorBLT80npn 10 V 0.22 A
SOT223
V6304202456 MosFetp–ch 50 V 8 A TO252
V6314200917 TransistorBC848B/BCW32npn 30 V 100 mA
SOT23
V6324200917 TransistorBC848B/BCW32npn 30 V 100 mA
SOT23
V6334200917 TransistorBC848B/BCW32npn 30 V 100 mA
SOT23
V6404100567 Sch. diode x 2BAS70–0470V15 mA SERSOT23
V6414100567 Sch. diode x 2BAS70–0470V15 mA SERSOT23
V6424100285 Diode x 2BAV9970 V 200 mA
SER.SOT23
V6454100567 Sch. diode x 2BAS70–0470V15 mA SERSOT23
V7514113651 Trans. supr.QUAD6 V SOT23–5
V7604210100 TransistorBC848Wnpn 30 V SOT323
System Module JM1
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System Module JM1
V8014211421 MosFetp–ch 20 V TO263
V8024115805 DiodeES1CULTR A D0214AC
V8034110053 Trans. supr.82V(SMB)DO214AA
V8044110072 Diode x 2BAV99W70 V 0.2 A SOT323
V8054110072 Diode x 2BAV99W70 V 0.2 A SOT323
V9104210013 TransistorBFP450npn 4. V SOT343
V9294210102 TransistorBC858Wpnp 30 V 100 mA
200MWSOT323
V9304100567 Sch. diode x 2BAS70–0470V15 mA SERSOT23
V9314219922 Transistor x 2UM6
V9504210066 TransistorBFR93AWnpn 12 V 35 mA
SOT323
V9604210066 TransistorBFR93AWnpn 12 V 35 mA
SOT323
D2004370501IC, MCUTQFP120
D2304340357IC, EEPROMSO8
D2504370405IC, MCU8S2
D2604303679IC, 4 x nand74HC00SO14
N1014340639IC, regulatorLM29375 V 500 mATO263
N1024340641IC, regulatorLM29378 V 500 m TO263
N1034370471Power asic for etacs/nmt450
N1054340663IC, regulator LP29853.3 V 150 mA SOT23–5
N1504340663IC, regulator LP29853.3 V 150 mA SOT23–5
N4004340393IC, 2xsynth 1.1ghz UMA1015AMSSOP20
N7004370381IC, nmt audio/signalling MASITQFP64
N7314340703Mt88l70 dtmf receiver 3v SO18
N8014340627Stlc3065 wll subscr i/face TQFP44
N9704349694IC, if amp+fm detector TA31136SSO16
S2605200914 Push button switch 2–pole 6x7 SMD
X1015414943 Dc–jack d6.3/2 PCB
X6405426384 Tnc conn 50ohm PCB
X7505416518 Modular jack 8 pole smd
X8015409043 SM, modular jack 6pol right aANGLE
A6019517013 SM, d rf shield pa–can dmc00455
A9019517013 SM, d rf shield pa–can dmc00455
A9029517013 SM, d rf shield pa–can dmc00455
F1015110019SM, fuse s 5a 125v sp_tff_3 only
F1025119002SM, fuse f2.0a 32v 1201206
Z7013640035 Filt z>450r/100m 0r7max 0.2a 06030603
Z7023640035 Filt z>450r/100m 0r7max 0.2a 06030603
Z9404510085 XTAL filter45 M+–7.5KHZ 4POLE
Z9704510061 Cer.filt 450+–6khz 11.8x7.511.8x7.5
V1004210100 TransistorBC848Wnpn 30 V SOT323
V1014110074 Schottky diodeSTPS340U40 V 3 A SOD6
V1024110028 Trans. supr.16V23 A 600 W
DO214AA
V1044110028 Trans. supr.16V23 A 600 W
DO214AA
V1054110074 Schottky diodeSTPS340U40 V 3 A SOD6
V1074100567 Sch. diode x 2BAS70–0470V15 mA SERSOT23
V2604110072 Diode x 2BAV99W70 V 0.2 A SOT323
V2614110072 Diode x 2BAV99W70 V 0.2 A
SOT323V2624210100TransistorBC848Wnpn 30 V
SOT323
V2634110072 Diode x 2BAV99W70 V 0.2 A SOT323
V4404210091 TransistorBFG540W/Xnpn 15 V SOT343
V4504219922 Transistor x 2UM6
V6104210003 TransistorBLT80npn 10 V 0.22 A
SOT223
V6304202456 MosFetp–ch 50 V 8 A TO252
V6314200917 TransistorBC848B/BCW32npn 30 V 100 mA
SOT23
V6324200917 TransistorBC848B/BCW32npn 30 V 100 mA
SOT23
V6334200917 TransistorBC848B/BCW32npn 30 V 100 mA
SOT23
V6404100567 Sch. diode x 2BAS70–0470V15 mA SERSOT23
V6414100567 Sch. diode x 2BAS70–0470V15 mA SERSOT23
V6424100285 Diode x 2BAV9970 V 200 mA
SER.SOT23
V6454100567 Sch. diode x 2BAS70–0470V15 mA SERSOT23
V7514113651 Trans. supr.QUAD6 V SOT23–5
V7604210100 TransistorBC848Wnpn 30 V SOT323
V8014211421 MosFetp–ch 20 V TO263
V8024115805 DiodeES1CULTR A D0214AC
V8034110053 Trans. supr.82V(SMB)DO214AA
V8044110072 Diode x 2BAV99W70 V 0.2 A SOT323
V8054110072 Diode x 2BAV99W70 V 0.2 A SOT323
V9104210013 TransistorBFP450npn 4. V SOT343
V9294210102 TransistorBC858Wpnp 30 V 100 mA
PAMS Technical Documentation
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PAMS Technical Documentation
200MWSOT323
V9304100567 Sch. diode x 2BAS70–0470V15 mA SERSOT23
V9314219922 Transistor x 2UM6
V9504210066 TransistorBFR93AWnpn 12 V 35 mA
SOT323
V9604210066 TransistorBFR93AWnpn 12 V 35 mA
SOT323
D2004370501IC, MCUTQFP120
D2304340357IC, EEPROMSO8
D2504370405IC, MCU8S2
D2604303679IC, 4 x nand74HC00SO14
N1014340639IC, regulatorLM29375 V 500 mA TO263
N1024340641IC, regulatorLM29378 V 500 mA TO263
N1034370471Power asic for etacs/nmt450
N1054340663IC, regulatorLP29853.3 V 150 mA
SOT23–5
N1504340663IC, regulatorLP29853.3 V 150 mA
SOT23–5
N4004340393IC, 2xsynth 1.1ghz ssopUMA1015AMSSOP20
N7004370381IC, nmt audio/signalling tqfp6MASITQFP64
N7314340703Mt88l70 dtmf receiver 3v so18SO18
N8014340627Stlc3065 wll subscr i/face tqfp44TQFP44
N9704349694IC, if amp+fm detector sso TA31136SSO16
S2605200914 Push button switch 2–pole 6x7 smdSMD
X1015414943 Dc–jack d6.3/2 pcb
X6405426384 Tnc conn 50ohm pcbPCB
X7505416518 Modular jack 8 pole smd
X8015409043 SM, modular jack 6pol right anglANGLE
A6019517013 SM, d rf shield pa–can dmc00455
A9019517013 SM, d rf shield pa–can dmc00455
A9029517013 SM, d rf shield pa–can dmc00455
9854359 PCB JM1 110.0X195.0X1.6 M4 1/PA
9854359 PC boardJM1110.0x195.0x1.6 m4