Figure 23: Marking specification for the light guide ............................................. 89
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System Connector
This section describes the elect rical connection and interface levels between the baseband, RF and UI parts. The electrical interface specifications are collected into tables that
cover a connector or a defined int erface.
The system connector includes the following parts:
– DC connector for external plug–in charger and a desktop charger
– System connector for accessories and intelligent battery packs
The System connector is used to connect the transceiver to accessories.
System connector pins can be used to connect intelligent battery packs to the trans-
ceiver.
Contact 1
DC–jack
2,3,4
Contact 5
2
3
Slide Detect
4
Contacts
8...13
6
7
8
13
Contact 14
Figure 1: System connector module
Solderable element,
14
Cable/Cradle connector
guiding/fixing hole, 2 pcs
2 pcs
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IBI connector
(6 pads)
B side view
14
8
Fixing pads (2 pcs)
1
7
PCB
DC Jack
Microphone
acoustic ports BB
Bottom
connector (6 pads)
A
B
Charger pads (3 pcs)
A side view
Cable locking holes (3 pcs)
Figure 2: System Connector - detailed
Table 1: System connector signals
PinNameFunctionDescription
1V_INBottom charger contactsCharging voltage
2L_GNDDC JackLogic and charging ground
3V_INDC JackCharging voltage
4CHRG_CTRLDC JackCharger control
9SGNDBottom & IBI connectorsAudio signal ground
10XEARBottom & IBI connectorsAnalog audio output
11MBUSBottom & IBI connectorsBidirectional serial bus
12FBUS_RXBottom & IBI connectorsSerial data in
13FBUS_TXBottom & IBI connectorsSerial data out
14L_GNDBottom charger contactsLogic and charging ground
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DC Connector
The electrical specifications in Table 3 shows the idle voltage produced by the acceptable
chargers at the DC connector input. The absolute maximum input voltage is 18V due to
the transient suppressor that is protecting the charger input.
Slide Microphone
The microphone is connected to the slide by means of springs it has a microphone input
level specified in Table 2. The microphone requires bias current to operate which is generated by the COBBA_GJP ASIC.
Slide Connector
An Interrupt signal to MAD2WD1 determines whether the slide is in an open or closed
position.
Roller Interface
A mechanical solution is implemented and thre e interrupts are fed to the MAD2WD1.
Keys and Keymatrix
0–9, *, #, send, end, soft_1, soft_2, power_on_off, rolle r_push,
Headset Connector
The external headset device is connected to the system connector, from which the signals are routed to COBBA_GJP microphone inputs and earphone outputs.
NAMICN mounted in
slide
NAMICP mounted in
slide
Table 2: Mic signals of the system connector
0212.5mVConnected to COBBA_GJP MIC2N input. The
maximum value corresponds to 1 kHz, 0 dBmO
network level with input amplifier gain set to
32 dB, typical value is maximum value - 16 dB.
0212.5mVConnected to COBBA_GJP MIC2P input. The
maximum value corresponds to 1 kHz, 0 dBmO
network level with input amplifier gain set to
32 dB, typical value is maximum value - 16 dB.
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Table 3: System/IBI connector
IB-
Pin
NAMEFunctionMinTypMaxUnitDescription
pin
10YesXEARAnalog
audio output (from
phone to
accessory)
Accessory
detection
(from
accessory
to phone)
16
4.7
0
47
10
10
1.0
100
0.5
6.8
300
0.2
V
Ω
Output AC impedance (ref GND)
resistor tol. is 5%
uF
Series output capacitance
Load AC impedance to GND: Head-
Ω
set
Load AC impedance to SGND:
kΩ
External accessory
Max. output level. No load
p-p
Resistance to accessory ground (in
kΩ
accessory)
V
DC voltage (ref. SNGD). External
accessory
Load DC resistance to SGND. Exter-
kΩ
nal accessory
DC voltage (ref SGND). Headset
V
with closed switch
16
2.8
47
1500
Load DC resistance to SNGD. Head-
Ω
set with closed switch
DC voltage (ref SGND). No acces-
V
sory or headset with open switch
Pull-up resistor to VBB in phone
kΩ
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Table 3: System/IBI connector
IB-
Pin
NAMEFunctionMinTypMaxUnitDescription
pin
8YesXMICAnalog
audio input
(from
accessory
to phone)
Headset
microphone
input (from
accessory
to phone)
Accessory
mute. Voltage compared to
SGND.
(from
phone to
accessory)
Headset
detection
(from
accessory
to phone)
(NO TAG)
2.0
100
2.0
2.5
100
2.5
0
1.62.0
1.47
0
49
2.2
1
2.2
600
200
2.9
1.55
2.4
2.9
1.33VV
kΩ
Ω
V
kΩ
kΩµA
mV
p-p
V
V
V
kΩ
Input AC impedance
Accessory source AC impedance
Maximum signal level
p-p
Input AC impedance
Headset source AC impedance
Bias current
Maximum signal level
Not muted
Muted, without headset
Comparator reference in accessory
No headset (ref SGND)
Headset connected (ref SGND)
Pull-up resistor to VBB in phone
Function
DLR-3
Datacable
Detection
9YesSGNDAudio sig-
nal ground.
Separated
from
phone GND
(from
phone to
accessory)
440733mVDLR-3 detected (ref SGND)
Output AC impedance (ref GND)
Series output capacitance
Resistance to phone ground (DC)
(in phone)
Resistance to accessory ground (in
accessory)
DC voltage compared to phone
GND
DC voltage compared to accessory
GND
-0.2
-5
47
10
380
100
+0.2
+5
Ω
µF
Ω
kΩ
V
V
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Table 3: System/IBI connector
IB-
Pin
NAMEFunctionMinTypMaxUnitDescription
pin
13YesFBUS_TXSerial data
out (from
phone to
accessory)
12YesFBUS_RXSerial data
in (from
accessory
to phone)
0.1
1.7
0
2.0
47
220
47
220
47
0.8
2.8
100
150
1
0.8
2.8
V
V
kΩ
kΩ
Ω
pF
µs
V
V
kΩ
kΩ
Output low voltage @ I
GND)
Output high voltage @ I
(ref GND)
Pull-up resistor in phone
Pull-down resistor in accessory
Serial (EMI filtering) resistor in
phone
Cable capacitance
Rise/fall time
Input low voltage (ref GND)
Input high voltage (ref GND)
Pull-down resistor in phone
Pull-up resistor in accessory
<mA (ref
OL
<4mA
OH
2.2
150
2
1
kΩ
pF
µs
µs
Serial (EMI filtering) resistor in
accessory
Cable capacitance
Rise/fall time @ 115kbits/s
Rise/fall time @ 230kbits/s
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Table 3: System/IBI connector
IB-
Pin
NAMEFunctionMinTypMaxUnitDescription
pin
11YesMBUS
FLASH_
CLK
2,
-L_GNDLogic and
14
Bidirectional
serial bus
charging
ground
(separated
from
phone GND
by EMI
components)
0
2.0
0
0.8
2.8
0.8
V
V
V
Input low voltage (ref GND)
Input high voltage (ref GND)
Output low voltage @ I
(ref GND)
2.1
2.9
V
Output high voltage @ I
µA (ref GND)
4.7
220
100
kΩ
kΩ
Ω
Pull-up resistor in phone
Pull-down resistor in accessory
Serial (EMI filtering) resistor in
phone
200
5
pF
µs
Cable capacitance
Rise/fall time @ 9600 bits/s
01.0AGround current
<4mA
OL
OH
<100
4,5-CHRG_
CTRL
Charger
control
(from
phone to
accessory)
0
1.7
1
32
20
30
0.8
2.9
37
99
V
V
Hz
%
kΩ
kΩ
Output low voltage @ I
Output high voltage @ I
<20 µA
OL
<20 µA
OH
PWM frequency
PWM duty cycle
Serial (EMI filtering) resistor in
phone
Pull-down resistor in phone
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Table 3: System/IBI connector
IB-
Pin
NAMEFunctionMinTypMaxUnitDescription
pin
1,3-VINFast
charger
(from
accessory
to phone)
Slow
charger
(from
accessory
to phone)00
0
0
8.5
0.85
100
100
100
200
15
V
A
mV
p-p
mV
p-p
mV
p-p
mV
p-p
V
peak
Charging voltage
Charging current
Ripple voltage @ f = 20...200Hz,
load = 3 & 10 Ω
Ripple voltage @ 4 = 0.2...30kHz,
load = 3 & 10 Ω
Ripple voltage @ f > 30kHz, load =
3 & 10 Ω
Total ripple voltage @ f > 20Hz,
load = 3 & 10 Ω
Charging voltage (max . =
unloaded, +20% overvoltage in
mains)
1.0
A
Charging current (max. = shorted,
peak
+20% overvoltage in mains)
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Baseband
HOOKDET
MAD
HEADDET
CCONT
EAD
HF
COBBA
–GJP
AUX
OUT
PD2
AGND
10m
10k
100n
AGND
10u
27p
100n
1u
220k
220k
VBBVBB
2k247k
2k2
VBB
47k
100MHz
33R
AGND
47R
XEAR
LGND
PC–Board
R01
SW01
+
+
+
C01
C03
C02
HFCM
MIC1N
MIC1P
MIC3N
MIC3P
AGND
Note 1: Grey resistor are in the border of ”EMI clean” and ”dirty” areas.
Note 2: AGND is connected directly to the GND on PCB close to HF parts.
Note 3: ESD protection diodes are not shown.
Battery Connector
The BSI contact on the battery co nnector is used to detect when thebattery is removed
with power switched on enabling the SIM card operation to shut down first. The BSI contact in the battery pack should be shorter than the supply power contacts to give enough
time for the SIM shut down.
Figure 3: Combined headset, system connector audio signals
L01
Z01
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No metal in these areas!
old connector type
12
B side view.
phone
1+VBATT
2BSI
3BTEMP
4-VBATT
34
Vibra Alerting Device
A special battery pack contains a vibra motor. The vibra is controlled with one PWM signal by the MAD2WD1 via the BTEMP battery terminal.
Figure 4: Battery connector locations
SIM Card Connector
The SIM card connector is located on the PCB. Only small SIM cards are supported.
321
456
Figure 5: SIM Card Reader Ultra phone
Table 4: SIM Connector Electrical Specifications
PinNameParameterMinTypMaxUnitNotes
1GNDGND00 VGround
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Table 4: SIM Connector Electrical Specifications
PinNameParameterMinTypMaxUnitNotes
2VSIM5V SIM Card
3V SIM Card
3DATA5V Vin/Vout
3V Vin/Vo ut
4SIMRST5V SIM Card
3V SIM Card
5SIMCLK Frequency
Trise/Tfall
6VPP5V SIM Card
3V SIM Card
VSIM supply voltages are specified to meet type approval requirements regardless of the
tolerances in components.
Infrared Transceiver Module
An infrared transceiver module is designed as a substitute for hardwired connections
between the phone and a PC. The infrared transceiver module is a stand alone component. In DCT3 the module is located inside and at the top of the phone.
4.8
2.8
4.0
0
2.8
0
4.0
2.8
4.8
2.8
5.0
3.0
“1”
“0”
“1”
“0”
“1”
“1”
3.25
5.0
3.0
5.2
3.2
VSIM
0.5
VSIM
0.5
VSIM
VSIM
25
5.2
3.2
VSupply voltage
VSIM data
Trise/Tfall max 1 us
VSIM reset
MHz
ns
VProgramming voltage
SIM clock
pin6 and pin2 tied
together
The Rx and Tx is connected to the FBUS via a dual bus buffer. The module and buffer is
activated from the MAD2 with a pull up on IRON. The Accif in MAD2 performs pulse
encoding and shaping for transmitted data pulses and detection and decoding for
received data pulses.
The data is transferred over the IR link using serial FBUS data at speeds 9.6, 19.2, 38.4,
57.6 or 115.2 kbits/s, which leads to maximum throughput of 92.160 kbits/s. The used IR
module complies with the IrDA SIR specification (Infra Red Data Association), which is
based on the HP SIR (Hewlett–Packard‘s Serial Infra Red) concept.
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The following figure gives an example of IR transmission pulses. In IR transmission, a
light pulse corresponds to 0–bit and a ”dark pulse” corresponds to 1–bit.
constant pulse
IR TX
UART TX
startbitstopbit
The FBUS cannot be used for external accessory communication, when the infrared mode
is selected. Infrared communication reserves the FBUS completely.
Real Time Clock
Requirements for a real time clock implementation are a basic clock (hours and minutes),
a calender and a timer with alarm and power on/off –function and miscellaneous calls.
The RTC will contain only the time base and the alarm timer but all other functions (e.g.
calendar) will be implemented with the MCU software. The RTC needs a power backup to
keep the clock running when the phone battery is disconnected. The backup power is
supplied from a rechargable polyacene battery that can keep the clock running for
approximately ten minutes. If the backup has expired, the RTC clock restarts after the
main battery is connected. The CCONT resets the MCU in approx 62ms and the 32kHz
source is settled (after approx. 1s).
The CCONT is an ideal place for an integrated real time clock as the asic already contains
the power up/down functions and a sleep control with the 32kHz sleep clock, which is
always running when the phone battery is connected. This sleep clock is used for a time
source to a RTC block.
1
0100110
Figure 6: IR tramsmission frame - example
Baseband Module
Technical Summary
The baseband architecture is basically similar to DCT3 GSM phones. DCT3.5 differs from
DCT3 in the single PCB concept and the serial interface between MAD2WD1 and
COBBA_GJP and MAD2WD1 and CCONT. In DCT3.5 the MCU, the system-specific ASIC
and the DSP are intergrated into one ASIC, called the MAD2WD1 chip, which takes care
of all the signal processing and operation controlling tasks of the phone.
The baseband architecture supports a power saving function called ”sleep mode”. This
sleep mode shuts off the VCTCXO, which is used as system clock source for both RF and
baseband. During the sleep mode the system runs from a 32 kHz crystal. The phone is
wakened up by a timer running from this 32 kHz clock supply. The sleeping time is deter-
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mined by some network parameters. When the sleep mode is entered both the MCU and
the DSP are in standby mode and the normal VCTCXO clock has been switched off.
The battery voltage range in DCT3 family is 3.0V to 4.5V depending on the battery charge
and used cell type (Li–Ion or NiMH). Because of the lower battery voltage the baseband
supply voltage is lowered to a nominal of 2.8V.
The baseband is running from a 2.8V power rail which is supplied by a power controlling
asic (CCONT). In the CCONT there are seven individually controlled regulator outputs for
the RF section, one 2.8V output for the baseband plus a core voltage for MAD2WD1.
However this is not used in NSB–5 because the chipset support s 2.8 Volts. In addition
there is one +5V power supply output(V5V). TheCCONTalso contains a SIM interface
which supports both 3V and 5V SIM cards. A real time clock function is integrated into
the CCONT which utilizes the same 32KHz clock supply as the sleep clock. A backup
power supply is provided for the RTC, which keeps the real time clock running when the
main battery is removed. The backup power supply is a rechargeable polyacene battery
with a backup time of ten minutes.
The interface between the baseband and the RF section is handled by a specific asic. The
COBBA_GJP asic provides A/D and D/A conversion of the in–phase and quadrature
receive and transmit signal paths and also A/D and D/A conversions of received and
transmitted audio signals to and from the UI parts. Data transmission between the
COBBA_GJP and the MAD2WD1 is implemented using serial connections. Digital speech
processing is handled by the MAD2WD1 asic. The COBBA_GJP asic is a dual supply voltage circuit, the digital parts are running from the baseband supply VBB and the analog
parts are running from the analog supply VCOBBA (VR6).
LCD
vibra
motor
IR
roller
TX/RX SIGNALS
COBBA SUPPLY
COBBA_GJP
MAD2WD1
+
MEMORIES
RF SUPPLIES
CCONT
BB SUPPLY
core voltage
CHAPS
PA SUPPLY
SIM
32kHz
CLK
SLEEP CLOCK
VBAT
13MHz
CLK
SYSTEM CLOCK
BATTERY
NiMH LiIon
AUDIOLINES
BASEBAND
SYSCON
Figure 7: Block Diagram
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Power Distribution
In normal operation the baseband is powered from th e phone‘s battery. The battery consists of one Lithium–Ion cell. There is also a possibility to use batteries consisting of
three Nickel Metal Hydride cells or one solid state cell. An external charger can be used
for recharging the battery and supplying power to the phone. The charger can be either
so called fast charger, which can deliver supply current up to 1600 mA or a standard
charger that can deliver approx 300 mA.
The CCONT provides voltage to th e circuitry excluding the RF PA, LCD, and IrDa, which
are supplied via a continuous power rail direct from the battery. The RF PA module has a
cutoff voltage of 3.1V. The batter y(see note) feeds power directly to several parts of the
system: CCONT, PA, and UI circuitry (display lights, buzzer). The four dedicated control
lines, RxPwr, TxPwr, SIMCardPwr, and SynthPwr from MAD2 to CCONT have changed to a
serial control signal between MAD2WD1 and CCONT. Figure 8 shows a simplified block
diagram of the power distribution.
Note : In battery terms there is VBATT and VB, the difference is a filter (coil and capacitors).
The power management circuitry provides protection against overvoltages, charger failures, and pirate chargers, etc., that could cause damage to the phone.
PA SUPPLY
VCOBBA
COBBA_GJP
LCD
MODULE
VBAT
VBB
MAD2WD1
+
MEMORIES
BASEBAND
RF SUPPLIES
CCONT
PWRONX
CNTVR
VBB
core volta ge
PURX
POWER
MGMT
VIN
VSIM
VBAT
PWM
SIM
RTC
BACKUP
BATTERY
sram
CONNECTOR
Figure 8: Baseband power distribution
The heart of the power distribution is the CCONT. It includes all the voltage regulators
and feeds the power to most of the system. The whol e baseband is powered from the
same regulator which provides 2.8V baseband supply VBB. The baseband regulator is
active always when the phone is powered on. The core baseband regulator feeds,
amongst others, MAD2WD1 and memories, COBBA_GJP digital parts and the LCD driver
in the UI section. COBBA_GJP analog parts are powered from a dedicated 2.8V supply
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VCOBBA by the CCONT. There is a separate regulator for a SIM card which is selectable
between 3V and 5V and controlled by the SIMPwr line from MAD2WD1 to CCONT.
The CCONT contains a real time clock function, which is powered from a RTC backup
when the main battery is disconnected. The RTC backup is rechargable polyacene battery.
CCONT includes also six additional 2.8V regulators providing power to the RF section.
These regulators can be controlled by the seriel interface from MAD2WD1; i.e., RF regulator control register in CCONT which MAD2WD1 can update.
CCONT supplies a core voltage to the MAD2WD1. The core voltage is by default 1.975V,
but can be set lower, depending on the MAD2 silicon technology.
RAM_BCK is not used.
CCONT generates also a 1.5 V reference voltage VREF to COBBA_GJP, SUMMA. The VREF
voltage is also used as a reference to some of the CCONT A/D converters and as a reference for al the other regulators.
In addition to the above-mentioned signals, MAD2WD1 includes also TXP control signal
which goes to SUMMA power control block and to the power amplifier. The transmitter
power control TXC is led from COBBA_GJP to SUMMA.
Table 5: CCONT current output capability/nominal voltage
V_RAM_bck/VR350mA2.8Vn ormal mode 2.8V. 2.0V for data
retention. (not used)
VSIM must fulfill the GSM11.10 current spike requirements.
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VSIM and V5V can give a total of 30 mA.
Power Up
The baseband is powered up by:
1Pressing the power key, that generates a PWRONX interrupt signal from the
power key to the CCONT, which starts the power up procedure.
2Connecting a charger to the phone. The CCONT recognizes the charger from the
VCHAR voltage and starts the power up procedure.
3A RTC interrupt. If the real time clock is set to alarm and the phone is switched
off, the RTC generates an interrupt signal, when the alarm is gone off. The RTC
interrupt signal is con-nected to the PWRONX line to give a power on signal to
the CCONT just like the power key.
4A battery interrupt. Intelligent battery packs have a possibility to power up the
phone. When the battery gives a short (10ms) voltage pulse through the BTEMP
pin, the CCONT wakes up and starts the power on procedure.
Power up with a charger
When the charger is connected, CCONT will switch on the CCONT digital voltage as soon
as the battery voltage exeeds 3.0V. The reset for CCONT’s digital parts is released when
the operating voltage is stabilized ( 50 us from switching on the voltages). Operating
voltage for VCXO is also switched on. The counter in CCONT digital section will keep
MAD in reset for 62 ms (PURX) to make sure that the clock provided by VCXO is stable.
After this delay, MAD reset is released, and VCXO–control (SLEEPX) is given to MAD. The
diagram assumes empty battery, but the situation would be the same with full battery:
When the phone is powered up with an empty batter y pack using the standard charger,
the charger may not supply enough current for standard power-up procedure and the
powerup must be delayed.
Power Up With the Power Switch (PWRONX)
When the power on switch is pressed the PWRONX signal will go low. CCONT will switch
on the CCONT digital section and VCXO as was the case with the charger-driven power
up. If PWRONX is low when the 64 ms delay expires, PURX is released and SLEEPX control
goes to MAD. If PWRONX is not low when 64 ms expires, PURX will not be released, and
CCONT will go to power off ( digital section will send power off signal to analog parts)
.
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SLEEPX
PURX
CCPURX
PWRONX
VR1,VR6
VBB (2.8V)
Vchar
123
1: Power switch pressed ==> Digital voltages on in CCONT (VBB).
2: CCONT digital reset released. VCXO turned on.
3: 62 ms delay to see if power switch is still pressed.
Po wer Up by RTC
RTC ( internal in CCONT) can power the phone up by changing RTCPwr to logical ”1”.
RTCPwr is an internal signal from the CCONT digital section.
Po wer Up by IBI
IBI can power CCONT up by sending a short pulse to logical ”1”. RTCPwr is an internal
signal from the CCONT digital section.
Acting Dead
If the phone is off when the charger is connected, the phone is powered on but enters a
state called ”acting dead”. To the user the phone acts as if it was switched off. A battery
charging alert is given and/or a battery charging indication on the display is shown to
acknowledge the user that the battery is being charged.
Active Mode
In the active mode the phone is in normal operation, scanning for channels, listening to
a base station, transmitting and processing information. All the CCONT regulators are
operating. There are several substates in the active mode depending on if the phone is in
burst reception, burst transmission, if DSP is working etc.
Sleep Mode
In the sleep mode all the regulators except the baseband VBB, Vcore, and the SIM card
VSIM regulators are off. Sleep mode is activated by the MAD2WD1 after MCU and DSP
clocks have been switched off. The voltage regulators for the RF section are switched off
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and the VCXO power control, VCXOPwr is set low. In this state only the 32 kHz sleep
clock oscillator in CCONT is running. The flash memory power down input is connected to
the VCXO power control, so that the flash is deep powered down during sleep mode. During sleep mode, the phone wakes up periodically to page the base station for incoming
calls, location update, etc. The paging rate is a parameter set by the BS.
The sleep mode is exited either by the expiration of a sleep clock counter in the
MAD2WD1 or by some external interrupt, gener ated by a charger connection, key press,
headset connection, etc. The MAD2WD1 starts the wake up sequence and sets the VCXOPwr control high. After VCXO settling time other regulators and clocks are enabled for
active mode.
If the battery pack is disconnect during the sleep mode, the CCONT shall power down the
SIM in the sleep mode as there is no time to wake up the MCU.
Battery charging
The electrical specifications give the idle voltages produced by the acceptable chargers
at the DC connector input. The absolute maximum input voltage is 30V due to the transient suppressor that is protecting the charger input. At phone end there is no difference
between a plug–in charger or a desktop charger. The DC–jack pins and bottom connector
charging pads are connected together inside the phone.
MAD
MAD
VBAT
CCONTINT
CCONT
0R22
PWM_OUT
GND
ICHAR
VCHAR
LIM
VOUT
CHAPS
RSENSE
PWM
22k
VCH
GND
1n
27pf
Figure 9: Battery Charging
TRANSCEIVER
33R/100MHz
1u
47k
47k
30V
1.5A
EMI
VIN
CHRG_CTRL
L_GND
CHARGER
NOT IN
ACP–7/8
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Startup Charging
When a charger is connected, the CHAPS is supplying a startup current minimum of
130mA to the phone. The startup current provides initial charging to a phone with an
empty battery. Startup circuit charges the battery until the battery voltage level reaches
3.0V (+/– 0.1V) and the CCONT releases the PURX reset signal and program execution
starts. Charging mode is changed from startup charging to PWM charging that is controlled by the MCU software. If the battery voltage reaches 3.55V (3.75V maximum)
before the program has taken control over the charging, the startup current is switched
off. The startup current is switched on again when the battery voltage is sunken
100mV (nominal).
Output overvoltage protection is used to protect phone from damage. This function is
also used to define the protection cutoff voltage for different battery types (Li or Ni). The
power switch is immediately turned OFF if th e voltage in VOUT rises above the selected
limit VLIM1 or VLIM2.
Table 7: Battery O v ervoltage Protection
ParameterSymbol
Output voltage cutoff limit (during
transmission or Li-battery)
Output voltage cutoff limit (no
transmission or Ni-battery)F
Vstarthys80100200mV
Istart130165200mA
LIM
input
VLIM1LOW4.44.64.8V
VLIM2HIGH4.85.05.2V
MinTypMaxUnit
The voltage limit (VLIM1 or VLIM2) is selected by logic LOW or logic HIGH on the CHAPS
(N101) LIM– input pin. Default value is lower limit VLIM1.
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When the switch in output overvoltage situation has once turned OFF, it stays OFF until
the the battery voltage falls below VLIM1 (or VLIM2) and PWM = LOW is detected. The
switch can be turned on again by setting PWM = HIGH.
VCH
VCH<VOUT
t
VOUT
VLIM1 or VLIM2
t
SWITCH
PWM (32Hz)
ONOFF
Battery Removal During Cha r g i n g
Output overvoltage protection is also needed in case the main battery is removed when
charger connected or charger is connected before the battery is connected to the phone.
With a charger connected, if VOUT exceeds VLIM1 (or VLIM2), CHAPS turns switch OFF
until the charger input has sunken below Vpor (nominal 3.0V, maximum 3.4V). MCU software will stop the charging (turn off PWM) when it detects that battery has been
removed. The CHAPS remains in protection state as long as PWM stays HIGH after the
output overvoltage situation has occurred.
age)
2VOUT exceeds limit VLIM(X), switch is turned immediately OFF
3VOUT falls (because no battery), also VCH<Vpor (standard chargers full–rectified
output). When VCH > Vpor and VOUT < VLIM(X) –> switch turned on again (also
PWM is still HIGH) and VOUT again exceeds VLIM(X).
4Software sets PWM = LOW –> CHAPS does not enter PWM mode
5PWM low –> Startup mode, startup current flows until Vstart limit reached
6VOUT exceeds limit Vstart, Istart is turned off
7VCH falls below Vpor
Different PWM Frequencies (1Hz and 32 Hz)
When a travel charger (2–wire charger ) is used, the power switch is turned ON and OFF
by the PWM input when the PWM rate is 1Hz. When PWM is HIGH, the switch is ON and
the output current Iout = charger current – CHAPS supply current. When PWM is LOW,
the switch is OFF and the output current Iout = 0. To prevent the switching transients
inducing noise in audio circuitry of the phone soft switching is used.
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The performance travel charger (3– wire charger) is controlled with PWM at a frequency
of 32Hz. When the PWM rate is 32Hz CHAPS keeps the power switch continuously in the
ON state.
SWITCH
PWM (1Hz)
SWITCH
PWM (32Hz)
Battery Identification
Different battery types are identified by a pulldown resistor inside the battery pack. The
BSI line inside transceiver has a 100k pullup to VBB.
The MCU can identify the battery by reading the BSI line DC–voltage level with a CCONT
(N100) A/D–converter.
ONONONOFFOFF
ON
BVOLT
BATTERY
BTEMP
BSI
R
s
BGND
Figure 10: Battery Identification
Vbb
Vibra Schematic
100k
10k
10n
BSI
SIMCardDetX
TRANSCEIVER
CCONT
MAD
The battery identification line is used also for battery removal detection. The BSI line is
connected to a SIMCardDetX line of MAD2 (D300). SIMCardDetX is a threshold detector
with a nominal input switching level 0.85xVcc for a rising edge and 0.55xVcc for a falling
edge. The battery removal detection is used as a trigger to power down the SIM card
before the power is lost. The BSI contact in the battery pack is made 0.7mm shorter than
the supply voltage contacts so that there is a delay between battery removal detection
Page 28Nokia Mobile Phones Ltd.Issue 1 03/01
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and supply power off.
Vcc
0.850.05 Vcc
0.550.05 Vcc
SIMCARDDETX
S
GND
IGOUT
Battery Temperature
The battery temperature is measured with a NTC inside the battery pack. The BTEMP line
inside transceiver has a 100k pullup to VREF. The MCU can calculate the battery temperature by reading the BTEMP line DC–voltage level with a CCONT (N100) A/D–converter.
BVOLT
BATTERY
NTC
Supply Voltage Regulators
The heart of the power distrubution is the CCONT. It includes all the voltage regulators
and feeds the power to the whole system. The baseband digital parts are powered from
the VBB regulator which provides 2.8V baseband supply. The baseband regulator is active
always when the phone is powered on. The VBB baseband regulator feeds M AD and
memories, COBBA digital parts and the LCD driv er in the UI section. There is a separate
regulator for a SIM card. The regulator is selectable between 3V and 5V and controlled by
the SIMPwr line from MAD to CCONT. The COBBA analog parts are powered from a dedicated 2.8V supply VCOBBA. The CCONT also supplies 5V for RF. The CC ONT contains a real
time clock function, which is powered from a RTC backup when the main battery is disconnected.
TRANSCEIVER
BSI
BTEMP
R
T
BGND
1k
VREF
100k
2k2
10k
10n
BTEMP
VibraPWM
MCUGenIO4
CCONT
MAD
Figure 11: Battery Temperature
The RTC backup is rechargable polyacene battery, which has a capacity of 50uAh (@3V/
2V) The battery is charged from the main battery v o ltage by the CHAPS when the main
battery voltage is over 3.2V. The charging current is 200uA (nominal).
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Table 8: Regulator States for Different Modes of Oper atio n
Operating modeVrefRF REGVCOBBAVBBVSIMSIMIF
Pow er o ff
Pow er o n
Reset
Sleep
Off
On
On
Off
Note: CCONT includes five additional 2.8V regulators providing power to the RF section. These regulators can be controlled either by the direct control signals from MAD or by the RF r egulator control
register in CCONT which MAD can update. Below are the listed the MAD control lines and the regulators they control:
- TxPwr controls VTX regulator (VR7)
- RxPwr controls VRX regulators (VR2 and VR5)
- SynthPwr controls VSYN_1 and VSYN_2 regulators (VR1_SW and VR4)
VCXOPwr controls VXO regulator (VR1)
OffOffOffOffPull down
On/OffOnOnOnOn/off
Off
VR1 On
OffOffOnOnOn/off
OnOnOnPull down
CCONT generates also a 1.5 V reference voltage VREF to COBBA, SUMMA, and CRFU. The
VREF voltage is also used as a reference to some of the CCONT A/D converters.
In addition to the above-mentioned signals, MAD includes TXP control signal, which goes
to SUMMA power control block and to the power amplifier. The transmitter power control TXC is led from COBBA to SUMMA.
Audio Control
The audio control and processing is handled by the COBBA–GJP, which contains the
audio and RF codecs, and the MAD2, which contains the MCU, ASIC, and DSP blocks
handling and processing the audio signals.
Page 30Nokia Mobile Phones Ltd.Issue 1 03/01
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