Nokia 7190 Service Manual 4SysMod

Programmes After Market Services
NSB-5 Series Transceivers

System Module

Issue 1 03/01 Nokia Mobile Phones Ltd.
NSB-5
System Module PAMS Technical Documentation
Page 2 Nokia Mobile Phones Ltd. Issue 1 03/01
PAMS Technical Documentation System Module
Contents
Page No
System Connector ........................................................................................................ 7
DC Connector ............................................................................................................. 9
Slide Microphone ........................................................................................................ 9
Slide Connector ...........................................................................................................9
Roller Interface ........................................................................................................... 9
Keys and Keymatrix ................................................................................................... 9
Headset Connector ...................................................................................................... 9
Battery Connector ......................................................................................................15
Vibra Alerting Device............................................................................................. 16
SIM Card Connector ..................................................................................................16
Infrared Transceiver Module .................................................................................... 17
Real Time Clock ....................................................................................................... 18
Baseband Module....................................................................................................... 18
Technical Summary .................................................................................................. 18
Power Distribution .................................................................................................... 20
Power Up .................................................................................................................. 22
Power up with a charger.......................................................................................... 22
Power Up With the Power Switch (PWRONX)...................................................... 22
Power Up by RTC....................................................................................................23
Power Up by IBI ..................................................................................................... 23
Acting Dead............................................................................................................. 23
Active Mode............................................................................................................ 23
Sleep Mode.............................................................................................................. 23
Battery charging...................................................................................................... 24
Startup Charging ..................................................................................................... 25
Battery Overvoltage Protection.............................................................................. 25
Battery Removal During Charging ......................................................................... 26
Different PWM Frequencies (1Hz and 32 Hz)........................................................ 27
Battery Identification............................................................................................... 28
Battery Temperature................................................................................................ 29
Supply Voltage Regulators...................................................................................... 29
Audio Control ........................................................................................................... 30
Internal Microphone and Earpiece......................................................................... 31
External Audio Connections .................................................................................. 32
Analog Audio Accessory Detection....................................................................... 32
Internal Audio Connections ................................................................................... 33
4–wire PCM Serial Interface................................................................................... 33
Speech Processing.................................................................................................. 34
Alert Signal Generation........................................................................................... 34
Digital Control ...........................................................................................................34
MAD2WD1............................................................................................................. 34
MAD2PR1 pinout .................................................................................................. 35
Memories .................................................................................................................. 46
Program Memory 32MBit Flash............................................................................. 47
SRAM Memory...................................................................................................... 47
EEPROM Emulated in FLASH Memory............................................................... 47
MCU Memory Requirements ................................................................................... 47
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Flash Programming ................................................................................................... 47
IBI Accessories ......................................................................................................... 48
Phone Power–on by IBI ......................................................................................... 48
IBI power–on by phone.......................................................................................... 49
RF Module.................................................................................................................. 50
RF Frequency Plan ................................................................................................... 50
DC Characteristics ................................................................................................... 50
Power Distribution Diagram ..................................................................................... 50
Control Signals ...................................................................................................... 53
Regulator Specifications ........................................................................................... 53
Functional Description ............................................................................................. 54
RF Block Diagram .................................................................................................... 54
Receiver .................................................................................................................... 55
Transmitter ................................................................................................................ 56
Power Detection Circuit ........................................................................................... 57
Frequency Synthesizers ............................................................................................ 60
AGC .......................................................................................................................... 61
AFC ........................................................................................................................... 62
Software Compensations .......................................................................................... 62
Power Levels (TXC) vs. Channel .......................................................................... 62
Modulator Output Level ........................................................................................... 62
Power Levels vs temperature .................................................................................... 62
RSSI .......................................................................................................................... 62
TX power range ........................................................................................................ 62
PA select function ..................................................................................................... 63
RF Block Specifications............................................................................................ 63
GSM1900 Duplex Filter ........................................................................................... 64
Receiver Blocks ......................................................................................................... 65
LNA in CRFU_2a ..................................................................................................... 65
GSM1900 Receive Interstage Filter ......................................................................... 65
First Mixer (UHF) in CRFU_2a ............................................................................... 66
First IF Filter.............................................................................................................. 67
Second Mixer (VHF) in CRFU_2a ........................................................................... 67
Second IF Filter ........................................................................................................ 68
AGC and Third Mixer in SUMMA .......................................................................... 69
Third IF Filter ........................................................................................................... 70
Third IF Buffer in SUMMA ..................................................................................... 70
Transmitter Block..................................................................................................... 70
IQ Modulator and TX AGC in SUMMA ................................................................. 70
Upconversion Mixer and Buffer in CRFU_2a .......................................................... 72
GSM1900 TX SAW Filter ........................................................................................ 73
TX Buffer............................................................................................................... 73
GSM1900 TX Ceramic Filter................................................................................. 73
Power Amplifier MMIC ............................................................................................74
Directional Coupler................................................................................................ 76
Power Detector ......................................................................................................... 76
Power Control Section in SUMMA, Closed Loop Characteristics .......................... 76
Synthesizer Blocks .................................................................................................... 77
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VC(TC)XO, Reference Oscillator.......................................................................... 77
VHF PLL in SUMMA .............................................................................................. 78
VHF VCO and Lowpass Filter............................................................................... 79
UHF PLL .................................................................................................................. 80
GSM1900 UHF VCO module .................................................................................. 81
UHF LO signal into CRFU_2a ................................................................................. 82
Data Interface and Timing .........................................................................................83
Synthesizer Timing Control ...................................................................................... 84
Transmit Power Timing ............................................................................................ 86
Interfacing ................................................................................................................. 86
User Interface............................................................................................................. 87
LEDs ......................................................................................................................... 87
Plastic Window ......................................................................................................... 88
Dust Seal ................................................................................................................... 88
LCD Adhesive .......................................................................................................... 88
Reflector ................................................................................................................... 88
Connector .................................................................................................................. 88
Light Guide ............................................................................................................... 88
UI Module Connection to Main PCB ....................................................................... 90
Parts Lists .................................................................................................................. 92
System Module (0201192) ...................................................................................... 92
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List of Figures
Page No
Figure 1: System Connector - module .......................................................................7
Figure 2: System Connector - detailed ..................................................................... 8
Figure 3: Combined headset, system connector audio signals ............................... 15
Figure 4: Battery connector locations .................................................................... 16
Figure 5: SIM Card Reader Ultra phone .................................................................16
Figure 6: IR tramsmission frame - example ........................................................... 18
Figure 7: Block Diagram .........................................................................................19
Figure 8: Baseband power distribution .................................................................. 20
Figure 9: Battery Charging ......................................................................................24
Figure 10: Battery Identification ............................................................................ 28
Figure 11: Battery Temperature ............................................................................. 29
Figure 12: Audio Control ....................................................................................... 31
Figure 13: Combined headset and system connector audio signal ......................... 32
Figure 14: IBI power on ..........................................................................................49
Figure 15: RF frequency plan ................................................................................. 50
Figure 16: RF power distribution: maximum currents ........................................... 51
Figure 17: RF power distribution: typical currents ................................................ 52
FIGURE 18: Power Control Loop ......................................................................... 60
FIGURE 19: Phase Control Loop .......................................................................... 61
Figure 20: UI module assembled ........................................................................... 87
Figure 21: Mounting of LEDs for backlight (seen from underside) ...................... 88
Figure 22: Light guide ............................................................................................ 89
Figure 23: Marking specification for the light guide ............................................. 89
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System Connector

This section describes the elect rical connection and interface levels between the base­band, RF and UI parts. The electrical interface specifications are collected into tables that cover a connector or a defined int erface.
The system connector includes the following parts: – DC connector for external plug–in charger and a desktop charger – System connector for accessories and intelligent battery packs The System connector is used to connect the transceiver to accessories. System connector pins can be used to connect intelligent battery packs to the trans-
ceiver.
Contact 1
DC–jack
2,3,4
Contact 5
2
3
Slide Detect
4
Contacts
8...13
6
7
8
13
Contact 14
Figure 1: System connector module
Solderable element,
14
Cable/Cradle connector guiding/fixing hole, 2 pcs
2 pcs
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IBI connector
(6 pads)
B side view
14
8
Fixing pads (2 pcs)
1
7
PCB
DC Jack
Microphone
acoustic ports BB
Bottom
connector (6 pads)
A
B
Charger pads (3 pcs)
A side view
Cable locking holes (3 pcs)
Figure 2: System Connector - detailed
Table 1: System connector signals
Pin Name Function Description
1 V_IN Bottom charger contacts Charging voltage 2 L_GND DC Jack Logic and charging ground 3 V_IN DC Jack Charging voltage 4CHRG_CTRLDC Jack Charger control
5CHRG_CTRLBottom charger contacts Charger control
6 MIC-P Slide Detect Holder Slide Detect 7 MIC-N Slide Detect Holder Gnd 8 XMIC Bottom & IBI connectors Analog audio input
9 SGND Bottom & IBI connectors Audio signal ground 10 XEAR Bottom & IBI connectors Analog audio output 11 MBUS Bottom & IBI connectors Bidirectional serial bus 12 FBUS_RX Bottom & IBI connectors Serial data in 13 FBUS_TX Bottom & IBI connectors Serial data out 14 L_GND Bottom charger contacts Logic and charging ground
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DC Connector

The electrical specifications in Table 3 shows the idle voltage produced by the acceptable chargers at the DC connector input. The absolute maximum input voltage is 18V due to the transient suppressor that is protecting the charger input.

Slide Microphone

The microphone is connected to the slide by means of springs it has a microphone input level specified in Table 2. The microphone requires bias current to operate which is gen­erated by the COBBA_GJP ASIC.

Slide Connector

An Interrupt signal to MAD2WD1 determines whether the slide is in an open or closed position.

Roller Interface

A mechanical solution is implemented and thre e interrupts are fed to the MAD2WD1.

Keys and Keymatrix

0–9, *, #, send, end, soft_1, soft_2, power_on_off, rolle r_push,

Headset Connector

The external headset device is connected to the system connector, from which the sig­nals are routed to COBBA_GJP microphone inputs and earphone outputs.
NA MICN mounted in
slide
NA MICP mounted in
slide
Table 2: Mic signals of the system connector
0 2 12.5 mV Connected to COBBA_GJP MIC2N input. The
maximum value corresponds to 1 kHz, 0 dBmO network level with input amplifier gain set to 32 dB, typical value is maximum value - 16 dB.
0 2 12.5 mV Connected to COBBA_GJP MIC2P input. The
maximum value corresponds to 1 kHz, 0 dBmO network level with input amplifier gain set to 32 dB, typical value is maximum value - 16 dB.
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Table 3: System/IBI connector
IB-
Pin
NAME Function Min Typ Max Unit Description
pin
10 Yes XEAR Analog
audio out­put (from phone to accessory)
Accessory detection (from accessory to phone)
16
4.7
0
47
10
10
1.0
100
0.5
6.8
300
0.2
V
Output AC impedance (ref GND) resistor tol. is 5%
uF
Series output capacitance Load AC impedance to GND: Head-
set Load AC impedance to SGND:
k
External accessory Max. output level. No load
p-p
Resistance to accessory ground (in
k
accessory)
V
DC voltage (ref. SNGD). External accessory
Load DC resistance to SGND. Exter-
k
nal accessory DC voltage (ref SGND). Headset
V
with closed switch
16
2.8
47
1500
Load DC resistance to SNGD. Head-
set with closed switch DC voltage (ref SGND). No acces-
V
sory or headset with open switch Pull-up resistor to VBB in phone
k
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Table 3: System/IBI connector
IB-
Pin
NAME Function Min Typ Max Unit Description
pin
8 Yes XMIC Analog
audio input (from accessory to phone)
Headset micro­phone input (from accessory to phone)
Accessory mute. Volt­age com­pared to SGND. (from phone to accessory)
Headset detection (from accessory to phone) (NO TAG)
2.0 100
2.0
2.5
100
2.5
0
1.6 2.0
1.47
0
49
2.2
1
2.2
600 200
2.9
1.55
2.4
2.9
1.33VV
k
V k
k µA mV
p-p
V V V
k
Input AC impedance Accessory source AC impedance Maximum signal level
p-p
Input AC impedance Headset source AC impedance Bias current Maximum signal level
Not muted Muted, without headset Comparator reference in accessory
No headset (ref SGND) Headset connected (ref SGND) Pull-up resistor to VBB in phone
Function DLR-3 Datacable Detection
9 Yes SGND Audio sig-
nal ground. Separated from phone GND (from phone to accessory)
440 733 mV DLR-3 detected (ref SGND)
Output AC impedance (ref GND) Series output capacitance Resistance to phone ground (DC)
(in phone) Resistance to accessory ground (in
accessory) DC voltage compared to phone
GND DC voltage compared to accessory
GND
-0.2
-5
47 10 380
100
+0.2
+5
Ω µF
k
V
V
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Table 3: System/IBI connector
IB-
Pin
NAME Function Min Typ Max Unit Description
pin
13 Yes FBUS_TXSerial data
out (from phone to accessory)
12 Yes FBUS_RXSerial data
in (from accessory to phone)
0.1
1.7
0
2.0
47 220 47
220 47
0.8
2.8
100
150 1
0.8
2.8
V
V
k k
pF µs V V k k
Output low voltage @ I GND)
Output high voltage @ I (ref GND)
Pull-up resistor in phone Pull-down resistor in accessory Serial (EMI filtering) resistor in
phone Cable capacitance Rise/fall time
Input low voltage (ref GND) Input high voltage (ref GND) Pull-down resistor in phone Pull-up resistor in accessory
<mA (ref
OL
<4mA
OH
2.2
150 2 1
k
pF
µs µs
Serial (EMI filtering) resistor in accessory
Cable capacitance Rise/fall time @ 115kbits/s Rise/fall time @ 230kbits/s
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Table 3: System/IBI connector
IB-
Pin
NAME Function Min Typ Max Unit Description
pin
11 Yes MBUS
FLASH_ CLK
2,
- L_GND Logic and
14
Bidirec­tional serial bus
charging ground (separated from phone GND by EMI compo­nents)
0
2.0
0
0.8
2.8
0.8
V V V
Input low voltage (ref GND) Input high voltage (ref GND) Output low voltage @ I
(ref GND)
2.1
2.9
V
Output high voltage @ I µA (ref GND)
4.7 220 100
k k
Pull-up resistor in phone Pull-down resistor in accessory Serial (EMI filtering) resistor in
phone
200 5
pF µs
Cable capacitance Rise/fall time @ 9600 bits/s
0 1.0 A Ground current
<4mA
OL
OH
<100
4,5 - CHRG_
CTRL
Charger control (from phone to accessory)
0
1.7
1
32
20
30
0.8
2.9 37 99
V V Hz % k
k
Output low voltage @ I
Output high voltage @ I
<20 µA
OL
<20 µA
OH
PWM frequency PWM duty cycle Serial (EMI filtering) resistor in
phone Pull-down resistor in phone
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Table 3: System/IBI connector
IB-
Pin
NAME Function Min Typ Max Unit Description
pin
1,3 - VIN Fast
charger (from accessory to phone)
Slow charger (from accessory to phone)00
0 0
8.5
0.85 100
100
100
200
15
V A mV
p-p
mV
p-p
mV
p-p
mV p-p
V
peak
Charging voltage Charging current Ripple voltage @ f = 20...200Hz,
load = 3 & 10 Ripple voltage @ 4 = 0.2...30kHz,
load = 3 & 10 Ripple voltage @ f > 30kHz, load =
3 & 10 Total ripple voltage @ f > 20Hz,
load = 3 & 10 Charging voltage (max . =
unloaded, +20% overvoltage in mains)
1.0
A
Charging current (max. = shorted,
peak
+20% overvoltage in mains)
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Baseband
HOOKDET
MAD
HEADDET
CCONT
EAD
HF
COBBA –GJP
AUX OUT
PD2
AGND
10m
10k
100n
AGND
10u
27p
100n
1u
220k
220k
VBB VBB
2k2 47k
2k2
VBB
47k
100MHz
33R
AGND
47R
XEAR
LGND
PC–Board
R01
SW01
+
+
+
C01
C03
C02
HFCM
MIC1N
MIC1P
MIC3N
MIC3P
AGND
Note 1: Grey resistor are in the border of ”EMI clean” and ”dirty” areas. Note 2: AGND is connected directly to the GND on PCB close to HF parts. Note 3: ESD protection diodes are not shown.

Battery Connector

The BSI contact on the battery co nnector is used to detect when thebattery is removed with power switched on enabling the SIM card operation to shut down first. The BSI con­tact in the battery pack should be shorter than the supply power contacts to give enough time for the SIM shut down.
AGND
27p
2k2
27p
100n
100n
100n
100n
AGND AGND AGND
2k2
100R
100R
330R
XMIC
SGND
R01= 100R C01=33uF C02=1000pF C03=22pF L01=MMZ2012Y6 01BT/TDK
Figure 3: Combined headset, system connector audio signals
L01
Z01
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No metal in these areas! old connector type
12
B side view.
phone
1+VBATT 2BSI 3BTEMP 4-VBATT
34
Vibra Alerting Device
A special battery pack contains a vibra motor. The vibra is controlled with one PWM sig­nal by the MAD2WD1 via the BTEMP battery terminal.
Figure 4: Battery connector locations

SIM Card Connector

The SIM card connector is located on the PCB. Only small SIM cards are supported.
321
456
Figure 5: SIM Card Reader Ultra phone
Table 4: SIM Connector Electrical Specifications
Pin Name Parameter Min Typ Max Unit Notes
1GND GND 0 0 V Ground
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Table 4: SIM Connector Electrical Specifications
Pin Name Parameter Min Typ Max Unit Notes
2 VSIM 5V SIM Card
3V SIM Card
3DATA5V Vin/Vout
3V Vin/Vo ut
4 SIMRST 5V SIM Card
3V SIM Card
5SIMCLK Frequency
Trise/Tfall
6 VPP 5V SIM Card
3V SIM Card
VSIM supply voltages are specified to meet type approval requirements regardless of the tolerances in components.

Infrared Transceiver Module

An infrared transceiver module is designed as a substitute for hardwired connections between the phone and a PC. The infrared transceiver module is a stand alone compo­nent. In DCT3 the module is located inside and at the top of the phone.
4.8
2.8
4.0 0
2.8 0
4.0
2.8
4.8
2.8
5.0
3.0 “1”
“0” “1” “0”
“1” “1”
3.25
5.0
3.0
5.2
3.2
VSIM
0.5
VSIM
0.5
VSIM VSIM
25
5.2
3.2
V Supply voltage
V SIM data
Trise/Tfall max 1 us
V SIM reset
MHz
ns
V Programming voltage
SIM clock
pin6 and pin2 tied
together
The Rx and Tx is connected to the FBUS via a dual bus buffer. The module and buffer is activated from the MAD2 with a pull up on IRON. The Accif in MAD2 performs pulse encoding and shaping for transmitted data pulses and detection and decoding for received data pulses.
The data is transferred over the IR link using serial FBUS data at speeds 9.6, 19.2, 38.4,
57.6 or 115.2 kbits/s, which leads to maximum throughput of 92.160 kbits/s. The used IR module complies with the IrDA SIR specification (Infra Red Data Association), which is based on the HP SIR (Hewlett–Packard‘s Serial Infra Red) concept.
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The following figure gives an example of IR transmission pulses. In IR transmission, a light pulse corresponds to 0–bit and a ”dark pulse” corresponds to 1–bit.
constant pulse
IR TX
UART TX
startbit stopbit
The FBUS cannot be used for external accessory communication, when the infrared mode is selected. Infrared communication reserves the FBUS completely.

Real Time Clock

Requirements for a real time clock implementation are a basic clock (hours and minutes), a calender and a timer with alarm and power on/off –function and miscellaneous calls. The RTC will contain only the time base and the alarm timer but all other functions (e.g. calendar) will be implemented with the MCU software. The RTC needs a power backup to keep the clock running when the phone battery is disconnected. The backup power is supplied from a rechargable polyacene battery that can keep the clock running for approximately ten minutes. If the backup has expired, the RTC clock restarts after the main battery is connected. The CCONT resets the MCU in approx 62ms and the 32kHz source is settled (after approx. 1s).
The CCONT is an ideal place for an integrated real time clock as the asic already contains the power up/down functions and a sleep control with the 32kHz sleep clock, which is always running when the phone battery is connected. This sleep clock is used for a time source to a RTC block.
1
0100110
Figure 6: IR tramsmission frame - example

Baseband Module

Technical Summary

The baseband architecture is basically similar to DCT3 GSM phones. DCT3.5 differs from DCT3 in the single PCB concept and the serial interface between MAD2WD1 and COBBA_GJP and MAD2WD1 and CCONT. In DCT3.5 the MCU, the system-specific ASIC and the DSP are intergrated into one ASIC, called the MAD2WD1 chip, which takes care of all the signal processing and operation controlling tasks of the phone.
The baseband architecture supports a power saving function called ”sleep mode”. This sleep mode shuts off the VCTCXO, which is used as system clock source for both RF and baseband. During the sleep mode the system runs from a 32 kHz crystal. The phone is wakened up by a timer running from this 32 kHz clock supply. The sleeping time is deter-
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mined by some network parameters. When the sleep mode is entered both the MCU and the DSP are in standby mode and the normal VCTCXO clock has been switched off.
The battery voltage range in DCT3 family is 3.0V to 4.5V depending on the battery charge and used cell type (Li–Ion or NiMH). Because of the lower battery voltage the baseband supply voltage is lowered to a nominal of 2.8V.
The baseband is running from a 2.8V power rail which is supplied by a power controlling asic (CCONT). In the CCONT there are seven individually controlled regulator outputs for the RF section, one 2.8V output for the baseband plus a core voltage for MAD2WD1. However this is not used in NSB–5 because the chipset support s 2.8 Volts. In addition there is one +5V power supply output(V5V). TheCCONTalso contains a SIM interface which supports both 3V and 5V SIM cards. A real time clock function is integrated into the CCONT which utilizes the same 32KHz clock supply as the sleep clock. A backup power supply is provided for the RTC, which keeps the real time clock running when the main battery is removed. The backup power supply is a rechargeable polyacene battery with a backup time of ten minutes.
The interface between the baseband and the RF section is handled by a specific asic. The COBBA_GJP asic provides A/D and D/A conversion of the in–phase and quadrature receive and transmit signal paths and also A/D and D/A conversions of received and transmitted audio signals to and from the UI parts. Data transmission between the COBBA_GJP and the MAD2WD1 is implemented using serial connections. Digital speech processing is handled by the MAD2WD1 asic. The COBBA_GJP asic is a dual supply volt­age circuit, the digital parts are running from the baseband supply VBB and the analog parts are running from the analog supply VCOBBA (VR6).
LCD
vibra motor
IR
roller
TX/RX SIGNALS
COBBA SUPPLY
COBBA_GJP
MAD2WD1 +
MEMORIES
RF SUPPLIES
CCONT
BB SUPPLY
core voltage
CHAPS
PA SUPPLY
SIM
32kHz CLK
SLEEP CLOCK
VBAT
13MHz CLK
SYSTEM CLOCK
BATTERY NiMH LiIon
AUDIOLINES
BASEBAND
SYSCON
Figure 7: Block Diagram
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Power Distribution

In normal operation the baseband is powered from th e phone‘s battery. The battery con­sists of one Lithium–Ion cell. There is also a possibility to use batteries consisting of three Nickel Metal Hydride cells or one solid state cell. An external charger can be used for recharging the battery and supplying power to the phone. The charger can be either so called fast charger, which can deliver supply current up to 1600 mA or a standard charger that can deliver approx 300 mA.
The CCONT provides voltage to th e circuitry excluding the RF PA, LCD, and IrDa, which are supplied via a continuous power rail direct from the battery. The RF PA module has a cutoff voltage of 3.1V. The batter y(see note) feeds power directly to several parts of the system: CCONT, PA, and UI circuitry (display lights, buzzer). The four dedicated control lines, RxPwr, TxPwr, SIMCardPwr, and SynthPwr from MAD2 to CCONT have changed to a serial control signal between MAD2WD1 and CCONT. Figure 8 shows a simplified block diagram of the power distribution.
Note : In battery terms there is VBATT and VB, the difference is a filter (coil and capacitors).
The power management circuitry provides protection against overvoltages, charger fail­ures, and pirate chargers, etc., that could cause damage to the phone.
PA SUPPLY
VCOBBA
COBBA_GJP
LCD MODULE
VBAT
VBB
MAD2WD1
+
MEMORIES
BASEBAND
RF SUPPLIES
CCONT
PWRONX
CNTVR
VBB
core volta ge
PURX
POWER MGMT
VIN
VSIM
VBAT
PWM
SIM
RTC
BACKUP
BATTERY
sram
CONNECTOR
Figure 8: Baseband power distribution
The heart of the power distribution is the CCONT. It includes all the voltage regulators and feeds the power to most of the system. The whol e baseband is powered from the same regulator which provides 2.8V baseband supply VBB. The baseband regulator is active always when the phone is powered on. The core baseband regulator feeds, amongst others, MAD2WD1 and memories, COBBA_GJP digital parts and the LCD driver in the UI section. COBBA_GJP analog parts are powered from a dedicated 2.8V supply
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VCOBBA by the CCONT. There is a separate regulator for a SIM card which is selectable between 3V and 5V and controlled by the SIMPwr line from MAD2WD1 to CCONT.
The CCONT contains a real time clock function, which is powered from a RTC backup when the main battery is disconnected. The RTC backup is rechargable polyacene battery.
CCONT includes also six additional 2.8V regulators providing power to the RF section. These regulators can be controlled by the seriel interface from MAD2WD1; i.e., RF regu­lator control register in CCONT which MAD2WD1 can update.
CCONT supplies a core voltage to the MAD2WD1. The core voltage is by default 1.975V, but can be set lower, depending on the MAD2 silicon technology.
RAM_BCK is not used. CCONT generates also a 1.5 V reference voltage VREF to COBBA_GJP, SUMMA. The VREF
voltage is also used as a reference to some of the CCONT A/D converters and as a refer­ence for al the other regulators.
In addition to the above-mentioned signals, MAD2WD1 includes also TXP control signal which goes to SUMMA power control block and to the power amplifier. The transmitter power control TXC is led from COBBA_GJP to SUMMA.
Table 5: CCONT current output capability/nominal voltage
Regulator
VR1 25 mA 2.8 V VCTCXO VR2 25 mA 2.8 V CRFU Rx
VR3/switch 50 mA 2.8 V PLL VSYN
VR4 90 mA 2.8 V VCO VSYN VR5 80 mA 2.8 V SUMMA Rx VR6 100 mA 2.8 V COBBA_GJP VR7 150 mA 2.8 V SUMMA+CRFU Tx
VBB ON
VBB SLEEP
VSIM 30 mA 3.0/
Maximum
current
125
1
Unit Vout Unit Notes
mA mA
2.8
2.8
5.0
V V
V V
current limit 250mA
current limit 5mA
VSIM
outout voltage selectable
V_core 50 mA 1.975 V programmable core supply for CPU/
DSP/SYS ASIC dV=225V
V_RAM_bck/VR3 50 mA 2.8 V n ormal mode 2.8V. 2.0V for data
retention. (not used)
VSIM must fulfill the GSM11.10 current spike requirements.
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VSIM and V5V can give a total of 30 mA.

Power Up

The baseband is powered up by:
1 Pressing the power key, that generates a PWRONX interrupt signal from the
power key to the CCONT, which starts the power up procedure.
2 Connecting a charger to the phone. The CCONT recognizes the charger from the
VCHAR voltage and starts the power up procedure.
3 A RTC interrupt. If the real time clock is set to alarm and the phone is switched
off, the RTC generates an interrupt signal, when the alarm is gone off. The RTC interrupt signal is con-nected to the PWRONX line to give a power on signal to the CCONT just like the power key.
4 A battery interrupt. Intelligent battery packs have a possibility to power up the
phone. When the battery gives a short (10ms) voltage pulse through the BTEMP pin, the CCONT wakes up and starts the power on procedure.
Power up with a charger
When the charger is connected, CCONT will switch on the CCONT digital voltage as soon as the battery voltage exeeds 3.0V. The reset for CCONT’s digital parts is released when the operating voltage is stabilized ( 50 us from switching on the voltages). Operating voltage for VCXO is also switched on. The counter in CCONT digital section will keep MAD in reset for 62 ms (PURX) to make sure that the clock provided by VCXO is stable. After this delay, MAD reset is released, and VCXO–control (SLEEPX) is given to MAD. The diagram assumes empty battery, but the situation would be the same with full battery:
When the phone is powered up with an empty batter y pack using the standard charger, the charger may not supply enough current for standard power-up procedure and the powerup must be delayed.
Power Up With the Power Switch (PWRONX)
When the power on switch is pressed the PWRONX signal will go low. CCONT will switch on the CCONT digital section and VCXO as was the case with the charger-driven power up. If PWRONX is low when the 64 ms delay expires, PURX is released and SLEEPX control goes to MAD. If PWRONX is not low when 64 ms expires, PURX will not be released, and CCONT will go to power off ( digital section will send power off signal to analog parts)
.
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SLEEPX
PURX
CCPURX
PWRONX
VR1,VR6 VBB (2.8V)
Vchar
12 3
1: Power switch pressed ==> Digital voltages on in CCONT (VBB). 2: CCONT digital reset released. VCXO turned on. 3: 62 ms delay to see if power switch is still pressed.
Po wer Up by RTC
RTC ( internal in CCONT) can power the phone up by changing RTCPwr to logical ”1”. RTCPwr is an internal signal from the CCONT digital section.
Po wer Up by IBI
IBI can power CCONT up by sending a short pulse to logical ”1”. RTCPwr is an internal signal from the CCONT digital section.
Acting Dead
If the phone is off when the charger is connected, the phone is powered on but enters a state called ”acting dead”. To the user the phone acts as if it was switched off. A battery charging alert is given and/or a battery charging indication on the display is shown to acknowledge the user that the battery is being charged.
Active Mode
In the active mode the phone is in normal operation, scanning for channels, listening to a base station, transmitting and processing information. All the CCONT regulators are operating. There are several substates in the active mode depending on if the phone is in burst reception, burst transmission, if DSP is working etc.
Sleep Mode
In the sleep mode all the regulators except the baseband VBB, Vcore, and the SIM card VSIM regulators are off. Sleep mode is activated by the MAD2WD1 after MCU and DSP clocks have been switched off. The voltage regulators for the RF section are switched off
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and the VCXO power control, VCXOPwr is set low. In this state only the 32 kHz sleep clock oscillator in CCONT is running. The flash memory power down input is connected to the VCXO power control, so that the flash is deep powered down during sleep mode. Dur­ing sleep mode, the phone wakes up periodically to page the base station for incoming calls, location update, etc. The paging rate is a parameter set by the BS.
The sleep mode is exited either by the expiration of a sleep clock counter in the MAD2WD1 or by some external interrupt, gener ated by a charger connection, key press, headset connection, etc. The MAD2WD1 starts the wake up sequence and sets the VCX­OPwr control high. After VCXO settling time other regulators and clocks are enabled for active mode.
If the battery pack is disconnect during the sleep mode, the CCONT shall power down the SIM in the sleep mode as there is no time to wake up the MCU.
Battery charging
The electrical specifications give the idle voltages produced by the acceptable chargers at the DC connector input. The absolute maximum input voltage is 30V due to the tran­sient suppressor that is protecting the charger input. At phone end there is no difference between a plug–in charger or a desktop charger. The DC–jack pins and bottom connector charging pads are connected together inside the phone.
MAD
MAD
VBAT
CCONTINT
CCONT
0R22
PWM_OUT
GND
ICHAR
VCHAR
LIM VOUT
CHAPS
RSENSE
PWM
22k
VCH
GND
1n
27pf
Figure 9: Battery Charging
TRANSCEIVER
33R/100MHz
1u
47k
47k
30V
1.5A
EMI
VIN
CHRG_CTRL
L_GND
CHARGER
NOT IN ACP–7/8
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Startup Charging
When a charger is connected, the CHAPS is supplying a startup current minimum of 130mA to the phone. The startup current provides initial charging to a phone with an empty battery. Startup circuit charges the battery until the battery voltage level reaches
3.0V (+/– 0.1V) and the CCONT releases the PURX reset signal and program execution starts. Charging mode is changed from startup charging to PWM charging that is con­trolled by the MCU software. If the battery voltage reaches 3.55V (3.75V maximum) before the program has taken control over the charging, the startup current is switched off. The startup current is switched on again when the battery voltage is sunken 100mV (nominal).
Table 6: Startup Charging Parameters
Parameter Symbol Min Typ Max Unit
VOUT start-up mode cutoff limit Vstart 3.45 3.55 3.75 V
VOUT start-up mode hysteresis
Note: COUT = 4.7µF
Start-up regulator output current
VOUT = 0V ... Vstart
Battery Overvoltage Protection
Output overvoltage protection is used to protect phone from damage. This function is also used to define the protection cutoff voltage for different battery types (Li or Ni). The power switch is immediately turned OFF if th e voltage in VOUT rises above the selected limit VLIM1 or VLIM2.
Table 7: Battery O v ervoltage Protection
Parameter Symbol
Output voltage cutoff limit (during
transmission or Li-battery)
Output voltage cutoff limit (no
transmission or Ni-battery)F
Vstarthys 80 100 200 mV
Istart 130 165 200 mA
LIM
input
VLIM1 LOW 4.4 4.6 4.8 V
VLIM2 HIGH 4.8 5.0 5.2 V
Min Typ Max Unit
The voltage limit (VLIM1 or VLIM2) is selected by logic LOW or logic HIGH on the CHAPS (N101) LIM– input pin. Default value is lower limit VLIM1.
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When the switch in output overvoltage situation has once turned OFF, it stays OFF until the the battery voltage falls below VLIM1 (or VLIM2) and PWM = LOW is detected. The switch can be turned on again by setting PWM = HIGH.
VCH
VCH<VOUT
t
VOUT
VLIM1 or VLIM2
t
SWITCH
PWM (32Hz)
ON OFF
Battery Removal During Cha r g i n g
Output overvoltage protection is also needed in case the main battery is removed when charger connected or charger is connected before the battery is connected to the phone.
With a charger connected, if VOUT exceeds VLIM1 (or VLIM2), CHAPS turns switch OFF until the charger input has sunken below Vpor (nominal 3.0V, maximum 3.4V). MCU soft­ware will stop the charging (turn off PWM) when it detects that battery has been removed. The CHAPS remains in protection state as long as PWM stays HIGH after the output overvoltage situation has occurred.
ON
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VCH (Standard Charger)
VOUT
PWM
SWITCH
Vpor
VLIM
4V
Vstart
1
0
ON
OFF
Droop depends on load
& C in phone
2134
Istart off due to VCH<Vpor
Vstarthys
t
t
5
67
t
1 Battery removed, (standard) charger connected, VOUT rises (follows charger volt-
age) 2 VOUT exceeds limit VLIM(X), switch is turned immediately OFF 3 VOUT falls (because no battery), also VCH<Vpor (standard chargers full–rectified
output). When VCH > Vpor and VOUT < VLIM(X) –> switch turned on again (also
PWM is still HIGH) and VOUT again exceeds VLIM(X). 4 Software sets PWM = LOW –> CHAPS does not enter PWM mode 5 PWM low –> Startup mode, startup current flows until Vstart limit reached 6 VOUT exceeds limit Vstart, Istart is turned off 7 VCH falls below Vpor
Different PWM Frequencies (1Hz and 32 Hz)
When a travel charger (2–wire charger ) is used, the power switch is turned ON and OFF by the PWM input when the PWM rate is 1Hz. When PWM is HIGH, the switch is ON and the output current Iout = charger current – CHAPS supply current. When PWM is LOW, the switch is OFF and the output current Iout = 0. To prevent the switching transients inducing noise in audio circuitry of the phone soft switching is used.
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The performance travel charger (3– wire charger) is controlled with PWM at a frequency of 32Hz. When the PWM rate is 32Hz CHAPS keeps the power switch continuously in the ON state.
SWITCH
PWM (1Hz)
SWITCH
PWM (32Hz)
Battery Identification
Different battery types are identified by a pulldown resistor inside the battery pack. The BSI line inside transceiver has a 100k pullup to VBB.
The MCU can identify the battery by reading the BSI line DC–voltage level with a CCONT (N100) A/D–converter.
ON ONON OFF OFF
ON
BVOLT
BATTERY
BTEMP
BSI
R
s
BGND
Figure 10: Battery Identification
Vbb
Vibra Schematic
100k
10k
10n
BSI
SIMCardDetX
TRANSCEIVER
CCONT
MAD
The battery identification line is used also for battery removal detection. The BSI line is connected to a SIMCardDetX line of MAD2 (D300). SIMCardDetX is a threshold detector with a nominal input switching level 0.85xVcc for a rising edge and 0.55xVcc for a falling edge. The battery removal detection is used as a trigger to power down the SIM card before the power is lost. The BSI contact in the battery pack is made 0.7mm shorter than the supply voltage contacts so that there is a delay between battery removal detection
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and supply power off.
Vcc
0.850.05 Vcc
0.550.05 Vcc
SIMCARDDETX
S
GND
IGOUT
Battery Temperature
The battery temperature is measured with a NTC inside the battery pack. The BTEMP line inside transceiver has a 100k pullup to VREF. The MCU can calculate the battery temper­ature by reading the BTEMP line DC–voltage level with a CCONT (N100) A/D–converter.
BVOLT
BATTERY
NTC
Supply Voltage Regulators
The heart of the power distrubution is the CCONT. It includes all the voltage regulators and feeds the power to the whole system. The baseband digital parts are powered from the VBB regulator which provides 2.8V baseband supply. The baseband regulator is active always when the phone is powered on. The VBB baseband regulator feeds M AD and memories, COBBA digital parts and the LCD driv er in the UI section. There is a separate regulator for a SIM card. The regulator is selectable between 3V and 5V and controlled by the SIMPwr line from MAD to CCONT. The COBBA analog parts are powered from a dedi­cated 2.8V supply VCOBBA. The CCONT also supplies 5V for RF. The CC ONT contains a real time clock function, which is powered from a RTC backup when the main battery is dis­connected.
TRANSCEIVER
BSI
BTEMP
R
T
BGND
1k
VREF
100k
2k2
10k
10n
BTEMP
VibraPWM
MCUGenIO4
CCONT
MAD
Figure 11: Battery Temperature
The RTC backup is rechargable polyacene battery, which has a capacity of 50uAh (@3V/ 2V) The battery is charged from the main battery v o ltage by the CHAPS when the main battery voltage is over 3.2V. The charging current is 200uA (nominal).
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Table 8: Regulator States for Different Modes of Oper atio n
Operating mode Vref RF REG VCOBBA VBB VSIM SIMIF
Pow er o ff Pow er o n Reset
Sleep
Off
On
On
Off
Note: CCONT includes five additional 2.8V regulators providing power to the RF section. These reg­ulators can be controlled either by the direct control signals from MAD or by the RF r egulator control register in CCONT which MAD can update. Below are the listed the MAD control lines and the regu­lators they control:
- TxPwr controls VTX regulator (VR7)
- RxPwr controls VRX regulators (VR2 and VR5)
- SynthPwr controls VSYN_1 and VSYN_2 regulators (VR1_SW and VR4) VCXOPwr controls VXO regulator (VR1)
Off Off Off Off Pull down On/Off On On On On/off Off
VR1 On Off Off On On On/off
On On On Pull down
CCONT generates also a 1.5 V reference voltage VREF to COBBA, SUMMA, and CRFU. The VREF voltage is also used as a reference to some of the CCONT A/D converters.
In addition to the above-mentioned signals, MAD includes TXP control signal, which goes to SUMMA power control block and to the power amplifier. The transmitter power con­trol TXC is led from COBBA to SUMMA.

Audio Control

The audio control and processing is handled by the COBBA–GJP, which contains the audio and RF codecs, and the MAD2, which contains the MCU, ASIC, and DSP blocks handling and processing the audio signals.
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