Nokia 7110 System Module 02

PAMS Technical Documentation

NSE–5 Series Transceivers

Chapter 2

System Module

Issue 1 07/99

NSE–5
System Module

Technical Documentation

Contents

System Connector 3 – 5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DC Connector 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Slide Microphone 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Slide Connector 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Roller Interface 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Keys and Keymatrix 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Headset Connector 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Battery Connector 3 – 14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Vibra Alerting Device 3 – 14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

SIM Card Connector 3 – 15. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

PAMS

Page No

Infrared Transceiver Module 3 – 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Real Time Clock 3 – 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Baseband Module 3 – 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Technical Summary 3 – 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Distribution 3 – 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Up 3 – 22. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power up with a charger 3 – 22. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Up With The Power Switch (PWRONX) 3 – 22. . . . . . . . . . . . . . . . .

Power Up by RTC 3 – 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Up by IBI 3 – 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Acting Dead 3 – 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Active Mode 3 – 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Sleep Mode 3 – 24. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Battery charging 3 – 24. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Startup Charging 3 – 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Battery Overvoltage Protection 3 – 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Battery Removal During Charging 3 – 26. . . . . . . . . . . . . . . . . . . . . . . . . . . .

Different PWM Frequencies ( 1Hz and 32 Hz) 3 – 27. . . . . . . . . . . . . . . . . .

Battery Identification 3 – 28. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Battery Temperature 3 – 29. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Supply Voltage Regulators 3 – 30. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Audio Control 3 – 31. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Internal Microphone and Earpiece 3 – 32. . . . . . . . . . . . . . . . . . . . . . . . . . . .

External Audio Connections 3 – 32. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Internal Audio Connections 3 – 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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NSE–5

Technical Documentation

4–wire PCM Serial Interface 3 – 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Speech Processing 3 – 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Alert Signal Generation 3 – 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Digital Control 3 – 36. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

MAD2PR1 3 – 36. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

MAD2PR1 pinout 3 – 37. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Memories 3 – 47. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Program Memory 32MBit Flash 3 – 47. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

SRAM Memory 3 – 47. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

EEPROM Emulated in FLASH Memory 3 – 47. . . . . . . . . . . . . . . . . . . . . . .

MCU Memory Requirements 3 – 48. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Flash Programming 3 – 48. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

IBI Accessories 3 – 49. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Phone Power–on by IBI 3 – 49. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

System Module

IBI power–on by phone 3 – 50. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

MCU Memory Map 3 – 51. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RF Module 3 – 52. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RF Frequency Plan 3 – 53. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DC Regulators 3 – 54. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Frequency Synthesizers 3 – 55. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Receiver 3 – 56. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Transmitter 3 – 59. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

AGC 3 – 62. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

AFC function 3 – 63. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Interfacing 3 – 64. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

User Interface 3 – 65. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

LEDs 3 – 66. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Plastic Window 3 – 66. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Dust Seal 3 – 66. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

LCD Adhesive 3 – 66. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Reflector 3 – 66. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Connector 3 – 67. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Light Guide 3 – 67. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

UI Module Connection to main PCB 3 – 68. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Parts Lists 3 – 69. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Amendment 07/00

Page 2– 3

NSE–5
System Module

Technical Documentation

List of Figures.

Figure 1. System Connector – module 3 – 5. . . . . . . . . . . . . . . . . . . . . . . . . . . .

Figure 2. System Connector – detailed. 3 – 6. . . . . . . . . . . . . . . . . . . . . . . . . . .

Figure 3. Combined headset, system connector audio signals 3 – 13. . . . . . . .

Figure 4. Battery connector locations 3 – 14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Figure 5. Sim Card Reader Ultra phone 3 – 15. . . . . . . . . . . . . . . . . . . . . . . . . . . .

Figure 6. IR transmission frame – example 3 – 16. . . . . . . . . . . . . . . . . . . . . . . .

Figure 7. Block Diagram 3 – 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Figure 8. Baseband power distribution 3 – 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Figure 9. Battery Charging 3 – 24. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Figure 10. Battery Identification 3 – 28. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Figure 11. Battery Temperature 3 – 29. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Figure 12. Audio Control 3 – 31. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

PAMS

Figure 13. Combined headset and system connector audio signal 3 – 33. . . . .

Figure 14. IBI Power on 3 – 50. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Figure 15. Power Distribution 3 – 54. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Figure 16. Frequency Synthesisers 3 – 55. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Figure 17. Receiver Block Diagram 3 – 56. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Figure 18. Transmitter Block Diagram 3 – 59. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Figure 19. UI module assembled 3 – 65. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Figure 20. Mounting of LEDs for backlight. Seen from underside. 3 – 66. . . . .

Figure 21. Light guide. 3 – 67. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Figure 22. Marking specification for the light guide 3 – 68. . . . . . . . . . . . . . . . . .

Schematics/ Layouts

UBG_8v15 A1 – A12. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

UBG_8v22 A13 – A24. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Page 2– 4

Amendment 07/00

PAMS

NSE–5

Technical Documentation

System Connector

This section describes the electrical connection and interface levels

between the baseband, RF and UI parts. The electrical interface

specifications are collected into tables that cover a connector or a defined

interface.

The system connector includes the following parts:

– DC connector for external plug–in charger and a desktop charger
– System connector for accessories and intelligent battery packs

The System connector is used to connect the transceiver to accessories.

System connector pins can also be used to connect intelligent battery

packs to the transceiver.

Contact 1

System Module

2

3

4

6

Slide Detect

7

8

13

Solderable element,

2 pcs

14

DC–jack
2,3,4

Contact 5

Contacts

8...13
Contact 14

Figure 1. System Connector – module

Cable/Cradle connector
guiding/fixing hole, 2 pcs

Amendment 07/00

Page 2– 5

NSE–5
System Module

B side view

Fixing pads (2 pcs)

PAMS

Technical Documentation

IBI connector

(6 pads)

14

8

1

7

PCB

DC Jack

Microphone

acoustic ports BB

Bottom

connector (6 pads)

A

B

Charger pads (3 pcs)

A side view

Figure 2. System Connector – detailed.

Table 1. System connector signals.

Cable locking holes (3 pcs)

Pin Name Function Description

1 V_IN Bottom charger contacts Charging voltage.
2 L_GND DC Jack Logic and charging ground.
3 V_IN DC Jack Charging voltage.
4 CHRG_CTRL DC Jack Charger control.
5 CHRG_CTRL Bottom charger contacts Charger control.
6 MIC–P Slide Detect Holder Slide Detect
7 MIC–N Slide Detect Holder Gnd
8 XMIC Bottom & IBI connectors Analog audio input, DLR–3

power

9 SGND Bottom & IBI connectors Audio signal ground,

10 XEAR Bottom & IBI connectors Analog audio output.

11 MBUS Bottom & IBI connectors Bidirectional serial bus.

Page 2– 6

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Technical Documentation

Table 1. System connector signals.

(continued)

12 FBUS_RX Bottom & IBI connectors Serial data in.
13 FBUS_TX Bottom & IBI connectors Serial data out.
14 L_GND Bottom charger contacts Logic and charging ground.

System Module

DescriptionFunctionNamePin

DC Connector

The electrical specifications in NO TAG shows the idle voltage produced
by the acceptable chargers at the DC connector input. The absolute
maximum input voltage is 18V due to the transient suppressor that is
protecting the charger input.

Slide Microphone

The microphone is connected to the slide by means of springs it has a
microphone input level specified in NO TAG. The microphone requires
bias current to operate which is generated by the COBBA_GJP ASIC.

Slide Connector

An Interrupt signal to MAD2PR1 determines whether the slide is in an
open or closed position.

Roller Interface

A mechanical solution is implemented and three interrupts are fed to the
MAD2PR1

Keys and Keymatrix

0–9, *, #, send, end, soft_1, soft_2, power_on_off, roller_push,

Headset Connector

The external headset device is connected to the system connector, from
which the signals are routed to COBBA_GJP microphone inputs and
earphone outputs.

Issue 1 07/99

Page 2 – 7

NSE–5

aud u

(from

y

accessory

de ec

)

System Module

NA

MICN

mouted

in slide

PAMS

Technical Documentation

Table 2. Mic signals of the system connector

0 2 12.5 mV Connected to COBBA_GJP MIC2N

input. The maximum value corre­sponds to1 kHz, 0 dBmO network
level with input amplifier gain set to
32 dB. typical value is maximum
value – 16 dB.

NA

MICP

0 2 12.5 mV Connected to COBBA_GJP MIC2P

mounted

in slide

Pin IB-

Name Function Min Typ Max Unit Description

pin

10 Yes XEAR Analog

audio out­put

phone to
accessor

input. The maximum value corre­sponds to1 kHz, 0 dBmO network
level with input amplifier gain set to
32 dB. typical value is maximum
value – 16 dB.

Table 3. System/IBI connector

47 W Output AC impedance (ref.

GND) resistor tol. is 5%

10 mF Series output capacitance

16 300 W Load AC impedance to GND:

Headset

4.7 10 kW Load AC impedance to
SGND: External accessory.

Page 2 – 8

Accessory
detection
(fom ac­cessory to
p

phone

1.0 V

Max. output level. No load

p–p

100 kW Resistance to accessory

ground (in accessory)

0.5 V DC Voltage (ref. SGND). Ex­ternal accessory

6.8 kW Load DC resistance to
SGND. External accessory

0 0.2 V DC Voltage (ref. SGND).

Headset with closed switch

16 1500 W Load DC resistance to

SGND. Headset with closed
switch

2.8 V DC Voltage (ref. SGND). No
accessory, or headset with
open switch

47 kW Pull–up resistor to VBB in

phone

Issue 1 07/99

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t

)

to hone)

(

(f

g

(from hone to

NSE–5

Technical Documentation

8 Yes XMIC Analog audio in-

put (from acces­sory to phone)

Headset micro­phone inpu
(from accessory
to phone

Accessory mute.

Voltage

p

compared to
SGND.
(from phone to
accessory)

System Module

2.0 2.2 k Input AC impedance
100

1

V

2.0 2.2 k Input AC impedance

2.5 k Headset source AC im-

100 600 A Bias current

200

2.5 2.9 V Not muted

0 1.55 V Muted, without headset

1.6 2.0 2.4 V Comparator reference in

mV-

p–p

Accessory source AC im-



pedance
Maximum signal level

p–

p

pedance

Maximum signal level

accessory

Headset
detection
(from accessory
to phone)

DLR–3 detection

rom accessory to

phone)

9 Yes SGND Audio signal

ground.
Separated from
phone GND

p

accessory)

1.47 2.9 V No headset (ref.
SGND).

0 1.33 V Headset connected

(ref. SGND).

49 k Pull–up resistor to VBB

in phone

1.47 2.9
440 733

49

mV

k

No DLR–3 ((ref SGND)

V

DLR–3 connected (ref.
SGND).

Pull–up resistor to VBB in
phone

47  Output AC impedance

(ref. GND)

10 F Series output capaci-

tance

380  Resistance to phone

ground (DC) (in phone)

Amendment 07/00

100 k Resistance to accesso-

ry ground (in accesso­ry)

–0.2 +0.2 V DC voltage compared

to phone GND

–5 +5 V DC voltage compared

to accessory GND

Page 2– 9

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to hone)

System Module

PAMS

Technical Documentation

13 Yes FBUS_TXSerial data out

(from phone to
accessory)

12 Yes FBUS_RXSerial data in

(from accesso­ry to phone)

0.1 0.8 V Output low voltage @

I

 4 mA (ref. GND)

OL

1.7 2.8 V Output high voltage @

I

 4 mA (ref. GND)

OH

47 k Pull–up resistor in

phone

220 k Pull–down resistor in

accessory

47 100  Serial (EMI filtering) re-

sistor in phone

150 pF Cable capacitance

1 s Rise/Fall time

0 0.8 V Input low voltage (ref.

GND)

2.0 2.8 V Input high voltage (ref.

GND)

220 k Pull–down resistor in

phone

47 k Pull–up resistor in ac-

cessory

11 Yes MBUS

FLASH_

CLK

Bidirectional seri­al bus

Flash serial data
clock
(from accessory

p

2.2 k Serial (EMI filtering) re­sistor in accessory

150 pF Cable capacitance

2 s Rise/Fall time @

115kbits/s

1 s Rise/Fall time @

230kbits/s

0 0.8 V Input low voltage (ref.

GND)

2.0 2.8 V Input high voltage (ref.
GND)

0 0.8 V

2.1 2.9 V

4.7 k Pull–up resistor in phone

220 k Pull–down resistor in ac-

100  Serial (EMI filtering) resis-

Output low voltage @
I

 4 mA (ref. GND)

OL

Output high voltage @
I

 100 A (ref. GND)

OH

cessory

tor in phone

Page 2– 10

200 pF Cable capacitance

5

Rise/Fall time @ 9600

s

bits/s

Amendment 07/00

PAMS

(f

)

to hone)

NSE–5

Technical Documentation

2,

14

4,5

1,3 –

L_GND Logic and charg-

–

ing ground (sep­arated from
phone GND by
EMI compo­nents)

–

CHRG_

CTRL

VIN Fast charger

Charger control
(from phone to
accessory

rom accessory

to phone

Slow charger
(fom accessory
to phone)

System Module

0 1.0 A Ground current

0 0.8 V Output low voltage @ I

 20 A

1.7

1 99 % PWM duty cycle

0 8.5 V Charging voltage.
0 0.85 A Charging current.

2.9 V Output high voltage @
I

 20 A

OH

32 37 Hz PWM frequency

20 k Serial (EMI filtering) resis-

tor in phone

30 k Pull–down resistor in

phone

100

mV-

p–p

Ripple voltage @ f =

20...200Hz, load = 3 &
10 

100

100

200

0

15 V

mV-

p–p

mV-

p–p

mV-

p–p

peak

Ripple voltage @ f =

0.2...30 kHz, load = 3 &
10 

Ripple voltage @ f > 30
kHz, load = 3 & 10 

Total ripple voltage @ f >
20 Hz, load = 3 & 10 

Charging voltage (max. =
unloaded, +20 % overvol­tage in mains).

OL

0 1.0

A

Amendment 07/00

Charging current (max. =

pea

shorted, +20 % overvol-

k

tage in mains).

Page 2– 11

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System Module

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Technical Documentation

Baseband

HOOKDET

MAD

HEADDET

CCONT

EAD

HF

COBBA
–GJP

AUX
OUT

PD2

GND

10

10k

100n

GND

10u

27p

100n

1u

220k

220k

VBB VBB

2k2 47k

2k2

VBB

47k

47R

100MHz

33R

GND

XEAR

LGND

PC–Board

R01

SW01

+

+

+

C01

C03

C02

HFCM

MIC1N

MIC1P

MIC3N

MIC3P

GND

100n

100n

100n

100n

GND

27p

2k2

27p

2k2

100R

100R

330R

XMIC

SGND

R01= 100R
C01=33uF

L01

C02=1000pF

GND GND GND

C03=22pF
L01=MMZ2012Y6
01BT/TDK

Note 1: Grey resistor are in the border of ”EMI clean” and ”dirty” areas.
Note 2: ESD protection diodes are not shown.

Figure 1. Combined headset, system connector audio signals

Z01

Page 2– 12

Amendment 07/00

PAMS

NSE–5

Technical Documentation

Battery Connector

The BSI contact on the battery connector is used to detect when the
battery is removed with power switched on enabling the SIM card
operation to shut down first. The BSI contact in the battery pack should be
shorter than the supply power contacts to give enough time for the SIM
shut down.

12

34

System Module

No metal in these areas!
old connector type

B side view.

phone

Vibra Alerting Device

A vibra alerting device is used to give a silent signal to the user of an
incoming call it is mounted in the B–cover. A special battery pack contains
a vibra motor. The vibra is controlled with one PWM signal by the
MAD2PR1 via the BTEMP battery terminal.

Figure 4. Battery connector locations

+VBATT

1

BSI

2

BTEMP

3

–VBATT

4

Issue 1 07/99

Page 2 – 13

NSE–5
System Module

SIM Card Connector

The SIM card connector is located on the PCB. Only small SIM cards are
supported.

PAMS

Technical Documentation

321

456

Figure 5. Sim Card Reader Ultra phone

Table 4. SIM Connector Electrical Specifications

Pin Name Parameter Min Typ Max Unit Notes

1 GND GND 0 0 V Ground
2 VSIM 5V SIM

Card

4.8

2.8

5.0

3.0

5.2

3.2

V Supply voltage

3V SIM

Card

3 DATA 5V Vin/Vout

3V Vin/Vout

4 SIMRS

T

5V SIM

Card

4.0
0

2.8
0

4.0

2.8

”1”
”0”
”1”
”0”

”1”
”1”

VSIM

0.5

VSIM

0.5

VSIM
VSIM

V SIM data

Trise/Tfall max 1us

V SIM reset

3V SIM

Card

5 SIMCLKFrequency

3.25

MHz

SIM clock

Trise/Tfall

6 VPP 5V SIM

Card

3V SIM

Card

VSIM supply voltages are specified to meet type approval requirements
regardless the tolerances in components.

Page 2 – 14

4.8

2.8

5.0

3.0

25

5.2

3.2

ns

V Programming voltage

pin6 and pin2 tied to-

gether

Issue 1 07/99

PAMS

NSE–5

Technical Documentation

Infrared Transceiver Module

An infrared transceiver module is designed as a substitute for hardwired
connections between the phone and a PC. The infrared transceiver
module is a stand alone component. In DCT3 the module is located
inside and at the top of the phone.

The Rx and Tx is connected to the FBUS via a dual bus buffer. The
module and buffer is activated from the MAD2_pr1 with a pull up on IRON.
The Accif in MAD2_pr1 performs pulse encoding and shaping for
transmitted data pulses and detection and decoding for received data
pulses.

The data is transferred over the IR link using serial FBUS data at speeds

9.6, 19.2, 38.4, 57.6 or 115.2 kbits/s, which leads to maximum throughput
of 92.160 kbits/s. The used IR module complies with the IrDA SIR
specification (Infra Red Data Association), which is based on the HP SIR
(Hewlett–Packard‘s Serial Infra Red) consept.

System Module

The Following figure gives an example of IR transmission pulses. In IR
transmission a light pulse correspondes to 0–bit and a ”dark pulse”
correspondes to 1–bit.

constant pulse

IR TX

UART TX

startbit stopbit1 0100110

Figure 6. IR transmission frame – example

The FBUS cannot be used for external accessory communication, when
the infrared mode is selected. Infrared communication reserves the FBUS
completely.

Issue 1 07/99

Page 2 – 15

NSE–5
System Module

Real Time Clock

Requirements for a real time clock implementation are a basic clock
(hours and minutes), a calender and a timer with alarm and power on/off
–function and miscellaneous calls. The RTC will contain only the time
base and the alarm timer but all other functions (e.g. calendar) will be
implemented with the MCU software. The RTC needs a power backup to
keep the clock running when the phone battery is disconnected. The
backup power is supplied from a rechargable polyacene battery that can
keep the clock running for approximately ten minutes. If the backup has
expired, the RTC clock restarts after the main battery is connected. The
CCONT resets the MCU in approx 62ms and the 32kHz source is settled
(after approx. 1s).

The CCONT is an ideal place for an integrated real time clock as the asic
already contains the power up/down functions and a sleep control with the
32kHz sleep clock, which is always running when the phone battery is
connected. This sleep clock is used for a time source to a RTC block.

PAMS

Technical Documentation

Page 2 – 16

Issue 1 07/99

PAMS

NSE–5

Technical Documentation

Baseband Module

Technical Summary

The baseband architecture is basically similar to DCT3 GSM phones.
DCT3.5 differs from DCT3 in the single pcb koncept and the seriel
interface between MAD2PR1 and COBBA_GJP and MAD2PR1 and
CCONT. In DCT3.5 the MCU, the system specific ASIC and the DSP are
intergrated into one ASIC, called the MAD2PR1 chip, which takes care of
all the signal processing and operation controlling tasks of the phone.

The baseband architecture supports a power saving function called ”sleep
mode”. This sleep mode shuts off the VCTCXO, which is used as system
clock source for both RF and baseband. During the sleep mode the
system runs from a 32 kHz crystal. The phone is waken up by a timer
running from this 32 kHz clock supply. The sleeping time is determined by
some network parameters. When the sleep mode is entered both the
MCU and the DSP are in standby mode and the normal VCTCXO clock
has been switched off.

System Module

The battery voltage range in DCT3 family is 3.0V to 4.5V depending on
the battery charge and used cell type (Li–Ion or NiMH). Because of the
lower battery voltage the baseband supply voltage is lowered to a nominal
of 2.8V.

The baseband is running from a 2.8V power rail which is supplied by a
power controling asic (CCONT). In the CCONT there are seven
individually controlled regulator outputs for the RF section, one 2.8V
output for the baseband plus a core voltage for MAD2PR1. However this
is not used in NSE–5 because the chipset supports 2.8Volts. In addition
there is one +5V power supply output(V5V). TheCCONTalso contains a
SIM interface which supports both 3V and 5V SIM cards. A real time clock
function is integrated into the CCONT which utilises the same 32KHz
clock supply as the sleep clock. A backup power supply is provided for
the RTC which keeps the real time clock running when the main battery is
removed. The backup power supply is a rechargeable polyacene battery
with a backup time of ten minutes.

The interface between the baseband and the RF section is handled by a
specific asic. The COBBA_GJP asic provides A/D and D/A conversion of
the in–phase and quadrature receive and transmit signal paths and also
A/D and D/A conversions of received and transmitted audio signals to and
from the UI parts. Data transmission between the COBBA_GJP and the
MAD2PR1 is implemented using serial connections. Digital speech
processing is handled by the MAD2PR1 asic. The COBBA_GJP asic is a
dual supply voltage circuit, the digital parts are running from the baseband
supply VBB and the analog parts are running from the analog supply
VCOBBA (VR6).

Issue 1 07/99

Page 2 – 17

NSE–5
System Module

PAMS

Technical Documentation

LCD

vibra
motor

IR

roller

TX/RX SIGNALS

COBBA_GJP

AUDIOLINES

BASEBAND

COBBA SUPPLY

MAD2pr1
+

MEMORIES

RF SUPPLIES

CCONT

BB SUPPLY

core voltage

SYSCON

CHAPS

PA SUPPLY

SIM

32kHz
CLK

SLEEP CLOCK

VBAT

13MHz
CLK

SYSTEM CLOCK

BATTERY
NiMH LiIon

Power Distribution

In normal operation the baseband is powered from the phone‘s battery.
The battery consists of one Lithium–Ion cell. There is also a possibility to
use batteries consisting of three Nickel Metal Hydride cells or one Solid
state cell. An external charger can be used for recharging the battery and
supplying power to the phone. The charger can be either so called fast
charger, which can deliver supply current up to 1600 mA or a standard
charger that can deliver approx 300 mA.

The CCONT provides voltage to the circuitry excluding the RF PA, LCD
and IrDa which are supplied via a continuous power rail direct from the
battery. The RF PA module has a cutoff voltage of 3.1V. The battery

note)

feeds power directly to several parts of the system: CCONT, PA and
UI circuitry (display lights, buzzer). The four dedicated control lines,
RxPwr, TxPwr, SIMCardPwr and SynthPwr from MAD2 to CCONT have
changed to a serial control signal between MAD2PR1 and CCONT.
Figure 8 shows a simplified block diagram of the power distribution.

Figure 7. Block Diagram

(see

Note : In battery terms there is VBATT and VB, the difference is a filter (coil and
capacitors)

Page 2 – 18

Issue 1 07/99

PAMS

NSE–5

Technical Documentation

The power management circuitry provides protection against
overvoltages, charger failures and pirate chargers etc. that could cause
damage to the phone.

PA SUPPLY

LCD
MODULE

VBB

COBBA_GJP

VBAT

MEMORIES

VCOBBA

MAD2pr1

+

RF SUPPLIES

CCONT

PWRONX

CNTVR

VBB

core voltage

PURX

POWER
MGMT

VSIM

VBAT

PWM

SIM

RTC

BACKUP

sram

BATTERY

System Module

BASEBAND

CONNECTOR

VIN

Figure 8. Baseband power distribution

The heart of the power distrubution is the CCONT. It includes all the
voltage regulators and feeds the power to most of the system. The whole
baseband is powered from the same regulator which provides 2.8V
baseband supply VBB. The baseband regulator is active always when the
phone is powered on. The core baseband regulator feeds, amongst
others, MAD2PR1 and memories, COBBA_GJP digital parts and the LCD
driver in the UI section. COBBA_GJP analog parts are powered from a
dedicated 2.8V supply VCOBBA by the CCONT. There is a separate
regulator for a SIM card which is selectable between 3V and 5V and
controlled by the SIMPwr line from MAD2PR1 to CCONT.

The CCONT contains a real time clock function, which is powered from a
RTC backup when the main battery is disconnected. The RTC backup is
rechargable polyacene battery.

CCONT includes also six additional 2.8V regulators providing power to the
RF section. These regulators can be controlled by the seriel interface from
MAD2PR1 ie RF regulator control register in CCONT which MAD2PR1
can update.

Issue 1 07/99

Page 2 – 19

NSE–5
System Module

CCONT supply a core voltage to the MAD2PR1. The core voltage is by
default 1.975V.

RAM backup as in PDC3 phone.
CCONT generates also a 1.5 V reference voltage VREF to COBBA_GJP,

SUMMA. The VREF voltage is also used as a reference to some of the
CCONT A/D converters and as a reference for al the other regulators.

In additon to the above mentioned signals MAD2PR1 includes also TXP
control signal which goes to SUMMA power control block and to the power
amplifier. The transmitter power control TXC is led from COBBA_GJP to
SUMMA.

PAMS

Technical Documentation

Table 5. CCONT current output capability/ nominal voltage

Regulator Maximum

Unit Vout Unit Notes

current

VR1 25 mA 2.8 V VCTCXO
VR2 25 mA 2.8 V CRFU Rx
VR3/switch 50 mA 2.8 V PLL VSYN
VR4 90 mA 2.8 V VCO VSYN
VR5 80 mA 2.8 V PLUSSA Rx
VR6 100 mA 2.8 V COBBA_GJP
VR7 150 mA 2.8 V PLUSSA+CRFU Tx
VBB ON

VBB SLEEP
VSIM 30 mA 3.0/

125
1

mA
mA

2.8

2.8

5.0

V
V

V
V

current limit 250mA
current limit 5mA

VSIM
outout voltage selectable

V_core 50 mA 1.975 V programmable core sup-

ply for cpu/dsp/sys asic
dV=225mV

V_RAM_bck/
VR3

50 mA 2.8 V nomal mode 2.8V. 2.0V

for data retention.

VSIM must fullfill the GSM11.10 current spike requirements.
VSIM and V5V can give a total of 30 mA.

Page 2 – 20

Issue 1 07/99

PAMS

NSE–5

Technical Documentation

Power Up

The baseband is powered up by:

1. Pressing the power key, that generates a PWRONX interrupt
signal from the power key to the CCONT, which starts the pow­er up procedure.

2. Connecting a charger to the phone. The CCONT recognizes
the charger from the VCHAR voltage and starts the power up
procedure.

3. A RTC interrupt. If the real time clock is set to alarm and the
phone is switched off, the RTC generates an interrupt signal,
when the alarm is gone off. The RTC interrupt signal is con­nected to the PWRONX line to give a power on signal to the
CCONT just like the power key.

System Module

4. A battery interrupt. Intelligent battery packs have a possibility
to power up the phone. When the battery gives a short (10ms)
voltage pulse through the BTEMP pin, the CCONT wakes up
and starts the power on procedure.

Power up with a charger

When the charger is connected CCONT will switch on the CCONT digital
voltage as soon as the battery voltage exeeds 3.0V. The reset for
CCONT’s digital parts is released when the operating voltage is stabilized
( 50 us from switching on the voltages). Operating voltage for VCXO is
also switched on. The counter in CCONT digital section will keep MAD in
reset for 62 ms (PURX) to make sure that the clock provided by VCXO is
stable. After this delay MAD reset is relased, and VCXO –control
(SLEEPX) is given to MAD. The diagram assumes empty battery, but the
situation would be the same with full battery:

When the phone is powered up with an empty battery pack using the
standard charger, the charger may not supply enough current for standard
powerup procedure and the powerup must be delayed.

Power Up With The Power Switch (PWRONX)

When the power on switch is pressed the PWRONX signal will go low.
CCONT will switch on the CCONT digital section and VCXO as was the
case with the charger driven power up. If PWRONX is low when the 64 ms
delay expires, PURX is released and SLEEPX control goes to MAD. If
PWRONX is not low when 64 ms expires, PURX will not be released, and
CCONT will go to power off ( digital section will send power off signal to
analog parts)

Issue 1 07/99

Page 2 – 21

NSE–5
System Module

PAMS

Technical Documentation

SLEEPX

PURX

CCPURX

PWRONX

VR1,VR6
VBB (2.8V)

Vchar

12 3

1:Power switch pressed ==> Digital voltages on in CCONT (VBB)
2: CCONT digital reset released. VCXO turned on
3: 62 ms delay to see if power switch is still pressed.

Power Up by RTC

RTC ( internal in CCONT) can power the phone up by changing RTCPwr
to logical ”1”. RTCPwr is an internal signal from the CCONT digital
section.

Power Up by IBI

IBI can power CCONT up by sending a short pulse to logical ”1”. RTCPwr
is an internal signal from the CCONT digital section.

Acting Dead

If the phone is off when the charger is connected, the phone is powered
on but enters a state called ”acting dead”. To the user the phone acts as if
it was switched off. A battery charging alert is given and/or a battery
charging indication on the display is shown to acknowledge the user that
the battery is being charged.

Active Mode

In the active mode the phone is in normal operation, scanning for
channels, listening to a base station, transmitting and processing
information. All the CCONT regulators are operating. There are several
substates in the active mode depending on if the phone is in burst
reception, burst transmission, if DSP is working etc..

Page 2 – 22

Issue 1 07/99

PAMS

NSE–5

Technical Documentation

Sleep Mode

In the sleep mode all the regulators except the baseband VBB, Vcore and
the SIM card VSIM regulators are off. Sleep mode is activated by the
MAD2PR1 after MCU and DSP clocks have been switched off. The
voltage regulators for the RF section are switched off and the VCXO
power control, VCXOPwr is set low. In this state only the 32 kHz sleep
clock oscillator in CCONT is running. The flash memory power down input
is connected to the VCXO power control, so that the flash is deep
powered down during sleep mode.

The sleep mode is exited either by the expiration of a sleep clock counter
in the MAD2PR1 or by some external interrupt, generated by a charger
connection, key press, headset connection etc. The MAD2PR1 starts the
wake up sequence and sets the VCXOPwr control high. After VCXO
settling time other regulators and clocks are enabled for active mode.

If the battery pack is disconnect during the sleep mode, the CCONT shall
power down the SIM in the sleep mode as there is no time to wake up the
MCU.

System Module

Battery charging

MAD

VBAT

MAD

CCONTINT

CCONT

The electrical specifications give the idle voltages produced by the
acceptable chargers at the DC connector input. The absolute maximum
input voltage is 30V due to the transient suppressor that is protecting the
charger input. At phone end there is no difference between a plug–in
charger or a desktop charger. The DC–jack pins and bottom connector
charging pads are connected together inside the phone.

0R22

PWM_OUT

ICHAR

VCHAR

LIM
VOUT

CHAPS

RSENSE

PWM

VCH

GND

22k

1n

TRANSCEIVER

27pf

47k

33R/100MHz

1u

30V

1.5A

EMI

VIN

CHRG_CTRL

CHARGER

NOT IN
ACP–7/8

GND

Issue 1 07/99

47k

Figure 9. Battery Charging

L_GND

Page 2 – 23

NSE–5
System Module

Startup Charging

When a charger is connected, the CHAPS is supplying a startup current
minimum of 130mA to the phone. The startup current provides initial
charging to a phone with an empty battery. Startup circuit charges the
battery until the battery voltage level is reaches 3.0V (+/– 0.1V) and the
CCONT releases the PURX reset signal and program execution starts.
Charging mode is changed from startup charging to PWM charging that is
controlled by the MCU software. If the battery voltage reaches 3.55V
(3.75V maximum) before the program has taken control over the charging,
the startup current is switched off. The startup current is switched on
again when the battery voltage is sunken 100mV (nominal).

Parameter Symbol Min Typ Max Unit

PAMS

Technical Documentation

Table 6.

VOUT Start– up mode cutoff limit Vstart 3.45 3.55 3.75 V

VOUT Start– up mode hysteresis

NOTE: Cout = 4.7 uF

Start–up regulator output current

VOUT = 0V ... Vstart

Vstarthys 80 100 200 mV

Istart 130 165 200 mA

Battery Overvoltage Protection

Output overvoltage protection is used to protect phone from damage. This
function is also used to define the protection cutoff voltage for different
battery types (Li or Ni). The power switch is immediately turned OFF if the
voltage in VOUT rises above the selected limit VLIM1 or VLIM2.

Table 7.

Parameter Symbol LIM input Min Typ Max Unit

Output voltage cutoff limit

(during transmission or Li–

battery)

Output voltage cutoff limit

(no transmission or Ni–bat-

tery)

VLIM1 LOW 4.4 4.6 4.8 V

VLIM2 HIGH 4.8 5.0 5.2 V

The voltage limit (VLIM1 or VLIM2) is selected by logic LOW or logic HIGH
on the CHAPS (N101) LIM– input pin. Default value is lower limit VLIM1.

When the switch in output overvoltage situation has once turned OFF, it
stays OFF until the the battery voltage falls below VLIM1 (or VLIM2) and
PWM = LOW is detected. The switch can be turned on again by setting
PWM = HIGH.

Page 2 – 24

Issue 1 07/99

PAMS

NSE–5

Technical Documentation

VCH

VCH<VOUT

VOUT

VLIM1 or VLIM2

System Module

t

t

SWITCH

PWM (32Hz)

ON OFF

Battery Removal During Charging

Output overvoltage protection is also needed in case the main battery is
removed when charger connected or charger is connected before the
battery is connected to the phone.

With a charger connected, if VOUT exceeds VLIM1 (or VLIM2), CHAPS
turns switch OFF until the charger input has sunken below Vpor (nominal

3.0V, maximum 3.4V). MCU software will stop the charging (turn off PWM)
when it detects that battery has been removed. The CHAPS remains in
protection state as long as PWM stays HIGH after the output overvoltage
situation has occured.

ON

Issue 1 07/99

Page 2 – 25

NSE–5
System Module

PAMS

Technical Documentation

VCH
(Standard
Charger)

VOUT

PWM

SWITCH

Vpor

VLIM

4V

Vstart

”1”

”0”

ON

OFF

Droop depends on load

& C in phone

2

4

5

6

7

Istart off due to VCH<Vpor

Vstarthys

t

t

t

1.1Battery removed, (standard) charger connected, VOUT rises (follows charger voltage)

2. VOUT exceeds limit VLIM(X), switch is turned immediately OFF

3.3VOUT falls (because no battery) , also VCH<Vpor (standard chargers full–rectified
output). When VCH > Vpor and VOUT < VLIM(X) –> switch turned on again (also PWM
is still HIGH) and VOUT again exceeds VLIM(X).

4. Software sets PWM = LOW –> CHAPS does not enter PWM mode

5. PWM low –> Startup mode, startup current flows until Vstart limit reached

6. VOUT exceeds limit Vstart, Istart is turned off

7. VCH falls below Vpor

Different PWM Frequencies ( 1Hz and 32 Hz)

When a travel charger (2– wire charger) is used, the power switch is
turned ON and OFF by the PWM input when the PWM rate is 1Hz. When
PWM is HIGH, the switch is ON and the output current Iout = charger
current – CHAPS supply current. When PWM is LOW, the switch is OFF
and the output current Iout = 0. To prevent the switching transients
inducing noise in audio circuitry of the phone soft switching is used.

The performance travel charger (3– wire charger) is controlled with PWM
at a frequency of 32Hz. When the PWM rate is 32Hz CHAPS keeps the
power switch continuously in the ON state.

Page 2 – 26

Issue 1 07/99

PAMS

NSE–5

Technical Documentation

SWITCH

PWM (1Hz)

SWITCH

PWM (32Hz)

System Module

ON ONON OFF OFF

ON

Battery Identification

Different battery types are identified by a pulldown resistor inside the
battery pack. The BSI line inside transceiver has a 100k pullup to VBB.
The MCU can identify the battery by reading the BSI line DC–voltage level
with a CCONT (N100) A/D–converter.

BATTERY

R

BVOLT

Vibra Schematic

BTEMP

BSI

s

BGND

Vbb

100k

10k

10n

TRANSCEIVER

BSI

SIMCardDetX

CCONT

MAD

Issue 1 07/99

Figure 10. Battery Identification

Page 2 – 27

NSE–5
System Module

The battery identification line is used also for battery removal detection.
The BSI line is connected to a SIMCardDetX line of MAD2 (D200).
SIMCardDetX is a threshold detector with a nominal input switching level

0.85xVcc for a rising edge and 0.55xVcc for a falling edge. The battery
removal detection is used as a trigger to power down the SIM card before
the power is lost. The BSI contact in the battery pack is made 0.7mm
shorter than the supply voltage contacts so that there is a delay between
battery removal detection and supply power off,

0.850.05 Vcc

0.550.05 Vcc

GND

PAMS

Technical Documentation

Vcc

SIMCARDDETX

SIGOUT

Battery Temperature

The battery temperature is measured with a NTC inside the battery pack.
The BTEMP line inside transceiver has a 100k pullup to VREF. The MCU
can calculate the battery temperature by reading the BTEMP line
DC–voltage level with a CCONT (N100) A/D–converter.

BATTERY

R

T

NTC

BVOLT

BSI

BTEMP

BGND

1k

TRANSCEIVER

VREF

Vibra Schematic

100k

10k

2k2

10n

BTEMP

VibraPWM

CCONT

MAD

Page 2 – 28

MCUGenIO4

Figure 11. Battery Temperature

Issue 1 07/99

PAMS

NSE–5

Technical Documentation

Supply Voltage Regulators

The heart of the power distrubution is the CCONT. It includes all the
voltage regulators and feeds the power to the whole system. The
baseband digital parts are powered from the VBB regulator which
provides 2.8V baseband supply. The baseband regulator is active always
when the phone is powered on. The VBB baseband regulator feeds MAD
and memories, COBBA digital parts and the LCD driver in the UI section.
There is a separate regulator for a SIM card. The regulator is selectable
between 3V and 5V and controlled by the SIMPwr line from MAD to
CCONT. The COBBA analog parts are powered from a dedicated 2.8V
supply VCOBBA. The CCONT supplies also 5V for RF and for flash VPP.
The CCONT contains a real time clock function, which is powered from a
RTC backup when the main battery is disconnected.

The RTC backup is rechargable polyacene battery, which has a capacity
of 50uAh (@3V/2V) The battery is charged from the main battery voltage
by the CHAPS when the main battery voltage is over 3.2V. The charging
current is 200uA (nominal).

System Module

Table 8.

Operating mode Vref RF REG VCOB-

VBB VSIM SIMIF

BA

Power off Off Off Off Off Off Pull

down
Power on On On/Off On On On On/Off
Reset On Off

VR1 On

On On Off Pull

down
Sleep On Off On On On On/Off

Note: CCONT includes also five additional 2.8V regulators providing power to the RF
section. These regulators can be controlled either by the direct control signals from MAD
or by the RF regulator control register in CCONT which MAD can update. Below are the
listed the MAD control lines and the regulators they are controlling.

–

TxPwr controls VTX regulator (VR5)

–

RxPwr controls VRX regulator (VR2)

–

SynthPwr controls VSYN_1 and VSYN_2 regulators (VR4 and VR3)

–

VCXOPwr controls VXO regulator (VR1)

CCONT generates also a 1.5 V reference voltage VREF to COBBA,
PLUSSA and CRFU. The VREF voltage is also used as a reference to
some of the CCONT A/D converters.

In additon to the above mentioned signals MAD includes also TXP control
signal which goes to PLUSSA power control block and to the power
amplifier. The transmitter power control TXC is led from COBBA to
PLUSSA.

Issue 1 07/99

Page 2 – 29