Nokia 7110 Service Manual ch2sys

PAMS Technical Documentation
NSE–5 Series Transceivers
Chapter 2
System Module
Issue 1 07/99
NSE–5 System Module
Technical Documentation
Contents
System Connector 3 – 5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Connector 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Slide Microphone 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Slide Connector 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Roller Interface 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Keys and Keymatrix 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Headset Connector 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery Connector 3 – 14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Vibra Alerting Device 3 – 14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SIM Card Connector 3 – 15. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAMS
Page No
Infrared Transceiver Module 3 – 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Real Time Clock 3 – 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Baseband Module 3 – 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Technical Summary 3 – 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Distribution 3 – 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Up 3 – 22. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power up with a charger 3 – 22. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Up With The Power Switch (PWRONX) 3 – 22. . . . . . . . . . . . . . . . .
Power Up by RTC 3 – 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Up by IBI 3 – 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Acting Dead 3 – 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Active Mode 3 – 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Sleep Mode 3 – 24. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery charging 3 – 24. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Startup Charging 3 – 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery Overvoltage Protection 3 – 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery Removal During Charging 3 – 26. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Different PWM Frequencies ( 1Hz and 32 Hz) 3 – 27. . . . . . . . . . . . . . . . . .
Battery Identification 3 – 28. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery Temperature 3 – 29. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply Voltage Regulators 3 – 30. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Audio Control 3 – 31. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Internal Microphone and Earpiece 3 – 32. . . . . . . . . . . . . . . . . . . . . . . . . . . .
External Audio Connections 3 – 32. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Internal Audio Connections 3 – 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Page 2 – 2
Issue 1 07/99
PAMS
NSE–5
Technical Documentation
4–wire PCM Serial Interface 3 – 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Speech Processing 3 – 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Alert Signal Generation 3 – 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Control 3 – 36. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MAD2PR1 3 – 36. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MAD2PR1 pinout 3 – 37. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Memories 3 – 47. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Program Memory 32MBit Flash 3 – 47. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SRAM Memory 3 – 47. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EEPROM Emulated in FLASH Memory 3 – 47. . . . . . . . . . . . . . . . . . . . . . .
MCU Memory Requirements 3 – 48. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Flash Programming 3 – 48. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IBI Accessories 3 – 49. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phone Power–on by IBI 3 – 49. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IBI power–on by phone 3 – 50. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MCU Memory Map 3 – 51. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Module 3 – 52. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Frequency Plan 3 – 53. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Regulators 3 – 54. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency Synthesizers 3 – 55. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Receiver 3 – 56. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transmitter 3 – 59. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AGC 3 – 62. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AFC function 3 – 63. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Interfacing 3 – 64. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
User Interface 3 – 65. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
LEDs 3 – 66. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Plastic Window 3 – 66. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Dust Seal 3 – 66. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
LCD Adhesive 3 – 66. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reflector 3 – 66. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Connector 3 – 67. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Light Guide 3 – 67. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UI Module Connection to main PCB 3 – 68. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Parts Lists 3 – 70. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Issue 1 07/99
Page 2 – 3
NSE–5 System Module
Technical Documentation
List of Figures.
Figure 1. System Connector – module 3 – 5. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 2. System Connector – detailed. 3 – 6. . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 3. Combined headset, system connector audio signals 3 – 13. . . . . . . .
Figure 4. Battery connector locations 3 – 14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 5. Sim Card Reader Ultra phone 3 – 15. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 6. IR transmission frame – example 3 – 16. . . . . . . . . . . . . . . . . . . . . . . .
Figure 7. Block Diagram 3 – 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 8. Baseband power distribution 3 – 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 9. Battery Charging 3 – 24. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 10. Battery Identification 3 – 28. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 11. Battery Temperature 3 – 29. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 12. Audio Control 3 – 31. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAMS
Figure 13. Combined headset and system connector audio signal 3 – 33. . . . .
Figure 14. IBI Power on 3 – 50. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 15. Power Distribution 3 – 54. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 16. Frequency Synthesisers 3 – 55. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 17. Receiver Block Diagram 3 – 56. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 18. Transmitter Block Diagram 3 – 59. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 19. UI module assembled 3 – 65. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 20. Mounting of LEDs for backlight. Seen from underside. 3 – 66. . . . .
Figure 21. Light guide. 3 – 67. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 22. Marking specification for the light guide 3 – 68. . . . . . . . . . . . . . . . . .
Schematics/ Layouts
System Block Diagram A –1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF and BB Interconnections A –2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Baseband Block A –3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Audio A –4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CPU A –5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Infrared Module A –6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power A –7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
User Interface A –8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CRFU3 A –9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PA A –10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SUMMA A –11. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Component Layout – Top A –12. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Component Layout – Bottom A –13. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Page 2 – 4
Issue 1 07/99
PAMS
NSE–5
Technical Documentation

System Connector

This section describes the electrical connection and interface levels
between the baseband, RF and UI parts. The electrical interface
specifications are collected into tables that cover a connector or a defined
interface.
The system connector includes the following parts:
– DC connector for external plug–in charger and a desktop charger – System connector for accessories and intelligent battery packs
The System connector is used to connect the transceiver to accessories.
System connector pins can also be used to connect intelligent battery
packs to the transceiver.
Contact 1
2
3
4
6
Slide Detect
7
8
13
Solderable element,
2 pcs
14
DC–jack 2,3,4
Contact 5
Contacts
8...13 Contact 14
Figure 1. System Connector – module
Cable/Cradle connector guiding/fixing hole, 2 pcs
Issue 1 07/99
Page 2 – 5
NSE–5 System Module
B side view
Fixing pads (2 pcs)
PAMS
Technical Documentation
IBI connector
(6 pads)
14
8
1
7
A side view
PCB
DC Jack
A
B
Charger pads (3 pcs)
Figure 2. System Connector – detailed.
Table 1. System connector signals.
Microphone
acoustic ports BB
Bottom
connector (6 pads)
Cable locking holes (3 pcs)
Pin Name Function Description
1 V_IN Bottom charger contacts Charging voltage. 2 L_GND DC Jack Logic and charging ground. 3 V_IN DC Jack Charging voltage. 4 CHRG_CTRL DC Jack Charger control. 5 CHRG_CTRL Bottom charger contacts Charger control. 6 MIC–P Slide Detect Holder Slide Detect 7 MIC–N Slide Detect Holder Gnd 8 XMIC Bottom & IBI connectors Analog audio input. 9 SGND Bottom & IBI connectors Audio signal ground.
10 XEAR Bottom & IBI connectors Analog audio output.
11 MBUS Bottom & IBI connectors Bidirectional serial bus.
Page 2 – 6
Issue 1 07/99
PAMS
NSE–5
Technical Documentation
Table 1. System connector signals.
(continued)
12 FBUS_RX Bottom & IBI connectors Serial data in. 13 FBUS_TX Bottom & IBI connectors Serial data out. 14 L_GND Bottom charger contacts Logic and charging ground.
DescriptionFunctionNamePin

DC Connector

The electrical specifications in NO TAG shows the idle voltage produced by the acceptable chargers at the DC connector input. The absolute maximum input voltage is 18V due to the transient suppressor that is protecting the charger input.

Slide Microphone

The microphone is connected to the slide by means of springs it has a microphone input level specified in NO TAG. The microphone requires bias current to operate which is generated by the COBBA_GJP ASIC.

Slide Connector

An Interrupt signal to MAD2PR1 determines whether the slide is in an open or closed position.

Roller Interface

A mechanical solution is implemented and three interrupts are fed to the MAD2PR1

Keys and Keymatrix

0–9, *, #, send, end, soft_1, soft_2, power_on_off, roller_push,

Headset Connector

The external headset device is connected to the system connector, from which the signals are routed to COBBA_GJP microphone inputs and earphone outputs.
Issue 1 07/99
Page 2 – 7
NSE–5
aud u
(from
y
accessory
de ec
)
NA
MICN
mouted
in slide
PAMS
Technical Documentation
Table 2. Mic signals of the system connector
0 2 12.5 mV Connected to COBBA_GJP MIC2N
input. The maximum value corre­sponds to1 kHz, 0 dBmO network level with input amplifier gain set to 32 dB. typical value is maximum value – 16 dB.
NA
MICP
0 2 12.5 mV Connected to COBBA_GJP MIC2P
mounted
in slide
Pin IB-
Name Function Min Typ Max Unit Description
pin
10 Yes XEAR Analog
audio out­put
phone to accessor
input. The maximum value corre­sponds to1 kHz, 0 dBmO network level with input amplifier gain set to 32 dB. typical value is maximum value – 16 dB.
Table 3. System/IBI connector
47 W Output AC impedance (ref.
GND) resistor tol. is 5%
10 mF Series output capacitance
16 300 W Load AC impedance to GND:
Headset
4.7 10 kW Load AC impedance to SGND: External accessory.
Page 2 – 8
Accessory detection (fom ac­cessory to p
phone
1.0 V
Max. output level. No load
p–p
100 kW Resistance to accessory
ground (in accessory)
0.5 V DC Voltage (ref. SGND). Ex­ternal accessory
6.8 kW Load DC resistance to SGND. External accessory
0 0.2 V DC Voltage (ref. SGND).
Headset with closed switch
16 1500 W Load DC resistance to
SGND. Headset with closed switch
2.8 V DC Voltage (ref. SGND). No accessory, or headset with open switch
47 kW Pull–up resistor to VBB in
phone
Issue 1 07/99
PAMS
micro (from ac
hone)
hone to
accessory to
a
Separated
hone
y)
ry)
NSE–5
Technical Documentation
Table 3. System/IBI connector (continued)
Pin
pin
8 Yes XMIC Analog
audio in­put (from ac­cessory to phone)
Headset phone in-
put cessory to
p
DescriptionUnitMaxTypMinFunctionNameIB-
2.0 2.2 kW Input AC impedance 100 W Accessory source AC imped-
ance
1 V
Maximum signal level
p–p
2.0 2.2 kW Input AC impedance
-
-
2.5 kW Headset source AC imped­ance
-
­100 600 mA Bias current
200 mV-
Maximum signal level
p–p
Accessory mute. Voltage compared to SGND. (from phone to accesso­ry)
Headset detection (from accessory to phone) (NO TAG)
9 Yes SGND Audio sig-
nal ground.
p from phone
GND
(from p
phone to accesso­r
2.5 2.9 V Not muted
0 1.55 V Muted, without headset
1.6 2.0 2.4 V Comparator reference in ac­cessory
1.47 2.9 V No headset (ref. SGND). 0 1.33 V Headset connected (ref.
SGND).
49 kW Pull–up resistor to VBB in
phone
47 W Output AC impedance (ref.
GND)
10 mF Series output capacitance
380 W Resistance to phone ground
(DC) (in phone)
100 kW Resistance to accessory
ground (in accessory)
–0.2 +0.2 V DC voltage compared to
phone GND
–5 +5 V DC voltage compared to ac-
cessory GND
Issue 1 07/99
Page 2 – 9
NSE–5
da a u
y)
ry) (from ac
y
al bus
K
Flash seri-
cessory to
PAMS
Technical Documentation
Table 3. System/IBI connector (continued)
Pin
pin
13 Yes FBUS
_TX
_
12 Yes FBUS
_RX data in
Serial data out (from phone to accesso­r
Serial
-
­cessory to phone)
DescriptionUnitMaxTypMinFunctionNameIB-
0.1 0.8 V Output low voltage @ IOL 4 mA (ref. GND)
1.7 2.8 V Output high voltage @ IOH 4 mA (ref. GND)
47 kW Pull–up resistor in phone
220 kW Pull–down resistor in acces-
sory
47 100 W Serial (EMI filtering) resistor
in phone
150 pF Cable capacitance
1 ms Rise/Fall time
0 0.8 V Input low voltage (ref. GND)
2.0 2.8 V Input high voltage (ref. GND)
220 kW Pull–down resistor in phone
47 kW Pull–up resistor in accessory
2.2 kW Serial (EMI filtering) resistor in accessory
11 Yes MBUS Bidirec-
tional seri-
FLAS H_CL
al data clock (from ac-
phone)
150 pF Cable capacitance
2 ms Rise/Fall time @ 115kbits/s 1 ms Rise/Fall time @ 230kbits/s
0 0.8 V Input low voltage (ref. GND)
2.0 2.8 V Input high voltage (ref. GND) 0 0.8 V Output low voltage @ IOL
-
4 mA (ref. GND)
2.1 2.9 V Output high voltage @ IOH
100 mA (ref. GND)
4.7 kW Pull–up resistor in phone
220 kW Pull–down resistor in acces-
sory
100 W Serial (EMI filtering) resistor
in phone
200 pF Cable capacitance
5 ms Rise/Fall time @ 9600 bits/s
Page 2 – 10
Issue 1 07/99
PAMS
CLc
,
(from ac
hone)
(
NSE–5
Technical Documentation
Table 3. System/IBI connector (continued)
Pin
pin
2,
14
L_GNDLogic and
charging ground (sepa­rated from phone GND by EMI com­ponents)
4,5 CHRG
_CTR
_
Charger control (from phone to accessory
DescriptionUnitMaxTypMinFunctionNameIB-
0 1.0 A Ground current
0 0.8 V Output low voltage @ IOL
20 mA
1.7 2.9 V Output high voltage @ IOH
20 mA
32 37 Hz PWM frequency
1,3 VIN Fast
charger cessory to
phone)
Slow charger (fom ac­cessory to phone)
1 99 % PWM duty cycle
20 kW Serial (EMI filtering) resistor
in phone
30 kW Pull–down resistor in phone 0 8.5 V Charging voltage. 0 0.85 A Charging current.
-
­100 mV-
100 mV-
100 mV-
200 mV-
0 15 V
p–p
p–p
p–p
p–p
pea
k
Ripple voltage @ f =
20...200Hz, load = 3 & 10 W Ripple voltage @ f = 0.2...30
kHz, load = 3 & 10 W Ripple voltage @ f > 30 kHz,
load = 3 & 10 W Total ripple voltage @ f > 20
Hz, load = 3 & 10 W Charging voltage (max. = un-
loaded, +20 % overvoltage in mains).
0 1.0 A
Charging current (max. =
pea
shorted, +20 % overvoltage
k
in mains).
Issue 1 07/99
Page 2 – 11
NSE–5 System Module
PAMS
Technical Documentation
Baseband
HOOKDET
MAD
HEADDET
CCONT
EAD
HF
COBBA –GJP
AUX OUT
PD2
AGND
10
10k
100n
AGND
10u
27p
100n
1u
220k
220k
VBB VBB
2k2 47k
2k2
VBB
47k
100MHz
33R
AGND
47R
XEAR
LGND
PC–Board
R01
SW01
+
+
+
C01
C03
C02
HFCM
MIC1N
MIC1P
MIC3N
MIC3P
AGND
100n
100n
AGND
2k2
2k2
100R
100R
XMIC
SGND
L01
Z01
100n
100n
AGND AGND AGND
Note 1: Grey resistor are in the border of ”EMI clean” and ”dirty” areas. Note 2: AGND is connected directly to the GND on PCB close to HF parts. Note 3: ESD protection diodes are not shown.
Figure 3. Combined headset, system connector audio signals
27p
27p
330R
R01= 100R C01=33uF C02=1000pF C03=22pF L01=MMZ2012Y6 01BT/TDK
Page 2 – 12
Issue 1 07/99
PAMS
NSE–5
Technical Documentation

Battery Connector

The BSI contact on the battery connector is used to detect when the battery is removed with power switched on enabling the SIM card operation to shut down first. The BSI contact in the battery pack should be shorter than the supply power contacts to give enough time for the SIM shut down.
12
34
No metal in these areas! old connector type
B side view.
phone
Vibra Alerting Device
A vibra alerting device is used to give a silent signal to the user of an incoming call it is mounted in the B–cover. A special battery pack contains a vibra motor. The vibra is controlled with one PWM signal by the MAD2PR1 via the BTEMP battery terminal.
Figure 4. Battery connector locations
+VBATT
1
BSI
2
BTEMP
3
–VBATT
4
Issue 1 07/99
Page 2 – 13
NSE–5 System Module

SIM Card Connector

The SIM card connector is located on the PCB. Only small SIM cards are supported.
PAMS
Technical Documentation
321
456
Figure 5. Sim Card Reader Ultra phone
Table 4. SIM Connector Electrical Specifications
Pin Name Parameter Min Typ Max Unit Notes
1 GND GND 0 0 V Ground 2 VSIM 5V SIM
Card
4.8
2.8
5.0
3.0
5.2
3.2
V Supply voltage
3V SIM
Card
3 DATA 5V Vin/Vout
3V Vin/Vout
4 SIMRS
T
5V SIM
Card
4.0 0
2.8 0
4.0
2.8
”1” ”0” ”1” ”0”
”1” ”1”
VSIM
0.5
VSIM
0.5
VSIM VSIM
V SIM data
Trise/Tfall max 1us
V SIM reset
3V SIM
Card
5 SIMCLKFrequency
3.25
MHz
SIM clock
Trise/Tfall
6 VPP 5V SIM
Card
3V SIM
Card
VSIM supply voltages are specified to meet type approval requirements regardless the tolerances in components.
Page 2 – 14
4.8
2.8
5.0
3.0
25
5.2
3.2
ns
V Programming voltage
pin6 and pin2 tied to-
gether
Issue 1 07/99
PAMS
NSE–5
Technical Documentation

Infrared Transceiver Module

An infrared transceiver module is designed as a substitute for hardwired connections between the phone and a PC. The infrared transceiver module is a stand alone component. In DCT3 the module is located inside and at the top of the phone.
The Rx and Tx is connected to the FBUS via a dual bus buffer. The module and buffer is activated from the MAD2_pr1 with a pull up on IRON. The Accif in MAD2_pr1 performs pulse encoding and shaping for transmitted data pulses and detection and decoding for received data pulses.
The data is transferred over the IR link using serial FBUS data at speeds
9.6, 19.2, 38.4, 57.6 or 115.2 kbits/s, which leads to maximum throughput of 92.160 kbits/s. The used IR module complies with the IrDA SIR specification (Infra Red Data Association), which is based on the HP SIR (Hewlett–Packard‘s Serial Infra Red) consept.
The Following figure gives an example of IR transmission pulses. In IR transmission a light pulse correspondes to 0–bit and a ”dark pulse” correspondes to 1–bit.
constant pulse
IR TX
UART TX
startbit stopbit1 0100110
Figure 6. IR transmission frame – example
The FBUS cannot be used for external accessory communication, when the infrared mode is selected. Infrared communication reserves the FBUS completely.
Issue 1 07/99
Page 2 – 15
NSE–5 System Module

Real Time Clock

Requirements for a real time clock implementation are a basic clock (hours and minutes), a calender and a timer with alarm and power on/off –function and miscellaneous calls. The RTC will contain only the time base and the alarm timer but all other functions (e.g. calendar) will be implemented with the MCU software. The RTC needs a power backup to keep the clock running when the phone battery is disconnected. The backup power is supplied from a rechargable polyacene battery that can keep the clock running for approximately ten minutes. If the backup has expired, the RTC clock restarts after the main battery is connected. The CCONT resets the MCU in approx 62ms and the 32kHz source is settled (after approx. 1s).
The CCONT is an ideal place for an integrated real time clock as the asic already contains the power up/down functions and a sleep control with the 32kHz sleep clock, which is always running when the phone battery is connected. This sleep clock is used for a time source to a RTC block.
PAMS
Technical Documentation
Page 2 – 16
Issue 1 07/99
PAMS
NSE–5
Technical Documentation

Baseband Module

Technical Summary

The baseband architecture is basically similar to DCT3 GSM phones. DCT3.5 differs from DCT3 in the single pcb koncept and the seriel interface between MAD2PR1 and COBBA_GJP and MAD2PR1 and CCONT. In DCT3.5 the MCU, the system specific ASIC and the DSP are intergrated into one ASIC, called the MAD2PR1 chip, which takes care of all the signal processing and operation controlling tasks of the phone.
The baseband architecture supports a power saving function called ”sleep mode”. This sleep mode shuts off the VCTCXO, which is used as system clock source for both RF and baseband. During the sleep mode the system runs from a 32 kHz crystal. The phone is waken up by a timer running from this 32 kHz clock supply. The sleeping time is determined by some network parameters. When the sleep mode is entered both the MCU and the DSP are in standby mode and the normal VCTCXO clock has been switched off.
The battery voltage range in DCT3 family is 3.0V to 4.5V depending on the battery charge and used cell type (Li–Ion or NiMH). Because of the lower battery voltage the baseband supply voltage is lowered to a nominal of 2.8V.
The baseband is running from a 2.8V power rail which is supplied by a power controling asic (CCONT). In the CCONT there are seven individually controlled regulator outputs for the RF section, one 2.8V output for the baseband plus a core voltage for MAD2PR1. However this is not used in NSE–5 because the chipset supports 2.8Volts. In addition there is one +5V power supply output(V5V). TheCCONTalso contains a SIM interface which supports both 3V and 5V SIM cards. A real time clock function is integrated into the CCONT which utilises the same 32KHz clock supply as the sleep clock. A backup power supply is provided for the RTC which keeps the real time clock running when the main battery is removed. The backup power supply is a rechargeable polyacene battery with a backup time of ten minutes.
The interface between the baseband and the RF section is handled by a specific asic. The COBBA_GJP asic provides A/D and D/A conversion of the in–phase and quadrature receive and transmit signal paths and also A/D and D/A conversions of received and transmitted audio signals to and from the UI parts. Data transmission between the COBBA_GJP and the MAD2PR1 is implemented using serial connections. Digital speech processing is handled by the MAD2PR1 asic. The COBBA_GJP asic is a dual supply voltage circuit, the digital parts are running from the baseband supply VBB and the analog parts are running from the analog supply VCOBBA (VR6).
Issue 1 07/99
Page 2 – 17
NSE–5 System Module
PAMS
Technical Documentation
LCD
vibra motor
IR
roller
TX/RX SIGNALS
COBBA_GJP
AUDIOLINES
BASEBAND
COBBA SUPPLY
MAD2pr1 +
MEMORIES
RF SUPPLIES
CCONT
BB SUPPLY
core voltage
SYSCON
CHAPS
PA SUPPLY
SIM
32kHz CLK
SLEEP CLOCK
VBAT
13MHz CLK
SYSTEM CLOCK
BATTERY NiMH LiIon

Power Distribution

In normal operation the baseband is powered from the phone‘s battery. The battery consists of one Lithium–Ion cell. There is also a possibility to use batteries consisting of three Nickel Metal Hydride cells or one Solid state cell. An external charger can be used for recharging the battery and supplying power to the phone. The charger can be either so called fast charger, which can deliver supply current up to 1600 mA or a standard charger that can deliver approx 300 mA.
The CCONT provides voltage to the circuitry excluding the RF PA, LCD and IrDa which are supplied via a continuous power rail direct from the battery. The RF PA module has a cutoff voltage of 3.1V. The battery
note)
feeds power directly to several parts of the system: CCONT, PA and UI circuitry (display lights, buzzer). The four dedicated control lines, RxPwr, TxPwr, SIMCardPwr and SynthPwr from MAD2 to CCONT have changed to a serial control signal between MAD2PR1 and CCONT. Figure 8 shows a simplified block diagram of the power distribution.
Figure 7. Block Diagram
(see
Note : In battery terms there is VBATT and VB, the difference is a filter (coil and capacitors)
Page 2 – 18
Issue 1 07/99
PAMS
NSE–5
Technical Documentation
The power management circuitry provides protection against overvoltages, charger failures and pirate chargers etc. that could cause damage to the phone.
PA SUPPLY
LCD MODULE
VBB
COBBA_GJP
VBAT
MEMORIES
VCOBBA
MAD2pr1
+
RF SUPPLIES
CCONT
PWRONX
CNTVR
VBB
core voltage
PURX
POWER MGMT
VSIM
VBAT
PWM
SIM
RTC
BACKUP
sram
BATTERY
BASEBAND
CONNECTOR
VIN
Figure 8. Baseband power distribution
The heart of the power distrubution is the CCONT. It includes all the voltage regulators and feeds the power to most of the system. The whole baseband is powered from the same regulator which provides 2.8V baseband supply VBB. The baseband regulator is active always when the phone is powered on. The core baseband regulator feeds, amongst others, MAD2PR1 and memories, COBBA_GJP digital parts and the LCD driver in the UI section. COBBA_GJP analog parts are powered from a dedicated 2.8V supply VCOBBA by the CCONT. There is a separate regulator for a SIM card which is selectable between 3V and 5V and controlled by the SIMPwr line from MAD2PR1 to CCONT.
The CCONT contains a real time clock function, which is powered from a RTC backup when the main battery is disconnected. The RTC backup is rechargable polyacene battery.
CCONT includes also six additional 2.8V regulators providing power to the RF section. These regulators can be controlled by the seriel interface from MAD2PR1 ie RF regulator control register in CCONT which MAD2PR1 can update.
Issue 1 07/99
Page 2 – 19
NSE–5 System Module
CCONT supply a core voltage to the MAD2PR1. The core voltage is by default 1.975V.
RAM backup as in PDC3 phone. CCONT generates also a 1.5 V reference voltage VREF to COBBA_GJP,
SUMMA. The VREF voltage is also used as a reference to some of the CCONT A/D converters and as a reference for al the other regulators.
In additon to the above mentioned signals MAD2PR1 includes also TXP control signal which goes to SUMMA power control block and to the power amplifier. The transmitter power control TXC is led from COBBA_GJP to SUMMA.
PAMS
Technical Documentation
Table 5. CCONT current output capability/ nominal voltage
Regulator Maximum
Unit Vout Unit Notes
current
VR1 25 mA 2.8 V VCTCXO VR2 25 mA 2.8 V CRFU Rx VR3/switch 50 mA 2.8 V PLL VSYN VR4 90 mA 2.8 V VCO VSYN VR5 80 mA 2.8 V PLUSSA Rx VR6 100 mA 2.8 V COBBA_GJP VR7 150 mA 2.8 V PLUSSA+CRFU Tx VBB ON
VBB SLEEP VSIM 30 mA 3.0/
125 1
mA mA
2.8
2.8
5.0
V V
V V
current limit 250mA current limit 5mA
VSIM outout voltage selectable
V_core 50 mA 1.975 V programmable core sup-
ply for cpu/dsp/sys asic dV=225mV
V_RAM_bck/ VR3
50 mA 2.8 V nomal mode 2.8V. 2.0V
for data retention.
VSIM must fullfill the GSM11.10 current spike requirements. VSIM and V5V can give a total of 30 mA.
Page 2 – 20
Issue 1 07/99
PAMS
NSE–5
Technical Documentation

Power Up

The baseband is powered up by:
1. Pressing the power key, that generates a PWRONX interrupt signal from the power key to the CCONT, which starts the pow­er up procedure.
2. Connecting a charger to the phone. The CCONT recognizes the charger from the VCHAR voltage and starts the power up procedure.
3. A RTC interrupt. If the real time clock is set to alarm and the phone is switched off, the RTC generates an interrupt signal, when the alarm is gone off. The RTC interrupt signal is con­nected to the PWRONX line to give a power on signal to the CCONT just like the power key.
4. A battery interrupt. Intelligent battery packs have a possibility to power up the phone. When the battery gives a short (10ms) voltage pulse through the BTEMP pin, the CCONT wakes up and starts the power on procedure.
Power up with a charger
When the charger is connected CCONT will switch on the CCONT digital voltage as soon as the battery voltage exeeds 3.0V. The reset for CCONT’s digital parts is released when the operating voltage is stabilized ( 50 us from switching on the voltages). Operating voltage for VCXO is also switched on. The counter in CCONT digital section will keep MAD in reset for 62 ms (PURX) to make sure that the clock provided by VCXO is stable. After this delay MAD reset is relased, and VCXO –control (SLEEPX) is given to MAD. The diagram assumes empty battery, but the situation would be the same with full battery:
When the phone is powered up with an empty battery pack using the standard charger, the charger may not supply enough current for standard powerup procedure and the powerup must be delayed.
Power Up With The Power Switch (PWRONX)
When the power on switch is pressed the PWRONX signal will go low. CCONT will switch on the CCONT digital section and VCXO as was the case with the charger driven power up. If PWRONX is low when the 64 ms delay expires, PURX is released and SLEEPX control goes to MAD. If PWRONX is not low when 64 ms expires, PURX will not be released, and CCONT will go to power off ( digital section will send power off signal to analog parts)
Issue 1 07/99
Page 2 – 21
NSE–5 System Module
PAMS
Technical Documentation
SLEEPX
PURX
CCPURX
PWRONX
VR1,VR6 VBB (2.8V)
Vchar
12 3
1:Power switch pressed ==> Digital voltages on in CCONT (VBB) 2: CCONT digital reset released. VCXO turned on 3: 62 ms delay to see if power switch is still pressed.
Power Up by RTC
RTC ( internal in CCONT) can power the phone up by changing RTCPwr to logical ”1”. RTCPwr is an internal signal from the CCONT digital section.
Power Up by IBI
IBI can power CCONT up by sending a short pulse to logical ”1”. RTCPwr is an internal signal from the CCONT digital section.
Acting Dead
If the phone is off when the charger is connected, the phone is powered on but enters a state called ”acting dead”. To the user the phone acts as if it was switched off. A battery charging alert is given and/or a battery charging indication on the display is shown to acknowledge the user that the battery is being charged.
Active Mode
In the active mode the phone is in normal operation, scanning for channels, listening to a base station, transmitting and processing information. All the CCONT regulators are operating. There are several substates in the active mode depending on if the phone is in burst reception, burst transmission, if DSP is working etc..
Page 2 – 22
Issue 1 07/99
PAMS
NSE–5
Technical Documentation
Sleep Mode
In the sleep mode all the regulators except the baseband VBB, Vcore and the SIM card VSIM regulators are off. Sleep mode is activated by the MAD2PR1 after MCU and DSP clocks have been switched off. The voltage regulators for the RF section are switched off and the VCXO power control, VCXOPwr is set low. In this state only the 32 kHz sleep clock oscillator in CCONT is running. The flash memory power down input is connected to the VCXO power control, so that the flash is deep powered down during sleep mode.
The sleep mode is exited either by the expiration of a sleep clock counter in the MAD2PR1 or by some external interrupt, generated by a charger connection, key press, headset connection etc. The MAD2PR1 starts the wake up sequence and sets the VCXOPwr control high. After VCXO settling time other regulators and clocks are enabled for active mode.
If the battery pack is disconnect during the sleep mode, the CCONT shall power down the SIM in the sleep mode as there is no time to wake up the MCU.
Battery charging
MAD
VBAT
MAD
CCONTINT
CCONT
The electrical specifications give the idle voltages produced by the acceptable chargers at the DC connector input. The absolute maximum input voltage is 30V due to the transient suppressor that is protecting the charger input. At phone end there is no difference between a plug–in charger or a desktop charger. The DC–jack pins and bottom connector charging pads are connected together inside the phone.
0R22
PWM_OUT
ICHAR
VCHAR
LIM VOUT
CHAPS
RSENSE
PWM
VCH
GND
22k
1n
TRANSCEIVER
27pf
47k
33R/100MHz
1u
30V
1.5A
EMI
VIN
CHRG_CTRL
CHARGER
NOT IN ACP–7/8
GND
Issue 1 07/99
47k
Figure 9. Battery Charging
L_GND
Page 2 – 23
NSE–5 System Module
Startup Charging
When a charger is connected, the CHAPS is supplying a startup current minimum of 130mA to the phone. The startup current provides initial charging to a phone with an empty battery. Startup circuit charges the battery until the battery voltage level is reaches 3.0V (+/– 0.1V) and the CCONT releases the PURX reset signal and program execution starts. Charging mode is changed from startup charging to PWM charging that is controlled by the MCU software. If the battery voltage reaches 3.55V (3.75V maximum) before the program has taken control over the charging, the startup current is switched off. The startup current is switched on again when the battery voltage is sunken 100mV (nominal).
Parameter Symbol Min Typ Max Unit
PAMS
Technical Documentation
Table 6.
VOUT Start– up mode cutoff limit Vstart 3.45 3.55 3.75 V
VOUT Start– up mode hysteresis
NOTE: Cout = 4.7 uF
Start–up regulator output current
VOUT = 0V ... Vstart
Vstarthys 80 100 200 mV
Istart 130 165 200 mA
Battery Overvoltage Protection
Output overvoltage protection is used to protect phone from damage. This function is also used to define the protection cutoff voltage for different battery types (Li or Ni). The power switch is immediately turned OFF if the voltage in VOUT rises above the selected limit VLIM1 or VLIM2.
Table 7.
Parameter Symbol LIM input Min Typ Max Unit
Output voltage cutoff limit
(during transmission or Li–
battery)
Output voltage cutoff limit
(no transmission or Ni–bat-
tery)
VLIM1 LOW 4.4 4.6 4.8 V
VLIM2 HIGH 4.8 5.0 5.2 V
The voltage limit (VLIM1 or VLIM2) is selected by logic LOW or logic HIGH on the CHAPS (N101) LIM– input pin. Default value is lower limit VLIM1.
When the switch in output overvoltage situation has once turned OFF, it stays OFF until the the battery voltage falls below VLIM1 (or VLIM2) and PWM = LOW is detected. The switch can be turned on again by setting PWM = HIGH.
Page 2 – 24
Issue 1 07/99
PAMS
NSE–5
Technical Documentation
VCH
VCH<VOUT
VOUT
VLIM1 or VLIM2
t
t
SWITCH
PWM (32Hz)
ON OFF
Battery Removal During Charging
Output overvoltage protection is also needed in case the main battery is removed when charger connected or charger is connected before the battery is connected to the phone.
With a charger connected, if VOUT exceeds VLIM1 (or VLIM2), CHAPS turns switch OFF until the charger input has sunken below Vpor (nominal
3.0V, maximum 3.4V). MCU software will stop the charging (turn off PWM) when it detects that battery has been removed. The CHAPS remains in protection state as long as PWM stays HIGH after the output overvoltage situation has occured.
ON
Issue 1 07/99
Page 2 – 25
Loading...
+ 57 hidden pages