Nihon EC31QS04 Schematic [ru]

SBD Type
FEATURES
FEATURES
FEATURESFEATURES * Miniature Size,Surface Mount Device * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly
Type :
TypeType
: EC31QS04
: :
EC31QS04
EC31QS04EC31QS04
OUTLINE DRAWING
Maximum Ratings Approx Net Weight:0.06g
Rating Symbol EC31QS04 Unit
Average Rectified Output Current IO
RMS Forward Current Surge Forward Current I Operating JunctionTemperature Range Tjw -40 to +150
Storage Temperature Range T
V
RRM
1.3
Ta=36 °C *1 Tl=81 °C
3.0 Tl:Lead Temperature
I
4.71
F(RMS)
60
FSM
-40 to +150
stg
50Hz Half Sine Wave,1cycle Non-repetitive
40
Electrical Thermal Characteristics
Characteristics Symbol Conditions Min. Typ. Max. Unit
Peak Reverse Current Peak Forward Voltage
Junction to Ambient R th
Resistance
*1 Alumina Substrate Mounted
Junction to Lead R th
Soldering Lands=2x2mm,Both Sides
I
V
Tj= 25°C, V
RM
Tj= 25°C, I
FM
(j-a)
- - - 23
(j-l)
= V
RM
= 3.0A
FM
*1 - - 108 Thermal
RRM
V
50Hz Half Sine Wave Resistive Load
A
A A
°C °C
- - 3 mA
- - 0.55 V /W
°C
EC31QS_ OUTLINE DRAWING (Dimensions in mm)
FORWARD CURRENT VS. VOLTAGE
20
10
5
2
1
0.5
INSTANTANEOUS FORWARD CURRENT (A)
0.2 0 0.2 0.4 0.6 0.8 1.0 1.2
INSTANTANEOUS FORWARD VOLTAGE (V)
EC31QS04
Tj=25°C
Tj=150°C
180°
CONDUCTION ANGLE
θ
AVERAGE FORWARD POWER DISSIPATION (W)
AVERAGE FORWARD POWER DISSIPATION
3.0
2.5
2.0
1.5
RECT 60°
HALF SINE WAVE
RECT 120°
RECT 180°
1.0
0.5
0
0 1 2 3 4 5
AVERAGE FORWARD CURRENT (A)
EC31QS04
D.C.
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