PRELIMINARY DATA SHEET
GaAs INTEGRATED CIRCUIT
µµµµ
PG2106TB,
µ
µ
PG2110TB
µµ
L-BAND PA DRIVER AMPLIFIER
DESCRIPTION
The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were
developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with
3.0 V, having the high gain and low distortion. The µPG2106TB is for 800 MHz band application, and the
PG2110TB is for 1.5 GHz band application.
µ
FEATURES
DD1
• Low operation voltage : V
RF
•f
• Low distortion : P
• Low operation current : IDD = 25 mA TYP. @VDD = 3.0 V, P
• Variable gain control function :∆G = 40 dB TYP. @V
• 6-pin super minimold package
: 889 to 960 MHz, 1429 to 1453 MHz@P
External input and output matching
External input and output matching
External input and output matching
DD2
= V
= 3.0 V
adj1
= −60 dBc TYP. @VDD = 3.0 V, P
AGC
= 0.5 to 2.5 V
out
= +8 dBm
out
= +8 dBm, V
out
= +8 dBm, V
AGC
AGC
= 2.5 V
= 2.5 V
APPLICATION
• Digital Cellular : PDC, IS-136 etc.
ORDERING INFORMATION (PLAN)
Part Number Package Supplying Form
µ
PG2106TB-E3
µ
PG2110TB-E3
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample
order:
ABSOLUTE MAXIMUM RATINGS (TA = +25
Supply Voltage V
AGC Control Voltage V
Input Power P
Total Power Dissipat i on P
Operating Ambient Temperature T
Storage Temperature T
Mounted on a 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, T
Note
Caution The IC must be handled with care to prevent static discharge because its circuit composed of
GaAs HJ-FET.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
6-pin super minimold Carrier tape width is 8 mm.
Qty 3 kp/reel.
PG2106TB, µPG2110TB)
µ
C)
°°°°
Parameter Symbol Ratings Unit
DD1
DD2
, V
AGC
in
tot
A
stg
6.0 V
6.0 V
−
8dBm
Note
140
−
30 to +90
−
35 to +150
A
= +85 °C
mW
°
C
°
C
Document No. P14318EJ1V0DS00 (1st edition)
Date Published October 1999 N CP(K)
Printed in Japan
©
1999
[µPG2106TB]
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
µµµµ
PG2106TB,
µµµµ
PG2110TB
Pin No. Connection Pin No. Connection
1V
DD1
4V
AGC
2 GND 5 GND
3V
DD2
& OUT 6 IN
123
G1V
654
Top View Bottom View Top View
3
2
1
4
5
6
4
5
6
RECOMMENDED OPERATING CONDITIONS (TA = +25
Parameter Symbol MIN. TYP. MAX. Unit
DD1
Supply Voltage V
Input Power P
AGC Control Voltage V
, V
AGC
DD2
in
+2.7 +3.0 +3.3 V
3
2
1
°°°°
C)
3
2
1
4
5
6
−−18−
0
−
10 dBm
2.5 V
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, TA = +25
C, V
°°°°
DD1
= V
DD2
= +3.0 V,
/4DQPSK modulated signal input, External
ππππ
input and output matching)
Parameter Symbol Test Conditi ons MIN. TYP. MAX. Unit
Operating Frequency f 889
Power Gain G
Total Current I
Adjacent Channel
P
Power Leakage 1
Adjacent Channel
P
Power Leakage 2
Variable Gain Range
AGC Control Current I
p
Pin = −18 dBm, V
DD
adj1
adj2
GP
∆
AGC
out
P
out
P
f = ±50 kHz, 21 kHz Band Width
∆
out
P
f = ±100 kHz, 21 kHz Band Width
∆
in
= −18 dBm, V
AGC
V
= +8 dBm, V
= +8 dBm, V
= +8 dBm, V
= 0.5 to 2.5 V
AGC
= 2.5 V 26 30
AGC
= 2.5 V
AGC
= 2.5 V
AGC
= 2.5 V
AGC
= 0.5 to 2.5 V 35 40
−
−−60−
−−70−
−
−
25 35 mA
200 500
960 MHz
−
55
dB
dBc
65
−
dB
µ
A
2
Preliminary Data Sheet P14318EJ1V0DS00
[µPG2110TB]
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
Pin No. Connection Pin No. Connection
µµµµ
PG2106TB,
123
µµµµ
PG2110TB
1V
DD1
4V
AGC
G1Y
2 GND 5 GND
3V
DD2
& OUT 6 IN
654
Top View Bottom View Top View
3
2
1
4
5
6
4
5
6
RECOMMENDED OPERATING CONDITIONS (TA = +25
Parameter Symbol MIN. TYP. MAX. Unit
DD1
Supply Voltage V
Input Power P
AGC Control Voltage V
, V
in
AGC
DD2
+2.7 +3.0 +3.3 V
3
2
1
°°°°
C)
3
2
1
4
5
6
−−18−
0
−
10 dBm
2.5 V
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, TA = +25
C, V
°°°°
DD1
= V
DD2
= +3.0 V,
/4DQPSK modulated signal input, External
ππππ
input and output matching)
Parameter Symbol Test Conditi ons MIN. TYP. MAX. Unit
Operating Frequency f 1429
Power Gain G
Total Current I
Adjacent Channel
P
Power Leakage 1
Adjacent Channel
P
Power Leakage 2
Variable Gain Range
AGC Control Current I
p
Pin = −18 dBm, V
DD
adj1
adj2
GP
∆
AGC
out
P
out
P
f = ±50 kHz, 21 kHz Band Width
∆
out
P
f = ±100 kHz, 21 kHz Band Width
∆
in
= −18 dBm, V
AGC
V
= +8 dBm, V
= +8 dBm, V
= +8 dBm, V
= 0.5 to 2.5 V
Preliminary Data Sheet P14318EJ1V0DS00
AGC
= 2.5 V 24 27
AGC
= 2.5 V
AGC
= 2.5 V
AGC
= 2.5 V
AGC
= 0.5 to 2.5 V 35 40
−
−−60−
−−70−
−
−
25 35 mA
200 500
1453 MHz
−
55
65
−
dB
dBc
dB
µ
A
3
[µPG2106TB]
EVALUATION CIRCUIT (Preliminary)
DD1
DD2
= V
V
= +3.0 V, f = 925 MHz
DD1 VDD2
V
µµµµ
PG2106TB,
µµµµ
PG2110TB
C1
L4
IN
Using the NEC Evaluation Board (Preliminary)
Symbol Value
C5
L3
L1
123
G1V
654
L2
C4
C3
OUT
C2
R1
VAGC
C1, C3 1 000 pF
C2 100 pF
C4 27 pF
C5 2 pF
L1 10 nH
L2 39 nH
L3 27 nH
L4 33 nH
R1 1 k
4
Ω
Preliminary Data Sheet P14318EJ1V0DS00