NEC UPD3739D Datasheet

DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD3739
5000 PIXELS CCD LINEAR IMAGE SENSOR
The µPD3739 is a CCD (Charge Coupled Device) linear image sensor which changes optical images to electrical
signal.
The µPD3739 is a 2-output type CCD sensor with 2 rows of high-speed charge transfer register, which transfers
the photo signal electrons of 5000 pixels separately in odd and even pixels. It is developed as the higher sensitivity
µ
version of the previous device, the high-end business facsimiles.

FEATURES

• Valid photocell : 5000 pixels
• Photocell’s pitch : 7
• High sensitivity : 9.0 V/lx·s TYP. (Light source: Daylight color fluorescent lamp)
• Low image lag : 1 % MAX.
• Peak response wavelength : 550 nm (green)
• Resolution : 16 dot/mm (400 dpi) A3 (297 × 420 mm) size (shorter side)
• Data rate : 40 MHz MAX. (20 MHz/1 output)
• Output type : 2 outputs out of phase (2 outputs in phase also supported)
• Power supply : +12 V
• Drive clock level : CMOS output under 5 V operation
• On-chip circuit : Automatic
• Pin assign : Functional compatible with the µPD35H71A
PD35H71A. It is suitable for 400 dpi/A3 high-speed digital copiers, OCRs and
µ
m
φ
R level adjuster

ORDERING INFORMATION

Part Number Package
µ
PD3739D CCD linear image sensor 22-pin ceramic DIP (CERDIP) (400 mil)
The information in this document is subject to change without notice.
Document No. S12744EJ1V0DS00 (1st edition) Date Published September 1997 N Printed in Japan
©
1997

COMPARISON CHART

µ
PD3739
Item
PIN CONFIGURATION Pin 1 GND DGND
Pin 2 NC TEST Pin 4 NC VDD Pin 11 NC VSUB Pin 21 NC AGND Pin 22 NC DGND
RECOMMENDED OPERATING CONDITIONS pin external capacitor (pF)
ELECTRICAL CHARACTERISTICS
TIMING CHART In phase outputs operating Out of phase outputs
DEFINITIONS OF CHARACTERISTICS ITEMS
RECOMMENDED SOLDERING CONDITIONS Wave soldering is deleted
Capacitance of reset gate clock
Data rate MIN. (MHz) 0.5 Unspecified Saturation exposure TYP. (Ixs) Photo response TYP. 4 ±5
non-uniformity (%) MAX. 10 ±10 Average dark signal TYP. (mV) Dark signal MIN. 0 –3
non-uniformity (mV) TYP. 4 –1, +3
MAX. 6 +6 Power consumption MAX. (mW) Response (V/
Offset level TYP. (V) 3.5 3.0 Shift register clock pin
capacitance (pF)
Dynamic range TYP. DR1 375 500 (times) DR2 2143 Undefined
Reset feed-through MIN. 0 Unspecified noise (mV) TYP. 400 250
Random noise TYP. (mV) 0.7 Undefined
Photo response non-uniformity Dark signal non-uniformity Absolute value Minus and plus value Random noise Standard deviation of signal Undefined
Ixs)
Note
MIN. 7.2 4.15
TYP. 9.0 5.2
MAX. 10.8 6.25
MIN. 250 400
TYP. 350 500
MAX. 500 800
MAX. 600 500
timing is added operation only Absolute value Minus and plus value
level distribution by scan
µ
PD3739
1000 ± 20 % Unspecified
0.17 0.29
0.3 1.0
400 Unspecified
µ
PD35H71A
Note Due to the changing of measurement conditions, and pin capacitance of each devices is almost the same.
(µPD3739: Power supply = 12 V, µPD35H71A: Power supply = 0 V)
2

BLOCK DIAGRAM

GND 1L2
1
V
OUT
2
20
Automatic R level adjuster
OUT
1
V
3
V
OD
19
φ
φφ φφ
R2 18 17
CCD analog shift register
Transfer gate
5
R1
φφ
6
2L1
D9
. . . . . .
S1
D32
CCD analog shift register
Photocell
S2
Transfer gate
22 12
14 13
S5000
D33
φφ
10
11
S4999
9
21
D34
φ
12 TG
µ
PD3739
3

PIN CONFIGURATION (Top View)

CCD linear image sensor 22-pin ceramic DIP (CERDIP) (400 mil)
µ
PD3739
Ground
No connection
Output signal 1
No connection
Reset gate clock 1
Last stage shift register clock 2
No connection
No connection
Shift register clock 2
Shift register clock 1
No connection
GND
122
221
NC
V
320
OUT
1
419
NC
φ
R1
518
617
φ
2L1
716
NC
815
NC
φ
21
914
φ
11
10 13
11 12
NC
NC
NC
V
OUT
2
V
OD
φ
R2
φ
1L2
NC
NC
φ
22
φ
12
φ
TG
No connection
No connection
Output signal 2
Output drain voltage
Reset gate clock 2
Last stage shift register clock 1
No connection
No connection
Shift register clock 2
Shift register clock 1
Transfer gate clock

PHOTOCELL STRUCTURE DIAGRAM

5 m
µ
Aluminum shield
µ
7 m
2 m
µ
Channel stopper
4
µ
PD3739
ABSOLUTE MAXIMUM RATINGS (TA = +25 ˚C)
Parameter Symbol Ratings Unit Output drain voltage VOD –0.3 to +15 V Shift register clock voltage V Reset gate clock voltage V Transfer gate clock voltage V
φ
1, Vφ2 –0.3 to +15 V
φ
R1, VφR2 –0.3 to +15 V
φ
TG –0.3 to +15 V
Operating ambient temperature TA –25 to +55 ˚C Storage temperature Tstg –40 to +100 ˚C
Caution Exposure to ABSOLUTE MAXIMUM RATINGS for extended periods may affect device reliability;
exceeding the ratings could cause permanent damage. The parameters apply independently.
RECOMMENDED OPERATING CONDITIONS (TA = –25 to +55 ˚C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit Output drain voltage VOD 11.4 12.0 12.6 V Shift register clock high level V Shift register clock low level V Reset gate clock high level Reset gate clock low level V Capacitance of reset gate clock pin external capacitor Transfer gate clock high level V Transfer gate clock low level V Data rate 2f
φ
1H, Vφ2H 4.5 5.0 5.5 V
φ
1L, Vφ2L –0.3 0 +0.5 V
V
φ
R1H, V
φ
R2H
Note 4.5 5.0 5.5 V
φ
R1L, VφR2L Note –0.3 0 +0.5 V
CEXT
φ
R Non-polar type 800 1000 1200 pF
φ
TGH 4.5 5.0 5.5 V
φ
TGL –0.3 0 +0.5 V
φ
R1, 2fφR2 0.5 2 40 MHz
Note Input the reset gate clocks 1 and 2 (φR1, φR2) to pins 5 and 18, respectively, via an input resistor and a capacitor.
Use of a capacitor is indispensable. Refer to APPLICATION CIRCUIT EXAMPLE for the connection method. The reset gate clock high level and low level at the IC pins (after passing through the external capacitor) varies
φ
according to the IC, due to the on-chip automatic
R level adjuster. The recommended operating conditions
of reset gate clocks 1, 2 (φR1, φR2) in the table above are for signals applied to the external capacitor.
φ
Remark
1 in the above tables represents φ11, φ12 and φ1L2. φ2 represents φ21, φ22 and φ2L1.
5
µ

ELECTRICAL CHARACTERISTICS

TA = +25 ˚C, VOD = 12 V, f light source: 3200 K halogen lamp + C-500S (infrared cut filter, t = 1 mm), input signal clock = 5 V
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Saturation voltage Vsat 1.0 1.5 V Saturation exposure SE Daylight color fluorescent lamp 0.17 lx•s Photo response non-uniformity PRNU VOUT = 500 mV 4 10 % Average dark signal ADS Light shielding 0.3 3.0 mV Dark signal non-uniformity DSNU Light shielding 0 4.0 6.0 mV Power consumption PW 200 400 mW Output impedance ZO 0.2 0.5 k Response RF Daylight color fluorescent lamp 7.2 9.0 10.8 V/Ix·s Response peak wavelength 550 nm Image lag IL VOUT = 1 V 0.3 1.0 % Offset level Output fall delay time Register imbalance RI VOUT = 500 mV 0 4.0 % Total transfer efficiency TTE VOUT = 500 mV, data rate = 40 MHz 92 98 % Dynamic range DR1 Vsat/DSNU 375 times
Reset feed-through noise Random noise σ Light shielding 0.7 mV
Note 1
Note 2
φ
1 = 1 MHz, data rate = 2 MHz, storage time = 10 ms
VOS 2.0 3.5 5.0 V td VOUT = 1 V 20 ns
DR2 Vsat/σ 2143 times
Note 1
RFTN Light shielding 0 400 600 mV
p-p
PD3739
Notes 1. Refer to TIMING CHART 2, 5.
2. Typical value when the respective fall times of φ1L2 and φ2L1 are t11’, t41’ and t2’, t32’ (refer to TIMING CHART 2, 5). Note that VOUT1 and VOUT2 are the outputs of the two steps of emitter-follower shown in APPLICATION CIRCUIT EXAMPLE.
6
INPUT PIN CAPACITANCE (TA = +25 °C, VOD = 12 V)
Parameter Symbol Pin name Pin No. MIN. TYP. MAX. Unit
Shift register clock pin capacitance 1 C
Shift register clock pin capacitance 2 C
Last stage shift register clock pin capacitance C
Reset gate clock pin capacitance C
Transfer gate clock pin capacitance C
φ
1
φ
11 10 250 350 500 pF
φ
12 13 250 350 500 pF
φ
2
φ
21 9 250 350 500 pF
φ
22 14 250 350 500 pF
φ
L
φ
1L2 17 40 50 100 pF
φ
2L1 6 40 50 100 pF
φ
R
φ
R1 5 8 10 15 pF
φ
R2 18 8 10 15 pF
φ
TG
φ
TG 12 100 150 200 pF
µ
PD3739
7
8

TIMING CHART 1 (Out of phase operation)

φ
TG
11
φ
21
φ
2L1
φ
R1
φ
1
3
5
7
9
OUT
1
V
12
φ
22
φ
1L2
φ
11
27
29
31
33
35
5029
5031
5033
5035
5037
φ
R2
OUT
2
V
Note Input the
Note
2
4
6
8
10
12
Optical black
(22 pixels)
φ
R1 and φR2 pulses continuously during this period, too.
28
30
Invalid photocell
(2 pixels)
32
34
36
Valid photocell
(5000 pixels)
5030
5032
Invalid photocell
(2 pixels)
5034
5036
5038
µ
PD3739
Loading...
+ 16 hidden pages