Photo response non-uniformity
Dark signal non-uniformityAbsolute valueMinus and plus value
Random noiseStandard deviation of signalUndefined
Ix⋅s)
Note
MIN.7.24.15
TYP.9.05.2
MAX.10.86.25
MIN.250400
TYP.350500
MAX.500800
MAX.600500
timing is addedoperation only
Absolute valueMinus and plus value
level distribution by scan
µ
PD3739
1000 ± 20 %Unspecified
0.170.29
0.31.0
400Unspecified
µ
PD35H71A
Note Due to the changing of measurement conditions, and pin capacitance of each devices is almost the same.
(µPD3739: Power supply = 12 V, µPD35H71A: Power supply = 0 V)
2
BLOCK DIAGRAM
GND1L2
1
V
OUT
2
20
Automatic R level adjuster
OUT
1
V
3
V
OD
19
φ
φφφφ
R2
1817
CCD analog shift register
Transfer gate
5
R1
φφ
6
2L1
D9
. . . . . .
S1
D32
CCD analog shift register
Photocell
S2
Transfer gate
2212
1413
S5000
D33
φφ
10
11
S4999
9
21
D34
φ
12TG
µ
PD3739
3
PIN CONFIGURATION (Top View)
CCD linear image sensor 22-pin ceramic DIP (CERDIP) (400 mil)
µ
PD3739
Ground
No connection
Output signal 1
No connection
Reset gate clock 1
Last stage shift register clock 2
No connection
No connection
Shift register clock 2
Shift register clock 1
No connection
GND
122
221
NC
V
320
OUT
1
419
NC
φ
R1
518
617
φ
2L1
716
NC
815
NC
φ
21
914
φ
11
1013
1112
NC
NC
NC
V
OUT
2
V
OD
φ
R2
φ
1L2
NC
NC
φ
22
φ
12
φ
TG
No connection
No connection
Output signal 2
Output drain voltage
Reset gate clock 2
Last stage shift register clock 1
No connection
No connection
Shift register clock 2
Shift register clock 1
Transfer gate clock
PHOTOCELL STRUCTURE DIAGRAM
5 m
µ
Aluminum
shield
µ
7 m
2 m
µ
Channel stopper
4
µ
PD3739
ABSOLUTE MAXIMUM RATINGS (TA = +25 ˚C)
ParameterSymbolRatings Unit
Output drain voltageVOD–0.3 to +15V
Shift register clock voltageV
Reset gate clock voltageV
Transfer gate clock voltageV
φ
1, Vφ2–0.3 to +15V
φ
R1, VφR2–0.3 to +15V
φ
TG–0.3 to +15V
Operating ambient temperatureTA–25 to +55˚C
Storage temperatureTstg–40 to +100˚C
Caution Exposure to ABSOLUTE MAXIMUM RATINGS for extended periods may affect device reliability;
exceeding the ratings could cause permanent damage. The parameters apply independently.
RECOMMENDED OPERATING CONDITIONS (TA = –25 to +55 ˚C)
ParameterSymbolConditionsMIN.TYP.MAX.Unit
Output drain voltageVOD11.412.012.6V
Shift register clock high levelV
Shift register clock low levelV
Reset gate clock high level
Reset gate clock low levelV
Capacitance of reset gate clock pin external capacitor
Transfer gate clock high levelV
Transfer gate clock low levelV
Data rate2f
φ
1H, Vφ2H4.55.05.5V
φ
1L, Vφ2L–0.30+0.5V
V
φ
R1H, V
φ
R2H
Note4.55.05.5V
φ
R1L, VφR2L Note–0.30+0.5V
CEXT
φ
RNon-polar type80010001200pF
φ
TGH4.55.05.5V
φ
TGL–0.30+0.5V
φ
R1, 2fφR20.5240MHz
Note Input the reset gate clocks 1 and 2 (φR1, φR2) to pins 5 and 18, respectively, via an input resistor and a capacitor.
Use of a capacitor is indispensable. Refer to APPLICATION CIRCUIT EXAMPLE for the connection method.
The reset gate clock high level and low level at the IC pins (after passing through the external capacitor) varies
φ
according to the IC, due to the on-chip automatic
R level adjuster. The recommended operating conditions
of reset gate clocks 1, 2 (φR1, φR2) in the table above are for signals applied to the external capacitor.
φ
Remark
1 in the above tables represents φ11, φ12 and φ1L2. φ2 represents φ21, φ22 and φ2L1.
5
µ
ELECTRICAL CHARACTERISTICS
TA = +25 ˚C, VOD = 12 V, f
light source: 3200 K halogen lamp + C-500S (infrared cut filter, t = 1 mm), input signal clock = 5 V
ParameterSymbolTest ConditionsMIN.TYP.MAX.Unit
Saturation voltageVsat1.01.5V
Saturation exposureSEDaylight color fluorescent lamp0.17lx•s
Photo response non-uniformityPRNUVOUT = 500 mV410%
Average dark signalADSLight shielding0.33.0mV
Dark signal non-uniformityDSNULight shielding04.06.0mV
Power consumptionPW200400mW
Output impedanceZO0.20.5kΩ
ResponseRFDaylight color fluorescent lamp7.29.010.8V/Ix·s
Response peak wavelength550nm
Image lagILVOUT = 1 V0.31.0%
Offset level
Output fall delay time
Register imbalanceRIVOUT = 500 mV04.0%
Total transfer efficiencyTTEVOUT = 500 mV, data rate = 40 MHz9298%
Dynamic rangeDR1Vsat/DSNU375times
Reset feed-through noise
Random noiseσLight shielding—0.7—mV
Note 1
Note 2
φ
1 = 1 MHz, data rate = 2 MHz, storage time = 10 ms
VOS2.03.55.0V
tdVOUT = 1 V20ns
DR2Vsat/σ2143times
Note 1
RFTNLight shielding0400600mV
p-p
PD3739
Notes 1. Refer to TIMING CHART 2, 5.
2. Typical value when the respective fall times of φ1L2 and φ2L1 are t11’, t41’ and t2’, t32’ (refer to TIMING
CHART 2, 5). Note that VOUT1 and VOUT2 are the outputs of the two steps of emitter-follower shown in
APPLICATION CIRCUIT EXAMPLE.
6
INPUT PIN CAPACITANCE (TA = +25 °C, VOD = 12 V)
ParameterSymbolPin namePin No.MIN.TYP.MAX.Unit
Shift register clock pin capacitance 1C
Shift register clock pin capacitance 2C
Last stage shift register clock pin capacitanceC
Reset gate clock pin capacitanceC
Transfer gate clock pin capacitanceC
φ
1
φ
1110250350500pF
φ
1213250350500pF
φ
2
φ
219250350500pF
φ
2214250350500pF
φ
L
φ
1L2174050100pF
φ
2L164050100pF
φ
R
φ
R1581015pF
φ
R21881015pF
φ
TG
φ
TG12100150200pF
µ
PD3739
7
8
TIMING CHART 1 (Out of phase operation)
φ
TG
11
φ
21
φ
2L1
φ
R1
φ
1
3
5
7
9
OUT
1
V
12
φ
22
φ
1L2
φ
11
27
29
31
33
35
5029
5031
5033
5035
5037
φ
R2
OUT
2
V
Note Input the
Note
2
4
6
8
10
12
Optical black
(22 pixels)
φ
R1 and φR2 pulses continuously during this period, too.
28
30
Invalid photocell
(2 pixels)
32
34
36
Valid photocell
(5000 pixels)
5030
5032
Invalid photocell
(2 pixels)
5034
5036
5038
µ
PD3739
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