NEC UPD16837GS Datasheet

DATA SHEET

MOS INTEGRATED CIRCUIT

µ

PD16837

MONOLITHIC QUAD H BRIDGE DRIVER

DESCRIPTION

The µPD16837 is a monolithic quad H bridge driver employing power MOS FETs in the output stage. The MOS FETs in the output stage lower the saturation voltage and power consumption as compared with conventional drivers using bipolar transistors.

In addition, a low-voltage malfunction prevention circuit is also provided that prevents the IC from malfunctioning when the supply voltage drops. A 30-pin plastic shrink SOP package is adopted to help create compact and slim application sets.

In the output stage H bridge circuits, two low-ON resistance H bridge circuits for driving actuators, and another two channels for driving sled motors and loading motors are provided, making the product ideal for applications in CD-ROM and DVD.

FEATURES

• Four H bridge circuits employing power MOS FETs

• High-speed PWM drive: Operating frequency: 120 kHz MAX.

• Low-voltage malfunction prevention circuit: Operating voltage: 2.5 V (TYP.)

• 30-pin shrink SOP (300 mil)

ORDERING INFORMATION

Part Number Package

µ

PD16837GS 30-pin plastic SSOP (300 mil)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Parameter Symbol Conditions Rating Unit Control block supply voltage VDD –0.5 to +7.0 V Output block supply voltage VM –0.5 to +15 V Input voltage VIN –0.5 to VDD + 0.5 V

Note 2

Note 1

IDR (pulse) PW ≤ 5 ms, Duty ≤ 30 % ±1.0 A/phase

PT 1.25 W

H bridge drive current Power dissipation Operating temperature range TA 0 to 75 °C Peak junction temperature TCH (MAX) 150 °C Storage temperature range Tstg –55 to +150 °C

Notes 1. When only one channel operates.

2. When mounted on a glass epoxy board (100 mm × 100 mm × 1 mm)

The information in this document is subject to change without notice.

Document No. S12764EJ1V0DS00 (1st edition) Date Published January 1998 N CP(K) Printed in Japan

©

1998

µ

PD16837

RECOMMENDED OPERATING RANGE

Parameter Symbol MIN. TYP. MAX. Unit Control block supply voltage VDD Output block supply voltage VM 10.8 12.0 13.2 V H bridge drive current IDR (pulse) Operating frequency fO 120 kHz Operating temperature range TA 075°C Peak junction temperature TCH (MAX) 125 °C

Note 1

Note 2

4.0 5.0 6.0 V

–600 600 mA

Notes 1. The low-voltage malfunction prevention circuit operates when VDD is 1.5 V or higher but less than 4 V

(2.5 V TYP.).

2. PW ≤ 5 ms, Duty ≤ 10%

ELECTRICAL CHARACTERISTICS (T

A = 25 °C and the other parameters are within their recommended operating ranges as described above

T

A = 25 °C)

unless otherwise specified. The parameters other than changes in delay time are when the current is ON.

The low-voltage malfunction prevention circuit operates when V

Parameter Symbol Conditions MIN. TYP. MAX. Unit VM pin current (leakage current) IM VM = 13.2 V 50 VDD pin current IDD VDD = 6 V 200 High-level input current IIH VIN = VDD 0.25 mA Low-level input current IIL VIN = 0 –2.0

Note 2

Note 1

VIH VDD = 5 V, VM = 12 V 3.0

VIL VDD = 5 V, VM = 12 V –0.3 0.8 V RONa VDD = 5 V, VM = 12 V 3.0 4.0 Ω RONb VDD = 5 V, VM = 12 V 1.5 2.0 Ω

VM = 12 V at 100 kHz

High-level input voltage Low-level input voltage H bridge ON resistance (chs 2 and 3) H bridge ON resistance (chs 1 and 4) H bridge switching current without Isa (AVE) VDD = 5 V 3.0 mA

load (chs 2 and 3) H bridge switching current without Isb (AVE)

load (chs 1 and 4)

DD is 1.5 V to 4 V.

VDD + 0.3

4.5 mA

µ µ

µ

V

ch2, ch3 2A, 3A, 2B, 3B Output

Parameter Symbol Conditions MIN. TYP. MAX. Unit Rise time tTLHa VDD = 5 V 200 ns Rising delay time tPLHa VM = 12 V 350 ns Change in rising delay time Fall time tTHLa at 100 kHz 200 ns Falling delay time tPHLa 350 ns Change in falling delay time

∆

tPLHa 20 Ω 110 ns

∆

tPHLa 130 ns

A A

A

ch2, ch3 2A-2B, 3A-3B

Parameter Symbol Conditions MIN. TYP. MAX. Unit Rising delay time differential tPLHa (A-B) VDD = 5 V, VM = 12 V 50 ns Falling delay time differential tPHLa (A-B) 20 Ω at 100kHz 50 ns

Notes 1. The input pins are the IN and SEL pins.

2. Average value of the current consumed internally by an H bridge circuit when the circuit is switched without

2

load.

µ

PD16837

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

A = 25 °C and the other parameters are within their recommended operating ranges as described above

T unless otherwise specified. The parameters other than changes in delay time are when the current is ON.

ch1, ch4 1A, 4A, 1B, 4B Output

Parameter Symbol Conditions MIN. TYP. MAX. Unit Rise time tTLHb VDD = 5 V 200 ns Rising delay time tPLHb VM = 12 V 350 ns Change in rising delay time

∆

tPLHb 10 Ω 110 ns Fall time tTHLb at 100 kHz 200 ns Falling delay time tPHLb 350 ns Change in falling delay time

∆

tPHLb 130 ns

ch1, ch4 1A-1B, 4A-4B

Parameter Symbol Conditions MIN. TYP. MAX. Unit Rising delay time differential tPLHa (A-B) VDD = 5 V, VM = 12 V 50 ns Falling delay time differential tPHLa (A-B) 10 Ω at 100 kHz 50 ns

PIN CONFIGURATION

Output block ch 1

Output block ch 2

IN IN

SEL

DGND

1A

PGND1

1B

V

2A

PGND2

2B

V

IN IN

SEL

1

2

3

1

4 5 6 7 8

M1

9 10 11 12

M2

13

3

14

4

15

2

30 29 28 27 26 25 24 23 22 21 20 19 18 17 16

SEL4 IN

8

IN

7

V

M4

4B PGND4 4A V

M3

3B PGND3 3A V

DD

SEL

3

IN

6

IN

5

Output block ch 4

Output block ch 3

3

TYPICAL CHARACTERISTICS

µ

PD16837

PT vs. TA Characteristics

2

(W)

T

1.25 W

1

100 °C/W

Total poser dissipation P

0

0 25 50 75 100 125 150

Ambient temperature T

IH, VIL, vs. VDD Characteristics

V

A (°C)

3

VM = 12 V T

A

= 25 °C

(V)

IL

, V

IH

2

V

IH

V

IL

DD

vs. VDD Characteristics

I

100

80

µ

( A)

DD

60

40

Supply current I

20

0

345

Supply voltage V

ON vs. VM Characteristics

R

(Ω)

3

ON

2

V

M

= 12 V

T

A

= 25 °C

67

DD (V)

VDD = 5 V T

A

= 25 °C

R

ONa

Input voltage V

1

Supply voltage V

DD (V)

ISa, ISb vs. VDD Characteristics

2

(mA)

Sb

, I

Sa

I

VDD = 5 V T

A

= 25 °C

Sb

1

I

Sa

0

Switching current without load I

34567

Supply voltage V

DD (V)

R

ONb

H bridge ON resistance R

1

10 11 12 13 1434567

Motor voltage V

M (V)

IIH vs. TA Characteristics

0.2 VIN = V

(mA)

IH

0.1

High-level input current I

0

0 204060

Ambient temperature T

A (°C)

DD

4

µ

VDD = 5 V V

M = 12 V

VDD = 5 V V

M = 12 V

100 kHz

VDD = 5 V, V

M = 12 V

100 kHz, 10 Ω

VDD = 5 V, V

M = 12 V

100 kHz, 20 Ω

VDD = 5 V V

M = 12 V

I

DD

vs. TA Characteristics

Ambient temperature T

A

(°C)

µ

VDD pin current I

DD

( A)

0 204060

100

80

60

40

20

0

I

Sa

, ISb vs. TA Characteristics

Ambient temperature T

A

(°C)

Switching current without load I

Sa

, I

Sb

(mA)

0 204060

1

0.8

0.6

0.4

0.2

0

R

ON

vs. TA Characteristics

Ambient temperature T

A

(°C)

H bridge ON resistance R

ON

(Ω)

0 204060

4

3

2

1

0

V

IH

, VIL vs. TA Characteristics

Ambient temperature T

A

(°C)

Input voltage V

IH

, V

IL

(V)

02040

V

IH

VIL

60

2

1.95

1.9

1.85

1.8

ISb

ISa

RONa

RONb

VDD = 6 V

t

TLH

, t

THL

vs. TA Characteristics (chs 1 and 4)

Ambient temperature T

A

(°C)

Rise time/fall time t

TLH

, t

THL

(ns)

0 204060

100

90

80

70

60

50

tTHL

tTLH

tTHL

t

TLH

, t

THL

vs. TA Characteristics (chs 2 and 3)

Ambient temperature T

A

(°C)

Rise time/fall time t

TLH

, t

THL

(ns)

0 204060

100

90

80

70

60

50

PD16837

5