NEC uPC8211TK-E2 Schematic [ru]

DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUIT

µ

PC8211TK

SiGe LOW NOISE AMPLIFIER

FOR GPS/MOBILE COMMUNICATIONS

DESCRIPTION

The µPC8211TK is a silicon germanium (SiGe) monolithic integrated circuit designed as low noise amplifier for

GPS and mobile communications.

The package is 6-pin lead-less minimold, suitable for surface mount.

This IC is manufactured using our 50 GHz f

FEATURES

• Low noise : NF = 1.3 dB TYP.

• High gain : GP = 18.5 dB TYP.

• Low current consumption : I

• Built-in power-save function

• High-density surface mounting : 6-pin lead-less minimold package

CC = 3.5 mA TYP. @ VCC = 3.0 V

APPLICATION

• Low noise amplifier for GPS and mobile communications

ORDERING INFORMATION

Part Number Order Number Package Marking Supplying Form

max UHS2 (Ultra High Speed Process) SiGe bipolar process.

µ

PC8211TK-E2 µPC8211TK-E2-A 6-pin lead-less minimold

(1511 PKG) (PB-Free)

Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact

your nearby sales office.

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order:

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

µ

PC8211TK

Note

6G • Embossed tape 8 mm wide

• Pin 1, 6 face the perforation side of the tape

• Qty 5 kpcs/reel

The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.

Document No. PU10426EJ02V0DS (2nd edition)
Date Published November 2004 CP(K)
Printed in Japan

The mark  shows major revised points.



NEC Compound Semiconductor Devices, Ltd. 2003, 2004

PIN CONNECTIONS

(Top View)

1

2

3

6G

INTERNAL BLOCK DIAGRAM

INPUT

µ

PC8211TK

(Bottom View)

6

5

4

1

6

5

4

1

2

3

V

CC

6

Pin No. Pin Name

1 INPUT

2 GND

3 PS

4 OUTPUT

5 GND

6 V

CC

GND

PS

GND

2

Bias

3

5

4

OUTPUT

2

Data Sheet PU10426EJ02V0DS

µ

PC8211TK

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Test Conditions Ratings Unit

Supply Voltage VCC TA = +25°C 4.0 V

Power Dissipation of Package PD TA = +85°C Note 232 mW

Operating Ambient Temperature TA −40 to +85 °C

Storage Temperature Tstg −55 to +150 °C

Input Power Pin +10 dBm

Note Mounted on double-side copper-clad 50 × 50 × 1.6 mm epoxy glass PWB

RECOMMENDED OPERATING RANGE

Parameter Symbol MIN. TYP. MAX. Unit

Supply Voltage VCC 2.7 3.0 3.3 V

Operating Ambient Temperature TA −25 +25 +85 °C

Operating Frequency Range fin

1 575

−

−

MHz

ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 3.0 V, fin = 1 575 MHz, VPS = 3.0 V, unless
otherwise specified)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

Circuit Current ICC No Signal 2.5 3.5 4.5 mA

At Power-Saving Mode (VPS ≤ 0.8 V)

Power Gain GP 15.5 18.5 21.5 dB

Noise Figure NF

Input 3rd Order Distortion Intercept

Point

Input Return Loss RLin

Output Return Loss RLout

Isolation ISL

Rising Voltage From Power-Saving

Mode

Falling Voltage From Power-Saving

Mode

Gain Flatness Flat fin ± 2.5 MHz

Gain 1 dB Compression Output

Power

Output Power PO Pin = −10 dBm −1.5 +2.0

IIP3 Gain = 18.5 dB

VPSon 2.2

VPSoff

PO (1 dB)

− −

−

−

−

−

−

− −

− −

−

1.3 1.5 dB

−12

7.5 6.0 dB

14.5 10.0 dB

32.5

−4

− −

1

µ

A

−

−

0.8 V

∆

0.5 dB

−

−

dBm

dB

V

dBm

dBm

Data Sheet PU10426EJ02V0DS

3

OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY
(T

A = +25°C, VCC = 3.0 V, fin = 1 575 MHz, VPS = 3.0 V, unless otherwise specified)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

µ

PC8211TK

Power Gain GP Note

Noise Figure NF Note

Input Return Loss RLin Note

Output Return Loss RLout Note

−

−

−

−

18.5

1.15

6.5

14.5

−

−

−

−

Note L1 at test circuit is used wire wound chip inductor by Murata, LQW15A.

TEST CIRCUIT

IN

High : ON
Low : OFF (Power-Save)

C3

33 pF

C2

L1

4.7 nH

61

1.3 pF

2

PS

V

3

C1

0.1 F

µ

L2

5

22 nH

4

C4

µ

0.1 F

R1

750 Ω

8.2 nH

L3

V

CC

C5

82 pF

OUT

COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS

Symbol Form Rating Part Number Maker

dB

dB

dB

dB

C1, C4 Chip Capacitor 0.1

C2 Chip Capacitor 1.3 pF GRM36 Murata

C3 Chip Capacitor 33 pF GRM36 Murata

C5 Chip Capacitor 82 pF GRM36 Murata

R1 Resistor 750 Ω RR0816 Susumu

L1 Inductor 4.7 nH TFL0510 Susumu

L2 Inductor 22 nH TFL0816 or TFL0510 Susumu

L3 Inductor 8.2 nH TFL0510 Susumu

µ

F GRM36 Murata

4

Data Sheet PU10426EJ02V0DS