NEC uPC8211TK-E2 Schematic [ru]

DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUIT

µ

PC8211TK

SiGe LOW NOISE AMPLIFIER

FOR GPS/MOBILE COMMUNICATIONS

DESCRIPTION

The µPC8211TK is a silicon germanium (SiGe) monolithic integrated circuit designed as low noise amplifier for

GPS and mobile communications.

The package is 6-pin lead-less minimold, suitable for surface mount.

This IC is manufactured using our 50 GHz f

FEATURES

• Low noise : NF = 1.3 dB TYP.

• High gain : GP = 18.5 dB TYP.

• Low current consumption : I

• Built-in power-save function

• High-density surface mounting : 6-pin lead-less minimold package

CC = 3.5 mA TYP. @ VCC = 3.0 V

APPLICATION

• Low noise amplifier for GPS and mobile communications

ORDERING INFORMATION

Part Number Order Number Package Marking Supplying Form

max UHS2 (Ultra High Speed Process) SiGe bipolar process.

µ

PC8211TK-E2 µPC8211TK-E2-A 6-pin lead-less minimold

(1511 PKG) (PB-Free)

Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact

your nearby sales office.

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order:

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

µ

PC8211TK

Note

6G • Embossed tape 8 mm wide

• Pin 1, 6 face the perforation side of the tape

• Qty 5 kpcs/reel

The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.

Document No. PU10426EJ02V0DS (2nd edition)
Date Published November 2004 CP(K)
Printed in Japan

The mark  shows major revised points.



NEC Compound Semiconductor Devices, Ltd. 2003, 2004

PIN CONNECTIONS

(Top View)

1

2

3

6G

INTERNAL BLOCK DIAGRAM

INPUT

µ

PC8211TK

(Bottom View)

6

5

4

1

6

5

4

1

2

3

V

CC

6

Pin No. Pin Name

1 INPUT

2 GND

3 PS

4 OUTPUT

5 GND

6 V

CC

GND

PS

GND

2

Bias

3

5

4

OUTPUT

2

Data Sheet PU10426EJ02V0DS

µ

PC8211TK

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Test Conditions Ratings Unit

Supply Voltage VCC TA = +25°C 4.0 V

Power Dissipation of Package PD TA = +85°C Note 232 mW

Operating Ambient Temperature TA −40 to +85 °C

Storage Temperature Tstg −55 to +150 °C

Input Power Pin +10 dBm

Note Mounted on double-side copper-clad 50 × 50 × 1.6 mm epoxy glass PWB

RECOMMENDED OPERATING RANGE

Parameter Symbol MIN. TYP. MAX. Unit

Supply Voltage VCC 2.7 3.0 3.3 V

Operating Ambient Temperature TA −25 +25 +85 °C

Operating Frequency Range fin

1 575

−

−

MHz

ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 3.0 V, fin = 1 575 MHz, VPS = 3.0 V, unless
otherwise specified)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

Circuit Current ICC No Signal 2.5 3.5 4.5 mA

At Power-Saving Mode (VPS ≤ 0.8 V)

Power Gain GP 15.5 18.5 21.5 dB

Noise Figure NF

Input 3rd Order Distortion Intercept

Point

Input Return Loss RLin

Output Return Loss RLout

Isolation ISL

Rising Voltage From Power-Saving

Mode

Falling Voltage From Power-Saving

Mode

Gain Flatness Flat fin ± 2.5 MHz

Gain 1 dB Compression Output

Power

Output Power PO Pin = −10 dBm −1.5 +2.0

IIP3 Gain = 18.5 dB

VPSon 2.2

VPSoff

PO (1 dB)

− −

−

−

−

−

−

− −

− −

−

1.3 1.5 dB

−12

7.5 6.0 dB

14.5 10.0 dB

32.5

−4

− −

1

µ

A

−

−

0.8 V

∆

0.5 dB

−

−

dBm

dB

V

dBm

dBm

Data Sheet PU10426EJ02V0DS

3

OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY
(T

A = +25°C, VCC = 3.0 V, fin = 1 575 MHz, VPS = 3.0 V, unless otherwise specified)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

µ

PC8211TK

Power Gain GP Note

Noise Figure NF Note

Input Return Loss RLin Note

Output Return Loss RLout Note

−

−

−

−

18.5

1.15

6.5

14.5

−

−

−

−

Note L1 at test circuit is used wire wound chip inductor by Murata, LQW15A.

TEST CIRCUIT

IN

High : ON
Low : OFF (Power-Save)

C3

33 pF

C2

L1

4.7 nH

61

1.3 pF

2

PS

V

3

C1

0.1 F

µ

L2

5

22 nH

4

C4

µ

0.1 F

R1

750 Ω

8.2 nH

L3

V

CC

C5

82 pF

OUT

COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS

Symbol Form Rating Part Number Maker

dB

dB

dB

dB

C1, C4 Chip Capacitor 0.1

C2 Chip Capacitor 1.3 pF GRM36 Murata

C3 Chip Capacitor 33 pF GRM36 Murata

C5 Chip Capacitor 82 pF GRM36 Murata

R1 Resistor 750 Ω RR0816 Susumu

L1 Inductor 4.7 nH TFL0510 Susumu

L2 Inductor 22 nH TFL0816 or TFL0510 Susumu

L3 Inductor 8.2 nH TFL0510 Susumu

µ

F GRM36 Murata

4

Data Sheet PU10426EJ02V0DS

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD

V

CC

µ

0.1 F

750 Ω

0.1 F

µ

22 nH

82 pF

8.2 nH

6

5

4

1

2

3

IN

33 pF

4.7 nH

1.3 pF

µ

PC8211TK

OUT

PS

Notes

1. 30 × 30 × 0.51 mm double-side copper-clad hydrocarbon ceramic woven

glass PWB (Rogers: R04003, εr = 3.38).

2. Back side: GND pattern

3. Au plated on pattern

4. represents cutout

5.

: Through holes

Data Sheet PU10426EJ02V0DS

5

TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)

VOLTAGE GAIN vs. FREQUENCY

24

22

TA = –40˚C

NOISE FIGURE vs. FREQUENCY

2.1

1.9

1.7

µ

PC8211TK

VCC = VPS = 3.0 VVCC = VPS = 3.0 V

20

TA = +25˚C

18

Voltage Gain Gain (dB)

16

14

1.5 1.55 1.6

TA = +85˚C

Frequency f (GHz) Frequency f (GHz)

VOLTAGE GAIN vs. POWER-SAVE
PIN APPLIED VOLTAGE

25

15

TA = 85˚C

5

TA = 25˚C

–

5

TA = –25˚C

–

15

Voltage Gain Gain (dB)

–

25

–

35

01234

Power-Save Pin Applied Voltage V

VCC = 3.0 V
f = 1 575 MHz

PS

(V)

1.5

1.3

TA = +25˚C

TA = +85˚C

1.1

Noise Figure NF (dB)

0.9

TA = –40˚C

0.7

0.5

1.5 1.55 1.6

OUTPUT POWER (2 tones), IM
vs. INPUT POWER

30

f1 = 1 575.5 MHz

(dBm)

3

2

= 1 576.5 MHz

f

10

P

–

10

(dBm)

out

–

30

–

50

–

70

–

90

–

50

3rd Order Intermodulation Distortion IM

Output Power (2 tones) P

out

–

40

Input Power

IM

3

VCC = VPS = 3.0 V

A

= 25˚C

T

–

30

–

20

P

in

(dBm)

3

–

10 0

OUTPUT POWER (2 tones), IM3
vs. INPUT POWER

30

f1 = 1 575.5 MHz

(dBm)

3

f

2

= 1 576.5 MHz

10

P

out

–

10

(dBm)

out

–

30

IM

–

50

–

70

–

90

–

50

3rd Order Intermodulation Distortion IM

Output Power (2 tones) P

–

40

Input Power

Remark The graphs indicate nominal characteristics.

6

3

VCC = VPS = 3.0 V

A

= –40˚C

T

–

30

–

20

–

10 0

P

in

(dBm)

Data Sheet PU10426EJ02V0DS

OUTPUT POWER (2 tones), IM3
vs. INPUT POWER

30

f1 = 1 575.5 MHz

(dBm)

3

f

2

= 1 576.5 MHz

10

P

–

10

(dBm)

out

–

30

–

50

–

70

–

90

–

50

3rd Order Intermodulation Distortion IM

Output Power (2 tones) P

out

–

40

Input Power

IM

3

–

30

P

VCC = VPS = 3.0 V

A

= 85˚C

T

–

20

in

(dBm)

–

10 0

S-PARAMETERS (TA = +25°C, VCC = VPS = 3.0 V, monitored at connector on board)

S11-FREQUENCY S22-FREQUENCY

1

1

µ

PC8211TK

1; 57.094 Ω 51.530 Ω 5.2072 nH

START 100.000 000 MHz STOP 2 000.000 000 MHz START 100.000 000 MHz STOP 2 000.000 000 MHz

INPUT RETURN LOSS vs. FREQUENCY

0

–2

(dB)

in

–4

–6

–8

Input Return Loss RL

–10

–12

0.1

1.575 GHz

1.0

Frequency f (GHz)

POWER GAIN vs. FREQUENCY

25

20

15

10

Power Gain Gain (dB)

5

0

0.1

1.575 GHz

1.0

Frequency f (GHz)

1.575 000 000 GHz

10

10

OUTPUT RETURN LOSS vs. FREQUENCY

0

–5

(dB)

out

–10

–15

–20

Output Return Loss RL

–25

0.1

1.575 GHz

Frequency f (GHz)

ISOLATION vs. FREQUENCY

0

–5

–10

–15

–20

–25

–30

–35

Isolation ISL (dB)

–40

–45

–50

0.1

1.575 GHz

Frequency f (GHz)

1; 31.739 Ω 3.4192 Ω 29.554 pF

1.0

1.0

1.575 000 000 GHz

10

10

Remark The graphs indicate nominal characteristics.

Data Sheet PU10426EJ02V0DS

7

PACKAGE DIMENSIONS

6-PIN LEAD-LESS MINIMOLD (1511 PKG) (UNIT: mm)

(Top View)

0.48±0.050.48±0.05

1.5±0.1

0.16±0.05

(Bottom View)

µ

PC8211TK

Remark ( ) : Reference value

0.55±0.03

1.1±0.1

1.3±0.05

+0.1

0.11

0.9±0.10.2±0.1

–0.05

8

Data Sheet PU10426EJ02V0DS

µ

PC8211TK

NOTES ON CORRECT USE

(1) Observe precautions for handling because of electro-static sensitive devices.

(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).

All the ground terminals must be connected together with wide ground pattern to decrease impedance

difference.

(3) The bypass capacitor should be attached to V

CC line.

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered and mounted under the following recommended conditions. For soldering

methods and conditions other than those recommended below, contact your nearby sales office.

Soldering Method Soldering Conditions Condition Symbol

Infrared Reflow Peak temperature (package surface temperature) : 260°C or below

Time at peak temperature : 10 seconds or less
Time at temperature of 220°C or higher : 60 seconds or less
Preheating time at 120 to 180°C : 120±30 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below

Wave Soldering Peak temperature (molten solder temperature) : 260°C or below

Time at peak temperature : 10 seconds or less
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes : 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below

Partial Heating Peak temperature (terminal temperature) : 350°C or below

Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below

Caution Do not use different soldering methods together (except for partial heating).

IR260

WS260

HS350

Data Sheet PU10426EJ02V0DS

9

µ

PC8211TK

•

The information in this document is current as of November, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

•

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.

•

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.

•

NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.

and also includes its majority-owned subsidiaries.

(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4 - 0110

10

Data Sheet PU10426EJ02V0DS

µ

PC8211TK

For further information, please contact

NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/

E-mail: [e-mail] (sales and general)
[e-mail] (technical)
Sales Division TEL: [phone] FAX: [phone]

NEC Compound Semiconductor Devices Hong Kong Limited

E-mail: [e-mail] (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office

NEC Electronics (Europe) GmbH http://www.ee.nec.de/
TEL: [phone] FAX: [phone]

California Eastern Laboratories, Inc. http://www.cel.com/
TEL: [phone] FAX: [phone]

TEL: [phone]
TEL: [phone]
TEL: [phone]

FAX: [phone]
FAX: [phone]
FAX: [phone]

0406